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公开(公告)号：US20170278813A1
公开(公告)日：2017-09-28
申请号：US15466282
申请日：2017-03-22
Applicant: EBARA CORPORATION
Inventor： Yohei WAKUDA , Yasuyuki MASUDA , Masashi SHIMOYAMA
CPC classification number: H01L24/11 , C25D3/38 , C25D5/02 , C25D5/54 , C25D7/12 , C25D21/10 , H01L24/13 , H01L24/94 , H01L2224/11462 , H01L2224/119 , H01L2224/13147 , H01L2924/00012 , H01L2924/00014
Abstract: A plating method which can achieve a desired dome height is disclosed. The method includes: preparing correlation data showing a relationship between proportion of dome height to bump height and concentration of chloride ions; producing a plating solution containing chloride ions at a concentration which has been selected based on a desired proportion of dome height to bump height and on the correlation data, the selected concentration being in a range of 100 mg/dm3 to 300 mg/dm3; immersing a substrate in the plating solution; and passing an electric current between an anode and the substrate, both immersed in the plating solution, thereby plating the substrate to form bumps.
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公开(公告)号：US20170253987A1
公开(公告)日：2017-09-07
申请号：US15446560
申请日：2017-03-01
Applicant: EBARA CORPORATION
Inventor： Masashi SHIMOYAMA , Takashi KlSHI
CPC classification number: C25D17/001 , B08B7/0057 , C25D5/022 , C25D7/123 , C25D17/00 , C25D17/004 , C25D17/06 , H01L21/02068 , H01L21/67057 , H01L21/67115 , H01L21/6723
Abstract: The present invention improves the hydrophilicity of a substrate surface, and suppresses variation in the degree of hydrophilicity with each substrate. A plating apparatus is provided that performs a plating process on a substrate having a resist pattern. This plating apparatus includes a pretreatment bath that performs hydrophilic treatment by bringing a pretreatment liquid into contact with a surface to be plated of the substrate, and a plating bath that performs a plating process on a substrate that has undergone the hydrophilic treatment. The pretreatment bath includes a pretreatment liquid supplying device that supplies the pretreatment liquid into the pretreatment bath, and an ultraviolet light irradiation device that irradiates ultraviolet light onto the surface to be plated of the substrate.
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公开(公告)号：US20160369422A1
公开(公告)日：2016-12-22
申请号：US15182469
申请日：2016-06-14
Applicant: EBARA CORPORATION
Inventor： Jumpei FUJIKATA , Masashi SHIMOYAMA , Yuji ARAKI , Mizuki NAGAI
CPC classification number: C25D21/12 , C25D5/00 , C25D7/12 , C25D17/001 , C25D17/007 , C25D17/008 , C25D17/06 , C25D17/12
Abstract: There is provided a method of adjusting a plating apparatus and a measuring apparatus that can obtain position adjustment amounts/a position adjustment amount of a substrate holder, an anode holder, a regulation plate, and/or a paddle without carrying out plating treatment. There is provided the method of adjusting the plating apparatus that has a plating bath configured to be able to hold the substrate holder, the anode holder, and an electric field adjusting plate. The method of adjusting the plating apparatus has the steps of: installing a first jig at a position in the plating bath where the substrate holder is installed; installing a second jig at a position in the plating bath where the anode holder or the electric field adjusting plate is installed; measuring a positional relation between the first jig and the second jig installed in the plating bath using a sensor included in either of the first jig and the second jig; and adjusting an installation position of the substrate holder, the anode holder, or the electric field adjusting plate based on the measured positional relation.
Abstract translation: 提供了一种调整电镀装置和测量装置的方法，该电镀装置和测量装置可以在不进行电镀处理的情况下获得基板支架，阳极支架，调节板和/或板的位置调整量/位置调整量。 提供了一种调整电镀设备的方法，该电镀设备具有能够保持衬底保持器，阳极保持器和电场调节板的电镀槽。 调整电镀装置的方法具有以下步骤：将第一夹具安装在安装有基板保持架的电镀槽中的位置处; 在安装有阳极保持器或电场调节板的电镀槽中的位置安装第二夹具; 使用包括在所述第一夹具和所述第二夹具中的任一个中的传感器测量所述第一夹具和安装在所述镀浴中的所述第二夹具之间的位置关系; 并且基于所测量的位置关系来调整衬底保持器，阳极保持器或电场调节板的安装位置。
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公开(公告)号：US20150136609A1
公开(公告)日：2015-05-21
申请号：US14526421
申请日：2014-10-28
Applicant: EBARA CORPORATION
Inventor： Masashi SHIMOYAMA , Masamichi TAMURA , Yuji ARAKI
CPC classification number: C25D21/16 , C25D3/60 , C25D17/001 , C25D17/002 , C25D17/06 , C25D21/12 , C25D21/18
Abstract: An Sn alloy plating apparatus is disclosed which can relatively easily perform control of an Sn alloy plating solution, including control of the Sn ion concentration and the acid concentration of the plating solution. The Sn alloy plating apparatus includes: a plating bath configured to hold therein an Sn alloy plating solution in which an insoluble anode a the substrate are to be disposed opposite each other; a plating-solution circulation line configured to circulate the Sn alloy plating solution in the plating bath; an Sn supply reservoir configured to draw a part of the Sn alloy plating solution from the plating-solution circulation line, perform electrolysis in a presence of the Sn alloy plating solution to replenish the Sn alloy plating solution with Sn ions and an acid that stabilizes Sn ions, and return the Sn alloy plating solution that has been replenished with the Sn ions to the plating bath; and a dialysis unit configured to draw a part of the Sn alloy plating solution from the plating-solution circulation line, remove the acid from the Sn alloy plating solution, and then return the Sn alloy plating solution to the plating bath.
Abstract translation: 公开了一种Sn合金镀覆装置，其可以相对容易地进行Sn合金电镀液的控制，包括控制Sn离子浓度和电镀液的酸浓度。 Sn合金镀覆装置包括：镀浴，其中容纳有相互相对配置基板的不溶性阳极的Sn合金电镀液， 电镀液循环管线，其将所述Sn合金镀液在所述镀浴中循环; 配置为从镀液循环管线中拉出一部分Sn合金电镀液的Sn供给槽，在Sn合金镀液的存在下进行电解，用Sn离子和稳定Sn的酸来补充Sn合金电镀液 离子，并将已经补充有Sn离子的Sn合金镀液返回到电镀槽中; 以及透析单元，其被配置为从所述电镀液循环管线中拉出所述Sn合金镀液的一部分，从所述Sn合金镀液中除去所述酸，然后将所述Sn合金镀液返回到所述镀浴。
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公开(公告)号：US20130306483A1
公开(公告)日：2013-11-21
申请号：US13893940
申请日：2013-05-14
Applicant: EBARA CORPORATION
Inventor： Yuji ARAKI , Masashi SHIMOYAMA
CPC classification number: C25D21/22 , C25D3/30 , C25D3/60 , C25D17/001 , C25D17/008 , C25D21/12 , C25D21/14
Abstract: A plating apparatus plates a substrate with Sn alloy to form an Sn alloy film on a surface of the substrate. The apparatus includes: a plating bath for retaining a plating solution therein, the substrate being immersed in the plating solution in a position opposite to an insoluble anode; a plating solution dialysis line for extracting the plating solution from the plating bath and returning the plating solution to the plating bath; a dialysis cell provided in the plating solution dialysis line and configured to remove a free acid from the plating solution by dialysis using an anion exchange membrane; a free acid concentration analyzer; and a controller for controlling a flow rate of the plating solution flowing through the plating solution dialysis line based on the concentration of the free acid measured by the free acid concentration analyzer.
Abstract translation: 电镀装置用Sn合金对基板进行平板化，在基板的表面形成Sn合金膜。 该装置包括：用于在其中保持电镀液的电镀液，将基板浸入电镀液中与不溶性阳极相反的位置; 电镀液透析线，用于从电镀液中提取电镀溶液并将电镀液返回镀浴; 设置在所述电镀液透析线中的透析池，其构造为通过使用阴离子交换膜透析从所述电镀液中除去游离酸; 游离酸浓度分析仪; 以及控制器，其基于由游离酸浓度分析仪测定的游离酸的浓度来控制流过电镀液透析线的电镀液的流量。
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Patent Agency Ranking
公开(公告)号：US20240301582A1
公开(公告)日：2024-09-12
申请号：US17923563
申请日：2022-02-07
Applicant: EBARA CORPORATION
Inventor： Yohei WAKUDA , Yasuyuki MASUDA , Masashi SHIMOYAMA
CPC classification number: C25D17/008 , C25D17/06 , C25D21/10
Abstract: In a plating apparatus including a shielding member, an ionically resistive element is disposed to be close to a surface to be plated of a substrate to improve uniformity of a distribution of plating film-thickness.
A plating apparatus includes: a plating tank 410 configured to house a plating solution; a substrate holder 440 configured to hold a substrate Wf with a surface to be plated Wf-a facing downward; an anode 430 disposed in the plating tank 410; an ionically resistive element 450 disposed between the substrate Wf and the anode 430 and including an opposed surface 450-a opposed to the surface to be plated Wf-a, the opposed surface 450-a including a first opposed surface 450-a1 and a second opposed surface 450-a2 apart from the surface to be plated Wf-a more than the first opposed surface 450-a1; and a shielding member 481 disposed in a depressed region β of the ionically resistive element 450, the depressed region β being formed by the second opposed surface 450-a2. The shielding member 481 is for shielding an electric field.-
公开(公告)号：US20240218553A1
公开(公告)日：2024-07-04
申请号：US17923080
申请日：2021-06-04
Applicant: EBARA CORPORATION
Inventor： Masashi SHIMOYAMA , Yasuyuki MASUDA , Kazuhito TSUJI , Ryosuke HIWATASHI
CPC classification number: C25D21/12 , C25D5/022 , C25D17/008 , C25D17/06 , C25D21/10
Abstract: An objective of the present invention is to provide a plating apparatus capable of improving uniformity of a plating film formed on a substrate. The plating apparatus includes a plating tank, a substrate holder that holds a substrate, an anode disposed, in the plating tank, facing the substrate held by the substrate holder, and a film thickness measuring module including a sensor that detects a parameter related to a plating film formed on a surface to be plated of the substrate, the film thickness measuring module measuring a film thickness of the plating film based on a detection value of the sensor during a plating treatment.
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公开(公告)号：US20240183059A1
公开(公告)日：2024-06-06
申请号：US17781363
申请日：2021-03-05
Applicant: EBARA CORPORATION
Inventor： Yasuyuki MASUDA , Ryosuke HIWATASHI , Masashi SHIMOYAMA
CPC classification number: C25D21/12 , C25D17/008 , C25D17/08 , C25D21/10
Abstract: There is provided a method of adjusting a plating module, wherein the plating module comprises a substrate holder configured to hold a substrate, an anode placed to be opposed to the substrate holder, and a plate placed between the substrate holder and the anode to serve as an ionically resistive element. The method comprises: providing a plating module of initial setting, which is initially set in such a state that a porosity in an outer circumferential portion of the plate is adjusted to reduce a plating film thickness in an outer circumferential portion of the substrate to be smaller than a film thickness in another portion; and adjusting a distance between the substrate holder and the plate so as to flatten a distribution of plating film thickness of the entire substrate by adjustment of the distance between the substrate holder and the plate such as to increase a film thickness in the outer circumferential portion of the substrate according to a film thickness distribution of the substrate that is plated in the plating module.
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39.发明公开公开(公告)号：US20230383431A1
公开(公告)日：2023-11-30
申请号：US18027588
申请日：2021-03-03
Applicant: EBARA CORPORATION
Inventor： Yasuyuki MASUDA , Ryosuke HIWATASHI , Masashi SHIMOYAMA
IPC: C25D17/06
CPC classification number: C25D17/06
Abstract: There is provided a substrate holder configured to hold a substrate in an apparatus for plating. The substrate holder comprises a seal configured to seal an outer peripheral part of the substrate and provided with a first opening which a surface to be plated or a plating surface of the substrate is exposed on; and a seal ring holder configured to hold the seal and provided with a second opening which the plating surface of the substrate is exposed on, wherein an opening diameter ratio that is a ratio of an opening diameter of the second opening to an opening diameter of the first opening is in a range of not lower than 99.32% and not higher than 99.80%.
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40.发明申请公开(公告)号：US20190368069A1
公开(公告)日：2019-12-05
申请号：US16426079
申请日：2019-05-30
Applicant: EBARA CORPORATION
Inventor： Yasuyuki MASUDA , Masashi SHIMOYAMA
IPC: C25D21/12
Abstract: A plating method for plating a substrate by increasing a current value from a predetermined current value to a first current value is provided. The plating method plates the substrate for a first predetermined period with the first current value when a first current density corresponding to the first current value is lower than a limiting current density. This plating method includes measuring a voltage value applied to the substrate, and when the current value is increased from the predetermined current value to the first current value, determining whether the first current density is equal to or more than the limiting current density or not based on an amount of change in the voltage value.
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