公开(公告)号：DE102006023429A1

公开(公告)日：2007-11-22

申请号：DE102006023429

申请日：2006-05-18

Applicant: INFINEON TECHNOLOGIES AG

Inventor： RUSS CHRISTIAN ,  GOSSNER HARALD ,  FULDE MICHAEL

IPC: H01L23/60 ,  H01L27/08

Abstract: According to one embodiment of the present invention, an ESD protection element for use in an electrical circuit is provided, including a plurality of diodes which are connected in series with one another and which are formed in a contiguous active area, wherein the ESD protection element has a fin structure.

公开(公告)号：DE102004062205B4

公开(公告)日：2007-04-05

申请号：DE102004062205

申请日：2004-12-23

Applicant: INFINEON TECHNOLOGIES AG

Inventor： RUSS CHRISTIAN ,  MARK MICHAEL ,  FEHLE JUERGEN

IPC: H01L23/60 ,  H02H9/04

Abstract: Illustrative apparatuses and methods for electrostatic discharge protection are described in which the frequency of a voltage received at a first circuit node is filtered to generate a filtered voltage, one or more control signals are generated having either a first voltage or a second voltage depending upon the value of the filtered voltage, and the first circuit node is selectively connected with a second circuit node depending upon the value of the one or more control signals.

公开(公告)号：DE102004062205A1

公开(公告)日：2006-07-20

申请号：DE102004062205

申请日：2004-12-23

Applicant: INFINEON TECHNOLOGIES AG

Inventor： RUSS CHRISTIAN ,  MARK MICHAEL ,  FEHLE JUERGEN

IPC: H01L23/60 ,  H02H9/04

Abstract: Illustrative apparatuses and methods for electrostatic discharge protection are described in which the frequency of a voltage received at a first circuit node is filtered to generate a filtered voltage, one or more control signals are generated having either a first voltage or a second voltage depending upon the value of the filtered voltage, and the first circuit node is selectively connected with a second circuit node depending upon the value of the one or more control signals.

公开(公告)号：DE102004006484A1

公开(公告)日：2005-08-25

申请号：DE102004006484

申请日：2004-02-10

Applicant: INFINEON TECHNOLOGIES AG

Inventor： RUSS CHRISTIAN ,  GOSSNER HARALD ,  SCHNEIDER JENS ,  ESMARK KAI

IPC: H01L27/08 ,  H01L29/94 ,  H01L23/62 ,  H01L21/822

Abstract: Integrated circuit (10) contains reference operational potential line (18), under basic potential in specified strength. Between both potential lines is fitted capacitor (12) with specified zones. Specified zones include main doping region (20), coupling region (22,24) with main type doping and electrode region (30) spaced from main doping region. Between electrode and main doping regions is deposited dielectric (28). Further details are specified. An independent claim is also included for method of manufacturing integrated circuits with capacitors.