公开(公告)号：JP2008060608A

公开(公告)日：2008-03-13

申请号：JP2007297078

申请日：2007-11-15

Applicant: Sony Corp ,  ソニー株式会社

Inventor： DOI MASATO ,  TOMOTA KATSUHIRO ,  WATANABE AKIHIKO ,  OHATA TOYOJI

IPC: H01L33/32 ,  H01L33/62

CPC classification number: H01L2924/12041

Abstract: PROBLEM TO BE SOLVED: To provide an element transfer method and a display device that can easily exfoliate a substrate after an element is transferred from the substrate, where elements are arranged, to another substrate, is capable of reducing the possibility of damage on the substrate, and can transfer an additional element onto the same substrate again once the transfer of element is done. SOLUTION: A plurality of elements arranged on a temporary holding substrate is held by being embedded to an adhesive layer formed on a transfer substrate and the elements are peeled off from a temporary holding substrate. The elements can be arranged on the large area transfer substrate by additionally embedding the other elements to the adhesive layer before the adhesive layer is cured. Embedding of the elements having different characteristics from the elements embedded previously to the adhesive layer can easily provide a multi-color display device and a display device having a drive circuit. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供一种元件转移方法和显示装置，其在将元件从衬底上排列的元件转移到另一衬底之后能够容易地剥离衬底，能够降低损坏的可能性 一旦完成了元件的转移，就可以再次将附加元件转移到同一基板上。 解决方案：布置在临时保持基板上的多个元件通过嵌入到形成在转印基板上的粘合剂层而被保持，并且元件从临时保持基板上剥离。 在粘合剂层固化之前，通过另外将其它元件嵌入到粘合剂层中，可以将这些元件布置在大面积转移基板上。 将具有不同特征的元件嵌入到先前嵌入到粘合剂层中的元件可以容易地提供具有驱动电路的多色显示装置和显示装置。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2007335731A

公开(公告)日：2007-12-27

申请号：JP2006167481

申请日：2006-06-16

Applicant: Sony Corp ,  ソニー株式会社

Inventor： SUZUKI ATSUSHI ,  DOI MASATO

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/46 ,  H01L33/56

Abstract: PROBLEM TO BE SOLVED: To provide a light emitting mounting board which can be intended to maximize an extraction efficiency of a light. SOLUTION: An end 14 inclining to a lower face of an n-type GaN layer 11 is formed in the n-type GaN layer 11, an active layer 12, and a p-type GaN layer 13 which form a GaN based light emitting diode 1. A p-side electrode 15 is formed on the p-type GaN layer 13. A transparent resin 16 is formed so as to cover an upper face of the p-type GaN layer 13 in a portion around the end 14 and the p-side electrode 15, and a reflective film 17 is formed so as to coat the entire of the transparent resin 16 and the p-side electrode 15. An n side electrode 18 is formed on the lower face of the n-type GaN layer 11. The side of the n-type GaN layer 11 of this GaN based light emitting diode 1 is mounted on a transparent substrate 2 through a transparent medium layer of a low refractive index 3 such as an air gap or the like. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供可以使光的提取效率最大化的发光安装板。 解决方案：在形成GaN基的n型GaN层11，有源层12和p型GaN层13中形成向n型GaN层11的下表面倾斜的端部14 发光二极管1.在p型GaN层13上形成p侧电极15.透明树脂16形成为在端部14周围的部分覆盖p型GaN层13的上表面 p侧电极15和反射膜17形成为覆盖透明树脂16和p侧电极15的整体.n侧电极18形成在n型电极15的下表面上 GaN层11.这种GaN基发光二极管1的n型GaN层11的侧面通过诸如气隙等的低折射率3的透明介质层安装在透明基板2上。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2006196694A

公开(公告)日：2006-07-27

申请号：JP2005006704

申请日：2005-01-13

Applicant: Sony Corp ,  ソニー株式会社

Inventor： SUZUKI ATSUSHI ,  DOI MASATO ,  OKUYAMA HIROYUKI ,  BIWA TSUYOSHI

IPC: H01L33/10 ,  H01L33/32 ,  H01L33/56

CPC classification number: H01L33/20 ,  Y10S257/918

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element for achieving face light emission with higher light extraction efficiency and light density from a light extraction surface. SOLUTION: The semiconductor light-emitting element has a laminated semiconductor structure section 4, comprising at least a first-conductivity-type first cladding layer 1, an active layer 2, and a second-conductivity-type second cladding layer 3. In this case, the outer-periphery surface 4s of the laminated semiconductor structure section 4 is formed in a curved surface shape convexly curved or bent toward outside for the lamination direction. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种用于从光提取表面获得更高的光提取效率和光密度的用于实现面发光的半导体发光元件。 解决方案：半导体发光元件具有至少包括第一导电型第一包层1，有源层2和第二导电型第二包层3的层叠半导体结构部分4。 在这种情况下，层叠半导体结构部4的外周面4s形成为向层叠方向外侧弯曲或向外侧弯曲的曲面形状。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2006140247A

公开(公告)日：2006-06-01

申请号：JP2004327247

申请日：2004-11-11

Applicant: Sony Corp ,  ソニー株式会社

Inventor： DOI MASATO ,  WATANABE AKIHIKO

IPC: H01L21/60 ,  H01L33/52 ,  H01L33/62

CPC classification number: H01L2224/16

Abstract: PROBLEM TO BE SOLVED: To improve mechanical and electrical connection reliability to establish effective wiring connection with higher accuracy at a lower cost even in a fine semiconductor chip for a large number of connection objects.
SOLUTION: A semiconductor chip 1 including a first and a second electrodes 11, 12 for external connections is arranged at an area near connecting portions 23, 24 of a first and a second wires 21, 22 as the respective connection objects and the semiconductor chip 1 is temporarily fixed via a bonding layer 3. Next, a metal body 4 is grown by a non-electrolytic plating method at the connecting portions 23, 24 of the first and second electrodes 11, 12 for external connections. The semiconductor chip 1 is connected with the first and second wires 21, 22 by combining and integrating the grown metal precipitated structure.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：为了提高机电连接可靠性，即使在用于大量连接对象的精细半导体芯片中，以更低的成本以更高的精度建立有效的布线连接。 解决方案：包括用于外部连接的第一和第二电极11,12的半导体芯片1被布置在作为各个连接对象的第一和第二导线21,22的连接部分23,24附近的区域中，并且 半导体芯片1经由接合层3临时固定。接下来，通过非电解电镀法在第一和第二电极11,12的连接部分23,24处生长金属体4用于外部连接。 半导体芯片1通过组合并整合生长的金属沉淀结构而与第一和第二布线21,22连接。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2006065011A

公开(公告)日：2006-03-09

申请号：JP2004247788

申请日：2004-08-27

Applicant: Sony Corp ,  ソニー株式会社

Inventor： DOI MASATO ,  WATANABE AKIHIKO

IPC: G09F9/30 ,  G09F9/00 ,  H01L33/38 ,  H01L33/42

Abstract: PROBLEM TO BE SOLVED: To provide element connection wiring with which only the defective element can be easily cut from the wiring, an image display device, and a method for cutting the wiring, in the image display device in which light emitting elements, such as minute light emitting diodes are arranged on a substrate.
SOLUTION: A cutting section 7 B is formed in a juncture 6 B for electrically connecting the light emitting element 5 B and the wiring 4 B and the removal of the cutting section 7 B is performed by irradiating the cutting section 7 B with a laser beam, thereby cutting the electrical connection of the wiring 4 B and the light emitting element 5 B constituting a circuit on the substrate. By forming the cutting section 7 B at a point where the section does not overlap the elements, such as the light emitting element 5 B, the lower layer wiring 2, and a transparent electrode 3 B, the accidental exertion of damage to the wiring etc., other than the juncture 6 B can be prevented when the wiring is irradiated with the laser beam.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：在图像显示装置中，提供发光元件的元件连接布线，其中只有有缺陷的元件可以容易地从布线切割，图像显示装置和切割布线的方法 ，例如微小的发光二极管被布置在基板上。 解决方案：切割部分7B形成在用于电连接发光元件B B和布线4B的接合点6B上，切割部分7B的移除通过用切割部分7B照射来进行 激光束，从而切断构成基板上的电路的布线4B和发光元件5B的电连接。 通过在该部分不与发光元件5B，下层布线2和透明电极3B等元件重叠的点处形成切割部分7B，意外地损坏布线等 当用激光束照射布线时，可以防止接合点6B之外的接合。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2004304161A

公开(公告)日：2004-10-28

申请号：JP2004009777

申请日：2004-01-16

Applicant: Sony Corp ,  ソニー株式会社

Inventor： WATANABE AKIHIKO ,  DOI MASATO ,  SATO NOBUAKI

IPC: G09G5/00 ,  H01L33/08 ,  H01L33/38 ,  H01L33/42 ,  H01L33/00

CPC classification number: H01L33/62 ,  H01L2221/68359 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To form an electrode on a small light emitting element without fail and to prevent light extraction efficiency from degrading. SOLUTION: A transparent electrode 4 is connected directly to a light extraction surface 5 so as to cover the entire surface of the light extraction surface 5. The transparent electrode 4 is formed so as to be larger in size than the light extraction surface 5 and connected electrically to an n-type semiconductor layer 6 including the light extraction surface 5 without fail. In other words, even when a light emitting diode 1 is small in size, the n-type semiconductor layer 6 and the transparent electrode 4 are connected without fail. Therefore, compared to the case that it is difficult to precisely form the transparent electrode which is smaller in size than the light extraction surface 5 in the light extraction surface, the transparent electrode is formed more reliably on the light emitting diode 1 without fail and it becomes possible to extract light generated in the light emitting diode 1 to the outside of the element without blocking the electrode. COPYRIGHT: (C)2005,JPO&NCIPI

公开(公告)号：JP2004281630A

公开(公告)日：2004-10-07

申请号：JP2003069635

申请日：2003-03-14

Applicant: Sony Corp ,  ソニー株式会社

Inventor： TOMOTA KATSUHIRO ,  DOI MASATO ,  WATANABE AKIHIKO ,  OHATA TOYOJI

IPC: G03F7/20 ,  G09F9/00 ,  H01L21/50 ,  H01L21/52 ,  H01L33/48 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide an element transfer method which can exfoliate a substrate easily after the element is transferred from a substrate where elements are arranged to another substrate, is capable of reducing the substrate damages, and imprinting to add an element on the same substrate again after printing the element, and to provide a substrate for element transfer and a display device. SOLUTION: A plurality of elements arranged on a temporary holding substrate are buried in an adhesive layer formed on a transfer substrate and held. The elements are exfoliated from the substrate. The adhesive layer is selectively hardened, a cured wall is formed and the adhesive layer is divided into micro cells, thereby preventing the adhesive layer from moving by pressure. A transfer substrate side of the adhesive layer is hardened and a cured layer is formed, and the elements are fixed by the cured layer, thereby preventing the displacement of the elements in the adhesive layer. The adhesive layer is softened after the elements are buried in the adhesive layer, thereby reducing the step-difference in a boundary of the elements and the adhesive layer. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：为了提供一种元件转移方法，其可以在元件从元件布置的基板转移到另一基板之后容易地剥离基板，能够减少基板损伤，并且压印以添加元素 在打印元件之后再次在相同的基板上，并且提供用于元件转印的基板和显示装置。 解决方案：将布置在临时保持基板上的多个元件埋入形成在转印基板上的粘合剂层中并保持。 元素从基底剥离。 粘合剂层被选择性地硬化，形成固化壁并将粘合剂层分成微细胞，从而防止粘合剂层通过压力移动。 粘合剂层的转移基板侧被硬化并形成固化层，并且通过固化层固定元件，从而防止元件在粘合剂层中的位移。 在将元件埋入粘合剂层中之后，粘合剂层软化，从而减少元件和粘合剂层的边界的差异。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2003188412A

公开(公告)日：2003-07-04

申请号：JP2001386585

申请日：2001-12-19

Applicant: SONY CORP

Inventor： KIKUTANI TOMOYUKI ,  DOI MASATO ,  OHATA TOYOJI

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/56 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor element and the semiconductor element whereby an adhesive material layer remaining around a growth substrate and a semiconductor layer can be efficiently removed with ease and the element can be formed with low production cost and high yield when the semiconductor layer is transferred, by ablation using irradiation with a laser beam, to the substrate having the adhesive material layer formed thereon. SOLUTION: The adhesive material layer remaining around the growth substrate and the semiconductor layer can be positively removed with ease in an efficient manner by emitting the laser beam onto the surplus adhesive material layer remaining around the growth substrate and the semiconductor layer, performing plasma ashing thereon, or combining the laser beam irradiation and ashing. The semiconductor layer can be entirely used as an element without removing the surplus adhesive material layer along the surrounding part of the semiconductor layer. Thus, it is possible to form the semiconductor element with high yield without damaging the crystals of the semiconductor layers. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2003188142A

公开(公告)日：2003-07-04

申请号：JP2001385599

申请日：2001-12-19

Applicant: SONY CORP

Inventor： KIKUTANI TOMOYUKI ,  DOI MASATO ,  OHATA TOYOJI

IPC: C30B29/38 ,  H01L21/306 ,  H01L33/06 ,  H01L33/32 ,  H01L33/40 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by which favorable electrodes can be formed by completely removing the gallium precipitated on the rear face of the grown semiconductor layer after separating the grown semiconductor layer by laser ablation and the semiconductor layer can be completely separated for each device, and to provide a semiconductor device. SOLUTION: After a grown semiconductor layer has transferred to a substrate for temporary retention by laser ablation by exposing the rear face of a substrate to the laser beam, isotropic etching is applied to the rear face of the grown semiconductor layer by using a mixture of solution (royal water) of hydrochloric acid and nitric acid. In this way, the gallium precipitated on the rear face of the grown semiconductor layer and layers exhibiting low conductivity formed by anisotropic etching by RIE can be completely removed. Accordingly, a surface most suitable for forming electrodes can be properly exposed from the rear face of the semiconductor device and proper electrodes of low-resistance can be formed on the rear face of the device. Furthermore, the grown semiconductor layer can be completely separated for each device with uniform etched profile. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2003162231A

公开(公告)日：2003-06-06

申请号：JP2001359780

申请日：2001-11-26

Applicant: SONY CORP

Inventor： DOI MASATO ,  IWABUCHI TOSHIAKI

IPC: G09F9/33 ,  G09F9/00 ,  H01L33/32 ,  H01L33/36 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing elements which can deal with the formation of microelements as well, and can easily connect the elements to the wiring disposed on the surface of a resin embedded with the elements and to provide a method of manufacturing an image display device using the same. SOLUTION: Resin layers are formed by packing a resin to the circumferences of the elements arranged on the front surface of a release material layer and the elements and the peeling surfaces of the resin layers are formed flush with each other by peeling the resin layers from the release material layer, by which electrode pads and wiring are easily formed while the defect of connection is suppressed. COPYRIGHT: (C)2003,JPO