公开(公告)号：FR2833411A1

公开(公告)日：2003-06-13

申请号：FR0115960

申请日：2001-12-11

Applicant: MEMSCAP

Inventor： GIRARDIE LIONEL ,  DAVID JEAN BAPTISTE

IPC: H01F17/00 ,  H01L21/02 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/822 ,  H01L23/52 ,  H01L27/04 ,  H01L27/08 ,  H01L49/00

Abstract: An electronic component is fabricated by: (a) incorporating an inductive microcomponent comprising stack(s) of layer of material (10a) having a low relative permittivity; (b) depositing an upper resin layer; (c) etching the resin layer to form channels defining the turns; (d) depositing a copper diffusion barrier layer; and (e) planarizing until the upper resin layer is revealed. Fabrication of an electronic component, incorporating an inductive microcomponent placed on top of a substrate and connected by a metal contact(s), comprises: (a) depositing on the substrate a stack(s) of layer of material having a low relative permittivity and a layer forming a hard mask (12a); (b) making an aperture in the hard mask layer placed in the upper position, vertically in line with the metal contacts; (c) etching the layers of material having a low relative permittivity and the subjacent hard mask layers down to the metal contact to form a via; (d) depositing a layer forming a copper diffusion barrier; (e) depositing a copper initiating layer; (f) depositing, electrolytically, a copper layer filling the via and covering the initiating layer; (g) planarizing the upper face until the upper hard mask layer is exposed; (h) depositing an upper resin layer formed from a material having a low relative permittivity; (i) etching the resin layer to form channels defining the turns of the inductive microcomponent and of possible other conductive features; (j) depositing a copper diffusion barrier layer; (k) depositing a copper initiating layer; (l) depositing electrolytically on the channels; and (m) planarizing until the upper resin layer is revealed.

公开(公告)号：FR2832853B1

公开(公告)日：2004-02-27

申请号：FR0115458

申请日：2001-11-29

Applicant: MEMSCAP

Inventor： GIRARDIE LIONEL ,  DAVID JEAN BAPTISTE

IPC: H01F17/00 ,  H01F41/04 ,  H01L21/3205 ,  H01L21/822 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L27/04 ,  H01L21/02

Abstract: Electronic component incorporating inductive microcomponent is manufactured by etching copper-diffusion barrier layer (15) between turns (30, 31) of inductive microcomponent. Fabrication of electronic component incorporating inductive microcomponent, comprises: (i) depositing layer of material having low relative permittivity on substrate (1); (ii) depositing layer (12) forming hard mask; (iii) forming aperture in the hard mask vertically above the metal pads; (iv) etching the layer on material having low relative permittivity down to metal pad to form interconnection hole or via; (v) depositing layer forming copper barrier diffusion; (vi) depositing copper primer layer; (vii) depositing protective mask and removing it from the bottom of the via; (viii) depositing copper electrolytically in the via; (ix) removing the rest of the protective mask; (x) depositing top resist layer with thickness similar to the thickness of turns of the inductive microcomponent; (xi) etching the resist layer to form channels defining geometry of turns of the inductive microcomponent; (xii) depositing layer electrolytically in the etch channels; (xiii) removing the rest of the top resist layer; (xiv) etching the copper primer layer between copper turns; and (xv) etching copper-diffusion barrier layer between turns of inductive microcomponent.

公开(公告)号：FR2832853A1

公开(公告)日：2003-05-30

申请号：FR0115458

申请日：2001-11-29

Applicant: MEMSCAP

Inventor： GIRARDIE LIONEL ,  DAVID JEAN BAPTISTE

IPC: H01F17/00 ,  H01F41/04 ,  H01L21/3205 ,  H01L21/822 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L27/04 ,  H01L21/02

Abstract: Electronic component incorporating inductive microcomponent is manufactured by etching copper-diffusion barrier layer (15) between turns (30, 31) of inductive microcomponent. Fabrication of electronic component incorporating inductive microcomponent, comprises: (i) depositing layer of material having low relative permittivity on substrate (1); (ii) depositing layer (12) forming hard mask; (iii) forming aperture in the hard mask vertically above the metal pads; (iv) etching the layer on material having low relative permittivity down to metal pad to form interconnection hole or via; (v) depositing layer forming copper barrier diffusion; (vi) depositing copper primer layer; (vii) depositing protective mask and removing it from the bottom of the via; (viii) depositing copper electrolytically in the via; (ix) removing the rest of the protective mask; (x) depositing top resist layer with thickness similar to the thickness of turns of the inductive microcomponent; (xi) etching the resist layer to form channels defining geometry of turns of the inductive microcomponent; (xii) depositing layer electrolytically in the etch channels; (xiii) removing the rest of the top resist layer; (xiv) etching the copper primer layer between copper turns; and (xv) etching copper-diffusion barrier layer between turns of inductive microcomponent.

公开(公告)号：FR2833411B1

公开(公告)日：2004-02-27

申请号：FR0115960

申请日：2001-12-11

Applicant: MEMSCAP

Inventor： GIRARDIE LIONEL ,  DAVID JEAN BAPTISTE

IPC: H01F17/00 ,  H01L21/02 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/822 ,  H01L23/52 ,  H01L27/04 ,  H01L27/08 ,  H01L49/00

Abstract: An electronic component is fabricated by: (a) incorporating an inductive microcomponent comprising stack(s) of layer of material (10a) having a low relative permittivity; (b) depositing an upper resin layer; (c) etching the resin layer to form channels defining the turns; (d) depositing a copper diffusion barrier layer; and (e) planarizing until the upper resin layer is revealed. Fabrication of an electronic component, incorporating an inductive microcomponent placed on top of a substrate and connected by a metal contact(s), comprises: (a) depositing on the substrate a stack(s) of layer of material having a low relative permittivity and a layer forming a hard mask (12a); (b) making an aperture in the hard mask layer placed in the upper position, vertically in line with the metal contacts; (c) etching the layers of material having a low relative permittivity and the subjacent hard mask layers down to the metal contact to form a via; (d) depositing a layer forming a copper diffusion barrier; (e) depositing a copper initiating layer; (f) depositing, electrolytically, a copper layer filling the via and covering the initiating layer; (g) planarizing the upper face until the upper hard mask layer is exposed; (h) depositing an upper resin layer formed from a material having a low relative permittivity; (i) etching the resin layer to form channels defining the turns of the inductive microcomponent and of possible other conductive features; (j) depositing a copper diffusion barrier layer; (k) depositing a copper initiating layer; (l) depositing electrolytically on the channels; and (m) planarizing until the upper resin layer is revealed.

公开(公告)号：FR2832852B1

公开(公告)日：2004-02-27

申请号：FR0115456

申请日：2001-11-29

Applicant: MEMSCAP

Inventor： GIRARDIE LIONEL ,  DAVID JEAN BAPTISTE

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/288 ,  H01L21/3205 ,  H01L21/822 ,  H01L23/12 ,  H01L23/15 ,  H01L23/52 ,  H01L23/522 ,  H01L27/04 ,  H01L27/08 ,  H01F17/00

公开(公告)号：FR2832852A1

公开(公告)日：2003-05-30

申请号：FR0115456

申请日：2001-11-29

Applicant: MEMSCAP

Inventor： GIRARDIE LIONEL ,  DAVID JEAN BAPTISTE

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/288 ,  H01L21/3205 ,  H01L21/822 ,  H01L23/12 ,  H01L23/15 ,  H01L23/52 ,  H01L23/522 ,  H01L27/04 ,  H01L27/08 ,  H01F17/00

Abstract: Electronic component incorporating inductive microcomponent is fabricated by etching copper-diffusion barrier layer (15) between turns (30, 31) of inductive microcomponent. Fabrication of electronic component incorporating inductive microcomponent, comprises: (i) depositing layer of material having low relative permittivity on substrate; (ii) depositing layer forming hard mask; (iii) forming aperture in the hard mask vertically above the metal pads; (iv) etching the layer on material having low relative permittivity down to metal pad to form interconnection hole or via; (v) depositing layer forming copper barrier diffusion; (vi) depositing copper primer layer; (vii) depositing protective mask and removing it from the bottom of the via; (viii) depositing copper electrolytically in the via; (ix) removing the rest of the protective mask; (x) depositing top resist layer with thickness similar to the thickness of turns of the inductive microcomponent; (xi) etching the resist layer to form channels defining geometry of turns of the inductive microcomponent; (xii) depositing layer electrolytically in the etch channels; (xiii) removing the rest of the top resist layer; (xiv) etching the copper primer layer between copper turns; and (xv) etching copper-diffusion barrier layer between turns of inductive microcomponent.