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公开(公告)号：FR2493346A1
公开(公告)日：1982-05-07
申请号：FR8119986
申请日：1981-10-23
Applicant: SONY CORP
Inventor： MAKINO YOSHIMI , OCHIAI YOSHITAKA , UEDAIRA SATORU , HOTAI KAZUHIDE , ASO KOICHI , HAYAKAWA MASATOSHI
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公开(公告)号：JP2551008B2
公开(公告)日：1996-11-06
申请号：JP16359487
申请日：1987-06-30
Applicant: SONY CORP
Inventor： HAYASHI KAZUHIKO , HAYAKAWA MASATOSHI , KATORI KENJI , ASO KOICHI
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公开(公告)号：JPH06116091A
公开(公告)日：1994-04-26
申请号：JP28521292
申请日：1992-09-30
Applicant: SONY CORP
Inventor： HANIYU KAZUTAKA , WATABE KOJI , OKAMOTO TSUTOMU , ASO KOICHI
Abstract: PURPOSE:To obtain a high-quality KTiOPO4 single crystal enhanced in SHG efficiency by applying a current to a seed crystal through a molten material when the single crystal is grown. CONSTITUTION:A flux K6P4O13 and a raw material KTiOP4 are placed in a platinum crucible 2, heated and melted to obtain a molten material 1. A seed crystal 3 is dipped in the molten material 1, and a platinum wire 7 to be connected to the seed crystal 3 is connected to the plus terminal of a stabilizing- current power source 8 and a platinum wire 9 to be connected to the crucible 2 to the minus terminal of the power source 8. An AC current having 0.01-200Hz frequency and 7.5-67.5mA/cm density or a DC current having 2.5-25mA/cm density is applied to the seed crystal 3 through the molten material 1 to deposit and grow the objective KTiOPO4 single crystal 10.
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公开(公告)号：JPH0552470B2
公开(公告)日：1993-08-05
申请号：JP18094284
申请日：1984-08-30
Applicant: SONY CORP
Inventor： HAYAKAWA MASATOSHI , OCHIAI YOSHITAKA , MATSUDA HIDEKI , ISHIKAWA OSAMU , HAYASHI KAZUHIKO , ASO KOICHI
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公开(公告)号：JPH0337721B2
公开(公告)日：1991-06-06
申请号：JP12348782
申请日：1982-07-15
Applicant: SONY CORP
Inventor： MATSUDA HIDEKI , ASO KOICHI , KAMIHIRA AKIRA , OCHIAI YOSHITAKA , HAYAKAWA MASATOSHI , HOTAI KAZUHIDE , HAYASHI KAZUHIKO
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Patent Agency Ranking
公开(公告)号：JPH0395742A
公开(公告)日：1991-04-22
申请号：JP23028989
申请日：1989-09-07
Applicant: SONY CORP
Inventor： HASHIMOTO SHUNICHI , OCHIAI YOSHITAKA , ASO KOICHI
IPC: G11B11/10 , G11B11/105
Abstract: PURPOSE:To attain the magneto-optical recording at a high recording density and high CN by forming artificial grid films alternately laminated with Co layers, Pt layers and/or Pd layers as a recording layer and combining the layer with a light source which radiates the light of
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公开(公告)号：JPH0380445A
公开(公告)日：1991-04-05
申请号：JP21502589
申请日：1989-08-23
Applicant: SONY CORP
Inventor： HASHIMOTO SHUNICHI , OCHIAI YOSHITAKA , ASO KOICHI
IPC: G11B11/10 , G11B11/105
Abstract: PURPOSE:To improve the coercive force of the magneto-optical recording medium by parting the artificial lattice films alternately laminated with Co layers and Pt layers and/or Pd layers to crystal grain lumps of
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公开(公告)号：JPH0274013A
公开(公告)日：1990-03-14
申请号：JP22626588
申请日：1988-09-09
Applicant: SONY CORP
Inventor： OKABE AKIHIKO , HAYASHI KAZUHIKO , HAYAKAWA MASATOSHI , ASO KOICHI
Abstract: PURPOSE:To obtain high vertical coercive force or high saturated magnetic flux density, and to maintain a high vertical anisotropic magnetic field by a method wherein a specific range of composition is provided. CONSTITUTION:This magnetic thin film is composed of a CoBtB alloy or CoB alloy, the composition is indicated by the compositional formula of (Coa, Ptb, Mc)100-xOx (provided that a, b, c and x are indicated by atomic %), the range of composition is set at a=100-b-c, 0
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公开(公告)号：JPH0269907A
公开(公告)日：1990-03-08
申请号：JP22182288
申请日：1988-09-05
Applicant: SONY CORP
Inventor： IWASAKI HIROSHI , HASHIMOTO SHUNICHI , OCHIAI YOSHITAKA , ASO KOICHI
IPC: C23C14/06 , G11B5/64 , G11B5/65 , G11B5/66 , G11B5/673 , G11B5/738 , G11B11/10 , G11B11/105 , H01F10/16 , H01F10/30
Abstract: PURPOSE:To obtain a perpendicularly magnetized film having high coercive force by providing a base film of a composite oxide film by arbitrary combination of Fe, Co and Ni in an oxide region under a Co-P artificial lattice film. CONSTITUTION:Ar and O2 are fed with a pure Co target, and reactively sputtered to form a Co-O base film having a predetermined thickness by a high frequency magnetron sputtering device. Then, the base film is alternately moved on Co and Pt targets in the same device, and a Co film and a Pt film are alternately superposed in the Ar to laminate the Co-Pt artificial lattice films to form a vertically magnetized film. The thickness of a composite base oxide film is selected to 50-3000Angstrom , and the total thickness of the Co-Pt artificial lattice film on the base film is selected to 50-800Angstrom . According to the structure, a high coercive force is obtained without deteriorating the square shape of a magnetization curve. These materials have large refractive index, and the base film has a sufficient transparency, thereby obtaining an enhancing effect when it is superposed on a recording layer as an upper dielectric layer.
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公开(公告)号：JPS648605A
公开(公告)日：1989-01-12
申请号：JP16359387
申请日：1987-06-30
Applicant: SONY CORP
Inventor： HAYASHI KAZUHIKO , HAYAKAWA MASATOSHI , KATORI KENJI , ASO KOICHI
Abstract: PURPOSE:To provide a soft magnetic thin film of good magnetic properties by specifying a composition range of FeCoNi alloy. CONSTITUTION:A soft magnetic thin film, mainly consisting of FeCoNi alloy of Fe, Co and Ni in the composition range of Fe of 20-40 atomic %, Co of 15-55 atomic % and Ni of 20-55 atomic %, has good magnetic properties when used as a single layer film. Moreover, by laminating this soft magnetic thin film as the first soft magnetic thin film onto the second soft magnetic thin film of body-centered cubic structure, the magnetic properties can be improved still further. When such a soft magnetic thin film of single layer type or laminated layer type is used, for instance, for a core material of magnetic head, excellent recording and reproduction can be realized.
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