公开(公告)号：US20140346590A1

公开(公告)日：2014-11-27

申请号：US13902151

申请日：2013-05-24

Applicant: Infineon Technologies AG

Inventor： Andreas Meiser ,  Till Schloesser ,  Franz Hirler

IPC: H01L29/78 ,  H01L29/66

CPC classification number: H01L29/7813 ,  H01L29/66204 ,  H01L29/66734 ,  H01L29/7391

Abstract: A semiconductor device formed in a semiconductor substrate includes a source region, a drain region, a gate electrode, and a body region disposed between the source region and the drain region. The gate electrode is disposed adjacent at least two sides of the body region, and the source region and the gate electrode are coupled to a source terminal. A width of the body region between the two sides of the body region is selected so that the body region is configured to be fully depleted.

Abstract translation: 形成在半导体衬底中的半导体器件包括源极区，漏极区，栅电极和设置在源极区和漏极区之间的体区。 栅电极被设置在身体区域的至少两侧附近，并且源极区域和栅极电极耦合到源极端子。 选择身体区域的两侧之间的身体区域的宽度，使得身体区域被配置为完全耗尽。

公开(公告)号：US08860136B2

公开(公告)日：2014-10-14

申请号：US13692397

申请日：2012-12-03

Applicant: Infineon Technologies AG

Inventor： Andreas Meiser ,  Till Schloesser

IPC: H01L27/06 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L29/78 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/4175 ,  H01L29/41766 ,  H01L29/42376 ,  H01L29/66666 ,  H01L29/66696 ,  H01L29/66704 ,  H01L29/7825 ,  H01L29/785

Abstract: A semiconductor device includes a transistor, formed in a semiconductor substrate having a first main surface. The transistor includes a source region, a drain region, a channel region, a drift zone, and a gate electrode being adjacent to the channel region, the gate electrode configured to control a conductivity of a channel formed in the channel region. The channel region and the drift zone are disposed along a first direction between the source region and the drain region, the first direction being parallel to the first main surface. The channel region has a shape of a ridge extending along the first direction and the drift zone including a superjunction layer stack.

Abstract translation: 半导体器件包括形成在具有第一主表面的半导体衬底中的晶体管。 所述晶体管包括源极区，漏极区，沟道区，漂移区以及与所述沟道区相邻的栅极，所述栅电极被配置为控制在所述沟道区中形成的沟道的导电性。 沟道区域和漂移区域沿着源极区域和漏极区域之间的第一方向设置，第一方向平行于第一主表面。 沟道区具有沿着第一方向延伸的脊的形状，并且漂移区包括超结层层叠。

公开(公告)号：US08847311B2

公开(公告)日：2014-09-30

申请号：US13731380

申请日：2012-12-31

Applicant: Infineon Technologies AG

Inventor： Andreas Meiser ,  Franz Hirler ,  Christian Kampen

IPC: H01L29/78 ,  H01L29/66

CPC classification number: H01L21/383 ,  H01L29/402 ,  H01L29/407 ,  H01L29/66803 ,  H01L29/7816 ,  H01L29/785

Abstract: A semiconductor device includes a transistor, formed in a semiconductor substrate having a first main surface. The transistor includes a channel region, doped with dopants of a first conductivity type, a source region, a drain region, the source and the drain region being doped with dopants of a second conductivity type different from the first conductivity type, a drain extension region, and a gate electrode adjacent to the channel region. The channel region is disposed in a first portion of a ridge. The drain extension region is disposed in a second portion of the ridge, and includes a core portion doped with the first conductivity type. The drain extension region further includes a cover portion doped with the second conductivity type, the cover portion being adjacent to at least one or two sidewalls of the second portion of the ridge.

Abstract translation: 半导体器件包括形成在具有第一主表面的半导体衬底中的晶体管。 晶体管包括掺杂有第一导电类型的掺杂剂的沟道区，源极区，漏极区，源极和漏极区掺杂有不同于第一导电类型的第二导电类型的掺杂剂;漏极延伸区 ，以及与沟道区相邻的栅电极。 通道区域设置在脊的第一部分中。 漏极延伸区域设置在脊的第二部分中，并且包括掺杂有第一导电类型的芯部分。 漏极延伸区域还包括掺杂有第二导电类型的覆盖部分，覆盖部分邻近脊部的第二部分的至少一个或两个侧壁。

公开(公告)号：US12300724B2

公开(公告)日：2025-05-13

申请号：US17496050

申请日：2021-10-07

Applicant: Infineon Technologies AG

Inventor： Andreas Meiser ,  Caspar Leendertz ,  Anton Mauder ,  Roland Rupp

IPC: H01L29/16 ,  H01L21/02 ,  H01L29/04 ,  H01L29/06 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/739 ,  H01L29/78

Abstract: A semiconductor device includes a trench structure extending from a first surface into a silicon carbide semiconductor body, the trench structure having a gate electrode that is dielectrically insulated from the semiconductor body, a shielding region adjoining a bottom of the trench structure and forming a first pn junction with a drift structure of the semiconductor body, a body region forming a second pn junction with the drift structure, a source zone arranged between the first surface and the body region and forming a third pn junction with the source zone, wherein a contact portion of the body region extends to the first surface, wherein the source zone surrounds the contact portion of the body region at the first surface, and wherein the trench structure forms an enclosed loop at the first surface that surrounds the source zone and the contact portion of the body region at the first surface.

公开(公告)号：US11121220B2

公开(公告)日：2021-09-14

申请号：US16700475

申请日：2019-12-02

Applicant: Infineon Technologies AG

Inventor： Andreas Meiser ,  Caspar Leendertz ,  Anton Mauder ,  Roland Rupp

IPC: H01L29/10 ,  H01L29/66 ,  H01L29/06 ,  H01L29/78 ,  H01L29/423 ,  H01L29/417 ,  H01L29/16

Abstract: A semiconductor device includes a silicon carbide semiconductor body including a source region of a first conductivity type, a body region of a second conductivity type, shielding regions of the second conductivity type and compensation regions of the second conductivity type. Trench structures extend from a first surface into the silicon carbide semiconductor body along a vertical direction. Each of the trench structures includes an auxiliary electrode at a bottom of the trench structure and a gate electrode between the auxiliary electrode and the first surface. The auxiliary electrode is electrically insulated from the gate electrode. The auxiliary electrode of each of the trench structures is adjoined by at least one of the shielding regions at the bottom of the trench structure. Each of the shielding regions is adjoined by at least one of the compensation regions at the bottom of the shielding region.

公开(公告)号：US10700061B2

公开(公告)日：2020-06-30

申请号：US15351816

申请日：2016-11-15

Applicant: Infineon Technologies AG

Inventor： Andreas Meiser ,  Dirk Ahlers ,  Till Schloesser

IPC: H01L21/8234 ,  H01L27/088 ,  H01L29/78 ,  H03K17/687

Abstract: A semiconductor device includes a first transistor and a second transistor in a semiconductor substrate. The first transistor includes a first drain contact electrically connected to a first drain region, the first drain contact including a first drain contact portion and a second drain contact portion. The first drain contact portion includes a drain conductive material in direct contact with the first drain region. The second transistor includes a second source contact electrically connected to a second source region. The second source contact includes a first source contact portion and a second source contact portion. The first source contact portion includes a source conductive material in direct contact with the second source region.

公开(公告)号：US10582580B2

公开(公告)日：2020-03-03

申请号：US15139800

申请日：2016-04-27

Applicant: Infineon Technologies AG

Inventor： Andreas Meiser ,  Till Schloesser

IPC: H02M3/156 ,  H05B33/08 ,  H01L27/088 ,  H02M1/088

Abstract: A switch comprises a field effect transistor in a semiconductor substrate having a first main surface. The field effect transistor comprises a source region, a drain region, a body region, and a gate electrode at the body region, the gate electrode being configured to control a conductivity of a channel formed in the body region. The gate electrode is disposed in gate trenches. The body region is disposed along a first direction between the source region and the drain region, the first direction being parallel to the first main surface. The body region has a shape of a ridge extending along the first direction. The body region is adjacent to the source region and the drain region. The switch further comprises a source contact and a body contact portion, the source contact being electrically connected to a source terminal. The body contact portion is in contact with the source contact and is electrically connected to the body region.

公开(公告)号：US20200027969A1

公开(公告)日：2020-01-23

申请号：US16514292

申请日：2019-07-17

Applicant: Infineon Technologies AG

Inventor： Till Schloesser ,  Christian Kampen ,  Andreas Meiser

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/06

Abstract: A method for producing a semiconductor component includes: providing a semiconductor body having a first dopant of a first conductivity type; forming a first trench in the semiconductor body starting from a first side; filling the first trench with a semiconductor filler material; forming a superjunction structure by introducing a second dopant of a second conductivity type into the semiconductor body, the semiconductor filler material being doped with the second dopant; forming a second trench in the semiconductor body starting from the first side; and forming a trench structure in the second trench.

公开(公告)号：US10483360B2

公开(公告)日：2019-11-19

申请号：US15833576

申请日：2017-12-06

Applicant: Infineon Technologies AG

Inventor： Andreas Meiser ,  Oliver Haeberlen

IPC: H01L29/40 ,  H01L29/66 ,  H01L29/78 ,  H01L21/3115 ,  H01L29/417 ,  H01L29/06 ,  H01L29/10 ,  H01L29/08

Abstract: A method of manufacturing a semiconductor device is providing, which includes forming a trench in a semiconductor substrate, forming an oxide layer over sidewalls and over a bottom side of the trench, performing an ion implantation process, forming a cover layer, and patterning the covering layer, thereby forming an uncovered area and a covered area of the oxide layer, respectively. The method further includes performing an isotropic etching process thereby removing portions of the uncovered area of the oxide layer and removing a part of a surface portion of the covered area adjacent to the uncovered portions, and removing remaining portions of the covering layer.

公开(公告)号：US20190312114A1

公开(公告)日：2019-10-10

申请号：US16376266

申请日：2019-04-05

Applicant: Infineon Technologies AG

Inventor： Andreas Meiser ,  Ralf Rudolf

IPC: H01L29/40 ,  H01L29/06 ,  H01L21/265 ,  H01L21/761 ,  H01L21/765

Abstract: A semiconductor device includes a semiconductor substrate of a first conductivity type and a semiconductor layer of a second conductivity type on the semiconductor substrate, such that a first section of a pn junction is formed between the semiconductor layer and the semiconductor substrate. A trench structure extends through the semiconductor layer into the semiconductor substrate. The trench structure includes an insulation structure and a contact structure. The insulation structure is formed between the semiconductor layer and the contact structure. The contact structure is electrically connected to the semiconductor substrate at a bottom of the trench. A first semiconductor region of the second conductivity type adjoins the insulation structure and extends along the trench structure into a depth range between the first section of the pn junction and the bottom, such that a second section of the pn junction is formed between the first semiconductor region and the semiconductor substrate.