公开(公告)号：EP2677306A1

公开(公告)日：2013-12-25

申请号：EP12172620.2

申请日：2012-06-19

Applicant: NXP B.V.

Inventor： Merz, Matthias ,  Juffermans, Casper ,  Nackaerts, Axel

IPC: G01N27/414

CPC classification number: H01L29/66 ,  G01N27/4145 ,  G01N27/4148 ,  H01L29/66007

Abstract: Disclosed is an integrated circuit comprising a substrate (10) carrying plurality of circuit elements (20); a metallization stack (30) over said substrate for providing interconnections to at least some of said circuit elements, the metallization stack comprising a plurality of patterned metal layers (31) spatially separated from each other by respective electrically insulating layers (32), at least some of said electrically insulating layers comprising conductive portions (33) that electrically interconnect portions of adjacent metal layers, wherein at least one of the patterned metallization layers comprises a plurality of ion-sensitive electrodes (34), each ion-sensitive electrode being electrically connected to at least one of said circuit elements, a plurality of sample volumes (50) extending into said metallization stack, each sample volume terminating at one of said ion-sensitive electrodes; and an ion-sensitive layer lining at least the ion-sensitive electrodes in said sample volumes. A method of manufacturing such an IC is also disclosed.

Abstract translation: 公开了一种集成电路，其包括承载多个电路元件（20）的基板（10）。 在所述衬底上方的金属化叠层（30），用于提供至少一些所述电路元件的互连，所述金属化堆叠包括通过相应的电绝缘层（32）在空间上彼此分离的多个图案化金属层（31），至少 一些所述电绝缘层包括导电部分（33），导电部分相互连接相邻金属层的部分，其中图案化金属化层中的至少一个包括多个离子敏感电极（34），每个离子敏感电极电连接 至少一个所述电路元件，延伸到所述金属化堆叠中的多个样品体积（50），每个样品体积终止于所述离子敏感电极之一处; 以及至少衬在所述样品体积中的离子敏感电极的离子敏感层。 还公开了制造这种IC的方法。

公开(公告)号：EP2629084A1

公开(公告)日：2013-08-21

申请号：EP12156028.8

申请日：2012-02-17

Applicant: NXP B.V.

Inventor： Merz, Matthias ,  Humbert, Aurelie ,  Tio Castro, David ,  Falepin, Annelies

IPC: G01N25/18 ,  H01L23/58 ,  H01L27/00 ,  B81C1/00

CPC classification number: H01L23/34 ,  G01N25/18 ,  H01L21/768 ,  H01L23/345 ,  H01L23/5228 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed is an integrated circuit comprising a substrate (10) including semiconductor devices and a metallization stack (20) over said substrate for interconnecting said devices, the metallization stack comprising a cavity (36), and a thermal conductivity sensor comprising at least one conductive portion (16, 18) of said metallization stack suspended in said cavity. A method of manufacturing such an IC is also disclosed.

Abstract translation: 公开了一种集成电路，其包括包含半导体器件的衬底（10）和在所述衬底上的用于互连所述器件的金属化叠层（20），所述金属化叠层包括空腔（36）以及热导传感器，所述热传导传感器包括至少一个导电部分 （16,18）悬挂在所述空腔中。 还公开了制造这种IC的方法。

公开(公告)号：EP2554981A1

公开(公告)日：2013-02-06

申请号：EP11191420.6

申请日：2011-11-30

Applicant: NXP B.V.

Inventor： Merz, Matthias ,  Humbert, Aurelie ,  Daamen, Roel ,  Tio Castro, David

IPC: G01N27/12 ,  G01N33/00 ,  G01N27/18

CPC classification number: G01N27/128 ,  G01N25/18 ,  G01N27/121 ,  G01N27/125 ,  G01N27/22 ,  G01N33/004 ,  G01N33/18 ,  G01N33/1826 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/1461 ,  H01L2924/00

Abstract: Disclosed is an integrated circuit comprising a substrate (10) carrying a plurality of circuit elements; a metallization stack (12,14,16) interconnecting said circuit elements, said metallization stack comprising a patterned upper metallization layer comprising a first metal portion (20) and a second metal portion (21); a passivation stack (24,26,28) covering the metallization stack; a gas sensor including a sensing material portion (32,74) on the passivation stack; a first conductive portion (38) extending through the passivation stack connecting a first region of the sensing material portion to the first metal portion; and a second conductive portion (40) extending through the passivation stack connecting a second region of the sensing material portion to the second metal portion. A method of manufacturing such an IC is also disclosed.
The gas sensor measures the gas concentration either by measuring the resistivity of the sensing material as the test gas is absorbed in the sensing material or by measuring the temperature change of the sensing material due to changes of thermal conductivity of the test gas.

Abstract translation: 公开的是包括承载的电路元件的多个A基片（10）的集成电路; 互连上述电路元件的金属化叠层（12,14,16），所述金属化叠层包括图案化上金属层包括第一金属部分（20）和第二金属部分（21）; 一钝化叠层（24,26,28）覆盖所述金属化叠层; 的气体传感器，包括钝化叠层上的感测材料部分（32,74）; 第一导电部分（38）通过在部分连接所述感测材料的第一区域到所述第一金属部分的钝化叠层延伸; 和第二导电部分（40）通过在部分连接所述感测材料的第二区域，以第二金属部分钝化叠层延伸。 制造在IC IST盘检验的方法，游离缺失。 的气体传感器，通过测量所述传感材料的电阻率作为测试气体在感测材料或通过测量所述传感材料的温度变化所吸收由于测试气体的热导率的变化测量气体浓度无论哪种。