公开(公告)号：DE50110697D1

公开(公告)日：2006-09-21

申请号：DE50110697

申请日：2001-01-08

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KLEIN WOLFGANG ,  LACHNER RUDOLF ,  MOLZER WOLFGANG

IPC: H01L21/331 ,  H01L29/737 ,  H01L29/165

Abstract: A silicon-germanium bipolar transistor includes a silicon substrate in which a first n-doped emitter region, a second p-doped base region adjoining the latter and a third n-doped collector region adjoining the latter, are formed. A first space charge zone is formed between the emitter region and the base region and a second space charge zone is formed between the base region and the collector region. The base region and an edge zone of the adjoining emitter region are alloyed with germanium. The germanium concentration in the emitter region rises toward the base region. The germanium concentration in a junction region containing the first space charge zone rises less sharply than in the emitter region or decreases and, in the base region, it initially again rises more sharply than in the junction region.

公开(公告)号：AT336079T

公开(公告)日：2006-09-15

申请号：AT01905609

申请日：2001-01-08

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KLEIN WOLFGANG ,  LACHNER RUDOLF ,  MOLZER WOLFGANG

IPC: H01L21/331 ,  H01L29/165 ,  H01L29/737

Abstract: A silicon-germanium bipolar transistor includes a silicon substrate in which a first n-doped emitter region, a second p-doped base region adjoining the latter and a third n-doped collector region adjoining the latter, are formed. A first space charge zone is formed between the emitter region and the base region and a second space charge zone is formed between the base region and the collector region. The base region and an edge zone of the adjoining emitter region are alloyed with germanium. The germanium concentration in the emitter region rises toward the base region. The germanium concentration in a junction region containing the first space charge zone rises less sharply than in the emitter region or decreases and, in the base region, it initially again rises more sharply than in the junction region.

公开(公告)号：DE10002364A1

公开(公告)日：2001-08-02

申请号：DE10002364

申请日：2000-01-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： LACHNER RUDOLF ,  MOLZER WOLFGANG ,  KLEIN WOLFGANG

IPC: H01L21/331 ,  H01L29/165 ,  H01L29/737 ,  H01L29/73

Abstract: The invention relates to a silicon/germanium bipolar transistor, wherein a first n doped emitter region (1) and a second subsequent p doped base region and a third subsequent n doped collector region are formed in a silicon substrate (7). A first space charge region (4) is formed between the emitter region (1) and the base region (2). A second space charge region (5) is formed between the base region (2) and a collector region (3). The base region (2) and the edge region of the bordering emitter region (1) is alloyed with germanium. The concentration of germanium increases in the emitter region (1) leading towards the base region (2). The concentration of germanium in a transition area in which the first space charge zone (4) is located increases to a lesser degree than in the emitter region (1) or even decreases. The concentration of germanium in the base region (2) increases to a greater degree than in the transition region.