公开(公告)号：JP2000021754A

公开(公告)日：2000-01-21

申请号：JP20133498

申请日：1998-06-30

Applicant: CANON KK

Inventor： MATSUMOTO TAKAHIRO ,  MURAKAMI EIICHI ,  SAITO KENJI

IPC: G03F7/20 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To superimpose different patterns of masks on a photosensitive substrate with high accuracy by forming position detection marks on the photosensitive substrate by at least 2 exposures when the same region of the photosensitive substrate is subjected to the multiple exposures of the different patterns. SOLUTION: A first exposure is performed using a cyclic pattern mask (F reticle) including a fine cyclic pattern as a reticle 13 (first mask) and a second exposure is then performed using a regular pattern mask (R reticle) including a circuit pattern such as a gate pattern as a reticle 3 (second mask), in other words, double exposures are performed, to thereby form a fine pattern (circuit pattern) on a wafer 7. At this time, alignment marks 22 on the reticles 3 or/and 13 are exposed to light to be projected on the wafer (photosensitive substrate) 7 to form alignment marks. Next, the wafer is relatively positioned with respect to the mask using the alignment marks formed on the wafer 7.

公开(公告)号：JPH11150063A

公开(公告)日：1999-06-02

申请号：JP33126197

申请日：1997-11-14

Applicant: CANON KK

Inventor： MATSUMOTO TAKAHIRO

IPC: G01B11/00 ,  G03F9/00 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To detect relative positional deviation between a mask and a wafer with high accuracy, by detecting the relative positional deviation between the mask and the wafer in a prescribed direction by detecting a first and a second incident positions of light rays respectively made incident upon a prescribed surface through grating lenses. SOLUTION: Alignment marks 3L and 3R composed of grating lenses 11L and 14L having power only in the X-direction in which a positional deviation between a mask 1 and a wafer 2 is detected are formed on the mask 1. In addition, alignment marks 4L and 4R composed of grating lenses 11R and 14R having power only in the X-direction in which the marks 4L and 4R are to be aligned with the marks 3L and 3R are formed on the wafer 2. The positional deviations between the alignment marks 3L and 4L and the alignment marks 3R and 4R are respectively detected by means of sensors 12L and 12R of first and second optical alignment units.

公开(公告)号：JPH1068604A

公开(公告)日：1998-03-10

申请号：JP24413796

申请日：1996-08-27

Applicant: CANON KK

Inventor： MATSUMOTO TAKAHIRO

IPC: G01B11/00 ,  G03F9/00 ,  H01L21/027 ,  H01L21/66

Abstract: PROBLEM TO BE SOLVED: To enable highly accurate measurement regardless of any change in the step of a diffraction grating by selecting the best interference signal from among a plurality of interference signals different in the cycle of changes in the diffraction efficiency to determine an amount of positional deviation. SOLUTION: Positive primary diffraction light with a frequency f1 from a diffraction grating 7 and negative primary diffraction light with the frequency f2 are polarized by mirrors 27, 25 and 11 to be admitted into a polarization beam splitter PBS12. Then, the direction of polarization is adjusted by a polarizing plate 15 and a beat signal M1 is detected by a sensor 16. On the other hand, the negative primary diffraction light with the frequency f1 and the positive primary diffraction light with the frequency f2 are respectively polarized by mirrors 28, 26 and 13 and admitted into the PBS14 to detect a beat signal M2 by a sensor 18. The beat signals M1 and M2 are compared in the intensity of the signals, S/N, phase stability and the like by a superiority judging means 19 to determine the superiority of the signals and a superiority signal is outputted to a phase difference meter 20. The cycle of changes in the intensity of the diffraction light varies with respect to changes in the step of the diffraction light. Therefore, the cycle of changes in the intensity of the diffraction light of the beat signals M1 and M2 also differs thereby preventing the intensity of both the signals from being minimized.

公开(公告)号：JPH0587527A

公开(公告)日：1993-04-06

申请号：JP24920491

申请日：1991-09-27

Applicant: CANON KK

Inventor： MATSUMOTO TAKAHIRO ,  NOSE TETSUSHI ,  YOSHII MINORU ,  SAITO KENJI ,  CHITOKU KOICHI

IPC: G01B11/00 ,  G01D5/38 ,  G03F9/00 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To enable light scattering to be eliminated and achieve a high accuracy by uisng a mark for measuring two diffraction gratings with a different pitch and using a light with an order of diffraction where a diffraction direction of a diffraction light interference light which is obtained from each diffraction gratings is different. CONSTITUTION:Lights with frequencies fl and f2 which are generated from a Zeman laser 1 are divided by a polarization beam splitter 2. A light with the frequency fl which is reflected and a light with the frequency 2 which is passed through the beam splitter 2 are deflected by a mirror 3 and impinge on a diffraction grating 6 on a mask 5 and a diffraction grating 8 on a wafer 7 at specified angles, respectively. At this time, by using diffraction gratings 6 and 8 with different pitches, diffraction directions of the gratings 6 and 8 are different, thus enabling a diffraction light from each diffraction grating to be separated. +-primary diffraction lights from the grating 6 and secondary and primary diffraction lights interfere each other, thus becoming two optical beam signals. An interference light which is generated when two lights are overlapped is photoelectrically detected by a sensor 11 and a phase difference is measured by a phasedifference meter 12.

公开(公告)号：JP2003151889A

公开(公告)日：2003-05-23

申请号：JP2001351708

申请日：2001-11-16

Applicant: CANON KK

Inventor： INE HIDEKI ,  CHITOKU KOICHI ,  MATSUMOTO TAKAHIRO

IPC: G01B21/00 ,  G01B21/20 ,  G03F7/22 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To propose a system that inexpensively adapts contradictory performance of high speed operation and high throughput, and, in addition, to propose a system that performs an alignment method corresponding to a process error simultaneously with an increased speed in focus offsetting, and impurity inspection at the periphery section of a wafer. SOLUTION: In the alignment method, a wafer is vacuum-chucked by a chuck outside an projection aligner, a mark is arranged on the chuck, the relative relationship of the direction axis of each shot of the wafer to the mark on the chuck is measured, conveyance to the projection aligner is performed for each chuck, and merely the mark on the chuck is measured for exposing in the projection aligner. In alignment measurement, shape measurement is conducted in the presence or absence of a resist, and an alignment error can also be calculated by signal simulation. A focus offset is also measured outside the projection aligner, the information of the measurement is reflected to the projection aligner, and exposure is performed, thus achieving a system having high accuracy and throughput. Impurity inspection is also carried out.

公开(公告)号：JP2001332478A

公开(公告)日：2001-11-30

申请号：JP2000151518

申请日：2000-05-23

Applicant: CANON KK

Inventor： MATSUMOTO TAKAHIRO ,  YAMAMOTO TAKESHI

IPC: G03F9/00 ,  H01L21/027 ,  H01L21/68

Abstract: PROBLEM TO BE SOLVED: To easily align an original even if large pattern position deviation exists on the original. SOLUTION: When the original having an exposure pattern that is carried in the aligner is aligned by observing an alignment mark on the original by an observation means, the alignment mark on the original is observed by the observation means for measuring the position in advance (step 51), and the measured result is stored as data accompanying the original (step 52).

公开(公告)号：JP2001291752A

公开(公告)日：2001-10-19

申请号：JP2000103369

申请日：2000-04-05

Applicant: CANON KK

Inventor： INE HIDEKI ,  CHITOKU KOICHI ,  MATSUMOTO TAKAHIRO

IPC: G01B11/02 ,  G01B11/30 ,  G01N21/94 ,  G01N21/95 ,  G03F7/20 ,  H01L21/027 ,  H01L21/66

Abstract: PROBLEM TO BE SOLVED: To provide a wafer foreign matter inspection method, where a foreign matter which enters between a mask and a wafer and breaks the mask is detected by a PXL aligner and the mask is prevented from being broken, a foreign matter inspection device, and the aligner using that inspection method. SOLUTION: A wafer foreign matter inspection method that a foreign matter inspection device detectable the height of a foreign matter on the peripheral part of a wafer is applied to a PXL aligner, and a foreign matter inspection device and the PXL aligner using that inspection method are used for a detection of the foreign matter and the prevention of a breakage of a mask.

公开(公告)号：JP2000260700A

公开(公告)日：2000-09-22

申请号：JP6200699

申请日：1999-03-09

Applicant: CANON KK

Inventor： CHITOKU KOICHI ,  MATSUMOTO TAKAHIRO ,  INE HIDEKI

IPC: H01L21/027 ,  G03F7/20

Abstract: PROBLEM TO BE SOLVED: To perform exposure transfer at high resolution by providing a first process for exposure transferring an alignment mark on a first object being aligned with a second object to a specified position on the second object, and a second process for exposure transferring a pattern on the first object to the second object. SOLUTION: A reticle R is arranged with alignment marks 1, 2 in x and y directions, and a writing area 3 formed with an IC pattern. When only the alignment marks 1, 2 are exposed onto a wafer W, a blade 4 masks the writing area 3 of the IC pattern. Subsequently, the alignment marks 1, 2 are masked using a blade 5 and on the IC pattern in the writing area 3 is exposed onto a wafer W. In this regard, line width of the alignment marks 1, 2 being exposed onto the wafer W is set equal to or narrower than the minimum line width of the IC pattern.

公开(公告)号：JP2000098632A

公开(公告)日：2000-04-07

申请号：JP28344298

申请日：1998-09-18

Applicant: CANON KK

Inventor： MATSUMOTO TAKAHIRO ,  MURAKAMI EIICHI

IPC: G02B5/18 ,  G03F7/20 ,  G03F9/00

Abstract: PROBLEM TO BE SOLVED: To manufacture a diffraction optical element having high diffraction efficiency with high throughput by performing surely position adjustment and exposing simultaneously a pattern on a substrate. SOLUTION: When a reticle 9 is illuminated by an illumination optical system 8 and a pattern on the reticle 9 is transcribed to a substrate S to which a sensitizer is applied by a projection lens 10, an alignment mark is transcribed simultaneously, an alignment mark on the reticle 9 by a reticle alignment scope 11 and an alignment mark on the substrate S through the projection lens 10 or the reference mark 5 are simultaneously observed and the position adjustment is performed. Also, the alignment of the substrate S is performed by observing the reference mark 5 on a rotary stage 3 and a mark on the substrate S.

公开(公告)号：JP2000021760A

公开(公告)日：2000-01-21

申请号：JP20134198

申请日：1998-06-30

Applicant: CANON KK

Inventor： KAWASHIMA MIYOKO ,  MATSUMOTO TAKAHIRO

IPC: G03F7/20 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To produce a good pattern image by forming a pattern of a mask used for exposure in consideration of the deformation of the pattern on a photosensitive substrate after development. SOLUTION: When multiple exposures of a regular pattern and a cyclic pattern on masks placed on a photosensitive substrate are performed via a projecting optical system, the exposure of the regular pattern is performed using a mask having a pattern including fine lines smaller than the resolving power of a projecting optical system, wherein the pattern on the mask is formed in consideration of the deformation of the pattern on the photosensitive substrate after development. To be specific, the fine lines of the pattern of this mask are formed in consideration of the deformation of the pattern on the photosensitive substrate. Further specifically, when the pattern of this mask has fine lines having a width of 0.5 λ/NA or less, where NA is the number of openings of the projecting optical system and λ is a wavelength of exposed light, the fine lines are formed in consideration of the deformation of the pattern on the photosensitive substrate.