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    31.
    发明专利
    未知

    公开(公告)号：DE69918217T2

    公开(公告)日：2005-07-07

    申请号：DE69918217

    申请日：1999-04-22

    Applicant: CANON KK

    Inventor： OHNISHI TOSHIKAZU ,  MITOME MASANORI

    IPC: H01J9/02

    Abstract: A method for making an electron emission device, which includes a conductive film having an electron emitting section disposed between a pair of electrodes, includes a removal step for removing impurities in an organic substance, and a voltage-applying step for applying an voltage to the conductive film through the electrodes in an atmosphere containing the organic substance. The electron emission device is suitable for an electron beam source in an image forming apparatus.

    ELECTRON EMISSION ELEMENT, ELECTRON SOURCE AND IMAGE FORMING DEVICE USING THIS SOURCE AND THEIR MANUFACTURE
    39.
    发明专利
    ELECTRON EMISSION ELEMENT, ELECTRON SOURCE AND IMAGE FORMING DEVICE USING THIS SOURCE AND THEIR MANUFACTURE 失效

    公开(公告)号：JPH0845417A

    公开(公告)日：1996-02-16

    申请号：JP19458694

    申请日：1994-07-28

    Applicant: CANON KK

    Inventor： MITOME MASANORI ,  OKUDA MASAHIRO

    IPC: H01J9/02 ,  H01J1/30 ,  H01J9/385 ,  H01J31/12 ,  H01J31/15

    Abstract: PURPOSE:To provide a method for the manufacture of an electron emission element used as an electron source for an image forming device or the like, and stably driven over a long period. CONSTITUTION:Regarding the manufacture of a surface conductive electron emission element having a conductive thin film 3 between element electrodes 4 and 5, the element laid in a vacuum device is subjected to a vacuum exhaust process, while ultraviolet is being irradiated. As a result, a residual organic component attracted to an element surface can be removed and discharged without heating the element to high temperature. A danger of generating an element defect can be thus avoided.

    VACUUM GAGE
    40.
    发明专利
    VACUUM GAGE 失效

    公开(公告)号：JPH0829282A

    公开(公告)日：1996-02-02

    申请号：JP18516194

    申请日：1994-07-15

    Applicant: CANON KK

    Inventor： MITOME MASANORI ,  OKUDA MASAHIRO

    IPC: G01L21/00

    Abstract: PURPOSE:To obtain a vacuum gage by which a vacuum from a medium-vacuum region up to a high-vacuum region can be measured without generating ions and without affecting an apparatus in the circumference by a method wherein an uneven thin film is formed between opposite blectrodes and a current which flows in the uneven thin film is measured. CONSTITUTION:As a material for a substrate 1, an insulating material such as, e.g. glass, quartz or the like is used. Electrodes 2, 3 are installed so as to be faced, and they can be formed by a method such as, e.g. a vacuum film- formation process, a photolithographic process or the like. A material for the electrodes 2, 3, a conductive material, e.g. a metal such as Ni, Cr or the like, an alloy, a metal such as Pb, Ag, RuO2 or the like, a printed conductor constituted of a metal oxide and of a glass, a conductor such as InO3-SnO3 or the like, or a semiconductor material such as polysilicon or the like can be enumerated. A material constituting an uneven film 4 is a metal such as Pd, Rn or the like an oxide such as PbO, SnO2 or the like, a boride such as HfB2, ZrB2 or the like, a carbide such as TiC, ZrC or the like or a nitride such as TiN, ZrN or the like, and the film is composed basically of a fine particle film.

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