Magnetoresistive read transducer
    31.
    发明专利

    公开(公告)号:SG44410A1

    公开(公告)日:1997-12-19

    申请号:SG1996000218

    申请日:1994-07-04

    Applicant: IBM

    Abstract: A magnetoresistive (MR) read transducer is disclosed having passive end regions separated by a central active region in which an MR layer is formed over substantially only the central active region and in which a magnetic bias layer is formed in each passive end region. In one embodiment, each of the magnetic bias layers includes a layer of ferromagnetic material and a layer of antiferromagnetic material overlaying and in contact with the ferromagnetic layer to provide an exchange-coupled magnetic bias field. Alternatively a hard magnetic material is used to form the biasing layer. Each of the magnetic bias layers form an abutting junction having magnetic and electrical continuity with the MR layer to produce a stable longitudinal magnetic bias field in the transducer, even when the length of the active region is small to accommodate small track widths.

    Magnetoresistive read transducer having improved bias profile

    公开(公告)号:SG44404A1

    公开(公告)日:1997-12-19

    申请号:SG1996000193

    申请日:1993-02-18

    Applicant: IBM

    Abstract: A magnetoresistive (MR) read transducer having passive end regions (28, 38) separated by a central active region (25, 34) comprises an MR layer (27, 31) made from a material having a low uniaxial magnetic anisotropy. A soft magnetic bias layer (24, 33) is adjacent to but spaced from the MR layer in the central region (25, 34) only, and the soft magnetic bias layer (24, 33) is made from a material having a high uniaxial magnetic anisotropy. A longitudinal bias is produced directly in each of the end regions (28, 38) only, and the means for producing the longitudinal bias comprises a layer (26) made from a material having a high uniaxial magnetic anisotropy. Control of the uniaxial anisotropy can be achieved by choosing materials of appropriate magnetostriction or intrinsic uniaxial anisotropy.

    Disk drive
    33.
    发明专利

    公开(公告)号:SG42850A1

    公开(公告)日:1997-10-17

    申请号:SG1996000138

    申请日:1994-10-18

    Applicant: IBM

    Abstract: A rotary actuator disk drive uses substantially identical dual-element inductive write/magnetoresistive read transducers for both the top and bottom disk surfaces. There is no requirement that the read elements be mechanically offset from the write elements, as is typically the case in rotary actuator disk drives due to the head-to-track skew caused by the inherent nonlinear path of the heads across the data tracks. The transducers are supported on the trailing ends of the head carriers in such a manner that the geometric centers of the read and write elements are aligned without any mechanical offset. The sense current for the magnetoresistive elements is provided with opposite polarity to the elements on the top and bottom disk surfaces to shift the magnetic centers of the top and bottom read elements in opposite directions relative to their geometric centers. The amount and direction of the magnetic shift is such that the read elements are effectively offset from their respective write elements so that the skew caused by the rotary actuator has minimal effect on alignment of the read and write elements with the data tracks.

    Multilayer magnetoresistive sensor
    34.
    发明专利

    公开(公告)号:SG42849A1

    公开(公告)日:1997-10-17

    申请号:SG1996000132

    申请日:1994-12-16

    Applicant: IBM

    Abstract: A magnetoresistive read sensor incorporates a multilayer sensing element formed of one or more magnetoresistive elements in a planar array, each magnetoresistive element having a multilayer structure of at least two ferromagnetic layers separated by a nonmagnetic layer. The ferromagnetic layers are coupled antiferromagnetically by magnetostatic coupling at opposing edges of the ferromagnetic layers. A bias layer separated from the magnetoresistive sensing element by a spacer layer provides a magnetic field to bias the magnetoresistive sensing element at a desired non-signal point for linear response. The magnetoresistive sensing element is formed by alternatively depositing layers of ferromagnetic material and layers of nonmagnetic material on a substrate and then patterning the resulting structure using photolithographic techniques to provide a planar array of magnetoresistive elements. A conductive layer is deposited over the array filling in the spaces separating the magnetoresistive elements to provide electrical conductivity between the elements in the plane of the structure.

    Read/write magnetoresistive (MR) head with sunken components

    公开(公告)号:SG34292A1

    公开(公告)日:1996-12-06

    申请号:SG1995001663

    申请日:1995-10-28

    Applicant: IBM

    Abstract: A combined sunken magnetoresistive (MR) read/write head (30B) is provided wherein at least one (S1) of the first and second shield layers (S1,S2) are eliminated or thinned down in an insulation stack region just behind a pole tip region. This provides a depression behind the pole tip region where head components, such as the write coil, insulation stack and pole pieces of a write head, are located. In preferred embodiments, leads for an MR sensor of the head extend parallel to an air bearing surface (ABS) where they connect to first and second conductors beyond the limits of the shield layers. The conductors extend back into the head normal to the air bearing surface without any danger of shorting to the shield layers.

    36.
    发明专利
    未知

    公开(公告)号:DE69115070D1

    公开(公告)日:1996-01-18

    申请号:DE69115070

    申请日:1991-02-04

    Applicant: IBM

    Abstract: A method for producing a magnetic structure, such as a thin film magnetic head, in which the magnetic and electrical characteristics of magnetic material are tailored to produce magnetic and electrical characteristics in selected localized areas of the magnetic material. In an embodiment, the structure comprises a layer of magnetic material having an overlayer and an underlayer, and the magnetic characteristics of the material are modified by rapid thermal annealing.

    38.
    发明专利
    未知

    公开(公告)号:DE3672725D1

    公开(公告)日:1990-08-23

    申请号:DE3672725

    申请日:1986-07-22

    Applicant: IBM

    Inventor: TSANG CHING HWA

    Abstract: A magnetoresistive (MR) read transducer assembly comprises a thin film MR layer (10) which is longitudinally biased only in the end regions (12) by exchange bias developed by a thin film of antiferro­magnetic material (16) that is deposited in direct contact with the MR layer in the end regions. The longitudinal bias is of a level suffi­cient to maintain the end regions of the MR layer in a single domain state and thereby induce a single domain state in the central region (14) of the MR layer. Transverse bias is produced within the central region of the MR layer of a level sufficient to maintain that region of the MR layer in a linear response mode. Spaced conductive elements (18,20) are connected to the MR layer within the central region to define a detection region so that sensing means connected to the con­ductive elements can determine the resistance changes in the detection region of the MR layer resulting from the magnetic fields intercepted by the MR layer.

    DUAL ELEMENT MAGNETIC TRANSDUCER
    39.
    发明专利

    公开(公告)号:DE3380328D1

    公开(公告)日:1989-09-07

    申请号:DE3380328

    申请日:1983-11-15

    Applicant: IBM

    Abstract: A dual element magnetic transducer in which the thin film M/R read element is transversely biased by flux in the air gap of the inductive write core generated by a bias current supplied to the write winding. Flux in the air gap biases the M/R element because different integral portions of the M/R element have a different spatial relationship to parallel opposing portions of the inductive core. The flux which would normally pass through the gap substantially normal to the sides of the core defining the gap now tends to follow the M/R element along a direction normal or transverse to the media to a point where the distance between the M/R element and the core is smaller than where it entered. By appropriate control of the bias current and the spatial relationships, a relatively efficient, simple to manufacture dual element magnetic transducer is provided.

    MAGNETORESISTIVE READ TRANSDUCER
    40.
    发明专利

    公开(公告)号:AU579253B2

    公开(公告)日:1988-11-17

    申请号:AU5949386

    申请日:1986-07-02

    Applicant: IBM

    Inventor: TSANG CHING HWA

    Abstract: A magnetoresistive (MR) read transducer assembly comprises a thin film MR layer (10) which is longitudinally biased only in the end regions (12) by exchange bias developed by a thin film of antiferro­magnetic material (16) that is deposited in direct contact with the MR layer in the end regions. The longitudinal bias is of a level suffi­cient to maintain the end regions of the MR layer in a single domain state and thereby induce a single domain state in the central region (14) of the MR layer. Transverse bias is produced within the central region of the MR layer of a level sufficient to maintain that region of the MR layer in a linear response mode. Spaced conductive elements (18,20) are connected to the MR layer within the central region to define a detection region so that sensing means connected to the con­ductive elements can determine the resistance changes in the detection region of the MR layer resulting from the magnetic fields intercepted by the MR layer.

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