公开(公告)号：US20150176979A1

公开(公告)日：2015-06-25

申请号：US14421434

申请日：2013-07-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Simon Gijsbert Josephus Mathijssen ,  Erik Willem Bogaart ,  Patricius Aloysius Jacobus Tinnemans ,  Arie Jeffrey Den Boef

IPC: G01B11/14 ,  G01B9/02 ,  G01B11/27 ,  G03F7/20

CPC classification number: G01B11/14 ,  G01B9/02 ,  G01B11/27 ,  G03F7/70058 ,  G03F7/70625 ,  G03F7/70633 ,  G03F9/7069 ,  G03F9/7088

Abstract: A lithographic apparatus includes an alignment sensor including a self-referencing interferometer for reading the position of an alignment target comprising a periodic structure. An illumination optical system for focusing radiation into a spot on said structure. An asymmetry detection optical system receives a share of positive and negative orders of radiation diffracted by the periodic structure, and forms first and second images of said spot on first and second detectors respectively, wherein said negative order radiation is used to form the first image and said positive order radiation is used to form the second image. A processor for processing together signals from said first and second detectors representing intensities of said positive and negative orders to produce a measurement of asymmetry in the periodic structure. The asymmetry measurement can be used to improve accuracy of the position read by the alignment sensor.

Abstract translation: 光刻设备包括对准传感器，其包括用于读取包括周期性结构的对准目标位置的自参考干涉仪。 一种照明光学系统，用于将辐射聚焦到所述结构上的光斑中。 不对称检测光学系统接收通过周期性结构衍射的辐射的正数和负数的共享，并分别在第一和第二检测器上形成所述光斑的第一和第二图像，其中所述负序辐射用于形成第一图像， 所述正阶辐射用于形成第二图像。 用于处理来自所述第一和第二检测器的信号的处理器，其表示所述正序和负序的强度，以产生周期性结构中的不对称性的测量。 可以使用不对称测量来提高由对准传感器读取的位置的精度。

公开(公告)号：US10908513B2

公开(公告)日：2021-02-02

申请号：US16026507

申请日：2018-07-03

Applicant: ASML Netherlands B.V.

Inventor： Marc Johannes Noot ,  Simon Gijsbert Josephus Mathijssen ,  Kaustuve Bhattacharyya ,  Jinmoo Byun ,  Hyun-Su Kim ,  Won-Jae Jang ,  Timothy Dugan Davis

IPC: G03F7/20

Abstract: Disclosed are a method, computer program and a metrology apparatus for measuring a process effect parameter relating to a manufacturing process for manufacturing integrated circuits on a substrate. The method comprises determining for a structure, a first quality metric value for a quality metric from a plurality of measurement values each relating to a different measurement condition while cancelling or mitigating for the effect of the process effect parameter on the plurality of measurement values and a second quality metric value for the quality metric from at least one measurement value relating to at least one measurement condition without cancelling or mitigating for the effect of the process effect parameter on the at least one measurement value. The process effect parameter value for the process effect parameter can then be calculated from the first quality metric value and the second quality metric value, for example by calculating their difference.

公开(公告)号：US10648919B2

公开(公告)日：2020-05-12

申请号：US15979990

申请日：2018-05-15

Applicant: ASML Netherlands B.V.

Inventor： Stefan Michiel Witte ,  Gijsbert Simon Matthijs Jansen ,  Lars Christian Freisem ,  Kjeld Sijbrand Eduard Eikema ,  Simon Gijsbert Josephus Mathijssen

IPC: G01J3/00 ,  G01N21/88 ,  G03F7/20 ,  G01J9/00 ,  G01J1/42 ,  G01N21/95

Abstract: A metrology apparatus (302) includes a higher harmonic generation (HHG) radiation source for generating (310) EUV radiation. Operation of the HHG source is monitored using a wavefront sensor (420) which comprises an aperture array (424, 702) and an image sensor (426). A grating (706) disperses the radiation passing through each aperture so that the image detector captures positions and intensities of higher diffraction orders for different spectral components and different locations across the beam. In this way, the wavefront sensor can be arranged to measure a wavefront tilt for multiple harmonics at each location in said array. In one embodiment, the apertures are divided into two subsets (A) and (B), the gratings (706) of each subset having a different direction of dispersion. The spectrally resolved wavefront information (430) is used in feedback control (432) to stabilize operation of the HGG source, and/or to improve accuracy of metrology results.

公开(公告)号：US10527959B2

公开(公告)日：2020-01-07

申请号：US16325471

申请日：2017-06-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Simon Reinald Huisman ,  Simon Gijsbert Josephus Mathijssen ,  Sebastianus Adrianus Goorden ,  Duygu Akbulut ,  Alessandro Polo

IPC: G03F7/20 ,  G03F9/00 ,  G02B5/20 ,  G02B5/30

Abstract: An alignment sensor for a lithographic apparatus has an optical system configured to deliver, collect and process radiation selectively in a first waveband (e.g. 500-900 nm) and/or in a second waveband (e.g. 1500-2500 nm). The radiation of the first and second wavebands share a common optical path in at least some portion of the optical system, while the radiation of the first waveband is processed by a first processing sub-system and the radiation of the second waveband is processed by a second processing sub-system. The processing subsystems in one example include self-referencing interferometers. The radiation of the second waveband allows marks to be measured through an opaque layer. Optical coatings and other components of each processing sub-system can be tailored to the respective waveband, without completely duplicating the optical system.

公开(公告)号：US20190155171A1

公开(公告)日：2019-05-23

申请号：US16254896

申请日：2019-01-23

Applicant: ASML Netherlands B.V.

Inventor： Nan LIN ,  Arie Jeffrey Den Boeff ,  Sander Bas Roobol ,  Simon Gijsbert Josephus Mathijssen ,  Niels Geypen

IPC: G03F7/20 ,  G01N21/95 ,  G02F1/355 ,  H01S3/16 ,  G01B11/24 ,  H01S3/00 ,  H01S3/13 ,  G02F1/37

CPC classification number: G03F7/70616 ,  G01B11/24 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/8845 ,  G02F1/3551 ,  G02F1/37 ,  G03F7/70625 ,  G03F7/70633 ,  H01S3/0092 ,  H01S3/1305 ,  H01S3/1625 ,  H01S3/1636

Abstract: Disclosed is a method of performing a measurement in an inspection apparatus; and an associated inspection apparatus and HHG source. The method comprises configuring one or more controllable characteristics of at least one driving laser pulse of a high harmonic generation radiation source to control the output emission spectrum of illumination radiation provided by the high harmonic generation radiation source; and illuminating a target structure with said illuminating radiation. The method may comprise configuring the driving laser pulse so that the output emission spectrum comprises a plurality of discrete harmonic peaks. Alternatively the method may comprise using a plurality of driving laser pulses of different wavelengths such that the output emission spectrum is substantially monochromatic.

公开(公告)号：US10234771B2

公开(公告)日：2019-03-19

申请号：US15487558

申请日：2017-04-14

Applicant: ASML Netherlands B.V.

Inventor： Nan Lin ,  Arie Jeffrey Den Boef ,  Sander Bas Roobol ,  Simon Gijsbert Josephus Mathijssen ,  Niels Geypen

IPC: G03F7/20 ,  G01B11/24 ,  G02F1/355 ,  G02F1/37 ,  H01S3/00 ,  H01S3/13 ,  H01S3/16 ,  G01N21/95

Abstract: Disclosed is a method of performing a measurement in an inspection apparatus, and an associated inspection apparatus and HHG source. The method comprises configuring one or more controllable characteristics of at least one driving laser pulse of a high harmonic generation radiation source to control the output emission spectrum of illumination radiation provided by the high harmonic generation radiation source; and illuminating a target structure with said illuminating radiation. The method may comprise configuring the driving laser pulse so that the output emission spectrum comprises a plurality of discrete harmonic peaks. Alternatively the method may comprise using a plurality of driving laser pulses of different wavelengths such that the output emission spectrum is substantially monochromatic.

公开(公告)号：US20190003981A1

公开(公告)日：2019-01-03

申请号：US16102178

申请日：2018-08-13

Applicant: ASML Netherlands B.V.

Inventor： Peter Danny Van Voorst ,  Nan Lin ,  Sander Bas Roobol ,  Simon Gijsbert Josephus Mathijssen ,  Sietse Thijmen Van Der Post

IPC: G01N21/88 ,  G03F7/20 ,  G01N21/95 ,  G01N21/956 ,  H05G2/00

CPC classification number: G01N21/8806 ,  G01N21/9501 ,  G01N2021/95676 ,  G03F7/70616 ,  G03F7/7065 ,  H05G2/00 ,  H05G2/008

Abstract: Disclosed is an inspection apparatus and associated method for measuring a target structure on a substrate. The inspection apparatus comprises an illumination source for generating measurement radiation; an optical arrangement for focusing the measurement radiation onto said target structure; and a compensatory optical device. The compensatory optical device may comprise an SLM operable to spatially modulate the wavefront of the measurement radiation so as to compensate for a non-uniform manufacturing defect in said optical arrangement. In alternative embodiments, the compensatory optical device may be located in the beam of measurement radiation, or in the beam of pump radiation used to generate high harmonic radiation in a HHG source. Where located in the beam of pump radiation, the compensatory optical device may be used to correct pointing errors, or impart a desired profile or varying illumination pattern in a beam of the measurement radiation.

公开(公告)号：US10133192B2

公开(公告)日：2018-11-20

申请号：US15494056

申请日：2017-04-21

Applicant: ASML Netherlands B.V.

Inventor： Patricius Aloysius Jacobus Tinnemans ,  Simon Gijsbert Josephus Mathijssen ,  Sander Bas Roobol ,  Nan Lin

IPC: G03F7/20 ,  G03F9/00 ,  G01N21/47 ,  G01N21/88 ,  G01N21/95 ,  G01N21/956 ,  H01L21/66

Abstract: A structure of interest (T) is irradiated with radiation for example in the x-ray or EUV waveband, and scattered radiation is detected by a detector (19, 274, 908, 1012). A processor (PU) calculates a property such as linewidth (CD) or overlay (OV), for example by simulating (S16) interaction of radiation with a structure and comparing (S17) the simulated interaction with the detected radiation. The method is modified (S14a, S15a, S19a) to take account of changes in the structure which are caused by the inspection radiation. These changes may be for example shrinkage of the material, or changes in its optical characteristics. The changes may be caused by inspection radiation in the current observation or in a previous observation.

公开(公告)号：US10101675B2

公开(公告)日：2018-10-16

申请号：US15444765

申请日：2017-02-28

Applicant: ASML Netherlands B.V.

Inventor： Alessandro Polo ,  Simon Gijsbert Josephus Mathijssen

IPC: G03F9/00 ,  G03F7/20 ,  G01B11/27 ,  G01B11/30 ,  G01B11/00 ,  G01B11/02 ,  G01N21/95

Abstract: Disclosed is a metrology apparatus and method for measuring a structure formed on a substrate by a lithographic process. The metrology apparatus comprises an illumination system operable to provide measurement radiation comprising a plurality of wavelengths; and a hyperspectral imager operable to obtain a hyperspectral representation of a measurement scene comprising the structure, or a part thereof, from scattered measurement radiation subsequent to the measurement radiation being scattered by the structure.

公开(公告)号：US10048596B2

公开(公告)日：2018-08-14

申请号：US15585072

申请日：2017-05-02

Applicant: ASML Netherlands B.V.

Inventor： Nan Lin ,  Sander Bas Roobol ,  Simon Gijsbert Josephus Mathijssen

IPC: G03F7/20 ,  G02F1/35 ,  G21K5/04 ,  H05G2/00

Abstract: An method for generating illuminating radiation in an illumination apparatus for use in an inspection apparatus for use in lithographic processes is described. A driving radiation beam is provided that comprises a plurality of radiation pulses. The beam is split into first and second pluralities of driving radiation pulses. Each plurality of driving radiation pulses has a controllable characteristic. The first and second pluralities may be used to generate an illuminating radiation beam with an output wavelength spectrum. The first and second controllable characteristics are controlled so as to control first and second portions respectively of the output wavelength spectrum of the illuminating radiation beam.