公开(公告)号：WO2011026126A2

公开(公告)日：2011-03-03

申请号：PCT/US2010047373

申请日：2010-08-31

Applicant: LAM RES CORP ,  DHINDSA RAJINDER ,  KOSHISHI AKIRA ,  MARAKHTANOV ALEXEI

Inventor： DHINDSA RAJINDER ,  KOSHISHI AKIRA ,  MARAKHTANOV ALEXEI

IPC: H05H1/46 ,  C23C16/50 ,  H01L21/3065

CPC classification number: H01J37/32642 ,  H01J37/32623

Abstract: An arrangement for performing plasma confinement within a processing chamber during substrate processing is provided. The arrangement includes a first peripheral ring positioned next to a secondary peripheral ring. The first peripheral ring surrounds a confined chamber volume that sustains plasma for etching a substrate. The first peripheral ring includes a first plurality of slots for exhausting processed byproduct gas from the confined chamber volume. The second peripheral ring includes a second plurality of slots that is positioned next to the first plurality of slots such that the second plurality of slots does not overlap the first plurality of slots, thereby preventing a direct line-of-sight from within the confined chamber volume to an outside chamber volume (an area outside of the first peripheral ring). The arrangement also includes a manifold connecting the two rings to provide a route for exhausting the processed byproduct gas from the confined chamber volume.

Abstract translation: 提供了一种用于在衬底处理期间在处理室内执行等离子体约束的装置。 该装置包括邻近次级外围环的第一外围环。 第一外围环围绕维持等离子体以用于蚀刻衬底的限制室体积。 第一周边环包括用于从受限制室容积排出经处理的副产物气体的第一多个槽。 第二周边环包括第二多个槽，其位于第一多个槽的旁边，使得第二多个槽不与第一多个槽重叠，从而防止从限制室内的直接视线 体积到外部室容积（第一外围环的外部的区域）。 该布置还包括连接两个环的歧管，以提供用于从被限制的室容积排出经处理的副产物气体的路线。

公开(公告)号：WO2010117969A3

公开(公告)日：2011-01-13

申请号：PCT/US2010030019

申请日：2010-04-06

Applicant: LAM RES CORP ,  MARAKHTANOV ALEXEI ,  HUDSON ERIC ,  DHINDSA RAJINDER ,  BAILEY ANDREW

Inventor： MARAKHTANOV ALEXEI ,  HUDSON ERIC ,  DHINDSA RAJINDER ,  BAILEY ANDREW

IPC: H01L21/3065 ,  H05H1/24 ,  H05H1/36

CPC classification number: H01L21/3065 ,  H01J37/32009 ,  H01J37/32137 ,  H01J37/32146 ,  H01J2237/334 ,  H01J2237/3348

Abstract: A method is provided for operating a processing system having a space therein arranged to receive a gas and an electromagnetic field generating portion operable to generate an electromagnetic field within the space. The method includes providing a gas into the space, and operating the electromagnetic field generating portion with a driving potential to generate an electromagnetic field within the space to transform at least a portion of the gas into plasma. The driving potential as a function of time is based on a first potential function portion and a second potential function portion. The first potential function portion comprises a first continuous periodic portion having a first amplitude and a first frequency. The second potential function portion comprises a second periodic portion having an maximum amplitude portion, and minimum amplitude portion and a duty cycle. The maximum amplitude portion is a higher amplitude than the minimum amplitude portion. The duty cycle is the ratio of a duration of the maximum amplitude portion to the sum of the duration of the maximum amplitude portion and the duration of the minimum amplitude portion. The second periodic portion additionally has a second frequency during the maximum amplitude portion. An amplitude modulation of the second periodic portion is phase locked to the first continuous periodic portion.

Abstract translation: 提供了一种操作处理系统的方法，该处理系统具有布置成接收气体的空间和可操作以在该空间内产生电磁场的电磁场产生部分。 所述方法包括向所述空间提供气体，以及利用驱动电位操作所述电磁场产生部分，以在所述空间内产生电磁场，以将所述气体的至少一部分转化为等离子体。 作为时间的函数的驱动电位基于第一潜在功能部分和第二电位功能部分。 第一潜在功能部分包括具有第一幅度和第一频率的第一连续周期部分。 第二电位功能部分包括具有最大振幅部分和最小振幅部分和占空比的第二周期部分。 最大幅度部分比最小振幅部分的幅度更大。 占空比是最大幅度部分的持续时间与最大振幅部分的持续时间和最小振幅部分的持续时间之和的比率。 第二周期部分在最大振幅部分期间另外具有第二频率。 第二周期部分的幅度调制被锁相到第一连续周期部分。

公开(公告)号：WO2010019197A2

公开(公告)日：2010-02-18

申请号：PCT/US2009004495

申请日：2009-08-06

Applicant: LAM RES CORP ,  DHINDSA RAJINDER

Inventor： DHINDSA RAJINDER

IPC: H05H1/34 ,  H01L21/203 ,  H01L21/205 ,  H01L21/265 ,  H01L21/3065

CPC classification number: H01L21/67069 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32541 ,  H01J37/32605 ,  Y10T29/49002 ,  Y10T29/4913 ,  Y10T29/49401 ,  Y10T29/49428 ,  Y10T29/49769 ,  Y10T29/49895 ,  Y10T29/49959 ,  Y10T156/10

Abstract: A showerhead electrode for a plasma processing apparatus includes an interface gel between facing surfaces of an electrode plate and a backing plate. The interface gel maintains thermal conductivity during lateral displacements generated during temperature cycling due to mismatch in coefficients of thermal expansion. The interface gel comprises, for example, a silicone based composite filled with aluminum oxide microspheres. The interface gel can conform to irregularly shaped features and maximize surface contact area between mating surfaces. The interface gel can be pre-applied to a consumable upper electrode.

Abstract translation: 用于等离子体处理装置的喷头电极包括在电极板和背板的相对表面之间的界面凝胶。 界面凝胶在温度循环期间由于热膨胀系数不匹配而产生的横向位移期间保持导热性。 界面凝胶包括例如填充有氧化铝微球的硅氧烷基复合材料。 界面凝胶可以符合不规则形状的特征并最大化配合表面之间的表面接触面积。 界面凝胶可以预先施加到可消耗的上电极上。

公开(公告)号：WO2009042137A3

公开(公告)日：2009-06-04

申请号：PCT/US2008011052

申请日：2008-09-24

Applicant: LAM RES CORP ,  DHINDSA RAJINDER

Inventor： DHINDSA RAJINDER

IPC: H01L21/304

CPC classification number: H05B3/03 ,  H01J37/32091 ,  H01J37/32724

Abstract: A temperature control module for a showerhead electrode assembly for a semiconductor material plasma processing chamber includes a heater plate adapted to be secured to a top surface of a top electrode of the showerhead electrode assembly, and which supplies heat to the top electrode to control the temperature of the top electrode; a cooling plate adapted to be secured to and thermally isolated from a surface of a top plate of the showerhead electrode assembly, and to cool the heater plate and control heat conduction between the top electrode and heater plate; and at least one thermal choke adapted to control heat conduction between the heater plate and cooling plate.

Abstract translation: 用于半导体材料等离子体处理室的喷头电极组件的温度控制模块包括加热器板，该加热器板适于固定到喷头电极组件的顶部电极的顶表面，并且将热量供应到顶部电极以控制温度 的顶部电极; 冷却板，所述冷却板适于固定到所述喷头电极组件的顶板的表面并且与所述顶板的表面热绝缘，并且冷却所述加热板并控制所述顶电极和所述加热板之间的热传导; 以及至少一个热扼流圈，适于控制加热器板和冷却板之间的热传导。

公开(公告)号：WO2007095388A3

公开(公告)日：2007-12-13

申请号：PCT/US2007004235

申请日：2007-02-15

Applicant: LAM RES CORP ,  DHINDSA RAJINDER

Inventor： DHINDSA RAJINDER

IPC: B08B6/00 ,  C25F1/00 ,  C25F3/30 ,  C25F5/00

CPC classification number: H01J37/321 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32642 ,  H01J37/32862

Abstract: Broadly speaking, the embodiments of the present invention provide an improved chamber cleaning mechanism, apparatus and method. The present invention can also be used to provide additional knobs to tune the etch processes. In one embodiment, a plasma processing chamber configured to generate a plasma includes a bottom electrode assembly with an inner bottom electrode and an outer bottom electrode disposed outside of the inner bottom electrode, wherein the inner bottom electrode is configured to receive a substrate. The plasma processing chamber also includes a top electrode assembly with a top electrode, wherein the top capacitive electrode is disposed directly above the inner and outer bottom electrodes.

Abstract translation: 广而言之，本发明的实施例提供了改进的腔室清洁机构，设备和方法。 本发明也可以用来提供额外的旋钮来调整蚀刻工艺。 在一个实施例中，配置成产生等离子体的等离子体处理室包括具有内部底部电极和设置在内部底部电极外部的外部底部电极的底部电极组件，其中内部底部电极配置为接收衬底。 等离子体处理室还包括具有顶部电极的顶部电极组件，其中顶部电容电极直接设置在内部和外部底部电极的上方。

公开(公告)号：WO2006101889A2

公开(公告)日：2006-09-28

申请号：PCT/US2006009300

申请日：2006-03-15

Applicant: LAM RES CORP ,  DHINDSA RAJINDER ,  KOZAKEVICH FELIX ,  ROGERS JAMES H ,  TRUSSELL DAVID

Inventor： DHINDSA RAJINDER ,  KOZAKEVICH FELIX ,  ROGERS JAMES H ,  TRUSSELL DAVID

IPC: C23C16/00

CPC classification number: H01J37/32623 ,  H01J37/32477 ,  Y10S156/914 ,  Y10S156/915

Abstract: Plasma confinement ring assemblies are provided that include confinement rings adapted to reach sufficiently high temperatures on plasma-exposed surfaces of the rings to avoid polymer deposition on those surfaces. The plasma confinement rings include thermal chokes adapted to localize heating at selected portions of the rings that include the plasma exposed surfaces. The thermal chokes reduce heat conduction from those portions to other portions of the rings, which causes selected portions of the rings to reach desired temperatures during plasma processing.

Abstract translation: 提供等离子体限制环组件，其包括适于在等离子体暴露的表面上达到足够高的温度的限制环，以避免聚合物沉积在这些表面上。 等离子体约束环包括适于在包括等离子体暴露表面的环的选定部分处定位加热的热扼流圈。 热扼流圈减少从这些部分到环的其他部分的热传导，这导致环的选定部分在等离子体处理期间达到期望的温度。

公开(公告)号：WO2013036371A2

公开(公告)日：2013-03-14

申请号：PCT/US2012051460

申请日：2012-08-17

Applicant: LAM RES CORP ,  MARAKHTANOV ALEXEI ,  DHINDSA RAJINDER ,  HUDSON ERIC ,  BAILEY III ANDREW D

Inventor： MARAKHTANOV ALEXEI ,  DHINDSA RAJINDER ,  HUDSON ERIC ,  BAILEY III ANDREW D

IPC: H01L21/3065 ,  C23F1/08 ,  H01L21/306

CPC classification number: H01J37/32146 ,  H01J37/32091 ,  H01J37/32825 ,  H01J2237/3341 ,  H01L21/31116 ,  H01L21/67069

Abstract: Systems, methods, and computer programs for processing a semiconductor substrate in a pulsed plasma chamber in a dual chamber configuration are provided. A wafer processing apparatus with a top chamber and a bottom chamber separated by a plate that fluidly connects the top chamber to the bottom chamber includes a continuous wave (CW) controller, a pulse controller, and a system controller. The CW controller is operable to set the voltage and the frequency for a first radio frequency (RF) power source coupled to a top electrode in the top chamber. The pulse controller is operable to set voltage, frequency, ON-period duration, and OFF-period duration for a pulsed RF signal generated by a second RF power source coupled to the bottom electrode in the bottom chamber. Further, the system controller is operable to set parameters for the CW controller and the pulse controller to regulate the flow of species from the top chamber to the bottom chamber through the plate during operation of the chamber. The flow of species assists in the negative-ion etching and in neutralizing excessive positive charge on the wafer surface during afterglow in the OFF period, and assists in the re- striking of the plasma in the bottom chamber during the ON period.

Abstract translation: 提供了用于在双室配置中处理脉冲等离子体室中的半导体衬底的系统，方法和计算机程序。 具有通过将顶部腔室与底部腔室流体连接的板分隔开的顶部腔室和底部腔室的晶片处理装置包括连续波（CW）控制器，脉冲控制器和系统控制器。 CW控制器可操作地设置耦合到顶部室中顶部电极的第一射频（RF）电源的电压和频率。 脉冲控制器可操作地为耦合到底部室中的底部电极的第二RF电源产生的脉冲RF信号设置电压，频率，接通周期持续时间和关闭周期持续时间。 此外，系统控制器可操作以设置CW控制器和脉冲控制器的参数，以调节在室的操作期间物种从顶室到底室通过板的流动。 物质的流动有助于负离子蚀刻，并且在关闭期间在余辉期间中和晶片表面上的过量正电荷，并且有助于在接通期间等离子体在底室中的重新打开。

公开(公告)号：WO2010117971A2

公开(公告)日：2010-10-14

申请号：PCT/US2010030021

申请日：2010-04-06

Applicant: LAM RES CORP ,  MARAKHTANOV ALEXEI ,  DHINDSA RAJINDER

Inventor： MARAKHTANOV ALEXEI ,  DHINDSA RAJINDER

IPC: H01L21/3065 ,  H05H1/24

CPC classification number: H01J37/32642 ,  H01J37/32422 ,  H01J37/32495 ,  H01J37/32623

Abstract: A wafer processing system is provided for use with a driver and a material supply source. The driver is operable to generate a driving signal. The material supply source is operable to provide a material. The wafer processing system includes an upper confinement chamber portion, a lower confinement chamber portion, a confinement ring, and an electro-static chuck. The upper confinement chamber portion has an upper confinement chamber portion inner surface. The lower confinement chamber portion is detachably disposed in contact with the upper confinement chamber portion. The lower confinement chamber portion has a lower confinement chamber portion inner surface. The confinement ring is removably disposed in contact with the upper confinement chamber portion inner surface and the lower confinement chamber portion inner surface. The confinement ring has a confinement ring inner surface. The electro-static chuck has an electro-static chuck upper surface and is arranged to receive the driving signal. The upper confinement chamber portion, the lower confinement chamber portion, the confinement ring and the electro-static chuck are arranged such that the upper confinement chamber portion inner surface, the lower confinement chamber portion inner surface, the confinement ring inner surface and the electro-static chuck upper surface surround a plasma-forming space that is capable of receiving the material. The upper confinement chamber portion, the lower confinement chamber portion, the confinement ring and the electro-static chuck are operable to transform the material into a plasma when the electro-static chuck receives the driving signal. The confinement ring has a non-rectangular cross section.

Abstract translation: 提供了与驱动器和材料供应源一起使用的晶片处理系统。 驱动器可操作以产生驱动信号。 材料供应源可操作以提供材料。 晶片处理系统包括上限制室部分，下限制室部分，限制环和静电卡盘。 上约束室部分具有上约束室部分内表面。 下部限制室部分可拆卸地设置成与上部限制室部分接触。 下部限制室部分具有下部限制室部分内表面。 限制环可拆卸地设置成与上部限制室部分内表面和下部限制室部分内表面接触。 限制环具有限制环内表面。 静电卡盘具有静电卡盘上表面，并被布置成接收驱动信号。 上部限制室部分，下部限制室部分，限制环和静电卡盘被布置成使得上部限制室部分内表面，下部限制室部分内表面，限制环内表面和电 - 静态卡盘上表面包围能够接收材料的等离子体形成空间。 当静电卡盘接收到驱动信号时，上部限制室部分，下部限制室部分，限制环和静电卡盘可操作以将材料转换成等离子体。 限制环具有非矩形截面。

公开(公告)号：WO2009114175A3

公开(公告)日：2009-12-23

申请号：PCT/US2009001593

申请日：2009-03-13

Applicant: LAM RES CORP ,  KELLOGG MICHAEL C ,  NORELL ANTHONY J ,  DE LA LIERA ANTHONY ,  DHINDSA RAJINDER

Inventor： KELLOGG MICHAEL C ,  NORELL ANTHONY J ,  DE LA LIERA ANTHONY ,  DHINDSA RAJINDER

IPC: H01L21/683 ,  H01L21/3065 ,  H01L21/687

CPC classification number: H01L21/68728 ,  H01L21/687 ,  Y10T403/7005 ,  Y10T403/7007 ,  Y10T403/7041

Abstract: A cam lock clamp comprises a stud having a substantially cylindrical body with a first end including a head area and a second end arranged to support one or more disc springs concentrically about the stud. A socket is arranged to mechanically couple concentrically around the stud with the head area of the stud being exposed above an uppermost portion of the socket. The socket is configured to be firmly attached to a consumable material. A camshaft has a substantially cylindrical body and is configured to mount within a bore of a backing plate. The camshaft further comprises an eccentric cutout area located in a central portion of the camshaft body. The camshaft is configured to engage and lock the head area of the stud when the consumable material and the backing plate are proximate to one another.

Abstract translation: 凸轮锁定夹具包括具有基本上圆柱形主体的螺柱，其具有包括头部区域的第一端和布置成围绕螺柱同心地支撑一个或多个盘簧的第二端。 插座布置成以同心的方式围绕螺柱共同连接，螺柱的头部区域暴露在插座的最上部分之上。 插座被配置为牢固地连接到消耗材料上。 凸轮轴具有基本上圆柱形的主体并被构造成安装在背板的孔内。 凸轮轴还包括位于凸轮轴主体的中心部分的偏心切口区域。 凸轮轴构造成当消耗材料和背板彼此靠近时接合并锁定螺柱的头部区域。

公开(公告)号：WO2007078572A3

公开(公告)日：2009-02-05

申请号：PCT/US2006046780

申请日：2006-12-08

Applicant: LAM RES CORP ,  DHINDSA RAJINDER ,  KOZAKEVICH FELIX ,  LI LUMIN ,  TRUSSELL DAVE

Inventor： DHINDSA RAJINDER ,  KOZAKEVICH FELIX ,  LI LUMIN ,  TRUSSELL DAVE

IPC: H01L21/683

CPC classification number: H01J37/32082 ,  H01J37/32174

Abstract: A number of RF power transmission paths are defined to extend from an RF power source through a matching network, through a transmit electrode, through a plasma to a number of return electrodes. A number of tuning elements are respectively disposed within the number of RF power transmission paths. Each tuning element is defined to adjust an amount of RF power to be transmitted through the RF power transmission path within which the tuning element is disposed. A plasma density within a vicinity of a particular RF power transmission path is directly proportional to the amount of RF power transmitted through the particular RF power transmission path. Therefore, adjustment of RF power transmitted through the RF power transmission paths, as afforded by the tuning element, enables control of a plasma density profile across a substrate.

Abstract translation: 多个RF功率传输路径被定义为从RF电源通过匹配网络，通过发射电极，等离子体延伸到多个返回电极。 多个调谐元件分别设置在RF功率传输路径的数量内。 每个调谐元件被定义为调整要通过设置调谐元件的RF功率传输路径传输的RF功率的量。 特定RF功率传输路径附近的等离子体密度与通过特定RF功率传输路径传输的RF功率的量成正比。 因此，由调谐元件提供的通过RF功率传输路径传输的RF功率的调整能够控制跨越衬底的等离子体密度分布。