公开(公告)号：EP2623969B1

公开(公告)日：2014-05-14

申请号：EP12153390.5

申请日：2012-01-31

Applicant: NXP B.V.

Inventor： Ponomarev, Youri Victorovitch ,  Tio Castro, David ,  Daamen, Roel

IPC: G01N27/12 ,  G01N27/22

CPC classification number: G01N27/048 ,  G01N27/121 ,  G01N27/223 ,  G01N33/0036 ,  H01L27/144 ,  H01L31/18 ,  H01L51/0034 ,  H01L51/42

公开(公告)号：EP2395333B1

公开(公告)日：2017-09-13

申请号：EP10165448.1

申请日：2010-06-09

Applicant: NXP B.V.

Inventor： Tio Castro, David ,  Humbert, Aurelie

IPC: G01J5/38 ,  G01J1/42 ,  G01N17/04

CPC classification number: G01J5/38 ,  G01J1/42 ,  G01N17/043

公开(公告)号：EP2559996B1

公开(公告)日：2017-11-22

申请号：EP11177642.3

申请日：2011-08-16

Applicant: NXP B.V.

Inventor： Humbert, Aurelie ,  Tio Castro, David

IPC: G01N27/04 ,  G01N27/12

CPC classification number: G01N27/128

Abstract: A gas sensor on a semiconductor substrate. The gas sensor includes an elongate sensor element extending across an opening and has first and second opposed surfaces exposed for contact with a gas to be sensed. The first surface faces away from a major surface of the substrate. The second surface faces toward said major surface. The electrical conductivity of the elongate sensor element is sensitive to a composition and/or concentration of said gas to which the opposed first and second surfaces are exposable. The gas sensor further includes a support structure arranged to increase the mechanical robustness of the gas sensor by supporting the elongate sensor element in the opening.

公开(公告)号：EP2395333A1

公开(公告)日：2011-12-14

申请号：EP10165448.1

申请日：2010-06-09

Applicant: NXP B.V.

Inventor： Tio Castro, David ,  Humbert, Aurelie

IPC: G01J5/38 ,  G01J1/42 ,  G01N17/04

CPC classification number: G01J5/38 ,  G01J1/42 ,  G01N17/043

Abstract: The light dose received by perishable goods is an important parameter in determining the of those goods. A light sensor (30) is described having a photosensitive element (18) which changes its material property according to the light dose received. This change can be detected electrically by electrodes (12, 14) in the light sensor. Because the change in material property is permanent, this removes the need for a memory to store a value representing the light dose received by the light sensor.

Abstract translation: 易腐货物接收的光剂量是确定这些货物的重要参数。 光传感器（30）被描述为具有根据所接收的光剂量改变其材料特性的光敏元件（18）。 该变化可以通过光传感器中的电极（12,14）进行电检测。 由于材料特性的变化是永久性的，因此无需存储代表由光传感器接收的光剂量的值。

公开(公告)号：EP2623969A1

公开(公告)日：2013-08-07

申请号：EP12153390.5

申请日：2012-01-31

Applicant: NXP B.V.

Inventor： Ponomarev, Youri Victorovitch ,  Tio Castro, David ,  Daamen, Roel

IPC: G01N27/12 ,  G01N27/22 ,  G01J1/00 ,  G01N21/17

CPC classification number: G01N27/048 ,  G01N27/121 ,  G01N27/223 ,  G01N33/0036 ,  H01L27/144 ,  H01L31/18 ,  H01L51/0034 ,  H01L51/42

Abstract: Disclosed is an integrated circuit comprising a substrate (10) including at least one light sensor (12); an interconnect structure (20) over the substrate; at least one passivation layer (30) over the interconnect structure, said passivation layer including a first area over the at least one light sensor; and a gas sensor such as a moisture sensor (50) at least partially on a further area of the at least one passivation layer, wherein the gas sensor comprises a gas sensitive layer (46') in between a first electrode (42) and a second electrode (44), the gas sensitive layer further comprising a portion (46") over the first area. A method of manufacturing such an IC is also disclosed.

Abstract translation: 公开了一种集成电路，其包括：包括至少一个光传感器（12）的基板（10）; 在所述衬底上的互连结构（20）; 所述互连结构上的至少一个钝化层（30），所述钝化层包括所述至少一个光传感器上的第一区域; 以及气体传感器，例如至少部分地在所述至少一个钝化层的另一区域上的湿度传感器（50），其中所述气体传感器包括在第一电极（42）和第二电极 第二电极（44），气敏层还包括在第一区域上的部分（46“），还公开了制造这种IC的方法。

公开(公告)号：EP2559996A1

公开(公告)日：2013-02-20

申请号：EP11177642.3

申请日：2011-08-16

Applicant: NXP B.V.

Inventor： Humbert, Aurelie ,  Tio Castro, David

IPC: G01N27/04 ,  G01N27/12

CPC classification number: G01N27/128

Abstract: A gas sensor on a semiconductor substrate. The gas sensor includes an elongate sensor element extending across an opening and has first and second opposed surfaces exposed for contact with a gas to be sensed. The first surface faces away from a major surface of the substrate. The second surface faces toward said major surface. The electrical conductivity of the elongate sensor element is sensitive to a composition and/or concentration of said gas to which the opposed first and second surfaces are exposable. The gas sensor further includes a support structure arranged to increase the mechanical robustness of the gas sensor by supporting the elongate sensor element in the opening.

Abstract translation: 半导体衬底上的气体传感器。 气体传感器包括延伸穿过开口的细长传感器元件，并且具有暴露于与被感测气体接触的第一和第二相对表面。 第一表面背离衬底的主表面。 第二表面面向所述主表面。 细长传感器元件的电导率对相对的第一和第二表面可暴露的所述气体的组成和/或浓度敏感。 气体传感器还包括支撑结构，其被布置成通过将细长的传感器元件支撑在开口中来增加气体传感器的机械坚固性。

公开(公告)号：EP2554981B1

公开(公告)日：2014-03-19

申请号：EP11191420.6

申请日：2011-11-30

Applicant: NXP B.V.

Inventor： Merz, Matthias ,  Humbert, Aurelie ,  Daamen, Roel ,  Tio Castro, David

IPC: G01N27/12 ,  G01N33/00 ,  G01N27/18

CPC classification number: G01N27/128 ,  G01N25/18 ,  G01N27/121 ,  G01N27/125 ,  G01N27/22 ,  G01N33/004 ,  G01N33/18 ,  G01N33/1826 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/1461 ,  H01L2924/00

Abstract: Disclosed is an integrated circuit comprising a substrate (10) carrying a plurality of circuit elements; a metallization stack (12,14,16) interconnecting said circuit elements, said metallization stack comprising a patterned upper metallization layer comprising a first metal portion (20) and a second metal portion (21); a passivation stack (24,26,28) covering the metallization stack; a gas sensor including a sensing material portion (32,74) on the passivation stack; a first conductive portion (38) extending through the passivation stack connecting a first region of the sensing material portion to the first metal portion; and a second conductive portion (40) extending through the passivation stack connecting a second region of the sensing material portion to the second metal portion. A method of manufacturing such an IC is also disclosed. The gas sensor measures the gas concentration either by measuring the resistivity of the sensing material as the test gas is absorbed in the sensing material or by measuring the temperature change of the sensing material due to changes of thermal conductivity of the test gas.

公开(公告)号：EP2629084A1

公开(公告)日：2013-08-21

申请号：EP12156028.8

申请日：2012-02-17

Applicant: NXP B.V.

Inventor： Merz, Matthias ,  Humbert, Aurelie ,  Tio Castro, David ,  Falepin, Annelies

IPC: G01N25/18 ,  H01L23/58 ,  H01L27/00 ,  B81C1/00

CPC classification number: H01L23/34 ,  G01N25/18 ,  H01L21/768 ,  H01L23/345 ,  H01L23/5228 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed is an integrated circuit comprising a substrate (10) including semiconductor devices and a metallization stack (20) over said substrate for interconnecting said devices, the metallization stack comprising a cavity (36), and a thermal conductivity sensor comprising at least one conductive portion (16, 18) of said metallization stack suspended in said cavity. A method of manufacturing such an IC is also disclosed.

Abstract translation: 公开了一种集成电路，其包括包含半导体器件的衬底（10）和在所述衬底上的用于互连所述器件的金属化叠层（20），所述金属化叠层包括空腔（36）以及热导传感器，所述热传导传感器包括至少一个导电部分 （16,18）悬挂在所述空腔中。 还公开了制造这种IC的方法。

公开(公告)号：EP2554981A1

公开(公告)日：2013-02-06

申请号：EP11191420.6

申请日：2011-11-30

Applicant: NXP B.V.

Inventor： Merz, Matthias ,  Humbert, Aurelie ,  Daamen, Roel ,  Tio Castro, David

IPC: G01N27/12 ,  G01N33/00 ,  G01N27/18

CPC classification number: G01N27/128 ,  G01N25/18 ,  G01N27/121 ,  G01N27/125 ,  G01N27/22 ,  G01N33/004 ,  G01N33/18 ,  G01N33/1826 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/1461 ,  H01L2924/00

Abstract: Disclosed is an integrated circuit comprising a substrate (10) carrying a plurality of circuit elements; a metallization stack (12,14,16) interconnecting said circuit elements, said metallization stack comprising a patterned upper metallization layer comprising a first metal portion (20) and a second metal portion (21); a passivation stack (24,26,28) covering the metallization stack; a gas sensor including a sensing material portion (32,74) on the passivation stack; a first conductive portion (38) extending through the passivation stack connecting a first region of the sensing material portion to the first metal portion; and a second conductive portion (40) extending through the passivation stack connecting a second region of the sensing material portion to the second metal portion. A method of manufacturing such an IC is also disclosed.
The gas sensor measures the gas concentration either by measuring the resistivity of the sensing material as the test gas is absorbed in the sensing material or by measuring the temperature change of the sensing material due to changes of thermal conductivity of the test gas.

Abstract translation: 公开的是包括承载的电路元件的多个A基片（10）的集成电路; 互连上述电路元件的金属化叠层（12,14,16），所述金属化叠层包括图案化上金属层包括第一金属部分（20）和第二金属部分（21）; 一钝化叠层（24,26,28）覆盖所述金属化叠层; 的气体传感器，包括钝化叠层上的感测材料部分（32,74）; 第一导电部分（38）通过在部分连接所述感测材料的第一区域到所述第一金属部分的钝化叠层延伸; 和第二导电部分（40）通过在部分连接所述感测材料的第二区域，以第二金属部分钝化叠层延伸。 制造在IC IST盘检验的方法，游离缺失。 的气体传感器，通过测量所述传感材料的电阻率作为测试气体在感测材料或通过测量所述传感材料的温度变化所吸收由于测试气体的热导率的变化测量气体浓度无论哪种。