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    Optoelectronic device
    32.
    发明授权
    Optoelectronic device 有权
    光电器件

    公开(公告)号：US09459383B2

    公开(公告)日：2016-10-04

    申请号：US14430202

    申请日：2013-09-13

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Alexander Linkov ,  Matthias Sabathil

    IPC: H01L33/50 ,  G02B5/02 ,  H01L33/58 ,  H01L33/56

    CPC classification number: G02B5/0294 ,  G02B5/0242 ,  G02B5/0247 ,  G02B5/0263 ,  G02B5/0278 ,  H01L33/502 ,  H01L33/504 ,  H01L33/505 ,  H01L33/56 ,  H01L33/58 ,  H01L2933/0091

    Abstract: The invention relates to an optoelectronic device (101), comprising: a semiconductor layer sequence (103) comprising an emitter layer (105) for emitting electromagnetic radiation, a converter (113) for converting electromagnetic radiation with a first wavelength into an electromagnetic radiation with a second wavelength which differs from the first wavelength, a scattering body (109) for scattering at least a part of the electromagnetic radiation emitted by the emitter layer (105) in the direction of the converter (113) in order to convert at least a part of the emitted electromagnetic radiation, wherein the scattering body (109) comprises a positive, temperature-dependent scattering cross-section and so, as the temperature increases, scattering of the electromagnetic radiation in the scattering body (109) in the direction of the converter can be increased. The invention also relates to a scattering body (109).

    Abstract translation: 本发明涉及一种光电子器件（101），包括：半导体层序列（103），包括用于发射电磁辐射的发射极层（105），用于将具有第一波长的电磁辐射转换成电磁辐射的转换器（113） 与第一波长不同的第二波长，散射体（109），用于在转换器（113）的方向上散射由发射极层（105）发射的电磁辐射的至少一部分，以便将至少一个 发射的电磁辐射的一部分，其中散射体（109）包括正的温度依赖的散射截面，因此随着温度的升高，散射体（109）中的电磁辐射在 转换器可以增加。 本发明还涉及散射体（109）。

    Optoelectronic Semiconductor Body and Method for Producing the Same
    37.
    发明申请
    Optoelectronic Semiconductor Body and Method for Producing the Same 有权
    光电半导体及其制造方法

    公开(公告)号：US20130221392A1

    公开(公告)日：2013-08-29

    申请号：US13862096

    申请日：2013-04-12

    Applicant: Osram Opto Semiconductors GmbH

    Inventor： Karl Engl ,  Patrick Rode ,  Lutz Hoeppel ,  Matthias Sabathil

    IPC: H01L33/58

    CPC classification number: H01L33/58 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An optoelectronic semiconductor body includes a semiconductor layer sequence which has an active layer suitable for generating electromagnetic radiation, and a first and a second electrical connecting layer. The semiconductor body is provided for emitting electromagnetic radiation from a front side. The first and the second electrical connecting layer are arranged at a rear side opposite the front side and are electrically insulated from one another by means of a separating layer. The first electrical connecting layer, the second electrical connecting layer and the separating layer laterally overlap and a partial region of the second electrical connecting layer extends from the rear side through a breakthrough in the active layer in the direction of the front side. Furthermore, a method for producing such an optoelectronic semiconductor body is specified.

    Abstract translation: 光电半导体本体包括具有适于产生电磁辐射的有源层的半导体层序列和第一和第二电连接层。 半导体本体被设置用于从前侧发射电磁辐射。 第一和第二电连接层布置在与前侧相对的后侧，并且通过分离层彼此电绝缘。 第一电连接层，第二电连接层和分离层横向重叠，并且第二电连接层的部分区域从后侧沿着正面的方向通过有源层中的穿透而延伸。 此外，规定了这种光电子半导体体的制造方法。

    Method of producing an optoelectronic component and optoelectronic component
    38.
    发明授权
    Method of producing an optoelectronic component and optoelectronic component 有权

    公开(公告)号：US10396260B2

    公开(公告)日：2019-08-27

    申请号：US15574602

    申请日：2016-05-13

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Matthias Sabathil ,  Jürgen Moosburger ,  Frank Singer

    IPC: H01L33/62 ,  H01L21/683 ,  H01L21/66 ,  H01L25/075 ,  H01L33/00 ,  H01L33/54 ,  H01L33/60 ,  H01L33/32

    Abstract: A method of producing an optoelectronic component includes providing a wafer substrate that includes a light-emitting layer sequence, singulating the wafer substrate having the layer sequence into semiconductor components, applying the semiconductor components to an intermediate carrier, arranging a potting material on the intermediate carrier such that the potting material laterally surrounds the semiconductor components and is in direct contact, at least in places, with side surfaces of the semiconductor components, arranging one contact on one semiconductor component and the potting material, wherein one contact is arranged on a side of the semiconductor component and the potting material remote from the intermediate carrier, connecting the component to a carrier element, on a side of the semiconductor components remote from the intermediate carrier, removing the intermediate carrier and the wafer substrate of the semiconductor components, and bringing the semiconductor components into electrical contact by the contacts and the potting material.

    Light-Emitting Module and Display Device Comprising Same
    40.
    发明申请
    Light-Emitting Module and Display Device Comprising Same 审中-公开

    公开(公告)号：US20190103516A1

    公开(公告)日：2019-04-04

    申请号：US16086828

    申请日：2017-03-29

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Jürgen Moosburger ,  Matthias Sabathil ,  Frank Singer

    IPC: H01L33/24 ,  H05B33/08 ,  H01L33/50

    Abstract: A light-emitting module and a display device including the same are disclosed. In an embodiment a light-emitting module includes a plurality of emission regions configured to emit light, at least one first emission region and at least one second emission region of a first type configured to emit light of a first color locus and at least one first emission region and at least one second emission region of a second type configured to emit light of a second color locus and a control device for supplying the emission regions with current, wherein the emission regions are arranged on a common semiconductor chip, wherein the first color locus is different from the second color locus, wherein the first and second emission regions of the first type are adjacent to one another, and wherein the first and second emission regions of the second type are adjacent to one another.

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