公开(公告)号：JP2013082625A

公开(公告)日：2013-05-09

申请号：JP2013011560

申请日：2013-01-24

Applicant: Saint-Gobain Ceramics & Plastics Inc ,  サン−ゴバン セラミックス アンド プラスティクス,インコーポレイティド

Inventor： HAERLE ANDREW G ,  PERRY EDWARD A

IPC: C04B35/565

CPC classification number: C04B35/565 ,  C04B2235/3821 ,  C04B2235/3826 ,  C04B2235/421 ,  C04B2235/5436 ,  C04B2235/5472 ,  C04B2235/656 ,  C04B2235/72 ,  C04B2235/722 ,  C04B2235/77 ,  C04B2235/96 ,  C04B2235/9607

Abstract: PROBLEM TO BE SOLVED: To provide a method for producing a recrystallized silicon carbide body having resistivity of not less than about 1E5 Ωcm and nitrogen atoms of not greater than about 200 ppm.SOLUTION: The method includes steps of: forming a mixture by combining coarse silicon carbide particles and fine silicon carbide particles having an average particle size less than the average particle size of the coarse silicon carbide particles; forming the mixture to form a green article; and heating the green article to a sublimation temperature in an atmosphere comprising an inert gas and having a reduced pressure of not greater than about 25 Torr to form the recrystallized silicon carbide body.

Abstract translation: 要解决的问题：提供一种制造电阻率不小于约1E5Ωcm，氮原子不大于约200ppm的再结晶碳化硅体的方法。 该方法包括以下步骤：通过将粗碳化硅颗粒和平均粒度小于粗碳化硅颗粒的平均粒径的细碳化硅颗粒结合来形成混合物; 形成混合物以形成绿色制品; 并在包含惰性气体的气氛中并且具有不大于约25乇的减压的气氛下将生坯加热到升华温度，以形成再结晶的碳化硅体。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2010219535A

公开(公告)日：2010-09-30

申请号：JP2010058192

申请日：2010-03-15

Applicant: Saint-Gobain Ceramics & Plastics Inc ,  サン−ゴバン セラミックス アンド プラスティクス,インコーポレイティド

Inventor： NARENDAR YESHWANTH ,  BUCKLEY RICHARD F ,  HAERLE ANDREW G ,  HENGST RICHARD R

IPC: H01L21/22 ,  C01B31/36 ,  C04B35/565 ,  C04B35/622 ,  C04B41/45 ,  C04B41/80 ,  C23C16/42 ,  H01L21/02 ,  H01L21/205 ,  H01L21/265 ,  H01L21/324 ,  H01L21/673 ,  H01L21/683

CPC classification number: C04B41/459 ,  C01B32/956 ,  C01P2006/80 ,  C04B35/565 ,  C04B35/62222 ,  C04B41/009 ,  C04B41/80 ,  C04B2235/3826 ,  C04B2235/428 ,  C04B2235/72 ,  C04B2235/80 ,  C04B2235/963 ,  H01L21/6733 ,  Y10T428/12576 ,  Y10T428/26 ,  C04B41/4519 ,  C04B41/4556 ,  C04B41/5035

Abstract: PROBLEM TO BE SOLVED: To provide various semiconductor processing components, and a method for forming the same. SOLUTION: This semiconductor processing component is formed of SiC, and an outer surface portion of the semiconductor processing component has a surface impurity level that is not greater than 10 times an internal impurity level. This method for treating a semiconductor processing component includes exposing the semiconductor processing component to a halogen gas at an elevated temperature, oxidizing the semiconductor processing component to form an oxide layer, and removing the oxide layer. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供各种半导体处理部件及其形成方法。 解决方案：该半导体处理部件由SiC形成，并且半导体处理部件的外表面部分具有不大于内部杂质水平的10倍的表面杂质水平。 用于处理半导体处理部件的方法包括：将高温下的半导体处理部件暴露于卤素气体，氧化半导体处理部件，形成氧化物层，除去氧化物层。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2010103554A

公开(公告)日：2010-05-06

申请号：JP2009295992

申请日：2009-12-25

Applicant: Saint-Gobain Ceramics & Plastics Inc ,  サン−ゴバン セラミックス アンド プラスティクス,インコーポレイティド

Inventor： BUCKLEY RICHARD F ,  HAERLE ANDREW G ,  CHANG HAN C

IPC: H01L21/673

CPC classification number: H01L21/67326

Abstract: PROBLEM TO BE SOLVED: To provide a wafer carrier which is suitable for improved processing operations that provide improved device yield and low defectivity. SOLUTION: The wafer carrier 1 for supporting a plurality of wafers vertically includes at least first, second, and third support members 10, 12 and 14, and a plurality of slots 16 for receiving the plurality of wafers. The first, the second, and the third support members 10, 12 and 14 are provided so as to support and contact the wafers, and each slot is made up of first, second and third slot segments 18, 20 and 22, respectively, each of which respectively being extended along the first, the second and the third support members 10, 12, and 14. A cradle 2 is comprised of silicon carbide and has an oxide layer covering the silicon carbide. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种适用于提高设备产量和低缺陷性的改进处理操作的晶片载体。 解决方案：用于支撑多个晶片的晶片载体1垂直地包括至少第一，第二和第三支撑构件10,12和14以及用于容纳多个晶片的多个狭槽16。 第一，第二和第三支撑构件10,12和14设置成支撑和接触晶片，并且每个槽分别由第一，第二和第三槽段18,20和22组成，每个 其分别沿着第一，第二和第三支撑构件10,12和14延伸。支架2由碳化硅构成，并且具有覆盖碳化硅的氧化物层。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：WO2007047547A3

公开(公告)日：2007-06-14

申请号：PCT/US2006040295

申请日：2006-10-13

Applicant: SAINT GOBAIN CERAMICS ,  HAERLE ANDREW G ,  WANG JUN

Inventor： HAERLE ANDREW G ,  WANG JUN

IPC: C09K3/14 ,  C01F7/02 ,  C09G1/02

CPC classification number: C09K3/1463 ,  B82Y30/00 ,  C01F7/02 ,  C01P2002/02 ,  C01P2004/10 ,  C01P2004/20 ,  C01P2004/54 ,  C01P2004/62 ,  C01P2004/64 ,  C01P2006/10 ,  C01P2006/12 ,  C09K3/1409

Abstract: An abrasive particulate material is disclosed that includes alumina particles. The alumina particles include a transition alumina and at least 5.0wt% of an amorphous phase. The transition alumina particles also have a density not greater than about 3.20g/cm 3

Abstract translation: 公开了一种包括氧化铝颗粒的磨料颗粒材料。 氧化铝颗粒包括过渡氧化铝和至少5.0wt％的非晶相。 过渡氧化铝颗粒也具有不大于约3.20g / cm 3的密度

公开(公告)号：WO2009102615A3

公开(公告)日：2009-10-22

申请号：PCT/US2009033222

申请日：2009-02-05

Applicant: SAINT GOBAIN CERAMICS

Inventor： HAERLE ANDREW G ,  WANG JUN

IPC: C04B35/50 ,  C01F17/00 ,  C09G1/02 ,  H01L21/304

CPC classification number: C01F17/0043 ,  B82Y30/00 ,  C01P2004/03 ,  C01P2004/50 ,  C01P2004/54 ,  C01P2004/64 ,  C01P2006/10 ,  C01P2006/12 ,  C09K3/1409 ,  C09K3/1463

Abstract: A particulate material comprising cerium oxide particles having a secondary particle size distribution in a range of 80 nm to 199 nm and a density of at least 6.6 g/cm3.

Abstract translation: 一种颗粒材料，其包含具有80nm至199nm范围内的二次粒径分布和至少6.6g / cm 3的密度的氧化铈颗粒。

公开(公告)号：WO0125167A8

公开(公告)日：2001-09-27

申请号：PCT/US9931018

申请日：1999-12-23

Applicant: SAINT GOBAIN CERAMICS

Inventor： HAERLE ANDREW G ,  MEDER GERALD S

IPC: B24C1/00 ,  B24C3/32 ,  C04B41/53 ,  C04B41/91 ,  C23C16/44 ,  H01L21/00 ,  B08B7/02 ,  C23C16/02

CPC classification number: B24C1/086 ,  B24C1/003 ,  B24C3/322 ,  C04B41/009 ,  C04B41/53 ,  C04B41/91 ,  C23C16/4407 ,  H01L21/67028 ,  H01L21/67069 ,  Y10S134/902 ,  C04B41/5346 ,  C04B41/5353 ,  C04B35/00 ,  C04B35/565

Abstract: A method for cleaning ceramic workpieces such as SiC boats used in semiconductor fabrication is disclosed. The method comprises washing a virgin or used ceramic workpiece with a strong acid and then using a pelletized CO2 cleaning process on the acid-washed component. The inventive method has been found to produce a workpiece having a very low level of metallic and particulate contaminants on its surface.

Abstract translation: 公开了一种用于清洁半导体制造中使用的诸如SiC舟皿的陶瓷工件的方法。 该方法包括用强酸洗涤未加工或用过的陶瓷工件，然后在酸洗组分上使用颗粒状二氧化碳清洗方法。 已经发现本发明的方法产生在其表面上具有非常低水平的金属和颗粒污染物的工件。

公开(公告)号：WO2004095545A3

公开(公告)日：2005-05-12

申请号：PCT/US2004006847

申请日：2004-03-05

Applicant: SAINT GOBAIN CERAMICS ,  BUCKLEY RICHARD F ,  HAERLE ANDREW G ,  CHANG HAN C

Inventor： BUCKLEY RICHARD F ,  HAERLE ANDREW G ,  CHANG HAN C

IPC: H01L21/673 ,  H01L21/00

CPC classification number: H01L21/67326

Abstract: A wafer carrier for supporting a plurality of wafers, including a plurality of slots provided in a cradle, the cradle being formed of silicon carbide and having an oxide layer overlying the silicon carbide.

Abstract translation: 一种用于支撑多个晶片的晶片载体，包括设置在支架中的多个槽，支架由碳化硅形成并具有覆盖碳化硅的氧化物层。

公开(公告)号：WO0209161A3

公开(公告)日：2002-06-13

申请号：PCT/US0123047

申请日：2001-07-23

Applicant: SAINT GOBAIN CERAMICS

Inventor： HAERLE ANDREW G

IPC: H01L21/304 ,  B08B3/08 ,  B08B7/00 ,  B08B7/02 ,  C04B41/53 ,  C04B41/91 ,  B24C1/00 ,  H01L21/00

CPC classification number: C04B41/009 ,  B08B3/08 ,  B08B7/00 ,  B08B7/02 ,  C04B41/53 ,  C04B41/91 ,  C04B35/00 ,  C04B35/565

Abstract: A method for cleaning ceramic workpieces such as SiC boats used in semiconductor fabrication is disclosed. The method comprises washing a virgin or used ceramic workpiece with a chemical stripping agent and then using a pelletized CO2 cleaning process on the acid-washed component. The inventive method has been found to produce a workpiece having a very low level of metallic and particulate contaminants on its surface.

Abstract translation: 公开了一种用于清洁诸如在半导体制造中使用的SiC舟的陶瓷工件的方法。 该方法包括用化学剥离剂清洗未使用过的或使用过的陶瓷工件，然后在酸洗部件上使用粒化CO2清洁工艺。 已经发现本发明的方法产生在其表面上具有非常低水平的金属和颗粒污染物的工件。

公开(公告)号：WO2012092361A3

公开(公告)日：2013-03-28

申请号：PCT/US2011067565

申请日：2011-12-28

Applicant: SAINT GOBAIN CERAMICS

Inventor： HAERLE ANDREW G ,  WANG JUN ,  WISS FREDERIC

IPC: C09K3/14 ,  B24B1/00

CPC classification number: C09K3/1409 ,  B24B37/044 ,  C01G25/02 ,  C01P2002/52 ,  C01P2002/76 ,  C01P2004/50 ,  C01P2004/51 ,  C01P2004/62 ,  C01P2004/64 ,  C01P2006/10 ,  C01P2006/12 ,  C01P2006/16 ,  C01P2006/22 ,  C01P2006/40 ,  C09G1/02 ,  H01L21/304 ,  Y10T428/2982

Abstract: A polishing slurry can include zirconia particles. The polishing slurry can be used to polish conductive and insulating materials, and is particularly well suited for polishing oxide materials as well as metals. The characteristics of the zirconia particles can affect the polishing of workpieces. By selecting the proper characteristics, the polishing slurry can have a good material removal rate while still providing an acceptable surface finish. The zirconia particles can be used as a replacement for, or in conjunction with, ceria or other abrasive particles. The content of zirconia particles in the polishing slurry may be less than a comparable polishing slurry having silica or alumina particles.

Abstract translation: 抛光浆料可以包括氧化锆颗粒。 抛光浆料可用于抛光导电和绝缘材料，并且特别适用于抛光氧化物材料以及金属。 氧化锆颗粒的特性可影响工件的抛光。 通过选择适当的特性，抛光浆料可以具有良好的材料去除率，同时仍然提供可接受的表面光洁度。 氧化锆颗粒可用作二氧化铈或其他磨料颗粒的替代物或与其结合使用。 抛光浆料中的氧化锆颗粒的含量可以小于具有二氧化硅或氧化铝颗粒的可比较的抛光浆料。

公开(公告)号：WO2009058841A3

公开(公告)日：2009-11-26

申请号：PCT/US2008081555

申请日：2008-10-29

Applicant: SAINT GOBAIN CERAMICS

Inventor： HAERLE ANDREW G ,  PERRY EDWARD A

IPC: C04B35/573

CPC classification number: C04B35/565 ,  C04B2235/3821 ,  C04B2235/3826 ,  C04B2235/421 ,  C04B2235/5436 ,  C04B2235/5472 ,  C04B2235/656 ,  C04B2235/72 ,  C04B2235/722 ,  C04B2235/77 ,  C04B2235/96 ,  C04B2235/9607

Abstract: A recrystallized silicon carbide body is provided that has a resistivity of not less than about 1?5 O cm and a nitrogen content comprising nitrogen atoms bonded within the body, wherein the nitrogen content is not greater than about 200 ppm.

Abstract translation: 提供了具有不小于约1〜5Ocm的电阻率和包含结合在体内的氮原子的氮含量的再结晶碳化硅体，其中氮含量不大于约200ppm。