公开(公告)号：FR2842830A1

公开(公告)日：2004-01-30

申请号：FR0209459

申请日：2002-07-25

Applicant: MEMSCAP

Inventor： GIRARDIE LIONEL

IPC: H01L21/02 ,  H01L21/28 ,  H01L21/316 ,  H01L29/51 ,  C23C16/40 ,  B32B18/00

Abstract: High permittivity multilayer structure comprises a number of superposed layers, each of thickness less than 500 Å. The layer structure includes two layers based on a mixed oxide derived from titanium oxide (TiO 2) and tantalum pentoxide (Ta 2O 5) separated by a layer based on a mixed oxide derived from at least hafnium dioxide (HfO 2) and alumina (Al 2O 3). Preferred Features: The mixed oxide derived from at least hafnium dioxide (HfO2) and alumina (Al2O3) can also include zirconium dioxide (ZrO 2) in its composition. At least one layer situated between the layers of mixed oxide derived from titanium oxide and tantalum pentoxide and the outer part of the structure comprises a mixed oxide derived from at least two materials selected from hafnium dioxide (HfO 2), alumina (Al 2O 3), zirconium oxide (ZrO 2), titanium dioxide (TiO 2), and tantalum pentoxide (Ta 2O 5). The thickness of each layer is 1-200 Å, preferably 1-100 Å, and most preferably 1-50 Å. At least one of the external layers is alumina (Al 2O 3). Each layer is deposited by atomic layer deposition (ALD).

公开(公告)号：FR2842829A1

公开(公告)日：2004-01-30

申请号：FR0209458

申请日：2002-07-25

Applicant: MEMSCAP

Inventor： GIRARDIE LIONEL

IPC: C23C16/40 ,  H01L21/28 ,  H01L29/51 ,  B32B18/00

Abstract: A multilayer structure with strong relative permittivity is made up of a number of distinct layers each with a thickness of less than 500 Angstrom and made from a base of hafnium dioxide, zirconium dioxide and alumina. The hafnium dioxide, zirconium dioxide and alumina are formed from alloys with the formula Hf xZr tAl y) zand their stoichiometry varies from layer to layer. The structure is made up of at least five layers and at least one of the outer layers is made up of alumina. The layers are deposited by atomic layer deposition.

公开(公告)号：FR2837623A1

公开(公告)日：2003-09-26

申请号：FR0203444

申请日：2002-03-20

Applicant: MEMSCAP

Inventor： GIRARDIE LIONEL

IPC: C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01L21/28 ,  H01L21/316 ,  H01L29/51 ,  H01L29/92 ,  H01G4/002

Abstract: A multilayer structure with strong relative permittivity is made up of a number of distinct layers each with a thickness of less than 500 Angstrom and made from a base of hafnium dioxide, zirconium dioxide and alumina. The hafnium dioxide, zirconium dioxide and alumina are formed from alloys with the formula HfxZrtAly)z and their stoichiometry varies from layer to layer. The structure is made up of at least five layers and at least one of the outer layers is made up of alumina. The layers are deposited by atomic layer deposition.

公开(公告)号：CA2420308A1

公开(公告)日：2003-08-27

申请号：CA2420308

申请日：2003-02-25

Applicant: MEMSCAP

Inventor： GIRARDIE LIONEL

IPC: H01L27/04 ,  C23C16/40 ,  C23C16/44 ,  H01L21/28 ,  H01L21/316 ,  H01L21/822 ,  H01L29/51 ,  H01L27/00 ,  H01L21/71

Abstract: Micro-composant électronique (1) réalisé à partir d'un substrat (2), et incorporant une structure capacitive réalisée au-dessus du dernier niveau de métallisati on (3) apparent réalisé dans le substrat, ladite structure capacitive comportant de ux électrodes (31,45), caractérisé en ce qu'une des électrodes (31) comporte un ensemble de lamelles (25,26) superposées et décalées de l'une à l'autre par rapport à un tronc central (27), l'autre électrode (45) comportant deux ensembles de lamelles (40,41), les lamelles (40,41) de chacun de ces ensembles étant intercalées entre les lamelles (25,26) de la première électrode (31) en étant reliées entre elles par une paroi commune (42,43), les deux parois commune (42,43) étant elles- mêmes reliées (44) par dessus la première électrode (31).

公开(公告)号：FR2832852A1

公开(公告)日：2003-05-30

申请号：FR0115456

申请日：2001-11-29

Applicant: MEMSCAP

Inventor： GIRARDIE LIONEL ,  DAVID JEAN BAPTISTE

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/288 ,  H01L21/3205 ,  H01L21/822 ,  H01L23/12 ,  H01L23/15 ,  H01L23/52 ,  H01L23/522 ,  H01L27/04 ,  H01L27/08 ,  H01F17/00

Abstract: Electronic component incorporating inductive microcomponent is fabricated by etching copper-diffusion barrier layer (15) between turns (30, 31) of inductive microcomponent. Fabrication of electronic component incorporating inductive microcomponent, comprises: (i) depositing layer of material having low relative permittivity on substrate; (ii) depositing layer forming hard mask; (iii) forming aperture in the hard mask vertically above the metal pads; (iv) etching the layer on material having low relative permittivity down to metal pad to form interconnection hole or via; (v) depositing layer forming copper barrier diffusion; (vi) depositing copper primer layer; (vii) depositing protective mask and removing it from the bottom of the via; (viii) depositing copper electrolytically in the via; (ix) removing the rest of the protective mask; (x) depositing top resist layer with thickness similar to the thickness of turns of the inductive microcomponent; (xi) etching the resist layer to form channels defining geometry of turns of the inductive microcomponent; (xii) depositing layer electrolytically in the etch channels; (xiii) removing the rest of the top resist layer; (xiv) etching the copper primer layer between copper turns; and (xv) etching copper-diffusion barrier layer between turns of inductive microcomponent.

公开(公告)号：FR2853645B1

公开(公告)日：2005-07-08

申请号：FR0304651

申请日：2003-04-14

Applicant: MEMSCAP

Inventor： GIRARDIE LIONEL

IPC: B81B3/00 ,  H01H59/00 ,  B81C1/00

公开(公告)号：FR2837624B1

公开(公告)日：2005-03-25

申请号：FR0203445

申请日：2002-03-20

Applicant: MEMSCAP

Inventor： GIRARDIE LIONEL

IPC: C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01L21/28 ,  H01L21/316 ,  H01L29/51 ,  H01L29/92 ,  H01G4/002

Abstract: A multilayer structure with strong relative permittivity is made up of a number of distinct layers each with a thickness of less than 500 Angstrom and made from a base of hafnium dioxide, zirconium dioxide and alumina. The hafnium dioxide, zirconium dioxide and alumina are formed from alloys with the formula HfxZrtAly)z and their stoichiometry varies from layer to layer. The structure is made up of at least five layers and at least one of the outer layers is made up of alumina. The layers are deposited by atomic layer deposition.

公开(公告)号：FR2842830B1

公开(公告)日：2004-08-27

申请号：FR0209459

申请日：2002-07-25

Applicant: MEMSCAP

Inventor： GIRARDIE LIONEL

IPC: H01L21/02 ,  H01L21/28 ,  H01L21/316 ,  H01L29/51 ,  C23C16/40 ,  B32B18/00

Abstract: High permittivity multilayer structure comprises a number of superposed layers, each of thickness less than 500 Å. The layer structure includes two layers based on a mixed oxide derived from titanium oxide (TiO 2) and tantalum pentoxide (Ta 2O 5) separated by a layer based on a mixed oxide derived from at least hafnium dioxide (HfO 2) and alumina (Al 2O 3). Preferred Features: The mixed oxide derived from at least hafnium dioxide (HfO2) and alumina (Al2O3) can also include zirconium dioxide (ZrO 2) in its composition. At least one layer situated between the layers of mixed oxide derived from titanium oxide and tantalum pentoxide and the outer part of the structure comprises a mixed oxide derived from at least two materials selected from hafnium dioxide (HfO 2), alumina (Al 2O 3), zirconium oxide (ZrO 2), titanium dioxide (TiO 2), and tantalum pentoxide (Ta 2O 5). The thickness of each layer is 1-200 Å, preferably 1-100 Å, and most preferably 1-50 Å. At least one of the external layers is alumina (Al 2O 3). Each layer is deposited by atomic layer deposition (ALD).

公开(公告)号：AU2003260580A1

公开(公告)日：2003-12-31

申请号：AU2003260580

申请日：2003-06-11

Applicant: MEMSCAP

Inventor： GIRARDIE LIONEL

IPC: H01L21/02 ,  H01L27/08

公开(公告)号：FR2837624A1

公开(公告)日：2003-09-26

申请号：FR0203445

申请日：2002-03-20

Applicant: MEMSCAP

Inventor： GIRARDIE LIONEL

IPC: C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01L21/28 ,  H01L21/316 ,  H01L29/51 ,  H01L29/92 ,  H01G4/002

Abstract: A multilayer structure with strong relative permittivity is made up of a number of distinct layers each with a thickness of less than 500 Angstrom and made from a base of hafnium dioxide, zirconium dioxide and alumina. The hafnium dioxide, zirconium dioxide and alumina are formed from alloys with the formula HfxZrtAly)z and their stoichiometry varies from layer to layer. The structure is made up of at least five layers and at least one of the outer layers is made up of alumina. The layers are deposited by atomic layer deposition.