公开(公告)号：EP1620878A4

公开(公告)日：2008-03-26

申请号：EP04759531

申请日：2004-04-14

Applicant: SAINT GOBAIN CERAMICS

Inventor： NARENDAR YESHWANTH ,  BUCKLEY RICHARD F ,  HAERLE ANDREW G ,  HENGST RICHARD R

IPC: H01L21/311 ,  C01B31/36 ,  C04B35/565 ,  C04B35/622 ,  C04B41/45 ,  C04B41/80 ,  H01L21/673

CPC classification number: C04B41/459 ,  C01B32/956 ,  C01P2006/80 ,  C04B35/565 ,  C04B35/62222 ,  C04B41/009 ,  C04B41/80 ,  C04B2235/3826 ,  C04B2235/428 ,  C04B2235/72 ,  C04B2235/80 ,  C04B2235/963 ,  H01L21/6733 ,  Y10T428/12576 ,  Y10T428/26 ,  C04B41/4519 ,  C04B41/4556 ,  C04B41/5035

Abstract: Various semiconductor processing components and methods for forming same are disclosed. In one embodiment a semiconductor processing component is formed of SiC, and an outer surface portion of the component has a surface impurity level that is not greater than 10 times a bulk impurity level. In another embodiment a method for treating a semiconductor processing component includes exposing the component to a halogen gas at an elevated temperature, oxidizing the component to form an oxide layer, and removing the oxide layer.