公开(公告)号：US20240004283A1

公开(公告)日：2024-01-04

申请号：US18227833

申请日：2023-07-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Maxim Aleksandrovich Nasalevich ,  Erik Achilles ABEGG ,  Nirupam BANERJEE ,  Michiel Alexander BLAUW ,  Derk Servatius Gertruda BROUNS ,  Paul JANSSEN ,  Matthias KRUIZINGA ,  Egbert LENDERINK ,  Nicolae MAXIM ,  Andrey NIKIPELOV ,  Arnoud Willem NOTENBOOM ,  Claudia PILIEGO ,  Mária PÉTER ,  Gijsbert RISPENS ,  Nadja SCHUH ,  Marcus Adrianus VAN DE KERKHOF ,  Willem Joan VAN DER ZANDE ,  Pieter-Jan VAN ZWOL ,  Antonius Willem VERBURG ,  Johannes Petrus Martinus Bernardus VERMEULEN ,  David Ferdinand VLES ,  Willem-Pieter VOORTHUIJZEN ,  Aleksandar Nikolov ZDRAVKOV

IPC: G03F1/62 ,  G03F7/00 ,  G03F1/82 ,  G02B5/20 ,  G02B5/28

CPC classification number: G03F1/62 ,  G03F7/70191 ,  G03F7/70983 ,  G03F1/82 ,  G03F7/70916 ,  G03F7/70958 ,  G03F7/70575 ,  G02B5/208 ,  G02B5/283

Abstract: Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.

公开(公告)号：US20240126181A1

公开(公告)日：2024-04-18

申请号：US18511454

申请日：2023-11-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Abraham SLACHTER ,  Stefan HUNSCHE ,  Wim Tjibbo TEL ,  Anton Bernhard VAN OOSTEN ,  Koenraad VAN INGEN SCHENAU ,  Gijsbert RISPENS ,  Brennan PETERSON

IPC: G03F7/00

CPC classification number: G03F7/70633 ,  G03F7/705 ,  G03F7/70558 ,  G03F7/70625

Abstract: A method including obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.

公开(公告)号：US20190339615A1

公开(公告)日：2019-11-07

申请号：US16512558

申请日：2019-07-16

Applicant: ASML Netherlands B.V.

Inventor： Sander Frederik WUISTER ,  Oktay YiLDiRiM ,  Gijsbert RISPENS ,  Alexey Olegovich POLYAKOV

IPC: G03F7/004 ,  G03F7/16 ,  G03F7/039 ,  G03F7/00

Abstract: A resist composition is disclosed which comprises a perovskite material with a structure having a chemical formula selected from ABX3, A2BX4, or ABX4, wherein A is a compound containing an NH3 group, B is a metal and X is a halide constituent. The perovskite material may comprise one or more of the following components: halogen-mixed perovskite material; metal-mixed perovskite material, and organic ligand mixed perovsikte material.

公开(公告)号：US20180004085A1

公开(公告)日：2018-01-04

申请号：US15538191

申请日：2015-12-01

Applicant: ASML Netherlands B.V.

Inventor： Sander Frederik WUISTER ,  Oktay YILDIRIM ,  Gijsbert RISPENS ,  Alexey Olegovich POLYAKOV

IPC: G03F7/004 ,  G03F7/16 ,  G03F7/00 ,  G03F7/30 ,  G03F7/20

CPC classification number: G03F7/0045 ,  G03F7/0002 ,  G03F7/0043 ,  G03F7/0047 ,  G03F7/039 ,  G03F7/16 ,  G03F7/20 ,  G03F7/2004 ,  G03F7/2041 ,  G03F7/30

Abstract: A resist composition is disclosed which comprises a perovskite material with a structure having a chemical formula selected from ABX3, A2BX4, or ABX4, wherein A is a compound containing an NH3 group, B is a metal and X is a halide constituent. The perovskite material may comprise one or more of the following components: halogen-mixed perovskite material; metal-mixed perovskite material, and organic ligand mixed perovsikte material.

公开(公告)号：US20210356874A1

公开(公告)日：2021-11-18

申请号：US17389842

申请日：2021-07-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Abraham SLACHTER ,  Stefan HUNSCHE ,  Wim Tjibbo TEL ,  Anton Bernhard VAN OOSTEN ,  Koenraad VAN INGEN SCHENAU ,  Gijsbert RISPENS ,  Brennan PETERSON

IPC: G03F7/20

Abstract: A method including obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.

公开(公告)号：US20210018850A1

公开(公告)日：2021-01-21

申请号：US16955483

申请日：2018-12-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Abraham SLACHTER ,  Stefan HUNSCHE ,  Wim Tjibbo TEL ,  Anton Bernhard VAN OOSTEN ,  Koenraad VAN INGEN SCHENAU ,  Gijsbert RISPENS ,  Brennan PETERSON

IPC: G03F7/20

Abstract: A method including obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.

公开(公告)号：US20200166845A1

公开(公告)日：2020-05-28

申请号：US16061553

申请日：2016-12-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Christianus Wilhelmus Johannes BERENDSEN ,  Günes NAKIBOGLU ,  Daan Daniel Johannes Antonius VAN SOMMEREN ,  Gijsbert RISPENS ,  Johan Franciscus Maria BECKERS ,  Theodorus Johannes Antonius RENCKENS

IPC: G03F7/20 ,  G03F7/16

Abstract: A method of processing a substrate includes: providing a substrate with a layer of photosensitive material on a surface of the substrate; and removing at least part of the photosensitive material from around an outer edge of the layer of photosensitive material so as to generate an edge, having a radial width, around the layer of photosensitive material remaining on the surface of the substrate, wherein the photosensitive material varies in thickness forming a thickness profile across the radial width and the removing is controlled so as to generate variation in the thickness profile along the length of the edge, and/or wherein the removing is controlled so as to generate a rough edge around the layer of photosensitive material remaining on the surface of the substrate.