公开(公告)号：WO2014038141A3

公开(公告)日：2014-07-03

申请号：PCT/JP2013004846

申请日：2013-08-13

Applicant: SONY CORP

Inventor： KASHIWAGI AKIHIDE ,  FUJII NOBUTOSHI

IPC: H01L27/32

CPC classification number: H01L27/3246 ,  H01L51/504

Abstract: Provided is a display unit (1) that includes: a plurality of first electrodes (14); a carrier capture section (19C) provided in an inter-electrode region (H); and a functional layer covering the first electrodes and the carrier capture section, and having a carrier- passing functionality (15).

Abstract translation: 提供一种显示单元（1），包括：多个第一电极（14）; 设置在电极间区域（H）中的载体捕获部分（19C）; 以及覆盖第一电极和载体捕获部分的功能层，并且具有载流子传递功能（15）。

公开(公告)号：JPH11354516A

公开(公告)日：1999-12-24

申请号：JP15960698

申请日：1998-06-08

Applicant: SONY CORP

Inventor： KASHIWAGI AKIHIDE ,  KATAOKA TOYOTAKA ,  SUZUKI TOSHIHIKO

IPC: H01L21/31 ,  C23C8/02 ,  C23C8/16 ,  C30B33/00 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To prevent a metallic member constituting a silicon oxide film forming device from being corroded due to moisture, and to generate the in-plane non- uniformity of the film thickness of a silicon oxide film. SOLUTION: In a method for forming a silicon oxide film, a silicon oxide film forming device provided with a processing chamber 10 and a dew drop preventing and evaporating means 40 for preventing steam from being condensed in the processing chamber 10 or for evaporating water condensed in the processing chamber is used. In this case, a substrate having a silicon layer is carried to the processing chamber 10, and steam is introduced to the processing chamber 10, and a silicon layer surface is thermally oxidized. Then, in a state that steam is not condensed in the processing chamber 10, or that water condensed in the processing chamber 10 is evaporated, the substrate is carried out of the processing chamber 10.

公开(公告)号：JPH1041296A

公开(公告)日：1998-02-13

申请号：JP21185596

申请日：1996-07-23

Applicant: SONY CORP

Inventor： SUZUKI ATSUSHI ,  KASHIWAGI AKIHIDE

IPC: H01L21/31 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To form only a wet oxide film having little structural strain in the surface of a semiconductor substrate in the pyrogenic oxidation. SOLUTION: A combustion reaction system is filled with a water vapor- containing oxygen gas in a period before and after starting the combustion reaction with H and O gases and in a period before and after stopping this reaction. For this, if the combustion reaction system communicates with the oxidizing system, only a wet oxide film with little structural strain can be formed by preventing the detonating gas reaction and forming of a dry oxide film on the surface of the substrate.

公开(公告)号：JPH0955379A

公开(公告)日：1997-02-25

申请号：JP20703995

申请日：1995-08-14

Applicant: SONY CORP

Inventor： KASHIWAGI AKIHIDE

IPC: H01L29/78 ,  H01L21/316 ,  H01L21/336

Abstract: PROBLEM TO BE SOLVED: To provide the treatment method of a semiconductor substrate and the manufacturing method of a semiconductor device, which can suppress the surface deterioration such as the formation of a natural oxide film by winding oxidation and the like. SOLUTION: These methods include an least one process for processing or the treatment of a semiconductor substrate and comprise one process, which forms the thin film of a carbon compound X on the surface of the semiconductor substrate at the temperature in the vicinity of room temperature, the process, which introduces the semiconductor substrate into a processing apparatus after the formation of the carbon compound thin film and removes the carbon compound thin film on the semiconductor substrate in the processing apparatus, and the process, which performs the intended treatment on the semiconductor device without exposing to atmosphere.

公开(公告)号：JPH07283382A

公开(公告)日：1995-10-27

申请号：JP7330494

申请日：1994-04-12

Applicant: SONY CORP

Inventor： KASHIWAGI AKIHIDE

IPC: H01L21/306 ,  H01L21/02 ,  H01L21/18 ,  H01L21/304 ,  H01L27/12

Abstract: PURPOSE:To obtain a pasting method in which the generation of a void on a pasted face is prevented when a silicon substrate is pasted and in which especially the generation of a void caused by the surface roughness of a pasted face is prevented. CONSTITUTION:In the pasting method of silicon substrates, at least the pasting face of a silicon substrate whose plane orientation on the pasting face is at (100) is thermally oxidized, a thermal oxide film on at least the pasting face is removed, at least the pasting face of the silicon substrate is oxidized by an oxidizing liquid such as an H2O2 or O2 aqueous solution or the like, and, after that, another silicon substrate [e.g. a (100) substrate] or a substrate of another kind of material is pasted.

公开(公告)号：JP2002289846A

公开(公告)日：2002-10-04

申请号：JP2001093033

申请日：2001-03-28

Applicant: SONY CORP

Inventor： KASHIWAGI AKIHIDE

IPC: H01L21/28 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/43 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device and the manufacturing method for suppressing the diffusion to a semiconductor substrate of nitrogen for suppressing the punch-through of conductive impurities introduced into a gate electrode, while suppressing the punch-through to the semiconductor substrate of the conducive impurities and suppressing the deterioration of transistor characteristics. SOLUTION: The semiconductor device having the gate electrodes 10a and 10b, containing the conductive impurities, is provided with a gate insulation film 6 formed on the semiconductor substrate 2, a diffusion suppression film 7 formed on the gate insulation film 6, containing nitrogen for suppressing the diffusion of the conductive impurities to the gate insulation film 6 and the semiconductor substrate 2, the gate electrodes 10a and 10b formed on the diffusion suppression film 7, containing the conductive impurities and a source region and a drain region 13 and 14 formed on the semiconductor substrate 2.

公开(公告)号：JP2000216156A

公开(公告)日：2000-08-04

申请号：JP1345899

申请日：1999-01-21

Applicant: SONY CORP

Inventor： KASHIWAGI AKIHIDE

IPC: H01L21/8247 ,  H01L21/31 ,  H01L21/318 ,  H01L21/8238 ,  H01L27/092 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a silicon nitride oxide film which can stably form a thin silicon nitride oxide film having excellent characteristics, and can reliably suppress diffusion of boron atoms during formation of a gate electrode of a P type semiconductor element. SOLUTION: The formation method includes (1) a step of forming a silicon oxide film 42 by thermally oxidizing a surface of a silicon layer 40 at an atmosphere temperature at which hydrogen atoms terminated on its surface are not detached, and (2) a step of obtaining a silicon nitride oxide film 42A by subjecting the obtained silicon oxide film 42 to a nitriding process.

公开(公告)号：JPH11214379A

公开(公告)日：1999-08-06

申请号：JP1678398

申请日：1998-01-29

Applicant: SONY CORP

Inventor： KASHIWAGI AKIHIDE

IPC: H01L21/31 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To provided a method for forming a silicon oxide film for preventing generation of ruggedness (projections and recession) on the surface of a silicon layer, at forming a silicon oxide film on the surface of the silicon layer, and for forming the silicon oxide film the characteristics of which is superior without forming a dry oxide film on the surface of the silicon layer, and for quickly forming the relatively thick silicon oxide film. SOLUTION: A method for forming a silicon oxide films is an oxidizing method, using wet gas in an atmospheric temperature in which silicon atoms are not isolated from the surface of the silicon layer, and this method is constituted of a process for starting formation of the silicon oxide film on the surface of the silicon layer, and forming the silicon oxide film until desired thickness can be obtained. Then, the pressure of the wet gas is set to exceed 1.01.×10 Pa.

公开(公告)号：JPH11204517A

公开(公告)日：1999-07-30

申请号：JP396398

申请日：1998-01-12

Applicant: SONY CORP

Inventor： SUZUKI ATSUSHI ,  KASHIWAGI AKIHIDE

IPC: H01L21/31 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To provide a silicon oxide film forming method which is capable of reducing the formation of a dry oxide film on a silicon layer, when a silicon oxide film is formed on the surface of the silicon layer, and form a silicon oxide film superior in characteristics. SOLUTION: In this forming method of a silicon oxide film, (A) a combustion chamber 30 for forming water vapor through the combustion of hydrogen gas with oxygen gas, (B) a water vapor forming equipment 34 for forming water vapor by a method other than combustion of hydrogen gas with oxygen gas, and (C) a silicon oxide film forming equipment provided with a treatment chamber 10 for forming a silicon oxide film on the surface of a silicon layer are used. After the treatment chamber 10 has been filled with oxygen gas accompanied by water vapor formed with the vapor forming equipment 34, formation of vapor is started in the combustion chamber 30, and the silicon oxide film is formed on the surface of the silicon layer in the treatment chamber 10 by the use of the water vapor formed in the combustion chamber 30.

公开(公告)号：JPH1167747A

公开(公告)日：1999-03-09

申请号：JP22516497

申请日：1997-08-21

Applicant: SONY CORP

Inventor： KASHIWAGI AKIHIDE

IPC: H01L21/31 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To decrease the formation of a dry oxide film on a surface by supplying inert gas when steam is generated in a combustion chamber by the supply of hydrogen gas, keeping the temperature, at which silicon atoms are not desorbed, forming a silicon oxide film, increasing the temperature, and further forming the silicon oxide film. SOLUTION: The substrate having a silicon layer is arranged in a processing chamber 10 of inactive gas atmosphere, wherein the temperature is maintained so that silicon atoms are not desorbed. Then, after at least the supply of oxygen gas into a combustion chamber 30 is started, steam is generated in the combustion chamber 30 by the supply of hydrogen gas into the combustion chamber 30. Until the time when the steam is supplied into the processing chamber 10, inactive gas is supplied into the processing chamber 10. Thus, the concentration of the oxygen gas in contact with the silicon layer can be sufficiently decreased before the silicon oxide film is formed by the steam. The formation of the silicon oxide film by the oxigen gas (formation of the dry oxide film) can be controlled.