公开(公告)号：WO2010080421A2

公开(公告)日：2010-07-15

申请号：PCT/US2009068186

申请日：2009-12-16

Applicant: LAM RES CORP ,  FISCHER ANDREAS ,  HUDSON ERIC

Inventor： FISCHER ANDREAS ,  HUDSON ERIC

IPC: H05H1/36 ,  H01L21/3065

CPC classification number: H01J37/32623 ,  H01J37/32091

Abstract: A plasma processing system for processing at least a substrate with plasma. The plasma processing chamber is capable of controlling ion energy distribution. The plasma processing system may include a first electrode. The plasma processing system also includes a second electrode that is different from the first electrode and is configured for bearing the substrate. The plasma processing system may also include a signal source coupled with the first electrode. The signal source may provide a non-sinusoidal signal through the first electrode to control ion energy distribution at the substrate when the substrate is processed in the plasma processing system, wherein the non-sinusoidal signal is periodic.

Abstract translation: 一种等离子体处理系统，用于至少用等离子体处理衬底。 等离子体处理室能够控制离子能量分布。 等离子体处理系统可以包括第一电极。 等离子体处理系统还包括与第一电极不同的第二电极，并且构造成用于承载衬底。 等离子体处理系统还可以包括与第一电极耦合的信号源。 当在等离子体处理系统中处理衬底时，信号源可以通过第一电极提供非正弦信号以控制衬底处的离子能量分布，其中非正弦信号是周期性的。

公开(公告)号：WO2007120994B1

公开(公告)日：2008-11-20

申请号：PCT/US2007063102

申请日：2007-03-01

Applicant: LAM RES CORP ,  FISCHER ANDREAS

Inventor： FISCHER ANDREAS

IPC: H01L21/302

CPC classification number: H01J37/32642 ,  C23C16/4404 ,  C23C16/5096 ,  H01J37/32623

Abstract: An apparatus for selectively pre-coating a plasma processing chamber, Including a chamber wall is disclosed. The apparatus includesa first set of RF electrodes, the first set of RF electrodes configured to strikea first pre-coat plasma, the first set of RF electrodes defining a first plasma chamber zone. The apparatus also includes a first set of conflnemenr rings disposed around the first set of RF electrodes; and a second set of confinement rings disposed between the Hrst set ofccnfinement rings and the chamber wall. The apparatus further includes a gas delivery system configured to apply a first pre-coat layer to the first phlsxna zone when a first pre-coat gas is delivered and the first set of RF electrodes is energized. The apparatus also includes the gas delivery system configured to apply a second pre-coat layer to the second plasma zone when a second pre-coat gas is delivered.

Abstract translation: 公开了一种用于选择性地预涂覆等离子体处理室的装置，包括室壁。 所述装置包括第一组RF电极，所述第一组RF电极被配置为冲击第一预涂层等离子体，所述第一组RF电极限定第一等离子体室区。 该装置还包括设置在第一组RF电极周围的第一组confnemenr环; 以及第二组限制环，其设置在第一组排气环和室壁之间。 所述装置还包括气体输送系统，其构造成当第一预包被气体被输送并且第一组RF电极通电时，将第一预涂层施加到第一phlsxna区。 该装置还包括气体输送系统，其构造成当第二预涂层气体被输送时，将第二预涂层施加到第二等离子体区。

公开(公告)号：WO2007149694A3

公开(公告)日：2008-03-20

申请号：PCT/US2007070265

申请日：2007-06-01

Applicant: LAM RES CORP ,  HUDSON ERIC ,  FISCHER ANDREAS

Inventor： HUDSON ERIC ,  FISCHER ANDREAS

IPC: C23C16/00

CPC classification number: H01J37/32862 ,  B08B7/0035 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32596

Abstract: An apparatus used for rapid removal of polymer films from plasma confinement rings while minimizing erosion of other plasma etch chamber components is disclosed. The apparatus includes a center assembly, an electrode plate, a confinement ring stack, a first plasma source, and a second plasma source. The electrode plate is affixed to a surface of the center assembly with a channel defined along the external circumference therein. A first plasma source is disposed within the channel and along the external circumference of the center assembly, wherein the first plasma source is configured to direct a plasma to the inner circumferential surface of the confinement ring stack. A second plasma source located away from the first plasma source is configured to perform processing operations on a substrate within the etch chamber.

Abstract translation: 公开了一种用于从等离子体限制环快速除去聚合物膜同时最小化其它等离子体蚀刻室部件的侵蚀的装置。 该装置包括中心组件，电极板，约束环叠层，第一等离子体源和第二等离子体源。 电极板被固定到中心组件的表面，其中沿着外圆周限定了通道。 第一等离子体源设置在通道内并且沿着中心组件的外圆周，其中第一等离子体源被配置为将等离子体引导到限制环堆叠的内圆周表面。 位于远离第一等离子体源的第二等离子体源被配置为在蚀刻室内的衬底上执行处理操作。

公开(公告)号：WO2007019049A3

公开(公告)日：2007-12-27

申请号：PCT/US2006028844

申请日：2006-07-24

Applicant: LAM RES CORP ,  CHANG JEREMY ,  FISCHER ANDREAS ,  KADKHODAYAN BABAK

Inventor： CHANG JEREMY ,  FISCHER ANDREAS ,  KADKHODAYAN BABAK

IPC: H01L21/306 ,  H01L21/302

CPC classification number: H01L21/467 ,  H01J37/32623 ,  Y10T29/4973

Abstract: An edge ring assembly surrounds a substrate support surface in a plasma etching chamber. The edge ring assembly comprises an edge ring and a dielectric spacer ring. The dielectric spacer ring, which surrounds the substrate support surface and which is surrounded by the edge ring in the radial direction, is configured to insulate the edge ring from the baseplate. Incorporation of the edge ring assembly around the substrate support surface can decrease the buildup of polymer at the underside and along the edge of a substrate and increase plasma etching uniformity of the substrate.

Abstract translation: 边缘环组件围绕等离子体蚀刻室中的衬底支撑表面。 边缘环组件包括边缘环和介电间隔环。 围绕基板支撑表面并且在径向方向上被边缘环围绕的电介质间隔环被配置为使边缘环与基板隔离。 将边缘环组件结合在衬底支撑表面周围可以减少聚合物在衬底的下侧和沿着衬底的边缘的堆积并且增加衬底的等离子体刻蚀均匀性。

公开(公告)号：WO2007145801A2

公开(公告)日：2007-12-21

申请号：PCT/US2007012581

申请日：2007-05-25

Applicant: LAM RES CORP ,  KEIL DOUGLAS ,  HUDSON ERIC ,  KIMBALL CHRIS ,  FISCHER ANDREAS

Inventor： KEIL DOUGLAS ,  HUDSON ERIC ,  KIMBALL CHRIS ,  FISCHER ANDREAS

IPC: C23C14/00

CPC classification number: C23C16/52 ,  C23C16/509 ,  H01J37/32935 ,  H01J37/3299

Abstract: A method of fault detection for use in a plasma processing chamber is provided. The method comprises monitoring plasma parameters within a plasma chamber and analyzing the resulting information. Such analysis enables detection of failures and the diagnosis of failure modes in a plasma processing reactor during the course of wafer processing. The method comprises measuring the plasma parameters as a function of time and analyzing the resulting data. The data can be observed, characterized, compared with reference data, digitized, processed, or analyzed in any way to reveal a specific fault. Monitoring can be done with a detector such as a probe, which is preferably maintained within the plasma chamber substantively coplanar with a surface within the chamber, and directly measures net ion flux and other plasma parameters. The detector is preferably positioned at a grounded surface within the reactor such as a grounded showerhead electrode, and can be of a planar ion flux probe (PIF) type or a non-capacitive type. Chamber faults that can be detected include a build-up of process by-products in the process chamber, a helium leak, a match re-tuning event, a poor stabilization rate, and a loss of plasma confinement. If the detector is a probe, the probe can be embedded in a part of a plasma processing chamber and can comprises one or more gas feed-through holes.

Abstract translation: 提供了一种用于等离子体处理室的故障检测方法。 该方法包括监测等离子体室内的等离子体参数并分析所得到的信息。 这样的分析使得能够在晶片处理过程中检测等离子体处理反应器中的故障和故障模式的诊断。 该方法包括测量作为时间的函数的等离子体参数并分析所得到的数据。 数据可以观察，表征，与参考数据进行比较，数字化，处理或分析，以显示特定故障。 可以用诸如探针的检测器进行监测，该探针优选地保持在与腔室内的表面基本上共面的等离子体室内，并且直接测量净离子通量和其它等离子体参数。 检测器优选地位于反应器内的接地表面，例如接地喷头电极，并且可以是平面离子通量探针（PIF）型或非电容型。 可以检测到的室内故障包括处理室中的过程副产物的积聚，氦泄漏，匹配重新调谐事件，差的稳定化速率和等离子体约束的损失。 如果检测器是探针，则探针可以嵌入在等离子体处理室的一部分中，并且可以包括一个或多个气体馈通孔。

公开(公告)号：JP2012054594A

公开(公告)日：2012-03-15

申请号：JP2011242761

申请日：2011-11-04

Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： FISCHER ANDREAS

IPC: H01L21/683 ,  H01L21/3065

CPC classification number: C03C15/00 ,  C03C17/23 ,  C03C2217/213 ,  C03C2218/33 ,  H01J2237/2001 ,  H01L21/31116 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/68742 ,  H01L21/6875 ,  H01L21/68778

Abstract: PROBLEM TO BE SOLVED: To provide a plasma processing system and a method for processing a substrate using a heat transfer system.SOLUTION: A heat transfer system 118, which is capable of producing a high degree of processing uniformity across the surface of a substrate 110, comprises a uniformity pedestal 112 supported on and in good thermal contact with a heat transfer member 114. The uniformity pedestal 112 includes a pin array which provides a suitable substrate support surface (i.e., contact surface) that can conform to the profile of a backside surface of the substrate 110 during processing. To uniformly cool the substrate 110, a large thermal gradient can be established between the uniformity pedestal 112 and the heat transfer member 114 during the processing of the substrate 110.

Abstract translation: 要解决的问题：提供等离子体处理系统和使用传热系统处理衬底的方法。 解决方案：能够在衬底110的表面上产生高度的加工均匀性的传热系统118包括在热传递构件114上支撑并且与热传递构件114良好热接触的均匀性基座112。 均匀性基座112包括针阵列，其在处理期间提供适合于衬底110的背面的轮廓的合适的衬底支撑表面（即，接触表面）。 为了均匀地冷却基板110，可以在基板110的加工期间在均匀性台座112和传热构件114之间建立大的热梯度。（C）2012年，JPO和INPIT

公开(公告)号：WO2010071785A3

公开(公告)日：2010-10-14

申请号：PCT/US2009068195

申请日：2009-12-16

Applicant: LAM RES CORP ,  HUDSON ERIC ,  FISCHER ANDREAS

Inventor： HUDSON ERIC ,  FISCHER ANDREAS

IPC: H05H1/24 ,  H05H1/34

CPC classification number: C23C16/00 ,  C23F1/00 ,  H01J37/32082 ,  H01J37/32623

Abstract: A movable plasma confinement structure configured for confining plasma in a plasma processing chamber during plasma processing of a substrate is provided. The movable plasma confinement structure includes a movable plasma-facing structure configured to surround the plasma. The movable plasma confinement structure also includes a movable electrically conductive structure disposed outside of the movable plasma-facing structure and configured to be deployed and retracted with the movable plasma-facing structure as a single unit to facilitate handling of the substrate. The movable electrically conductive structure is radio frequency (RF) grounded during the plasma processing. The movable plasma-facing structure is disposed between the plasma and the movable electrically conductive structure during the plasma processing such that RF current from the plasma flows to the movable electrically conductive structure through the movable plasma-facing structure during the plasma processing.

Abstract translation: 提供了一种可移动的等离子体约束结构，其被配置用于在等离子体处理基板期间将等离子体限制在等离子体处理室中。 可移动的等离子体约束结构包括构造成围绕等离子体的可移动的面向等离子体的结构。 可移动的等离子体约束结构还包括可移动的导电结构，该可移动的导电结构布置在可移动的面向等离子体的结构的外部并且被配置为与可移动的面向等离子体的结构一起作为单个单元展开和缩回以便于处理基板。 可移动导电结构在等离子体处理期间是射频（RF）接地。 在等离子体处理期间，可移动的面向等离子体的结构设置在等离子体和可移动的导电结构之间，使得来自等离子体的RF电流在等离子体处理期间通过可移动的面向等离子体的结构流向可移动的导电结构。

公开(公告)号：WO2010080423A3

公开(公告)日：2010-09-02

申请号：PCT/US2009068189

申请日：2009-12-16

Applicant: LAM RES CORP ,  FISCHER ANDREAS ,  KOSHIISHI AKIRA

Inventor： FISCHER ANDREAS ,  KOSHIISHI AKIRA

IPC: H05H1/34 ,  H01L21/3065

CPC classification number: H01J37/32642 ,  H01J37/32449 ,  H01J37/32623

Abstract: A combined pressure control/plasma confinement assembly configured for confining a plasma and for at least partially regulating pressure in a plasma processing chamber during plasma processing of a substrate is provided. The assembly includes a movable plasma confinement structure having therein a plurality of perforations and configured to surround the plasma when deployed. The assembly also includes a movable pressure control structure disposed outside of the movable plasma confinement structure such that the movable plasma confinement structure is disposed between the plasma and the movable pressure control structure during the plasma processing, the movable pressure control structure being deployable and retractable along with the movable plasma confinement structure to facilitate handling of the substrate, the movable pressure control structure being independently movable relative to the movable plasma confinement structure to regulate the pressure by blocking at least a portion of the plurality of perforations.

Abstract translation: 提供了一种组合式压力控制/等离子体约束组件，其被配置用于在等离子体处理基板期间约束等离子体并且用于至少部分地调节等离子体处理室中的压力。 该组件包括可移动的等离子体约束结构，其中具有多个穿孔并且被配置为当展开时围绕等离子体。 该组件还包括设置在可移动的等离子体约束结构外部的可移动的压力控制结构，使得可移动的等离子体约束结构在等离子体处理期间设置在等离子体和可移动的压力控制结构之间，可移动的压力控制结构沿着等离子体 利用可移动等离子体约束结构来促进基板的处理，可移动压力控制结构相对于可移动等离子体约束结构可独立地移动，以通过阻挡多个穿孔的至少一部分来调节压力。

公开(公告)号：WO2010080420A2

公开(公告)日：2010-07-15

申请号：PCT/US2009068183

申请日：2009-12-16

Applicant: LAM RES CORP ,  FISCHER ANDREAS ,  HUDSON ERIC

Inventor： FISCHER ANDREAS ,  HUDSON ERIC

IPC: H05H1/34

CPC classification number: H01J37/32091 ,  H01J37/32449 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/32816 ,  H01J37/3299 ,  H01L21/3065

Abstract: A plasma processing system having a plasma processing chamber configured for processing a substrate is provided. The plasma processing system includes at least an upper electrode and a lower electrode for processing the substrate. The substrate is disposed on the lower electrode during plasma processing, where the upper electrode and the substrate forms a first gap. The plasma processing system also includes an upper electrode peripheral extension (UE-PE). The UE-PE is mechanically coupled to a periphery of the upper electrode, where the UE-PE is configured to be non-coplanar with the upper electrode. The plasma processing system further includes a cover ring. The cover ring is configured to concentrically surround the lower electrode, where the UE-PE and the cover ring forms a second gap.

Abstract translation: 提供了一种等离子体处理系统，具有配置用于处理基板的等离子体处理室。 等离子体处理系统至少包括用于处理基板的上电极和下电极。 在等离子体处理期间，衬底布置在下电极上，其中上电极和衬底形成第一间隙。 等离子体处理系统还包括上电极外围扩展（UE-PE）。 UE-PE机械耦合到上电极的外围，其中UE-PE被配置为与上电极不共面。 等离子体处理系统还包括盖环。 覆盖环配置成同心地围绕下电极，其中UE-PE和覆盖环形成第二间隙。

公开(公告)号：WO2010045513A3

公开(公告)日：2010-07-15

申请号：PCT/US2009060931

申请日：2009-10-16

Applicant: LAM RES CORP ,  FISCHER ANDREAS ,  MORAVEJ MARYAM

Inventor： FISCHER ANDREAS ,  MORAVEJ MARYAM

IPC: H01L21/3065

CPC classification number: C23C16/04 ,  C23C16/509 ,  H01J37/32091 ,  H01J37/32862 ,  H01L21/67028 ,  H01L21/6833

Abstract: In a wafer processing system having an electrode, an electrostatic chuck (ESC) and a confinement chamber portion, the ESC is established to be RF-floating, whereas a confinement chamber portion is grounded during a pre-coating process. Accordingly, the confinement chamber portion and the upper electrode are selectively targeted for pre-coating material deposition. As such, the amount of pre-coating material that is deposited onto the ESC is greatly reduced over that of conventional systems. Therefore, less time, energy and material are needed to remove pre-coating material from the ESC during a wafer auto clean (WAC) process. Further, the upper electrode is established to be RF-floating, whereas the confinement chamber portion is grounded during a WAC process. As such, the cleaning material is selectively targeted toward the confinement hardware portion of the chamber. Therefore, the upper electrode is subjected to less wear during a WAC process.

Abstract translation: 在具有电极，静电卡盘（ESC）和约束室部分的晶片处理系统中，ESC被建立为RF浮动，而限制室部分在预涂工艺期间接地。 因此，限制室部分和上部电极被选择性地靶向用于预涂材料沉积。 因此，与常规系统相比，沉积在ESC上的预涂料的量大大降低。 因此，在晶圆自动清洗（WAC）过程中，需要较少的时间，能量和材料来从ESC中去除预涂材料。 此外，上电极被建立为RF浮动，而限制室部分在WAC处理期间接地。 因此，清洁材料选择性地朝向腔室的限制硬件部分。 因此，在WAC工艺期间，上电极受到较少的磨损。