公开(公告)号：JPH03120387A

公开(公告)日：1991-05-22

申请号：JP25707989

申请日：1989-10-03

Applicant: CANON KK

Inventor： IIZUKA TAKASHI ,  FUKUDA YOSHIAKI ,  HAYASHIDA MASAMI ,  NIIBE MASATO

IPC: B08B7/00 ,  C23F4/00 ,  G02B27/00 ,  G03F7/20 ,  H05H13/04

Abstract: PURPOSE:To simply remove contaminant on an optical element for radiated light by a photochemical reaction by putting the element in an evacuated chamber, feeding a reactive gas into the chamber and irradiating the element with light having desired wavelength. CONSTITUTION:An oblique incidence mirror 7 with stuck contaminant to be removed is put in an evacuated chamber 6, a valve 3 for protection, a transmissive filter 4 and a valve 9 on the device side are closed and gaseous oxygen is introduced into the chamber 6 from a gas inlet 5 and regulated to a prescribed pressure through an exhaust port 8. The valve 3 is then opened, light radiated from an electron accumulating ring 1 is led to the filter 4 through a beam line 2 and the surface of the mirror 7 is irradiated with light passing through the filter 4. The contaminant stuck on the mirror 7 is removed without damaging the mirror 7.

公开(公告)号：JPH01304400A

公开(公告)日：1989-12-07

申请号：JP13458588

申请日：1988-05-31

Applicant: CANON KK

Inventor： HAYASHIDA MASAMI ,  FUKUDA YOSHIAKI

IPC: G21K1/06 ,  G02B5/08

Abstract: PURPOSE:To produce the reflecting mirror having high reflectivity to X-rays and vacuum UV rays by setting the rate of forming multilayered film at about from 0.1Angstrom /S to 5Angstrom /S. CONSTITUTION:A silicon substrate (2''phi, 10mmt) worked to surface accuracy lambda/20 (lambda=6,328Angstrom ) is polished by diamond paste. The material 1 of the same lot as the material 1 with which the surface roughness is measured is then mounted to an ion beam sputtering device which can make evacuation to 8X10 Torr ultimate vacuum degree by using a substrate holder in which 18 deg.C cooling water passes on the rear surface of the substrate 1. The alternate layers of Mo and Si are formed to 41 layers at 0.2Angstrom /S vapor deposition rate under the conditions of 1kV acceleration voltage of an ion beam, 20mA ion current and 2X10 Torr gaseous argon pressure. The layer right above the substrate 1 and the extreme surface layer are formed of the Mo and the respective film thicknesses are specified to 27Angstrom of the Mo and 36Angstrom of the Si to obtain the reflecting mirror. The reflecting mirror having the high reflectivity is produced in this way.

公开(公告)号：JPH0192699A

公开(公告)日：1989-04-11

申请号：JP24969687

申请日：1987-10-05

Applicant: CANON KK

Inventor： HAYASHIDA MASAMI ,  WATANABE YUTAKA ,  OGURA SHIGETARO

IPC: G01N23/00 ,  G02B5/08 ,  G21K1/06

Abstract: PURPOSE:To enhance the reflectivity of a specular surface by specifying the surface roughness values of the boundary face in multi-layered structure and the surface of a reflecting mirror by rms values at the time of observing the section. CONSTITUTION:Layers 2, 4 of a 1st material and layers 3, 5 of a 2nd material which are different in refractive index from each other are alternately laminated on the base plate 1. The surface roughness values of the boundary faces in the mutli-layered structure and the surface of the reflecting mirror are specified to =100Angstrom and

公开(公告)号：JP2003151902A

公开(公告)日：2003-05-23

申请号：JP2002333330

申请日：2002-11-18

Applicant: CANON KK

Inventor： WATANABE YUTAKA ,  HAYASHIDA MASAMI

IPC: G03F7/20 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To achieve an aligner that exposes a wafer to light, using a reflection- type mask and has a practical means of alignment. SOLUTION: The aligner comprises an image-forming optical system for forming the reduced image of the pattern of a reflection-type mask via a plurality of mirrors to the wafer, a mask stage for retaining the reflection-type mask, a wafer stage for retaining the wafer, and a detector for detecting light from a light source for alignment via an alignment mark that is provided in the mask stage, an image-forming optical system, and an alignment mark that is provided in the wafer stage.

公开(公告)号：JP2535038B2

公开(公告)日：1996-09-18

申请号：JP24969787

申请日：1987-10-05

Applicant: CANON KK

Inventor： WATANABE YUTAKA ,  OGURA SHIGETARO ,  HAYASHIDA MASAMI

IPC: G02B5/08 ,  G01N23/00 ,  G02B5/28 ,  G21K1/06

公开(公告)号：JP2535036B2

公开(公告)日：1996-09-18

申请号：JP24969587

申请日：1987-10-05

Applicant: CANON KK

Inventor： WATANABE YUTAKA ,  HAYASHIDA MASAMI ,  OGURA SHIGETARO

IPC: G01N23/00 ,  G02B5/08 ,  G21K1/06

公开(公告)号：JPH07153672A

公开(公告)日：1995-06-16

申请号：JP30150793

申请日：1993-12-01

Applicant: CANON KK

Inventor： KATO HIDEO ,  HAYASHIDA MASAMI

IPC: G03F1/60 ,  G03F7/20 ,  H01L21/027 ,  G03F1/14

Abstract: PURPOSE:To obtain the aligner which reduces a driving part, whose temperature controllability is enhanced and whose illuminating region is fixed by a method wherein a cylindrical reflecting mask is turned by making use of its axis as a shaft and an object to be exposed is moved to a direction nearly at right angles to the shaft of the cylindrical reflecting mask. CONSTITUTION:A cylindrical reflecting mask 101 is formed on a cylindrical support body 103, and the cylindrical support body 103 is connected to a rotation driving system. In addition, in order to prevent a temperature from being raised due to the heat of a substrate, constant-temperature cooling water and a gas substance are constituted so as to be capable of being circulated. Then, pattern light 105 which is reflected on the face of the mask on the cylindrical support body 103 is reduced via reflecting mirrors M1, M2, M3 which constitute a reduction-type projection optical system, and it is projected onto the face of a resist film on a silicon wafer 102. In addition, the silicon wafer 102 is moved to a direction perpendicular to the length of a slit by means of a movement mechanism which is interlocked with the rotation of the cylindrical reflecting mask 101.

公开(公告)号：JPH0720293A

公开(公告)日：1995-01-24

申请号：JP16179193

申请日：1993-06-30

Applicant: CANON KK

Inventor： HAYASHIDA MASAMI ,  WATANABE YUTAKA

IPC: G03F7/20 ,  G21K1/06

Abstract: PURPOSE:To decrease the number of times of X-ray intensity measurement, intensity correction or cleaning of mirror significantly when an X-ray lithography is used by suppressing the fluctuation in the intensity of light reflected on a contamination carbon layer adhering to the surface of a mirror through the use of an oblique incident X-ray mirror previously coated with a carbon layer. CONSTITUTION:An oblique incident X-ray mirror 1 comprises a silicon carbide substrate 2 having convex cylindrical surface coated with a carbon layer 3 of 10nm-1mum thick by CVD, for example.

公开(公告)号：JPH04288814A

公开(公告)日：1992-10-13

申请号：JP7720191

申请日：1991-03-18

Applicant: CANON KK

Inventor： HAYASHIDA MASAMI ,  WATANABE YUTAKA

IPC: G03F1/22 ,  G03F7/20 ,  H01L21/027

Abstract: PURPOSE:To make it possible to perform highly accurate exposure by correcting the intensity of synchrotron radiation which is applied to a mask for X-ray lighography based on the distribution of the film thickness of the mask for X-ray lithography. CONSTITUTION:Synchrotron radiation 11 which is emitted from a light emitting source 10 is expanded into a size large enough for its application to an exposure region with a fixed convex mirror and is applied to an X-ray transmitting film 16 of an X-ray mask 14. The X-ray mask 14 is arranged so that the changing direction of the distribution of the thickness of the X-ray transmitting film 16 agrees with the changing direction of the intensity distribution of the synchrotron radiation 11. A shutter 13 wherein an opening part 19 is formed is moved in the above described changing direction with respect to the exposure region. The moving speed is changed in response to the changes in the intensity of the synchrotron radiation 11 and the thickness of the X-ray transmitting film 16. In this way, the illuminating time for the exposure region with the syncrotron radiation 11 is changed.

公开(公告)号：JPH03115898A

公开(公告)日：1991-05-16

申请号：JP25206489

申请日：1989-09-29

Applicant: CANON KK

Inventor： NIIBE MASATO ,  HAYASHIDA MASAMI ,  IIZUKA TAKASHI ,  WATANABE YUTAKA ,  FUKUDA YOSHIAKI

IPC: G21K1/06

Abstract: PURPOSE:To obtain a high wavelength resolution by constituting two kinds of substances out of chemical elements of light elements having atomic numbers of 3 to 20 and not containing an X-ray absorption end over a prescribed wavelength range or out of compounds of these light elements. CONSTITUTION:The present spectrometric device is formed of two kinds of different substances being laminated alternately on a substrate. Both of these substances of two kinds are constituted of chemical elements of light elements having aromic numbers 3 to 20 and not containing an X-ray absorption end over a prescribed wavelength range or of components of these light elements. As for concrete examples of materials for constituting the spectrometric device, the chemical elements of beryllium, boron, carbon, aluminum, silicon and the like and the compounds of the light elements such as a beryllium oxide, a boron carbide, a boron silicide, etc. can be mentioned. In regard to diffraction in the vicinity of a wavelength 4Angstrom of a multilayer of an Mo/Si 501 layer measured by using an SR light source, a wavelength resolution of DELTAlambda/lambda=1.2X10 is obtained.