FET based sensor with dual-gate stack
    1.
    发明公开
    FET based sensor with dual-gate stack 有权
    FET传感器zweifachem门

    公开(公告)号:EP2522993A1

    公开(公告)日:2012-11-14

    申请号:EP11165350.7

    申请日:2011-05-09

    Applicant: NXP B.V.

    CPC classification number: G01N27/414 G01N27/4148

    Abstract: The invention relates to an electrochemical sensor integrated on a substrate, the electrochemical sensor comprising: a field effect transistor integrated on the substrate and having a source (S), gate (G) and drain (D) connections, said gate of the field effect transistor comprising: a sensing gate (18) conductively coupled to a sensing electrode (16); and a bias gate (20), wherein the sensing gate is capacitively coupled to the bias gate and the bias gate is capacitively coupled to the substrate.

    Abstract translation: 本发明涉及一种集成在基板上的电化学传感器,该电化学传感器包括:集成在基板上并具有源极(S),栅极(G)和漏极(D)连接的场效应晶体管,场效应栅极 晶体管,包括:感测门(18),其传导耦合到感测电极(16); 和偏置栅极(20),其中所述感测栅极电容耦合到所述偏置栅极,并且所述偏置栅极电容耦合到所述衬底。

    Integrated circuit with sensor and method of manufacturing such an integrated circuit
    3.
    发明授权
    Integrated circuit with sensor and method of manufacturing such an integrated circuit 有权
    一种集成电路,包括制造这种集成电路的传感器和方法

    公开(公告)号:EP2554980B1

    公开(公告)日:2014-06-25

    申请号:EP11176484.1

    申请日:2011-08-03

    Applicant: NXP B.V.

    Inventor: Merz, Matthias

    Abstract: Disclosed is an integrated circuit comprising a substrate (10) carrying a plurality of circuit elements; a metallization stack (12,14,16) interconnecting said circuit elements, said metallization stack comprising a patterned upper metallization layer comprising a first metal portion (20) and a second metal portion (21); a passivation stack (24,26,28) covering the metallization stack; a gas sensor including a sensing material portion (32,74) on the passivation stack; a first conductive portion (38) extending through the passivation stack connecting a first region of the sensing material portion to the first metal portion; and a second conductive portion (40) extending through the passivation stack connecting a second region of the sensing material portion to the second metal portion. A method of manufacturing such an IC is also disclosed. The gas sensor measures the gas concentration either by measuring the resistivity of the sensing material as the test gas is absorbed in the sensing material or by measuring the temperature change of the sensing material due to changes of thermal conductivity of the test gas.

    Integrated circuit with water presence arrangement and manufacturing method therefor
    4.
    发明公开
    Integrated circuit with water presence arrangement and manufacturing method therefor 审中-公开
    一种集成电路,包括用于水和方法存在它们的制备装置

    公开(公告)号:EP2336757A1

    公开(公告)日:2011-06-22

    申请号:EP09178227.6

    申请日:2009-12-07

    Applicant: NXP B.V.

    CPC classification number: G01N27/121 G01M3/045 G01N27/06

    Abstract: Disclosed is an integrated circuit comprising an electrode arrangement (30, 32) for detecting the presence of a liquid, said electrode arrangement comprising a first electrode (30) and a second electrode (32), wherein, prior to exposure of the electrode arrangement to said liquid, a surface of at least one of the first electrode and second electrode is at least partially covered by a compound (40) that is soluble in the liquid; the electrical properties of the electrode arrangement being dependent on the amount of the compound covering said surface. An package and electronic device comprising such an IC and a method of manufacturing such an IC are also disclosed.

    Abstract translation: 本发明公开了一种集成电路,用于检测液体的存在,其包括电极装置(30,32)的,所述电极布置包括第一电极(30)和第二电极(32)worin,之前的电极布置的暴露于 所述液体,所述第一电极和第二电极中的至少一个的表面至少部分地通过将化合物(40)所覆盖的确是溶于液体; 电极布置的电特性取决于覆盖所述表面上的化合物的量。 所以盘被游离缺失打包和电子设备,包括寻求IC和IC在检查制造的方法。

    Electrochemical sensor
    5.
    发明公开
    Electrochemical sensor 有权
    电化学传感器

    公开(公告)号:EP2287597A1

    公开(公告)日:2011-02-23

    申请号:EP09252002.2

    申请日:2009-08-17

    Applicant: NXP B.V.

    CPC classification number: G01N27/4167 G01N27/333 G01N27/414 Y10T29/4913

    Abstract: An electrochemical sensor device (35) comprising: a sensor chip (30) having an integrated electrochemical sensor element (34); and a substrate (20) having a first surface (23) on which the sensor chip (30) is mounted, the substrate (20) comprising a reference electrode structure (36) for the integrated electrochemical sensor element (34), the reference electrode structure (36) connected to the sensor chip (30) via an electrical connection (21a) on the first surface.(23) of the substrate (20).

    Abstract translation: 一种电化学传感器装置(35),包括:具有集成电化学传感器元件(34)的传感器芯片(30); 和具有其上安装有所述传感器芯片(30)的第一表面(23)的衬底(20),所述衬底(20)包括用于所述集成电化学传感器元件(34)的参考电极结构(36),所述参考电极 (20)的第一表面(23)上的电连接(21a)连接到传感器芯片(30)的结构(36)。

    Threshold acceleration sensor and method of manufacturing
    6.
    发明公开
    Threshold acceleration sensor and method of manufacturing 有权
    阈值加速度传感器和制造方法

    公开(公告)号:EP2275384A1

    公开(公告)日:2011-01-19

    申请号:EP09165533.2

    申请日:2009-07-15

    Applicant: NXP B.V.

    Abstract: Disclosed is a semiconductor device comprising a stack of patterned metal layers (12) separated by dielectric layers (14), said stack comprising a first conductive support structure (20) and a second conductive support structure (21) and a cavity (42) in which an inertial mass element (22) comprising at least one metal portion is conductively coupled to the first support structure and the second support structure by respective conductive connection portions (24), at least one of said conductive connection portions being designed to break upon the inertial mass element being exposed to an acceleration force exceeding a threshold defined by the dimensions of the conductive connection portions. A method of manufacturing such a semiconductor device is also disclosed.

    Abstract translation: 公开了一种半导体器件,包括由电介质层(14)分隔开的图案化金属层(12)的叠层,所述叠层包括第一导电支撑结构(20)和第二导电支撑结构(21) 其中包括至少一个金属部分的惯性质量元件(22)通过相应的导电连接部分(24)导电地耦合到第一支撑结构和第二支撑结构,所述导电连接部分中的至少一个设计成在 惯性质量元件暴露于超过由导电连接部分的尺寸限定的阈值的加速力。 还公开了制造这种半导体器件的方法。

    Humidity or gas sensor
    7.
    发明公开
    Humidity or gas sensor 审中-公开
    Feuchte-oder Gassensor

    公开(公告)号:EP2230507A1

    公开(公告)日:2010-09-22

    申请号:EP09250747.4

    申请日:2009-03-17

    Applicant: NXP B.V.

    Abstract: An environmental sensor (200) comprising: a semiconductor die (110) having a transducer (120) provided on a surface thereof; a carrier substrate (210) comprising electrical connections (230) connected to the semiconductor die surface; and a layer (250) of a sealing compound covering the semiconductor die surface and providing a seal between the die and the carrier substrate, wherein the transducer is configured to detect a change in an environmental parameter to which the sealing compound is exposed.

    Abstract translation: 一种环境传感器(200),包括:具有设置在其表面上的换能器(120)的半导体管芯(110) 载体基板(210),包括连接到所述半导体管芯表面的电连接(230); 以及覆盖所述半导体管芯表面并且在所述管芯和所述载体衬底之间提供密封的密封化合物层(250),其中所述传感器被配置为检测所述密封化合物暴露于其中的环境参数的变化。

    pH sensor and manufacturing method
    8.
    发明授权
    pH sensor and manufacturing method 有权
    pH传感器和制造方法

    公开(公告)号:EP2570803B1

    公开(公告)日:2018-03-21

    申请号:EP11181700.3

    申请日:2011-09-16

    Applicant: NXP B.V.

    Abstract: Disclosed is a pH sensor comprising a carrier (10) comprising a plurality of conductive tracks and an exposed conductive area (40) defining a reference electrode connected to one of said conductive tracks; a sensing device (30) mounted on the carrier and connected at least one other of said conductive tracks; an encapsulation (20) covering the carrier, said encapsulation comprising a first cavity (22) exposing a surface (32) of the sensing device and a second cavity (24) exposing the exposed conductive area, said second cavity comprising a reference electrode material (42) and an ion reservoir material (44) sharing at least one ion type with said reference electrode material, the reference electrode material being sandwiched between the exposed conductive area and the ion reservoir material. A method of manufacturing such a pH sensor is also disclosed.

    Electrochemical sensor device
    10.
    发明公开
    Electrochemical sensor device 审中-公开
    Elektrochemische Sensorvorrichtung

    公开(公告)号:EP2759832A1

    公开(公告)日:2014-07-30

    申请号:EP13152411.8

    申请日:2013-01-23

    Applicant: NXP B.V.

    Abstract: There is disclosed an electrochemical sensor device (10) comprising: an integrated electrochemical sensor element (12) having: a substrate (20); first (16) and second (18) electrodes formed on the upper surface of the substrate (20); and an electrolyte layer (19) formed on the first (16) and second (18) electrodes so as to electrically contact both the first (16) and second (18) electrodes; and a sensor integrated circuit (14) electrically connected to the first (16) and second (18) electrodes of the integrated electrochemical sensor element (12). The integrated electrochemical sensor element (12) and the sensor integrated circuit (14) are provided in a single package.

    Abstract translation: 公开了一种电化学传感器装置(10),包括:集成的电化学传感器元件(12),具有:基底(20); 形成在基板(20)的上表面上的第一(16)和第二(18)电极; 和形成在第一电极(16)和第二电极(18)上的电解质层(19),以便电接触第一电极(16)和第二电极(18); 以及电连接到所述集成电化学传感器元件(12)的所述第一(16)和第二(18)电极的传感器集成电路(14)。 集成电化学传感器元件(12)和传感器集成电路(14)设置在单个封装中。

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