METHOD OF PLATING AND APPARATUS FOR PLATING

    公开(公告)号:US20250075364A1

    公开(公告)日:2025-03-06

    申请号:US17923567

    申请日:2021-10-18

    Abstract: One object of the present disclosure is to provide a technique of suppressing deterioration of a seed layer of a substrate. There is provided a method of plating, comprising: a process of holding a substrate by a substrate holder, such that a sealed space is formed to protect a contact provided to supply electricity to the substrate, from a plating solution while the substrate holder holds the substrate, and that a contact location between the substrate and the contact is locally covered with a liquid in the sealed space; a process of soaking the substrate held by the substrate holder in the plating solution and placing the substrate to be opposed to an anode; and a process of performing a plating process of the substrate with supplying electric current between the substrate and the anode, in a state that the contact location between the substrate and the contact is covered with a liquid.

    METHOD OF ADJUSTING PLATING MODULE

    公开(公告)号:US20250051955A1

    公开(公告)日:2025-02-13

    申请号:US18929090

    申请日:2024-10-28

    Abstract: There is provided a method of adjusting a plating module, wherein the plating module comprises a substrate holder configured to hold a substrate, an anode placed to be opposed to the substrate holder, and a plate placed between the substrate holder and the anode to serve as an ionically resistive element. The method comprises: providing a plating module of initial setting, which is initially set in such a state that a porosity in an outer circumferential portion of the plate is adjusted to reduce a plating film thickness in an outer circumferential portion of the substrate to be smaller than a film thickness in another portion; and adjusting a distance between the substrate holder and the plate so as to flatten a distribution of plating film thickness of the entire substrate by adjustment of the distance between the substrate holder and the plate such as to increase a film thickness in the outer circumferential portion of the substrate according to a film thickness distribution of the substrate that is plated in the plating module.

    PLATING ANALYSIS METHOD, PLATING ANALYSIS SYSTEM, AND COMPUTER READABLE STORAGE MEDIUM FOR PLATING ANALYSIS

    公开(公告)号:US20190137445A1

    公开(公告)日:2019-05-09

    申请号:US16180801

    申请日:2018-11-05

    Abstract: An object of the present invention is to provide a numerical analysis method, by which film-thickness distribution of an electroplated film can be obtained.A method for analyzing plating comprising steps for: performing electrochemical measurement in an electroplating apparatus; deriving electrochemical parameters from result of the electrochemical measurement; specifying plating conditions which are applied when performing a plating process; based on the electrochemical parameters and the plating conditions, determining current density distribution on a surface of a substrate which is an object of the plating process, wherein the current density distribution is represented by a predetermined function formula which comprises a variable which represents a position on the substrate; and based on the current density distribution, calculating thickness of a film plated on the substrate.

    PLATING METHOD AND PLATING APPARATUS
    4.
    发明申请

    公开(公告)号:US20180282892A1

    公开(公告)日:2018-10-04

    申请号:US15937353

    申请日:2018-03-27

    Abstract: A plating method for plating a substrate having resist opening portions is provided. The plating method includes a resist residue removing step of removing resist residues in the resist opening portions of the substrate by spraying first process liquid to a surface of the substrate on which the resist opening portions are formed, a liquid filling step of soaking the substrate passed through the removing step in second process liquid to fill the resist opening portions of the substrate with the second process liquid, and a plating step of plating the substrate passed through the liquid filling step.

    PLATING APPARATUS AND PLATING METHOD
    6.
    发明申请
    PLATING APPARATUS AND PLATING METHOD 审中-公开
    电镀设备和电镀方法

    公开(公告)号:US20160145760A1

    公开(公告)日:2016-05-26

    申请号:US14919002

    申请日:2015-10-21

    CPC classification number: C25D17/008 C25D5/022 C25D17/001 C25D17/06 C25D17/10

    Abstract: A plating apparatus according to the present disclosure includes an anode holder configured to hold an anode; a substrate holder placed opposite the anode holder and configured to hold a substrate; and an anode mask installed on a front face of the anode holder and provided with a first opening adapted to allow passage of an electric current flowing between an anode and the substrate. The diameter of the first opening in the anode mask is configured to be adjustable. When a first substrate is plated, a diameter of the first opening is adjusted to a first diameter. When a second substrate is plated, the diameter of the first opening is adjusted to a second diameter smaller than the first diameter.

    Abstract translation: 根据本公开的电镀设备包括:阳极保持器,其构造成保持阳极; 衬底保持器,与所述阳极保持器相对放置并且构造成保持衬底; 以及阳极掩模,其安装在所述阳极保持器的前表面上并且设置有适于允许在阳极和所述基板之间流动的电流通过的第一开口。 阳极掩模中的第一开口的直径被配置为可调节的。 当第一衬底被镀覆时,将第一开口的直径调节到第一直径。 当第二基板被镀覆时,将第一开口的直径调节到小于第一直径的第二直径。

    PLATING APPARATUS AND PLATING METHOD
    7.
    发明申请
    PLATING APPARATUS AND PLATING METHOD 审中-公开
    电镀设备和电镀方法

    公开(公告)号:US20150354084A1

    公开(公告)日:2015-12-10

    申请号:US14727674

    申请日:2015-06-01

    CPC classification number: C25D21/12

    Abstract: A plating apparatus 10 includes a rectifier 18 configured to apply a DC current to a substrate, and a plating apparatus control unit 30 that instructs the rectifier 18 on a value of the DC current. The plating apparatus control unit 30 has a setting unit 32 for setting a current value, a storage unit 34 that stores a relational expression between an instructed current value on which the rectifier 18 is instructed and an actual current value which the rectifier 18 outputs in accordance with the instructed current value, a calculation unit 38 that corrects the current value set by the setting unit 32 on the basis of the above-mentioned relational expression to calculate a corrected current value, and an instruction unit 36 that instructs the rectifier 18 on the corrected current value calculated by the calculation unit 38.

    Abstract translation: 电镀装置10包括被配置为向基板施加直流电流的整流器18以及指示整流器18的直流电流的值的电镀装置控制部30。 电镀装置控制单元30具有用于设定电流值的设定单元32,存储指示了整流器18的指示电流值与整流器18输出的实际电流值之间的关系式的存储单元34 利用指示的电流值,计算单元38,其基于上述关系表达式校正由设置单元32设置的当前值,以计算校正的电流值;以及指令单元36,其指示整流器18 由计算单元38计算的校正电流值。

    PLATING APPARATUS
    8.
    发明申请

    公开(公告)号:US20250146167A1

    公开(公告)日:2025-05-08

    申请号:US18557536

    申请日:2022-12-16

    Abstract: Proposed is a plating apparatus capable of detecting a film thickness of a plating film formed on a substrate during a plating process. The plating apparatus includes a plating tank, a substrate holder configured to hold a substrate, an anode disposed in the plating tank to oppose the substrate held by the substrate holder, a resistor disposed between the substrate and the anode to adjust an electric field, a first detection electrode disposed in a region between a surface to be plated of the substrate and the anode and having an electrode end disposed at a first position inside the resistor, a second detection electrode disposed at a second position where there is less change in potential as compared with the first position in the plating tank, and a controller that measures a potential difference between the first detection electrode and the second detection electrode, to estimate a thickness of a plating film on the substrate based on the potential difference.

    RESISTOR AND PLATING APPARATUS
    9.
    发明公开

    公开(公告)号:US20240279837A1

    公开(公告)日:2024-08-22

    申请号:US17790381

    申请日:2021-06-17

    CPC classification number: C25D17/007 C25D17/06 C25D21/10

    Abstract: Provided is a resistor or the like that can improve uniformity of a plating film formed on a substrate. A resistor disposed between a substrate and an anode in a plating tank is provided. The resistor includes a first plurality of holes each formed on three or more reference circles being concentric and having different diameters and a second plurality of holes formed on an outer circumferential reference line surrounding the three or more reference circles, at least a part of the outer circumferential reference line being a trochoid curve.

    PLATING APPARATUS
    10.
    发明公开
    PLATING APPARATUS 审中-公开

    公开(公告)号:US20230340688A1

    公开(公告)日:2023-10-26

    申请号:US18168486

    申请日:2023-02-13

    CPC classification number: C25D21/12 C25D17/02 C25D17/06 C25D17/10

    Abstract: An object is to precisely grasping, in real time, film thickness of a plated film during a plating process. A plating apparatus comprises: a plating tank for storing plating liquid; a substrate holder for holding a substrate; an anode arranged in the plating tank in such a manner that it faces the substrate held by the substrate holder; an electric potential sensor constructed in such a manner that it is arranged in a position close to the substrate held by the substrate holder, and measures electric potential of the plating liquid; and a state space model constructed to estimate current density of current flowing through an outer edge part of the substrate, based on a measured value of electric potential of the plating liquid obtained by the electric potential sensor and by using a state equation and an observation equation.

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