-
公开(公告)号：JPH1123398A
公开(公告)日：1999-01-29
申请号：JP17495397
申请日：1997-06-30
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： AWAI TAKAYOSHI
Abstract: PROBLEM TO BE SOLVED: To obtain a miniature pressure sensor having an orientation measuring function by bonding a silicon chip having a diaphragm structure to a glass base and arranging a Hall element on the diaphragm and the glass base. SOLUTION: A silicon chip 1 is set on a glass base 2 and a diaphragm 11 is formed thereon. A movable electrode 3 is arranged on the lower surface of the diaphragm 11 and a fixed electrode 4 is arranged on the upper surface of the glass base 2. A pressure is detected based on the variation of capacitance between both electrodes 3, 4 caused by pressure distortion of the diaphragm 11. Furthermore, a Hall element 5 is formed on the upper surface of the diaphragm 11 by depositing indium antimony, for example. An orientation is detected based on a Hall voltage being generated between the output terminals when a voltage is applied to the input terminal of the Hall element 5. Since the Hall element 5 is formed vertically to the movable and fixed electrodes 3, 4 of the pressure sensor on the upper surface of the diaphragm 11, it is not required to form the pressure sensor and the Hall element individually on a substrate.
-
公开(公告)号：JPH10160608A
公开(公告)日：1998-06-19
申请号：JP31891396
申请日：1996-11-29
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： AWAI TAKAYOSHI , YAMAGUCHI SHUICHIRO
Abstract: PROBLEM TO BE SOLVED: To improve the detection accuracy of pressure change without making a device large. SOLUTION: This pressure sensor is provided with a pressure sensor chip 1 made of single crystal silicon in which a diaphragm 1d is of plane parallelogram having two pairs of first and second opposite angles ϕ and θ and is formed thin partly by providing a recessed part 1c and its surface is of (110) plane, and the sensor detects a change in pressure according to the amount of strain of the diaphragm 1d. In this case, the first and second opposite angles ϕand θ are set to 2×tan 2 and 2×tan (1/2 ) respectively, and the inner wall surface of the recessed part 1c is of (111) plane.
-
公开(公告)号：JPH10104261A
公开(公告)日：1998-04-24
申请号：JP25456996
申请日：1996-09-26
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： AWAI TAKAYOSHI
Abstract: PROBLEM TO BE SOLVED: To provide a highly sensitive sensor by providing a weight part formed of a first weight part formed by etching and a second weight part formed by accumulation. SOLUTION: A weight part is formed of a first weight part 13a and a second weight part 13b. The weight part 13a is formed by etching, for example, a silicon substrate 1300μm in thickness from the reverse side. The weight part 13b is formed by being accumulated on the silicon base 1. The weight parts 13a, 13b are supported by a support part 11 through a beam part 12. The support part 11 is fixed to a pedestal 2. Since the weight part has a large mass according such a structure, a force proportional to the mass is added to increase the distortion of the beam 12 when an acceleration is applied, and the resistance change detected by a strain gauge on the beam part 12 is thus also increased. Therefore, a highly sensitive acceleration sensor can be provided without minimizing the width of the beam part 12 or thinning it.
-
公开(公告)号：JPH09292297A
公开(公告)日：1997-11-11
申请号：JP10987696
申请日：1996-04-30
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： AWAI TAKAYOSHI
Abstract: PROBLEM TO BE SOLVED: To provide a pressure sensor improved in pressure sensitivity and a method of manufacturing it. SOLUTION: A monocrystal silicon base 1 is anisotropically etched from the reverse side, whereby recessed parts are formed on the center part to form a diaphragm 1a and a support part 1b. A strain gauge 2a is formed on the surface side of the diaphragm 1a, an electrode wiring 3a is formed on the terminal part of each strain gauge 2a, an electrode pad 4a is formed on the electrode wiring 3a, and the strain gauge 2a constitutes a Wheatstone bridge by the electrode wiring 4a. A strain gauge 2b for detecting the distortion of the diaphragm 1a by pressure is formed on the reverse side of the diaphragm 1a of the monocrystal silicone base 1, an electrode wiring 3b is formed on the terminal part of each strain gauge 2b, an electrode pad 4b is formed on the electrode wiring 3b, and the strain gauge 2b constitutes a Wheatstone bridge by the electrode wiring 3b. The strain gauges 2a, 2b formed on the surface side and reverse side of the diaphragm 1a are arranged so as to be substantially opposed to each other.
-
公开(公告)号：JPH09126922A
公开(公告)日：1997-05-16
申请号：JP28267695
申请日：1995-10-31
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： AWAI TAKAYOSHI
Abstract: PROBLEM TO BE SOLVED: To provide a pressure sensor with improved pressure sensitivity. SOLUTION: Boron is diffused onto 300μm thick (110) silicon substrate 1 by thermal diffusion to form a piezo resistance element 3. Then, an electrode wire 4 made from diffusion resistance is formed in the similar manner as the piezo resistance element 3 is formed. Then, an aluminum layer is formed on the (110) silicon substrate 1 by the electron beam deposition method and the aluminum layer is patterned in a specific shape by the photolithography process to form an electrode pad 5. Finally, anisotropic etching is performed from the reverse side of the (110) silicon substrate 1 to form a diaphragm 1a, where the piezo resistance element 3 is arranged in nearly the same direction as the (111) shaft of the (110) silicon substrate 1 to improve pressure sensitivity.
-
Patent Agency Ranking
公开(公告)号：JPH0894433A
公开(公告)日：1996-04-12
申请号：JP22999094
申请日：1994-09-26
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： AWAI TAKAYOSHI , KAKINOTE KEIJI , TOMONARI SHIGEAKI , NAKAMURA TAKURO , ISHIDA TAKUO , YOSHIDA HITOSHI
Abstract: PURPOSE: To reduce the noise of an infrared detection element and to enhance its sensitivity. CONSTITUTION: An infrared detection element is provided with a substrate 10, with a heat-insulating film 11 which covers an opening 10b in a hollow part 10a and whose peripheral part is supported by the substrate 10 and with an infrared detection part 12 which is formed on the heat-insulating film 11, and the infrared detection part 12 is provided with a thermistor 13 and with a lower-part electrode 14 and an upper-part electrode 15 which are connected to the thermistor 13. In the infrared detection element, the lower-part electrode 14 and the upper-part electrode 15 are constituted of polysilicon. Consequently, since a Schottky barrier is not generated in the junction of the thermistor 13 with the electrodes, a noise can be reduced. In addition, infrared rays are transmitted through the polysilicon, the infrared rays can be absorbed not only by an infrared absorption film 18 but also by the thermistor 13, so that the sensitivity of the infrared detection element is enhanced.
-
公开(公告)号：JPH07234159A
公开(公告)日：1995-09-05
申请号：JP2505194
申请日：1994-02-23
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： ISHIDA TAKUO , SAKAI ATSUSHI , AIZAWA KOICHI , AWAI TAKAYOSHI
Abstract: PURPOSE:To easily discriminate an infrared detection element of good quality. CONSTITUTION:In a method for producing an infrared detection element by connecting a plurality of infrared detection parts A on a substrate to form a bridge circuit C and providing electrode terminals 8, 10, at least one of the wirings 9 connecting the infrared detection parts A is formed from the same material as the electrode terminals 8, 10 to form the bridge circuit C on the substrate.
-
公开(公告)号：JPH07128150A
公开(公告)日：1995-05-19
申请号：JP27277193
申请日：1993-10-29
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： ISHIDA TAKUO , SAKAI ATSUSHI , AIZAWA KOICHI , AWAI TAKAYOSHI , KAKINOTE KEIJI
Abstract: PURPOSE:To manufacture an infrared detector in which resistance values of detector elements are uniform and whose accuracy is high by a method wherein an upper electrode is worked and the opposite area between the upper electrode and a lower electrode is changed to a direction in which an irregularity between the detection parts is eliminated. CONSTITUTION:An insulating film 12 which is composed of silicon nitride or the like is formed on one face of a silicon substrate 11, and a thin film which is composed of silicon nitride is formed on its opposite face. A chromium layer is etched on the film 12, a lower electrode 15 is formed, an amorphous silicon layer is etched on it, and a thin-film resistor 14 is formed. In addition, an upper electrode 15 is formed of chromium on the resistor 14. Then, a silicon oxide layer is etched on the resistor 14 and the electrode 15, an infrared absorption layer 17 is formed, an aluminum layer is etched on the electrode 15, and electrode terminals 16 are formed. At this time, in a detector in which an irregularity in resistance values of four elements (a) which form a bridge circuit is at + or -2% or higher after the resistance values of the detector elements (a) have been measured, a part of the upper electrode film is cut by a laser, the opposite area between the upper and lower electrodes is adjusted, the irregularity is eliminated, and the respective resistance values are made uniform.
-
公开(公告)号：JPH07120307A
公开(公告)日：1995-05-12
申请号：JP26685093
申请日：1993-10-26
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： AWAI TAKAYOSHI , SAKAI ATSUSHI , AIZAWA KOICHI , ISHIDA TAKUO , NAKAMURA TAKURO
Abstract: PURPOSE:To achieve reduction of the cost and the number of processes by forming a filter layer on an infrared absorption film using a semiconductor process. CONSTITUTION:This device is made up of a substrate 1 having a hollow part 1a, a heat insulating film 2 which covers the hollow part 1a and the perimeter thereof is supported on the substrate 1 and an infrared detection part 7 provided on the heat insulating film 2. The infrared detection part 7 is provided with a filter layer 13 having desired infrared transmitting characteristic at an upper part of an infrared absorption film 6 in an infrared detector including a thermistor 5, a pair of electrodes (lower electrode 3 and upper electrode 4) connected to the thermistor 5 and the infrared absorption film 6.
-
公开(公告)号：JPH06129898A
公开(公告)日：1994-05-13
申请号：JP27757592
申请日：1992-10-15
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： SAKAI ATSUSHI , AIZAWA KOICHI , AWAI TAKAYOSHI , ISHIDA TAKUO , KAKINOTE KEIJI , HIMESAWA HIDEKAZU , KAMIYA FUMIHIRO
Abstract: PURPOSE:To remarkably improve the infrared-ray detecting sensitivity of an infrared-ray sensor using a thin film resistor and provide an infrared-ray sensor to be used suitably for a wide range of purposes. CONSTITUTION:Regarding an infrared-ray sensor which is provided with an infrared-ray detecting part on a thermal insulator film 20 supported above a substrate 10 in hollow state and in which the substrate 10 is sealed in a package, wherein the infrared-ray detecting part consists of a resistor layer 40 having a pair of electrodes 30, 30, the inside of the package is kept in a decreased pressure as low as 1Torr, so that thermal condition to the structural part of the package from the infrared-ray detecting part through the ambient gas is prevented and the sensitivity of the infrared-ray sensor is improved.
-
-
-
-
-
-
-
-
-
Search Results
58
records
(took 0.026 seconds)
