公开(公告)号：US20150226839A1

公开(公告)日：2015-08-13

申请号：US14429467

申请日：2013-09-19

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Stefan Brandl ,  Hubert Halbritter

IPC: G01S7/481 ,  H01L31/0232 ,  H01L33/58 ,  G01S17/02

CPC classification number: G01S7/4813 ,  G01S7/4814 ,  G01S7/4816 ,  G01S17/026 ,  H01L25/167 ,  H01L31/0232 ,  H01L31/02325 ,  H01L31/02327 ,  H01L31/173 ,  H01L33/486 ,  H01L33/58 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: An optoelectronic device includes an optoelectronic component that generates or receives radiation, a frame and an optical element, wherein the frame extends in a vertical direction between a radiation passage side and a rear side; an opening, in which the component is arranged, is formed in the frame; the optical element covers the component in a plan view of the radiation passage side; and the optical element is a Fresnel lens or a Fresnel zone plate.

Abstract translation: 光电子器件包括产生或接收辐射的光电子部件，框架和光学元件，其中框架在辐射通道侧和后侧之间沿垂直方向延伸; 在所述框架中形成有构成所述部件的开口部; 光学元件在辐射通道侧的平面图中覆盖该部件; 并且该光学元件是菲涅尔透镜或菲涅耳带片。

公开(公告)号：US20170179016A1

公开(公告)日：2017-06-22

申请号：US15327297

申请日：2015-07-22

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Stefan Brandl ,  Tilman Eckert

IPC: H01L23/498 ,  H01L21/48 ,  H01S5/022 ,  H01L23/00 ,  H01L33/62

CPC classification number: H01L23/49838 ,  H01L21/4846 ,  H01L23/49811 ,  H01L23/49894 ,  H01L24/32 ,  H01L24/83 ,  H01L33/62 ,  H01L2224/32221 ,  H01L2224/83801 ,  H01L2924/0002 ,  H01L2924/05042 ,  H01L2924/05442 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/15787 ,  H01L2933/0066 ,  H01S5/02268 ,  H01S5/02272 ,  H01L2924/00

Abstract: A carrier for an electrical component, including a substrate having a surface, with an electrically conductive contact zone arranged on the surface of the substrate, a solder pad disposed on the contact zone, and a solder stop structure disposed laterally next to the solder pad. The solder stop structure has a surface that is less wettable with liquid solder than a surface of the contact zone. The solder stop structure subdivides the contact zone into a first zone region and a second zone region, with the first zone region having the solder pad. The solder stop structure extends over a portion of a total length of the contact zone such that the contact zone has a free connecting region that is free of the solder stop structure. The first and second zone regions are connected to one another by means of the free connecting region.

公开(公告)号：US20170025574A1

公开(公告)日：2017-01-26

申请号：US15121072

申请日：2015-03-12

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Tilman Eckert ,  Stefan Brandl

IPC: H01L33/22 ,  H01L33/62 ,  H01L33/10 ,  H01L33/44

CPC classification number: H01L33/22 ,  H01L33/10 ,  H01L33/44 ,  H01L33/58 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48471 ,  H01L2224/49113 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01L2924/00014

Abstract: An optoelectronic semiconductor element may include at least one LED chip which emits infrared radiation via a top side during operation. The radiation has a global intensity maximum at wavelengths between 800 nm and 1100 nm. The radiation has, at most 5% of the intensity of the intensity maximum at a limit wavelength of 750 nm. The radiation has a visible red light component. The semiconductor element may further include a filter element, which is arranged directly or indirectly on the top side of the LED chip and which has a transmissivity of at most 5% for the visible red light component of the LED chip, wherein the transmissivity of the filter element is at least 80%, at least in part, for wavelengths between the limit wavelength and 1100 nm, and a radiation exit surface provided for emitting the filtered radiation.

Abstract translation: 光电半导体元件可以包括在操作期间经由顶侧发射红外辐射的至少一个LED芯片。 辐射在800nm至1100nm之间的波长处具有全局强度最大值。 在750nm的极限波长处，辐射具有最大强度的5％。 辐射具有可见的红光分量。 半导体元件还可以包括直接或间接地布置在LED芯片的顶侧上并且对于LED芯片的可见红光分量具有至多5％的透射率的滤光元件，其中透射率 滤波器元件至少部分地为极限波长和1100nm之间的波长以及用于发射滤波的辐射的辐射出射表面的至少80％。

公开(公告)号：US10008440B2

公开(公告)日：2018-06-26

申请号：US15327297

申请日：2015-07-22

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Stefan Brandl ,  Tilman Eckert

IPC: H01L23/498 ,  H01L23/00 ,  H01L33/62 ,  H01S5/022 ,  H01L21/48

CPC classification number: H01L23/49838 ,  H01L21/4846 ,  H01L23/49811 ,  H01L23/49894 ,  H01L24/32 ,  H01L24/83 ,  H01L33/62 ,  H01L2224/32221 ,  H01L2224/83801 ,  H01L2924/0002 ,  H01L2924/05042 ,  H01L2924/05442 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/15787 ,  H01L2933/0066 ,  H01S5/02268 ,  H01S5/02272

Abstract: A carrier for an electrical component, including a substrate having a surface, with an electrically conductive contact zone arranged on the surface of the substrate, a solder pad disposed on the contact zone, and a solder stop structure disposed laterally next to the solder pad. The solder stop structure has a surface that is less wettable with liquid solder than a surface of the contact zone. The solder stop structure subdivides the contact zone into a first zone region and a second zone region, with the first zone region having the solder pad. The solder stop structure extends over a portion of a total length of the contact zone such that the contact zone has a free connecting region that is free of the solder stop structure. The first and second zone regions are connected to one another by means of the free connecting region.

公开(公告)号：US09722141B2

公开(公告)日：2017-08-01

申请号：US15121072

申请日：2015-03-12

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Tilman Eckert ,  Stefan Brandl

IPC: H01L33/10 ,  H01L33/44 ,  H01L33/22 ,  H01L33/58 ,  H01L33/62

CPC classification number: H01L33/22 ,  H01L33/10 ,  H01L33/44 ,  H01L33/58 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48471 ,  H01L2224/49113 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01L2924/00014

Abstract: An optoelectronic semiconductor element may include at least one LED chip which emits infrared radiation via a top side during operation. The radiation has a global intensity maximum at wavelengths between 800 nm and 1100 nm. The radiation has, at most 5% of the intensity of the intensity maximum at a limit wavelength of 750 nm. The radiation has a visible red light component. The semiconductor element may further include a filter element, which is arranged directly or indirectly on the top side of the LED chip and which has a transmissivity of at most 5% for the visible red light component of the LED chip, wherein the transmissivity of the filter element is at least 80%, at least in part, for wavelengths between the limit wavelength and 1100 nm, and a radiation exit surface provided for emitting the filtered radiation.

公开(公告)号：US09671490B2

公开(公告)日：2017-06-06

申请号：US14429467

申请日：2013-09-19

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Stefan Brandl ,  Hubert Halbritter

IPC: G01S7/481 ,  H01L25/16 ,  H01L31/0232 ,  H01L33/58 ,  G01S17/02 ,  H01L33/48

CPC classification number: G01S7/4813 ,  G01S7/4814 ,  G01S7/4816 ,  G01S17/026 ,  H01L25/167 ,  H01L31/0232 ,  H01L31/02325 ,  H01L31/02327 ,  H01L31/173 ,  H01L33/486 ,  H01L33/58 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: An optoelectronic device includes an optoelectronic component that generates or receives radiation, a frame and an optical element, wherein the frame extends in a vertical direction between a radiation passage side and a rear side; an opening, in which the component is arranged, is formed in the frame; the optical element covers the component in a plan view of the radiation passage side; and the optical element is a Fresnel lens or a Fresnel zone plate.