公开(公告)号：FR2308201A1

公开(公告)日：1976-11-12

申请号：FR7605145

申请日：1976-02-17

Applicant: IBM

Inventor： MAGDO INGRID E ,  MAGDO STEVEN

IPC: H01L21/033 ,  H01L21/223 ,  H01L21/314 ,  H01L21/76 ,  H01L21/32 ,  H01L21/762 ,  H01L21/318 ,  H01L21/82 ,  H01L27/06

Abstract: In the fabrication of integrated circuits, a method is provided for forming masking structures comprising silicon nitride which avoids the stresses and dislocations associated with direct silicon nitride masking as well as the "bird's beak" problems associated with silicon dioxide-silicon nitride composite mask structures. The mask is formed by first forming a silicon dioxide mask having at least one opening through which the substrate is exposed. Then, a mask comprising silicon nitride is formed on the first mask; this mask has at least one opening laterally smaller than the openings in the first mask and respectively in registration with at least some of the openings in said first mask. Thus, the second mask contacts and covers a portion of the exposed silicon substrate under each of the registered openings.

公开(公告)号：DE2317577A1

公开(公告)日：1974-01-17

申请号：DE2317577

申请日：1973-04-07

Applicant: IBM

Inventor： MAGDO INGRID E ,  MAGDO STEVEN

IPC: H01L29/73 ,  H01L21/22 ,  H01L21/32 ,  H01L21/331 ,  H01L21/76 ,  H01L21/762 ,  H01L21/8238 ,  H01L27/082 ,  H01L29/78 ,  H01L19/00

Abstract: A method of fabricating a planar dielectrically isolated semiconductor device by depositing a surface layer of dielectric material on a major surface of a monocrystalline substrate, removing portions of the layer to define annular channels, thermally oxidizing the exposed surface areas thereby forming annular ridges of SiO2, removing portions of the dielectric layer, selectively growing an epitaxial silicon layer over the surface wherein the surfaces of the annular ridges of SiO2 and the regions of epitaxial silicon are substantially co-planar.