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公开(公告)号:US20190204608A1
公开(公告)日:2019-07-04
申请号:US16328699
申请日:2017-08-24
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: Peter Brick , Hubert Halbritter
CPC classification number: G02B27/0927 , F21V5/004 , F21V5/008 , F21V5/043 , F21Y2105/10 , F21Y2115/10 , F21Y2115/30 , G02B3/0068 , G02B5/0215 , G02B5/0278 , G02B27/0961 , G02B27/0966
Abstract: In an embodiment, an arrangement includes an optoelectronic device including a plurality of components configured to generate electromagnetic radiation, wherein the components are arranged in a grid having identical spacings and a scattering element for expanding a radiation region of the electromagnetic radiation of the device, the scattering element comprising a first layer having first linear structures, the first structures being arranged parallel to one another and a second layer having second linear structures, the second linear structures being aligned parallel to one another, wherein the first linear structures and the second linear structures are arranged at a predefined angle of between 1° and 179°, wherein the first linear structures and/or the second linear structures constitute wave peaks and wave valleys, wherein adjacent wave valleys and adjacent wave peaks constitute a periodic spacing, and wherein the periodic spacing deviates at most by 20% from a multiple of the periodic spacing of the components.
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公开(公告)号:US20180145211A1
公开(公告)日:2018-05-24
申请号:US15577626
申请日:2016-05-27
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: Hubert Halbritter , Markus Arzberger , Alexander Linkov
CPC classification number: H01L33/08 , G02B1/005 , G02B5/04 , G06T7/521 , H01L33/0045 , H01L33/105 , H01L33/58
Abstract: An optoelectronic arrangement that produces a light pattern includes a light-emitting diode chip configured to emit electromagnetic radiation on its upper side and forming a first two-dimensional pattern on the upper side of the light-emitting diode chip, and an optically imaging element configured to project electromagnetic radiation emitted by the light-emitting diode chip into an environment of the optoelectronic arrangement.
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公开(公告)号:US20180053801A1
公开(公告)日:2018-02-22
申请号:US15557589
申请日:2016-03-17
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: Karsten Auen , Andreas Wojcik , Hubert Halbritter , Tim Böscke
IPC: H01L27/146 , G01S17/89
CPC classification number: H01L27/14627 , G01S17/89 , H01L27/14605 , H01L27/14625 , H01L27/14629 , H01L27/14634 , H01L27/14636
Abstract: A sensor device is disclosed. In an embodiment, the sensor device includes a carrier having a plane carrier surface, a plurality of photodetectors arranged on the carrier surface, each photodetector including a photosensitive sensor area and a lens arrangement arranged opposite the sensor areas, wherein the lens arrangement includes an optical axis, wherein the lens arrangement is configured to image electromagnetic radiation onto the sensor areas, wherein the plurality of photodetectors comprise at least one first photodetector having a first sensor area, the first sensor area comprises at least one property which differs from a property of a second sensor area of a second photodetector of the plurality of photodetectors, and wherein the second photodetector is arranged closer to the optical axis than the at least one first photodetector in order to reduce an optical imaging aberration of the lens arrangement.
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公开(公告)号:US09859473B2
公开(公告)日:2018-01-02
申请号:US14900155
申请日:2014-06-23
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: Britta Göötz , Hubert Halbritter
CPC classification number: H01L33/502 , C09K11/7774 , H01L25/167 , H01L33/505 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/73265 , H01L2224/8592 , H01L2924/16195 , H01L2924/181 , H01L2933/0033 , H01L2933/0041 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
Abstract: A radiation-emitting optoelectronic device is provided. The radiation-emitting optoelectronic device includes a semiconductor chip that, when the device is in operation, emits primary radiation of a wavelength of between 600 nm and 1000 nm. A conversion element includes a conversion material comprising ions of one or more metals selected from a group comprising La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Cr, Pb and Mg. The conversion material converts the primary radiation emitted by the semiconductor chip virtually completely into secondary radiation of a wavelength of between 1000 nm and 6000 nm.
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公开(公告)号:US09664557B2
公开(公告)日:2017-05-30
申请号:US14415513
申请日:2013-07-12
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor: Dirk Sossenheimer , Hubert Halbritter
CPC classification number: G01J1/4204 , G01J1/0233 , G01J1/16 , G01J1/4257 , G01J1/44 , G01J2001/0257 , G01J2001/4247 , H05B37/0218 , Y02B20/46
Abstract: Fluctuation frequency (F) of an ambient light (S) is identified by: A) specifying first frequency (F1) and second frequency (F2), higher than said first frequency; B) measuring an optical power of the ambient light with a signal receiver (2) over a measuring time interval (Ti) during a total measuring time (T), which is shorter than or equal to a first cycle duration (P1) belonging to the first frequency; C) detecting the optical power of the ambient light in a time series over the total measuring time; D) determining at least one detection feature for identifying the fluctuation frequency by evaluating the time series; and E) identifying the fluctuation frequency of the ambient light as the first frequency or as the second frequency using the at least one detection feature.
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公开(公告)号:US20160277120A1
公开(公告)日:2016-09-22
申请号:US15036098
申请日:2014-11-13
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor: Hubert Halbritter , Markus Lermer
IPC: H04B10/67 , H04B10/116 , H04B10/114
CPC classification number: H04B10/675 , H04B10/1141 , H04B10/116 , H04B10/671 , H04B10/672
Abstract: Radiation receiver apparatus with a radiation receiver and a radiation entrance face, wherein the radiation receiver includes an active region that detects radiation with a target wavelength in the near-infrared, an optical element is arranged between the radiation entrance face and the radiation receiver, an optical axis of the optical element extends through the radiation receiver, the optical element is shaped and arranged relative to the radiation receiver such that, of radiation incident on the radiation entrance face at an angle of greater than or equal to 40° to the optical axis, at most 10% is incident on the radiation receiver, and a visible light filter is formed between the radiation receiver and the radiation entrance face.
Abstract translation: 具有辐射接收器和辐射入射面的辐射接收器装置,其中所述辐射接收器包括检测近红外线中的目标波长的辐射的有源区域,光学元件布置在所述辐射入射面和所述辐射接收器之间, 光学元件的光轴延伸穿过辐射接收器,光学元件相对于辐射接收器成形和布置,使得以与光轴成大于或等于40°的角度入射在辐射入射面上的辐射 ,最多10%入射到辐射接收器上,并且在辐射接收器和辐射入射面之间形成可见光滤光器。
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公开(公告)号:US20150226839A1
公开(公告)日:2015-08-13
申请号:US14429467
申请日:2013-09-19
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor: Stefan Brandl , Hubert Halbritter
IPC: G01S7/481 , H01L31/0232 , H01L33/58 , G01S17/02
CPC classification number: G01S7/4813 , G01S7/4814 , G01S7/4816 , G01S17/026 , H01L25/167 , H01L31/0232 , H01L31/02325 , H01L31/02327 , H01L31/173 , H01L33/486 , H01L33/58 , H01L2224/48091 , H01L2924/00014
Abstract: An optoelectronic device includes an optoelectronic component that generates or receives radiation, a frame and an optical element, wherein the frame extends in a vertical direction between a radiation passage side and a rear side; an opening, in which the component is arranged, is formed in the frame; the optical element covers the component in a plan view of the radiation passage side; and the optical element is a Fresnel lens or a Fresnel zone plate.
Abstract translation: 光电子器件包括产生或接收辐射的光电子部件,框架和光学元件,其中框架在辐射通道侧和后侧之间沿垂直方向延伸; 在所述框架中形成有构成所述部件的开口部; 光学元件在辐射通道侧的平面图中覆盖该部件; 并且该光学元件是菲涅尔透镜或菲涅耳带片。
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公开(公告)号:US12254816B2
公开(公告)日:2025-03-18
申请号:US17791875
申请日:2020-12-14
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: Hubert Halbritter , Jens Richter , Kilian Regau , Patrick Hörner
IPC: G09G3/32 , G09G3/3258
Abstract: A picture element for a display device includes a first and a second supply connection, a light-emitting semiconductor device arranged between the first and the second supply terminal, and a comparison unit having a first and a second input and an output. The comparison unit is configured to adjust a voltage at the output in dependence on a comparison of a voltage applied to the first input and a voltage applied to the second input. The picture element also includes a supply switch-configured to control a current flow between the first and the second supply terminal via the light-emitting semiconductor device depending on the voltage applied at the output of the comparison unit. The picture element further includes a selection input, a data input, a memory element and a control switch.
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公开(公告)号:US11825244B2
公开(公告)日:2023-11-21
申请号:US17234311
申请日:2021-04-19
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: Jörg Erich Sorg , Hubert Halbritter , Ann Russell
CPC classification number: H04N9/3161 , G02B27/0172 , H04N9/3155 , H04N9/3164 , G02B2027/0178
Abstract: A planar light circuit comprises a substrate and a first pixel. The first pixel comprises a first number N of laser diodes, a first waveguide located on the substrate, a first number N of inlets which couple the first number N of laser diodes to the first waveguide and a first outlet. The first waveguide couples the first number N of inlets to the first outlet.
An arrangement comprises the planar light circuit. The arrangement is realized as data glasses.-
公开(公告)号:US11610868B2
公开(公告)日:2023-03-21
申请号:US17039097
申请日:2020-09-30
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: Peter Brick , Jean-Jacques Drolet , Hubert Halbritter , Laura Kreiner , Thomas Schwarz , Julia Stolz
IPC: H01L25/075 , H01L33/60 , H01L33/50 , H01L33/24 , H01L33/32
Abstract: The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.
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