32.
    发明专利
    未知

    公开(公告)号:DE69506456T2

    公开(公告)日:1999-07-22

    申请号:DE69506456

    申请日:1995-02-16

    Applicant: MOTOROLA INC

    Abstract: A field emission device (100) including an electron emitter (106) and a peripherally disposed gate extraction electrode (103) defining a free space region (105) therebetween. The device (100) has an insulating layer (104) substantially isolating the gate extraction electrode (103) from the free space region (105). The device prevents damaging arc discharge between the electron emitter (106) and gate extraction electrode (103) because of the improved insulation and provides an additional mechanism for electric field enhancement.

    33.
    发明专利
    未知

    公开(公告)号:DE69505856T2

    公开(公告)日:1999-06-02

    申请号:DE69505856

    申请日:1995-01-19

    Applicant: MOTOROLA INC

    Abstract: An electron emission device (800) including an array of microelectronic field emission devices (801), each with an integrally formed capacitance (804), a plurality of switches (805), a weighting level detector (806), and data storage and weighting structure (808). In one operational method, the field emission device (801) electron current emission is characterized and a weighting factor is calculated and coupled into the data storage and weighting means (808) so as to provide electron emission device (801) electron emission current in accordance with a desired emission level as prescribed by a data input signal and notwithstanding variations in electron current emission which may be present due to device fabrication.

    34.
    发明专利
    未知

    公开(公告)号:DE69216710T2

    公开(公告)日:1997-07-10

    申请号:DE69216710

    申请日:1992-08-17

    Applicant: MOTOROLA INC

    Abstract: A field emission electron device employing an electron emitter comprised of a coating of diamond material (406) disposed on a surface of a selectively formed conductive/semiconductive electrode (402) and a method of forming the device including a step wherein carbon ions (404) are implanted at a surface of a conductive/semiconductive electrode (402) to function as nucleation sites for the diamond formation.

    35.
    发明专利
    未知

    公开(公告)号:DE69204940T2

    公开(公告)日:1996-05-15

    申请号:DE69204940

    申请日:1992-08-10

    Applicant: MOTOROLA INC

    Abstract: A field emission electron emitter employing a coating of diamond material (406) disposed on a surface of a layer of conductive/semiconductive material (407) is constructed by a method including the steps of implanting carbon ions (404) at a surface of a selectively shaped substrate (401) to function as nucleation sites for the diamond formation. A conductive layer (407) is deposited over the diamond (406) and the substrate (401) is removed to leave an electron emitter with a diamond coating.

    37.
    发明专利
    未知

    公开(公告)号:ES2080340T3

    公开(公告)日:1996-02-01

    申请号:ES91918578

    申请日:1991-09-13

    Applicant: MOTOROLA INC

    Abstract: A cold-cathode field emission device controls electron emission by using a current source coupled to the emitter. The open circuit voltage of the current source is less than the voltage at which the FED would emit electrons. Application of an accelerating potential on the gate enables electron emission. Electron emission from the FED is governed by the current source.

    38.
    发明专利
    未知

    公开(公告)号:DK0496576T3

    公开(公告)日:1996-01-29

    申请号:DK92300499

    申请日:1992-01-21

    Applicant: MOTOROLA INC

    Inventor: KANE ROBERT C

    Abstract: An electronic device employing controlled (102) cold-cathode field-induced electron emission device(s) is set forth wherein controlling sources, drivers, select logic, and interconnecting lines (103) and paths are integrated, directly within a single structure.

    39.
    发明专利
    未知

    公开(公告)号:DE69202634T2

    公开(公告)日:1996-01-11

    申请号:DE69202634

    申请日:1992-07-15

    Applicant: MOTOROLA INC

    Abstract: A method of producing an FED including a central conductive region (103) having a surface perpendicular to the supporting structure (101) forming a device anode, a structure including first (106) and second (112) layers.of intrinsic semiconductor material with a conductive layer (105), forming an emitter, sandwiched therebetween and stacked to each provide a surface parallel to and spaced from the conductive region (103) surface, and conductive layers (114) disposed on the provided surfaces of the first (106) and second 9112) layers, perpendicular to the sandwiched conductive layer (105), in spaced relation to each other and the sandwiched conductive layer (105) to form gate extraction electrodes.

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