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公开(公告)号：AU2003301360A1
公开(公告)日：2004-05-04
申请号：AU2003301360
申请日：2003-09-02
Applicant: HONEYWELL INT INC
Inventor： GUENTER JAMES K , TATUM JAMES A , JOHNSON RALPH H
Abstract: A VCSEL having a metallic heat spreading layer adjacent a semiconductor buffer layer containing an insulating structure. The heat spreading layer includes an opening that enables light emitted by an active region to reflect from a distributed Bragg reflector (DBR) top mirror located above the heat spreading layer. A substrate is below the active region. A lower contact provides electrical current to that substrate. The lower contact includes an opening that enables light emitted from the active region to reflect from a distributed Bragg reflector (DBR) lower mirror. Beneficially, the substrate includes a slot that enables light to pass through an opening in the lower contact. That slot acts as an alignment structure that enables optical alignment of an external feature to the VCSEL.
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公开(公告)号：AU2003240522A1
公开(公告)日：2003-12-19
申请号：AU2003240522
申请日：2003-06-04
Applicant: HONEYWELL INT INC
Inventor： GUENTER JAMES K , TATUM JIMMY A
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公开(公告)号：CA2457691A1
公开(公告)日：2003-02-27
申请号：CA2457691
申请日：2002-08-12
Applicant: HONEYWELL INT INC
Inventor： GUENTER JAMES K , BIARD JAMES R , RABINOVICH SIMON , HAWKINS ROBERT M , HAJI-SHEIKH MICHAEL J
Abstract: Systems for wafer level burn-in (WLBI) of semiconductor devices (210, 215) a re presented. Systems having at least two electrodes for the application of electrical bias and/or thermal power on each side of a wafer (100) having ba ck (105) and front (110) electrical contacts for semiconductor devices borne by the wafer (100) is described. Methods of wafer level burnin using the system are also described. Furthermore, a pliable conductive layer (220) is describ ed for supplying pins or contacts (110) on device side of a wafer with electric al contact. The pliable conductive layer (220) can allow for an effective serie s R in each of the devices borne by the wafer (100), thus helping keep voltage bias level consistent. The pliable conductive layer can also prevent damage to a wafer when pressure is applied to it by chamber contacts (210, 215) and pressure onto surfaces of the wafer (100) during burn-in operations. A cooli ng system (660) is also described for enabling the application of a uniform temperature to the wafer (100) undergoing burn-in.
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公开(公告)号：AU2002309499A1
公开(公告)日：2002-11-11
申请号：AU2002309499
申请日：2002-03-12
Applicant: HONEYWELL INT INC
Inventor： GUENTER JAMES K , TATUM JIM
Abstract: A die having a semiconductor laser driven by a differential drive circuit is provided. The die provides a matched load to the drive circuit by also having a balancing load with an impedance, including both resistive and reactive components substantially identical to the load impedance of the semiconductor laser fabricated on the die. With the balancing load and semiconductor laser pair, the die prevents impedance-mismatch-induced drive problems that occur in high frequency operation, e.g., above about 1 GHz. The semiconductor laser may be a vertical cavity surface emitting laser (VCSEL), for example, as are used in high bandwidth applications like Gigabit Ethernet and Fibre Channel Applications. Furthermore, the die can form an array of balancing and semiconductor laser pairs.
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公开(公告)号：CA2435607A1
公开(公告)日：2002-07-25
申请号：CA2435607
申请日：2002-01-22
Applicant: HONEYWELL INT INC
Inventor： GUENTER JAMES K , JOHNSON RALPH H , BIARD JAMES R
IPC: H01L31/10 , H01L21/00 , H01L21/20 , H01L21/205 , H01L31/00 , H01L31/0304 , H01L31/18
Abstract: A method and apparatus for fabricating a metamorphic long-wavelength, high- speed photodiode, wherein a buffer layer matching a substrate lattice consta nt is formed at normal growth temperatures and a thin grading region which grad es past the desired lattice constant is configured at a low temperature. A reverse grade back is performed to match a desired lattice constant. Thereafter, a thick layer is formed thereon, based on the desired lattice constant. Annealing can then occur to isolate dislocated mater5ial in a grading layer and a reverse grading layer. Thereon a strained layer superlattice substrate is created upon which a high-speed photodiode can be formed. Implant or diffusion layers grown in dopants can be formed based on materials, such as Be, Mg, C, Te, Si, Se, Zn, or others a metal layer can be formed over a cap above a P+ region situated directly over an N-active regio n. The active region also includes a p-doped region. The high-speed photodiode can thus be formed utilizing GaAs, or other substrate material, such as germanium and silicon.
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Patent Agency Ranking
公开(公告)号：AT336012T
公开(公告)日：2006-09-15
申请号：AT02725632
申请日：2002-04-12
Applicant: HONEYWELL INT INC
Inventor： TATUM JIMMY A , GUENTER JAMES K
Abstract: Optical sensing systems and methods for detecting target characteristics are disclosed. An optical sensing system can detect target motion within a known environment. A laser source, such as a vertical cavity surface emitting laser, has at least two laser signal emission apertures. At least one detector is operationally responsive to laser signals. A motion analysis module cooperates with a microprocessor to determine motion characteristics of an objected detected within said environment. A laser source emits at least two laser signals into an environment occupied by a target, said at least one detector detects changes in said at least two laser signals after said signals pass through said environment and interfere with a detected object, and said microprocessor determines target characteristics based on said signals received by said detector and input from said motion analysis module, at least one detector, which is operationally responsive to the laser source. The system can also include a microprocessor that is operationally coupled to the detector(s) for processing signal data, a memory accessible by the microprocessor for storing target characteristics (e.g., unique signals), and a software module accessible by the microprocessor for enabling system training and detection operations.
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公开(公告)号：AT302955T
公开(公告)日：2005-09-15
申请号：AT02762054
申请日：2002-04-12
Applicant: HONEYWELL INT INC
Inventor： TATUM JIMMY A , GUENTER JAMES K
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公开(公告)号：AU2002323126A1
公开(公告)日：2003-03-03
申请号：AU2002323126
申请日：2002-08-12
Applicant: HONEYWELL INT INC
Inventor： HAWKINS ROBERT M , HAJI-SHEIKH MICHAEL J , RABINOVICH SIMON , BIARD JAMES R , GUENTER JAMES K
Abstract: Disclosed are methods for providing wafer parasitic current control to a semiconductor wafer (1500) having a substrate (1520), at least one active layer (1565) and a surface layer (1510), and electrical contacts (1515) formed on said surface layer (1510). Current control can be achieved with the formation of trenches (1525) around electrical contacts, where electrical contacts and associated layers define an electronic device. Insulating implants (1530) can be placed into trenches (1525) and/or sacrificial layers (1540) can be formed between electronic contacts (1515). Trenches control current by promoting current flow within active (e.g., conductive) regions (1560) and impeding current flow through inactive (e.g., nonconductive) regions (1550). Methods of and systems for wafer level burn-in (WLBI) of semiconductor devices are also disclosed. Current control at the wafer level is important when using WLBI methods and systems.
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公开(公告)号：CA2441090A1
公开(公告)日：2002-11-07
申请号：CA2441090
申请日：2002-03-12
Applicant: HONEYWELL INT INC
Inventor： GUENTER JAMES K , TATUM JIM
Abstract: A die having a semiconductor laser driven by a differential drive circuit is provided. The die provides a matched load to the drive circuit by also havin g a balancing load with an impedance, including both resistive and reactive components, substantially identical to the load impedance of the semiconduct or laser fabricated on the die. With the balancing load and semiconductor laser pair, the die prevents impedance-mismatch-induced drive problems that occur in high frequency operation, e.g., above about 1 GHz. The semiconductor laser m ay be a vertical cavity surface emitting laser (VCSEL), for example, as are use d in high bandwidth applications like Gigabit Ethernet and Fibre Channel Applications. Furthermore, the die can form an array of balancing and semiconductor laser pairs.
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公开(公告)号：CA2443988A1
公开(公告)日：2002-10-24
申请号：CA2443988
申请日：2002-04-12
Applicant: HONEYWELL INT INC
Inventor： TATUM JIMMY A , GUENTER JAMES K
Abstract: A laser optical sensing system and method for detecting target characteristi cs are disclosed. The system includes a laser source (105) with at least two emission apertures from which laser signals are emitted. The system also includes at least one detector (103), which is operationally responsive to t he laser source (105). The system includes a microprocessor (101) that is operationally coupled at least one detector (103) for processing signal data , a memory (102) accessible by the microprocessor (101) for storing target characteristics (e.g., unique signals), and at least one software module (10 6) accessible by the microprocessor for enabling system training and detection operations. In operation, the laser source emits (111) into an environment a t least two laser signals, one from each emission aperture. The detector detec ts (112) the laser signals after the signals pass through the environment, whic h is occupied by a target, and the microprocessor determines (114) target characteristics based on the matching of laser signals received (113) by the detector(s) and characteristics stored in memory.
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