公开(公告)号：JP2010219535A

公开(公告)日：2010-09-30

申请号：JP2010058192

申请日：2010-03-15

Applicant: Saint-Gobain Ceramics & Plastics Inc ,  サン−ゴバン セラミックス アンド プラスティクス,インコーポレイティド

Inventor： NARENDAR YESHWANTH ,  BUCKLEY RICHARD F ,  HAERLE ANDREW G ,  HENGST RICHARD R

IPC: H01L21/22 ,  C01B31/36 ,  C04B35/565 ,  C04B35/622 ,  C04B41/45 ,  C04B41/80 ,  C23C16/42 ,  H01L21/02 ,  H01L21/205 ,  H01L21/265 ,  H01L21/324 ,  H01L21/673 ,  H01L21/683

CPC classification number: C04B41/459 ,  C01B32/956 ,  C01P2006/80 ,  C04B35/565 ,  C04B35/62222 ,  C04B41/009 ,  C04B41/80 ,  C04B2235/3826 ,  C04B2235/428 ,  C04B2235/72 ,  C04B2235/80 ,  C04B2235/963 ,  H01L21/6733 ,  Y10T428/12576 ,  Y10T428/26 ,  C04B41/4519 ,  C04B41/4556 ,  C04B41/5035

Abstract: PROBLEM TO BE SOLVED: To provide various semiconductor processing components, and a method for forming the same. SOLUTION: This semiconductor processing component is formed of SiC, and an outer surface portion of the semiconductor processing component has a surface impurity level that is not greater than 10 times an internal impurity level. This method for treating a semiconductor processing component includes exposing the semiconductor processing component to a halogen gas at an elevated temperature, oxidizing the semiconductor processing component to form an oxide layer, and removing the oxide layer. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供各种半导体处理部件及其形成方法。 解决方案：该半导体处理部件由SiC形成，并且半导体处理部件的外表面部分具有不大于内部杂质水平的10倍的表面杂质水平。 用于处理半导体处理部件的方法包括：将高温下的半导体处理部件暴露于卤素气体，氧化半导体处理部件，形成氧化物层，除去氧化物层。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：WO2006023894A3

公开(公告)日：2006-06-15

申请号：PCT/US2005029889

申请日：2005-08-23

Applicant: SAINT GOBAIN CERAMICS

Inventor： NARENDAR YESHWANTH ,  SIMPSON MATTHEW A ,  HENGST RICHARD R

IPC: C23C16/44

CPC classification number: C04B35/16 ,  C04B41/009 ,  C04B41/5024 ,  C04B41/5027 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3427 ,  C04B2235/80 ,  C04B2235/9607 ,  C04B2235/9692 ,  C23C14/08 ,  C23C16/029 ,  C23C16/40 ,  C23C16/401 ,  C23C16/4404 ,  C23C16/4581 ,  H01J37/32477 ,  H01L21/673 ,  Y10T428/30 ,  C04B35/10 ,  C04B35/565 ,  C04B35/52 ,  C04B2103/0021

Abstract: A semiconductor processing component includes a substrate and a layer overlying the substrate. The layer has a composition ReA y O 1.5+2y , wherein Re is Y, La, a Lanthanoid series element, or a combination thereof, A is (Si 1-a Ge a ), 0.25 y 1.2, and 0 a 1.

Abstract translation: 半导体处理部件包括衬底和覆盖衬底的层。 该层具有组成，其中Re是Y，La，镧系元素，或它们的组合，A是（Si < 1-a a ），0.25y 1.2和0 a 1。

公开(公告)号：WO2006023894A9

公开(公告)日：2007-04-19

申请号：PCT/US2005029889

申请日：2005-08-23

Applicant: SAINT GOBAIN CERAMICS

Inventor： NARENDAR YESHWANTH ,  SIMPSON MATTHEW A ,  HENGST RICHARD R

IPC: C23C16/44

CPC classification number: C04B35/16 ,  C04B41/009 ,  C04B41/5024 ,  C04B41/5027 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3427 ,  C04B2235/80 ,  C04B2235/9607 ,  C04B2235/9692 ,  C23C14/08 ,  C23C16/029 ,  C23C16/40 ,  C23C16/401 ,  C23C16/4404 ,  C23C16/4581 ,  H01J37/32477 ,  H01L21/673 ,  Y10T428/30 ,  C04B35/10 ,  C04B35/565 ,  C04B35/52 ,  C04B2103/0021

Abstract: A semiconductor processing component includes a substrate and a layer overlying the substrate. The layer has a composition ReA y O 1.5+2y , wherein Re is Y, La, a Lanthanoid series element, or a combination thereof, A is (Si 1-a Ge a ), 0.25 y 1.2, and 0 a 1.

Abstract translation: 半导体处理部件包括衬底和覆盖衬底的层。 该层具有组成，其中Re是Y，La，镧系元素，或它们的组合，A是（Si < 1-a a ），0.25y 1.2和0 a 1。

公开(公告)号：WO2004093150A2

公开(公告)日：2004-10-28

申请号：PCT/US2004011507

申请日：2004-04-14

Applicant: SAINT GOBAIN CERAMICS ,  NARENDAR YESHWANTH ,  BUCKLEY RICHARD F ,  HAERLE ANDREW G ,  HENGST RICHARD R

Inventor： NARENDAR YESHWANTH ,  BUCKLEY RICHARD F ,  HAERLE ANDREW G ,  HENGST RICHARD R

IPC: C01B31/36 ,  C04B35/565 ,  C04B35/622 ,  C04B41/45 ,  C04B41/80 ,  H01L21/673 ,  H01L

CPC classification number: C04B41/459 ,  C01B32/956 ,  C01P2006/80 ,  C04B35/565 ,  C04B35/62222 ,  C04B41/009 ,  C04B41/80 ,  C04B2235/3826 ,  C04B2235/428 ,  C04B2235/72 ,  C04B2235/80 ,  C04B2235/963 ,  H01L21/6733 ,  Y10T428/12576 ,  Y10T428/26 ,  C04B41/4519 ,  C04B41/4556 ,  C04B41/5035

Abstract: Various semiconductor processing components and methods for forming same are disclosed. In one embodiment a semiconductor processing component is formed of SiC, and an outer surface portion of the component has a surface impurity level that is not greater than 10 times a bulk impurity level. In another embodiment a method for treating a semiconductor processing component includes exposing the component to a halogen gas at an elevated temperature, oxidizing the component to form an oxide layer, and removing the oxide layer.

Abstract translation: 公开了各种半导体处理部件及其形成方法。 在一个实施例中，半导体处理部件由SiC形成，并且部件的外表面部分的表面杂质水平不大于体积杂质水平的10倍。 在另一个实施方案中，用于处理半导体处理组件的方法包括将组分在升高的温度下暴露于卤素气体，氧化组分以形成氧化物层，以及除去氧化物层。

公开(公告)号：DE60238324D1

公开(公告)日：2010-12-30

申请号：DE60238324

申请日：2002-06-05

Applicant: SAINT GOBAIN CERAMICS

Inventor： HENGST RICHARD R

IPC: H01L21/68 ,  H01L21/683 ,  C23C16/458 ,  C30B25/12 ,  C30B31/14 ,  H01L21/02 ,  H01L21/673

公开(公告)号：EP1405333A4

公开(公告)日：2009-05-20

申请号：EP02741833

申请日：2002-06-05

Applicant: SAINT GOBAIN CERAMICS

Inventor： HENGST RICHARD R

IPC: H01L21/68 ,  H01L21/683 ,  C23C16/458 ,  C30B25/12 ,  C30B31/14 ,  H01L21/02 ,  H01L21/673

CPC classification number: H01L21/67303 ,  C23C16/325 ,  C30B25/12 ,  C30B31/14 ,  H01L21/67306 ,  H01L21/67309

Abstract: A wafer boat for supporting silicon wafers. The wafer boat includes a ceramic body having at least one wafer support structure sized to support a silicon wafer thereon. A ceramic coating is disposed on a surface of the wafer slot. The ceramic coating has an impurity migration preventing thickness and a wafer contact surface. The wafer contact surface has a post coating surface finish, which substantially prevents slip in the silicon wafers.

公开(公告)号：EP1620878A4

公开(公告)日：2008-03-26

申请号：EP04759531

申请日：2004-04-14

Applicant: SAINT GOBAIN CERAMICS

Inventor： NARENDAR YESHWANTH ,  BUCKLEY RICHARD F ,  HAERLE ANDREW G ,  HENGST RICHARD R

IPC: H01L21/311 ,  C01B31/36 ,  C04B35/565 ,  C04B35/622 ,  C04B41/45 ,  C04B41/80 ,  H01L21/673

CPC classification number: C04B41/459 ,  C01B32/956 ,  C01P2006/80 ,  C04B35/565 ,  C04B35/62222 ,  C04B41/009 ,  C04B41/80 ,  C04B2235/3826 ,  C04B2235/428 ,  C04B2235/72 ,  C04B2235/80 ,  C04B2235/963 ,  H01L21/6733 ,  Y10T428/12576 ,  Y10T428/26 ,  C04B41/4519 ,  C04B41/4556 ,  C04B41/5035

Abstract: Various semiconductor processing components and methods for forming same are disclosed. In one embodiment a semiconductor processing component is formed of SiC, and an outer surface portion of the component has a surface impurity level that is not greater than 10 times a bulk impurity level. In another embodiment a method for treating a semiconductor processing component includes exposing the component to a halogen gas at an elevated temperature, oxidizing the component to form an oxide layer, and removing the oxide layer.