公开(公告)号：JP2012059664A

公开(公告)日：2012-03-22

申请号：JP2010204377

申请日：2010-09-13

Applicant: Sony Corp ,  ソニー株式会社

Inventor： MACHIDA AKIO ,  KOJIMA KENSUKE ,  ISHIDA YUICHI

IPC: H01M8/06 ,  C01B3/04 ,  C25B1/04 ,  F24H1/00 ,  H01L31/04 ,  H01M8/00

CPC classification number: B01D53/22 ,  B01D2256/12 ,  B01D2256/16 ,  H01M8/0656 ,  H01M14/005 ,  H01M2250/405 ,  Y02B90/16 ,  Y02E10/52 ,  Y02E60/364 ,  Y02E60/366

Abstract: PROBLEM TO BE SOLVED: To provide a power generation system capable of obtaining both electric energy and heat energy with the use of light energy.SOLUTION: A power generation system 1 comprises: a gas generation part 10 which includes an electrolyte A and a plurality of semiconductor chips 12 having a photoelectric conversion function contained in a container 11, and which absorbs light energy to generate gas; a power generation part 20 which uses the gas generated by the gas generation part 10 to produce electric energy; and a water heater 30 which absorbs heat energy from the inside of the container 11. In the gas generation part 10, light incident into the container 11 is absorbed by the plurality of semiconductor chips 12 to cause electrolysis in the electrolyte A. Gas (such as hydrogen) is generated in the container 11, and the power generation part 20 produces electric energy by using the generated gas. Temperature inside the container 11 rises due to reaction heat by the electrolysis and radiation heat from sunlight, and the heat energy inside the container 11 is absorbed by the water heater 30.

Abstract translation: 要解决的问题：提供能够利用光能获得电能和热能的发电系统。 发电系统1包括：气体产生部10，其包含电解质A和容纳在容器11中的具有光电转换功能的多个半导体芯片12，其吸收光能以产生气体; 使用由气体生成部10生成的气体来产生电能的发电部20; 以及从容器11的内部吸收热能的热水器30.在气体产生部10中，入射到容器11中的光被多个半导体芯片12吸收，从而在电解液A中产生电解。气体 作为氢）在容器11中产生，并且发电部20通过使用产生的气体产生电能。 容器11内的温度由于电解产生的反应热和来自阳光的辐射热而升高，容器11内的热能被热水器30吸收。（C）2012，JPO＆INPIT

公开(公告)号：JP2010121867A

公开(公告)日：2010-06-03

申请号：JP2008296626

申请日：2008-11-20

Applicant: Sony Corp ,  ソニー株式会社

Inventor： HASHIMOTO MITSUO ,  YAZAWA KAZUAKI ,  ISHIDA YUICHI ,  YOSHITAKA HIROYUKI

IPC: F28D15/02 ,  H01L23/427

CPC classification number: H01L23/427 ,  F28D15/0233 ,  F28D15/0266 ,  F28D15/046 ,  F28F3/12 ,  F28F13/187 ,  F28F21/02 ,  F28F2245/02 ,  F28F2245/04 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a heat spreader capable of obtaining high heat radiation effects without increasing the size, electronic equipment including the heat spreader, and a method of manufacturing the heat spreader enabling easy and inexpensive manufacturing and improvement of reliability. SOLUTION: Grooves 74 are provided on an evaporation face 72 of an evaporation portion 7 comprising a carbon nano-tube. The grooves 74 comprise peripheral groove portions 75 and radial groove portions 76. The peripheral groove portions 75 are formed to have a concentric circular shape around the center O of the evaporation face 72, and the radial groove portions 76 are formed to have a shape radially passing through the center O. The groove 74 has a V-shaped cross section. A bottom 77 of the groove 74 is positioned within the evaporation portion 7, and preferably, the width of the groove 74 is set to be 40 μm or less. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种能够在不增加尺寸的情况下获得高散热效果的散热器，包括散热器的电子设备，以及制造散热器的方法，从而能够容易且廉价地制造并提高可靠性。 解决方案：槽74设置在包括碳纳米管的蒸发部分7的蒸发面72上。 凹槽74包括周向槽部分75和径向槽部分76.周边槽部分75形成为具有围绕蒸发面72的中心O的同心圆形形状，并且径向槽部分76形成为具有径向的形状 通过中心O.槽74具有V形横截面。 凹槽74的底部77位于蒸发部7内，优选地将凹槽74的宽度设定为40μm以下。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2005120421A

公开(公告)日：2005-05-12

申请号：JP2003356431

申请日：2003-10-16

Applicant: Sony Corp ,  ソニー株式会社

Inventor： HIRONAKA KATSUYUKI ,  ISOBE CHIHARU ,  SUZUKI MASAYUKI ,  ISHIDA YUICHI ,  NAITO HIROKI

IPC: G01N27/04 ,  B82B1/00 ,  B82B3/00 ,  C25D11/04 ,  C25D11/16 ,  C25D11/18 ,  C25D11/20 ,  C25D11/24 ,  G01N5/02 ,  G11B5/65 ,  G11B5/855 ,  G11B7/24 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/105

Abstract: PROBLEM TO BE SOLVED: To provide a pore structure showing excellent adhesion with a substrate electro-conductive layer and having a surface with improved flatness, to provide its production method, to provide a memory device using the pore structure, to provide its production method, to provide an adsorption amount analyzer, and to provide a magnetic recording medium. SOLUTION: A base electro-conductive layer 2 and an Al-Hf alloy layer 3 (or a stacked body of the Al-Hf alloy layer 3 and an Al layer) are formed on a substrate 1 in a stacked state. A simple substance composed of Pt, Ir, Pd, Rh, Au, Ag, Ru, Cu or Ni or an alloy thereof having satisfactory adhesion to the Al-Hf alloy layer 3 is used for the base electro-conductive layer 2. Next, the Al-Hf alloy layer 3 (or the stacked body) is anodized in an acid aqueous solution to form a nanohole structure having nanoholes 8, and, if required, the nanoholes 8 are subjected to width expansion working by etching. Then, a functional material 10 such as a ferroelectric material, a ferromagnetic material, a variable resistance material, a phase transition material and a phosphor material is filled into the nanoholes, by which the nanohole structure having various functions is produced. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：为了提供与基板导电层具有优异粘附性并且具有改善的平坦度的表面的孔结构，以提供其制造方法，提供使用该孔结构的记忆装置，以提供其 制造方法，提供吸附量分析装置，提供磁记录介质。 解决方案：在基板1上堆叠地形成基底导电层2和Al-Hf合金层3（或Al-Hf合金层3和Al层的层叠体）。 作为基体导电层2，使用由Pt，Ir，Pd，Rh，Au，Ag，Ru，Cu，Ni构成的简单物质或其与Al-Hf合金层3的密合性良好的合金。接着， 在酸性水溶液中对Al-Hf合金层3（或层叠体）进行阳极氧化，形成具有纳米孔8的纳米孔结构，如果需要，则通过蚀刻对纳孔7进行宽度膨胀加工。 然后，将诸如铁电体材料，铁磁材料，可变电阻材料，相变材料和荧光体材料的功能材料10填充到纳米孔中，由此产生具有各种功能的纳米孔结构。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2000281494A

公开(公告)日：2000-10-10

申请号：JP8492199

申请日：1999-03-26

Applicant: SONY CORP

Inventor： AMI TAKAAKI ,  ISHIDA YUICHI ,  NAGASAWA NAOMI ,  SUZUKI MASAYUKI ,  MACHIDA AKIO

IPC: H01L21/8247 ,  C30B23/02 ,  C30B25/02 ,  C30B29/16 ,  C30B33/02 ,  H01L21/302 ,  H01L21/314 ,  H01L21/316 ,  H01L21/461 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/10 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792

Abstract: PROBLEM TO BE SOLVED: To realize an epitaxial rare earth oxide (110)/silicon (001) structure by well epitaxially growing a rare earth oxide such as cerium oxide of the (110) face orientation on a silicon substrate of the (001) face orientation at a lower growth temperature than that of a conventional method. SOLUTION: The surface of an Si substrate 1 of the (001) face orientation is converted into a dimer structure by surface reconstruction of 2×1 and 1×2 and a raw material comprising at least one or more kinds of rare earth elements is used in an atmosphere containing an oxidizing gas to epitaxially grow a cubic or a tetragonal rare earth oxide, e.g. a CeO2 membrane 2 of the (110) face orientation. At the time of the growth, the feed of the oxidizing gas to the surface of the Si substrate 1 is started and the feed of the raw material comprising at least the one or more kinds of the rate earth elements is then carried out.