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    2.
    发明专利
    未知

    公开(公告)号：DE69801612T2

    公开(公告)日：2002-06-20

    申请号：DE69801612

    申请日：1998-05-14

    Applicant: SONY CORP

    Inventor： MACHIDA AKIO ,  NAGASAWA NAOMI ,  AMI TAKAAKI ,  SUZUKI MASAYUKI

    IPC: C30B29/22 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/115 ,  H01L21/02

    Abstract: It is intended to provide a ferroelectric that exhibits superior ferroelectricity. A ferroelectric provided is an oxide having a layered crystal structure that is composed of Bi, a first element Me, a second element R, and O. The first element Me is at least one element selected from the group consisting of Na, K, Ca, Ba, Sr, Pb, and Bi. The second element R is at least one element selected from the group consisting of Fe, Ti, Nb, Ta, and W. Ninety-eight percent or more of the entire body of the ferroelectric exhibits ferroelectricity. After an oxide having a layered crystal structure has been grown by a vapor-phase method (crystal growth step), electrodes are attached to the oxide having a layered crystal structure and a voltage is applied thereto (voltage application step). As a result, strains of crystal lattices are corrected at least partially, whereby portions that did not exhibit ferroelectricity at all or did not exhibit superior ferroelectricity due to such large strains that the symmetry of crystal lattices is lost are changed so as to exhibit superior ferroelectricity.

    3.
    发明专利
    未知

    公开(公告)号：DE3575712D1

    公开(公告)日：1990-03-08

    申请号：DE3575712

    申请日：1985-10-24

    Applicant: SONY CORP

    Inventor： YAMAGUCHI TAKASHI ,  NAGASAWA NAOMI ,  TAMURA HIDEMASA

    IPC: C04B35/00 ,  C04B35/495 ,  G11B5/10 ,  G11B5/31 ,  G11B5/147

    Abstract: A ceramic composition having the general formula:wherein the ratio of x/y is at least 0.85 less than 1.00, the composition having a coefficient of thermal expansion which matches that of a metal thin film type magnetic recording head so that the composition can be used as a base for the head with a minimum risk of detachment or peeling between the metal thin film and the ceramic composition substrate.

    4.
    发明专利
    未知

    公开(公告)号：DE69801612D1

    公开(公告)日：2001-10-18

    申请号：DE69801612

    申请日：1998-05-14

    Applicant: SONY CORP

    Inventor： MACHIDA AKIO ,  NAGASAWA NAOMI ,  AMI TAKAAKI ,  SUZUKI MASAYUKI

    IPC: C30B29/22 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/115 ,  H01L21/02

    Abstract: It is intended to provide a ferroelectric that exhibits superior ferroelectricity. A ferroelectric provided is an oxide having a layered crystal structure that is composed of Bi, a first element Me, a second element R, and O. The first element Me is at least one element selected from the group consisting of Na, K, Ca, Ba, Sr, Pb, and Bi. The second element R is at least one element selected from the group consisting of Fe, Ti, Nb, Ta, and W. Ninety-eight percent or more of the entire body of the ferroelectric exhibits ferroelectricity. After an oxide having a layered crystal structure has been grown by a vapor-phase method (crystal growth step), electrodes are attached to the oxide having a layered crystal structure and a voltage is applied thereto (voltage application step). As a result, strains of crystal lattices are corrected at least partially, whereby portions that did not exhibit ferroelectricity at all or did not exhibit superior ferroelectricity due to such large strains that the symmetry of crystal lattices is lost are changed so as to exhibit superior ferroelectricity.

    5.
    发明专利
    未知

    公开(公告)号：DE3575711D1

    公开(公告)日：1990-03-08

    申请号：DE3575711

    申请日：1985-10-10

    Applicant: SONY CORP

    Inventor： YAMAGUCHI TAKASHI ,  NAGASAWA NAOMI ,  TAMURA HIDEMASA

    IPC: C04B35/00 ,  C04B35/495 ,  G11B5/147 ,  G11B5/31

    Abstract: A ceramic composition particularly useful for use in thin film magnetic heads, the composition having the general formula:wherein the ratio x/y is at least 0.74 but less than 1.00, the composition having a coefficient of thermal expansion closely matching that of the magnetic alloy film with which it is used so as to prevent separation of the two upon changes in temperature.

    SOLID DISPLACEMENT ELEMENT, OPTICAL DEVICE AND INTERFERENCE FILTER
    7.
    发明专利
    SOLID DISPLACEMENT ELEMENT, OPTICAL DEVICE AND INTERFERENCE FILTER 失效

    公开(公告)号：JP2001021850A

    公开(公告)日：2001-01-26

    申请号：JP19183499

    申请日：1999-07-06

    Applicant: SONY CORP

    Inventor： SUZUKI MASAYUKI ,  ISHIDA YUICHI ,  NAGASAWA NAOMI ,  AMI TAKAAKI ,  NISHIMURA TEIICHIRO

    IPC: C09K3/00 ,  G02B5/28 ,  G02B5/30 ,  G02F1/01 ,  G02F1/061 ,  G02F1/13 ,  G02F1/133 ,  G02F1/21 ,  G02F1/355

    Abstract: PROBLEM TO BE SOLVED: To provide a solid displacement element which can generate displacement by a simple method and structure by incorporating an organic substance among the layers of an inorganic lamellar substance so that when the element is irradiated with controlling light, it stretches or shrinks in a laminating direction of the inorganic lamellar substance. SOLUTION: The solid displacement element contains an organic substance among the layers of an inorganic lamellar substance having a lamellar structure, and when the element is irradiated with controlling light, it stretches and shrinks in the laminating direction of the inorganic lamellar substance. The organic substance consists of an organic compound which can change its arrangement in the solid displacement element along the electric field direction of the controlling light irradiating the element. The organic substance is preferably an organic compound or the like having at least one kind of chain type carbon-carbon bonds, benzene rings or heterocycles. The organic substance is preferably a chiral liquid crystal, phenyl pyrimidine liquid crystal or azobenzene compound. The inorganic lamellar substance is preferably a lamellar perovskite niobium compound, sheet polysilicate, graphite or the like.

    FERRITE MATERIAL
    8.
    发明专利
    FERRITE MATERIAL 失效

    公开(公告)号：JPH04325495A

    公开(公告)日：1992-11-13

    申请号：JP12258891

    申请日：1991-04-25

    Applicant: SONY CORP

    Inventor： NAGASAWA NAOMI ,  KAMIHIRA AKIRA

    IPC: C30B29/22

    Abstract: PURPOSE:To offer a ferrite material in which raw material cost is inexpensive, furthermore easily manufacturable, low in core loss particularly by high frequency and moreover having high resistance. CONSTITUTION:A first ferrite material in the subject invention is a one having a compsn. expressed by a general formula constituted of ZnAMgBNiCMnDLiEFe3-(A+B+C+D+E)O4 and in which coefficients A, B, C and D showing the ratio of the atomic numbers of each element lie in the range of 0.53

    PRODUCTION OF SINGLE CRYSTALLINE FERRITE
    9.
    发明专利
    PRODUCTION OF SINGLE CRYSTALLINE FERRITE 失效

    公开(公告)号：JPH02199094A

    公开(公告)日：1990-08-07

    申请号：JP13500189

    申请日：1989-05-29

    Applicant: SONY CORP

    Inventor： NAGASAWA NAOMI ,  KAMIHIRA AKIRA ,  YAMANOI HIROSHI

    IPC: C30B1/02 ,  C30B29/22

    Abstract: PURPOSE:To enable to form a long single crystal capable of giving a single crystalline ferrite reduced in the fluctuation of magnetic characteristics thereof by allowing a specific organic metal compound to intervene on a junction interface between a polycrystalline ferrite and a single crystal and subsequently heating the laminated crystals to allow the single crystal to grow. CONSTITUTION:When a polycrystal is converted into a single crystal to produce a single crystal ferrite, at least one organic metal compound selected from K, Rb and Cs, such as an alcoholate solution or an acetylacetonate solution is allowed to intervene on a junction interface between a polycrystalline ferrite and a single crystal and subsequently held at a temperature of >=1350 deg.C, preferably >=1400 deg.C under a pressure of >=6kg/cm in an atmosphere of a gas such as N2 to allow the single crystal to grow. The method permits to inhibit the growth of abnormal crystal particles and accelerate the growth of the single crystal to a distance of approximately 20mm from the interface.

    Manufacture of nonglare optical element
    10.
    发明专利
    Manufacture of nonglare optical element 失效
    NONLARE光学元件的制造

    公开(公告)号：JPS5761530A

    公开(公告)日：1982-04-14

    申请号：JP13684680

    申请日：1980-09-30

    Applicant: Sony Corp

    Inventor： WATANABE TOSHIROU ,  NAGASAWA NAOMI

    IPC: B29B13/00 ,  B29C33/00 ,  B29C33/38 ,  B29C39/00 ,  B29C39/26 ,  B29C43/02 ,  B29C43/36 ,  B29C61/00 ,  B29D11/00 ,  G02B1/10 ,  G02B1/11

    Abstract: PURPOSE: To obtain a nonglare plastic optical element readily by providing the thin layer of hydrated metal oxide on the surface of the lens pattern and forming the matrix having nonglare surface utilizing fine unevenness.
    CONSTITUTION: The metal layer 4 changing into hydrated oxide is deposited by evaporation etc. on the pattern 3 on which e.g. Fresnel lens face 2 is formed. E.g. aluminum is used as metal converted to the boehmite[AlO(OH)]thin layer in steam, and unevenness of fine pitch contributes to nonglare property. Then the metal evaporation layer is formed on the boehmite thin layer 5, and further the metal body 7 which becomes the matrix is formed by electroplating. The matrix 8 is obtained by removing the boehmite layer 5 by etching from the metal body 7.
    COPYRIGHT: (C)1982,JPO&Japio

    Abstract translation: 目的：通过在透镜图案的表面上提供水合金属氧化物的薄层，并且利用细小的不均匀性形成具有不透明表面的基体，从而容易地获得非光滑塑料光学元件。 构成：通过蒸发等将金属层4变成水合氧化物沉积在图案3上， 形成菲涅尔透镜面2。 例如。 使用铝作为在蒸汽中转化为勃姆石[AlO（OH）]薄层的金属，细间距的不均匀性有助于不粘性。 然后在勃姆石薄层5上形成金属蒸发层，并且通过电镀形成成为基体的金属体7。 通过从金属体7的蚀刻除去勃姆石层5而获得矩阵8。

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