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    31.
    发明专利
    未知

    公开(公告)号：DE3871846T2

    公开(公告)日：1993-02-04

    申请号：DE3871846

    申请日：1988-03-30

    Applicant: SGS THOMSON MICROELECTRONICS

    Inventor： MAGGIONI GIAMPIETRO ,  MARCHIO' FABIO ,  MORELLI MARCO ,  TRICOLI FRANCESCO

    IPC: H03K17/16 ,  H03K17/082 ,  H03K17/64 ,  H03K17/08

    Abstract: A circuit for recirculating an inductive load's (L) discharge current through the driving power switching transistor (Tpw) utilizes a control transistor (Tc) of opposite polarity to that of the power transistor and capable of withstanding a minimum fraction (1/ ) of the discharge current. The circuit has the advantage of allowing recirculation of current with a fixed overvoltage independently of the value of the supply voltage, without requiring additional power devices. The circuit may also be provided with means (D1, D2 and DZ1) to turn-on the control transistor in presence of concomitant supply overvoltages to protect the power device also from dumping effects.

    32.
    发明专利
    未知

    公开(公告)号：DE3871846D1

    公开(公告)日：1992-07-16

    申请号：DE3871846

    申请日：1988-03-30

    Applicant: SGS THOMSON MICROELECTRONICS

    Inventor： MAGGIONI GIAMPIETRO ,  MARCHIO' FABIO ,  MORELLI MARCO ,  TRICOLI FRANCESCO

    IPC: H03K17/16 ,  H03K17/082 ,  H03K17/64 ,  H03K17/08

    Abstract: A circuit for recirculating an inductive load's (L) discharge current through the driving power switching transistor (Tpw) utilizes a control transistor (Tc) of opposite polarity to that of the power transistor and capable of withstanding a minimum fraction (1/ ) of the discharge current. The circuit has the advantage of allowing recirculation of current with a fixed overvoltage independently of the value of the supply voltage, without requiring additional power devices. The circuit may also be provided with means (D1, D2 and DZ1) to turn-on the control transistor in presence of concomitant supply overvoltages to protect the power device also from dumping effects.

    35.
    发明专利
    未知

    公开(公告)号：DE69219975D1

    公开(公告)日：1997-07-03

    申请号：DE69219975

    申请日：1992-09-17

    Applicant: SGS THOMSON MICROELECTRONICS

    Inventor： PELLEGRINI FRANCO ,  MORELLI MARCO ,  CANCLINI ATHOS

    IPC: H01L27/04 ,  H01L21/822 ,  H01L27/02 ,  H01L27/06 ,  H01L29/78 ,  H03K17/08 ,  H03K19/003

    Abstract: In an anti-ESD protective structure, especially designed for pins destined to reach below ground and/or above supply voltages, includes a pair of Zener diodes or lateral NPN structures with a resistive connection between base and emitter, connected in opposition among each other between the pin to be protected and a grounded substrate of the integrated circuit. An amplifying effect on the leakage current which is drawn/injected through the pin by the protective structure caused by the triggering of an intrinsic parasitic transistor is effectively eliminated by connecting a biasing element, such as a forward biased junction, between the node of interconnection between the two Zener orlateral NPN structures and a node of the integrated circuit biased with a voltage sufficiently high as to ensure, under any condition, a reverse biasing of the base-emitter junction of the parasitic transistor.

    36.
    发明专利
    未知

    公开(公告)号：DE69309667D1

    公开(公告)日：1997-05-15

    申请号：DE69309667

    申请日：1993-06-25

    Applicant: SGS THOMSON MICROELECTRONICS

    Inventor： MAGGIONI GIAMPIETRO ,  MORELLI MARCO

    IPC: H02J7/24 ,  H02P9/08 ,  H02P9/30

    Abstract: The contrasting requirements of low power consumption during operation and ability to function under drastic drops of the supply voltage at start-up of output power stages of an electric system of self-generation and recharge of a storage battery, are satisfied by an output power driving stage composed of a bipolar transistor and a field effect transistor, functionally connected in parallel to each other and having independent control terminals. A control signal is selectably switched either to the base of the bipolar output transistor or to the gate of the field effect output transistor, depending on the level of the supply voltage. A comparator comparing the voltage present on the supply node with a reference voltage controls a selection switch. The low threshold of the bipolar transistor ensures functioning at start-up, while the field effect transistor provides a low power consumption during normal running conditions.

    37.
    发明专利
    未知

    公开(公告)号：DE68922449T2

    公开(公告)日：1996-02-22

    申请号：DE68922449

    申请日：1989-08-24

    Applicant: SGS THOMSON MICROELECTRONICS

    Inventor： MENEGOLI PAOLO ,  MORELLI MARCO ,  TRICOLI FRANCESCO

    IPC: H03K3/286 ,  H03K3/289 ,  H03K23/00

    Abstract: The cell comprises: a power supply (A1, D4, R9); a control transistor pair (Q2, Q3) and a storage transistor pair (Q4, Q5), each having a collector, an emitter and a base electrode, all of the collector electrodes being coupled to said current source, the emitter electrodes of the storage transistors being grounded and the emitter electrodes of the control transistors being coupled to the base electrodes of the storage transistors, the control transistor collector and base electrodes being cross- coupled and the storage transistor collector and base electrodes also being cross-coupled; respective resistors (R5, R6) coupling each the emitter electrode of a driving transistor with the collector electrode of a storage transistor; two diodes (D1, D2) back to back series coupled between the driving transistor collector electrodes; a control transistor (Q1) having a grounded emitter electrode, a collector electrode coupled to the common coupling point of the two diodes, and a base electrode operating as an input pin of the frequency divider cell.

    38.
    发明专利
    未知

    公开(公告)号：DE68922449D1

    公开(公告)日：1995-06-08

    申请号：DE68922449

    申请日：1989-08-24

    Applicant: SGS THOMSON MICROELECTRONICS

    Inventor： MENEGOLI PAOLO ,  MORELLI MARCO ,  TRICOLI FRANCESCO

    IPC: H03K3/286 ,  H03K3/289 ,  H03K23/00

    Abstract: The cell comprises: a power supply (A1, D4, R9); a control transistor pair (Q2, Q3) and a storage transistor pair (Q4, Q5), each having a collector, an emitter and a base electrode, all of the collector electrodes being coupled to said current source, the emitter electrodes of the storage transistors being grounded and the emitter electrodes of the control transistors being coupled to the base electrodes of the storage transistors, the control transistor collector and base electrodes being cross- coupled and the storage transistor collector and base electrodes also being cross-coupled; respective resistors (R5, R6) coupling each the emitter electrode of a driving transistor with the collector electrode of a storage transistor; two diodes (D1, D2) back to back series coupled between the driving transistor collector electrodes; a control transistor (Q1) having a grounded emitter electrode, a collector electrode coupled to the common coupling point of the two diodes, and a base electrode operating as an input pin of the frequency divider cell.

    40.
    发明专利
    未知

    公开(公告)号：DE68914948D1

    公开(公告)日：1994-06-01

    申请号：DE68914948

    申请日：1989-11-14

    Applicant: SGS THOMSON MICROELECTRONICS

    Inventor： BRAMBILLA MASSIMILIANO ,  MORELLI MARCO ,  MAGGIONI GIAMPIETRO ,  MENEGOLI PAOLO

    IPC: H01L27/04 ,  G05F3/30 ,  H01L21/822

    Abstract: This voltage reference circuit has high thermal stability and minimal bulk and comprises a transistor (Q2) defining a base-emitter junction having a voltage drop (VBE) which varies in a non-linear manner as a function of temperature and resistors (R2a-R2c) connected in series to the junction, the junction and the resistors being interposed between a ground line and the output terminal. A compensation transistor (QR) generates a compensation current which varies as a function of temperature so as to produce a voltage drop with a behavior substantially opposite to the previous voltage drop upon reaching the switching on temperature of the transistor.

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