公开(公告)号：JPH11186255A

公开(公告)日：1999-07-09

申请号：JP32360297

申请日：1997-11-25

Applicant: SONY CORP

Inventor： KASHIWAGI AKIHIDE ,  TOKUNAGA KAZUHIKO ,  SUZUKI TOSHIHIKO ,  KIMURA HIDEKI ,  KATAOKA TOYOTAKA ,  SUZUKI ATSUSHI ,  TANAKA NOBUFUMI

IPC: H01L21/31 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To avoid causing irregularities by starting forming an Si oxide film by an oxidation method using a wet gas at an atmosphere temp. at which no Si atom releases from the Si layer surface to form the Si oxide film of desired thickness by the oxidation method using a wet gas. SOLUTION: An Si oxide film 42 is formed on the surface of an Si semiconductor substrate 40 by the oxidation method using a wet gas at an atmosphere temp. held at which no Si atom separates from the Si semiconductor substrate 40 surface and an Si oxide film 42 is formed on the surface of the Si semiconductor substrate 40 by the oxidation method using a wet gas at an atmosphere temp. held higher than the atmosphere temp. at which no Si atom separates from the Si semiconductor substrate 40. This avoids causing irregularities on the Si layer surface and improves the characteristics of the Si oxide film not contg. a dry oxide film of a less reliability in the finally formed Si oxide film.

公开(公告)号：JPH1116901A

公开(公告)日：1999-01-22

申请号：JP16375997

申请日：1997-06-20

Applicant: SONY CORP

Inventor： KASHIWAGI AKIHIDE ,  KIMURA HIDEKI ,  TANAKA NOBUFUMI ,  KATAOKA TOYOTAKA ,  SUZUKI ATSUSHI

IPC: H01L29/78 ,  H01L21/316 ,  H01L21/336

Abstract: PROBLEM TO BE SOLVED: To enhance the uniformIty of inner film thickness on a silicon semiconductor substrate by a method wherein a silicon oxide film is formed on the surface of a silicon layer by oxidizing process using a dry oxygen gas containing hydrogen chloride in the state of holding the atmosphere at a temperature not to desorb the silicon atoms from the surface of the silicon layer. SOLUTION: A silicon oxide film 42 is formed on the surface of a silicon layer by oxidizing process using a dry oxygen gas containing a hydrogen chloride in the state of holding an atmosphere at a temperature not to desorb the silicon atoms from the surface of silicon semiconductor substrate 40. Next, the atmospheric temperature is raised up to a specific temperature so as to further form the silicon oxide film by the oxidizing proccss using a wet gas in the state of holding this temperature for heat-treating the silicon oxide film 42. Through these procedures, the production of dry spot on the surface of the silicon layer can be avoided while enabling the very thin oxide film having high uniformity in the film thickness to be formed without fail.

公开(公告)号：JPH10289905A

公开(公告)日：1998-10-27

申请号：JP9885597

申请日：1997-04-16

Applicant: SONY CORP

Inventor： TOKUNAGA KAZUHIKO ,  SUZUKI ATSUSHI ,  KASHIWAGI AKIHIDE

IPC: H01L21/31 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a silicon oxide film in which a silicon oxide film, of high reliability, containing no defect or no weak Si-O coupling, is formed. SOLUTION: A method for forming a silicon oxide film comprises a first silicon oxide film formation process in which a silicon oxide film 42 is formed on the surface of a silicon layer 40, an etching process in which the silicon oxide film 42 is selectively etched, a second silicon oxide film formation process in which anther silicon oxide film 42 is formed, and a third silicon oxide film formation process in which a further silicon oxide film 42 is formed at the ambient temperature higher than that in the second silicon oxide film formation process.

公开(公告)号：JPH1098034A

公开(公告)日：1998-04-14

申请号：JP33506796

申请日：1996-11-29

Applicant: SONY CORP

Inventor： KASHIWAGI AKIHIDE ,  SUZUKI TOSHIHIKO

IPC: H01L21/31 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To form an oxide film, having superior characteristics on the surface of a silicon semiconductor substrate without forming a dry oxide film on the surface of a material to be treated by a method, wherein an oxide film-forming device is provided with a treating chamber for forming the oxide film on the surface of the material to be treated with water vapor, which is generated with hydrogen gas in a combustion chamber, and a means for controlling the inflow of oxygen gas in the treating chamber which is out of contact with a gas introducing part to the combustion chamber. SOLUTION: An element isolation region formation which has finished silicon semiconductor substrate is placed on a quartz boat 24 from a substrate carrying-in and -out part 20 of an oxide film-forming device. The atmosphere in a treating chamber 10 is turned into a nitrogen gas atmosphere with nitrogen gas from a gas introducing part 12, and the atmosphere in the part 20 is turned into an inert gas atmosphere with inert gas, such as nitrogen gas, from a gas-introducing part 21. The silicon semiconductor substrate is carried into the chamber 10. Oxygen gas in put in a combustion chamber 30, which has oxygen gas introduced through a gas-introducing tube 32, while the chamber 30 is filled with the oxygen gas, through a gas introducing tube 31 to combust the oxygen and hydrogen gases, water vapor, which is produced by the combustion of the oxygen and hydrogen gases, is put in the chamber 10 through the part 12 and a silicon oxide film is formed on the surface of the silicon semiconductor substrate by a pyrogenic oxidation method. As a result, an oxide film having superior electrical reliability is formed.

公开(公告)号：JPH06314679A

公开(公告)日：1994-11-08

申请号：JP12783093

申请日：1993-04-30

Applicant: SONY CORP

Inventor： KASHIWAGI AKIHIDE

IPC: H01L21/304 ,  H01L21/306 ,  H01L21/308

Abstract: PURPOSE:To easily remove particles and metal impurities which have adhered to the surface of a semiconductor substrate. CONSTITUTION:A silicon substrate 1 is cleaned by ultrapure water which contains ozone, a silicon oxide film 3 is formed, and particles 2 and metal impurities M are taken into the inside an the surface of the silicon oxide film 3. Then, the silicon substrate 1 is cleaned by a dilute hydrofluoric acid aqueous solution, the silicon oxide film 3 is etched and removed, and, at the same time, the particles 2 and the metal impurities M are removed.