公开(公告)号：JP2002203961A

公开(公告)日：2002-07-19

申请号：JP2000403168

申请日：2000-12-28

Applicant: SONY CORP

Inventor： KATAOKA TOYOTAKA ,  SAITO MASAKI

IPC: C23C16/42 ,  C23C16/511 ,  H01L21/31 ,  H01L21/316 ,  H01L21/318 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To enhance reliability on a gate insulating film by preventing the diffusion of hydrogen to the gate insulating film, too, in making the gate insulating film the stack type of a silicon oxide film and a silicon nitride film so as to prevent boron atoms from diffusing to a silicon semiconductor substrate. SOLUTION: The stacked gate insulating film 44 of a silicon oxide film 42 and a silicon nitride film 43 is made through the process (A1) of forming the silicon oxide film 42 on the surface of an semiconductor layer ( silicon wafer 40), and the process (A2) of stacking the silicon nitride film 43 on the above silicon oxide film 42 by applying electromagnetic waves to the mixture gas between silicon compound gas not containing hydrogen and nitrogen gas or silicon compound gas not containing hydrogen.

公开(公告)号：JP2001127280A

公开(公告)日：2001-05-11

申请号：JP30216799

申请日：1999-10-25

Applicant: SONY CORP

Inventor： KATAOKA TOYOTAKA

IPC: H01L29/78 ,  H01L21/316 ,  H01L29/423 ,  H01L29/43 ,  H01L29/49 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device wherein, at post-oxidation for improved characteristics and reliability, a metal layer constituting a gate electrode is prevented from being oxidized while the fluctuation in threshold voltage is suppressed. SOLUTION: The method for manufacturing a p-channel type semiconductor device comprises a process A where a gate insulating film 22 is formed on the surface of a semiconductor layer 20, a process B where a gate electrode 23 is formed where a metal layer 23C and a silicon layer 23A comprising p-type impurity are laminated, a process C where an oxidizing gas permeable layer 25 is so formed on the semiconductor layer 20 as to cover the side surface of silicon layer 23A while allows the metal layer 23C to protrude, a process D where an oxidation-resistant layer 27 covers the top surface and side surface of the metal layer 23C which protrudes above the oxidizing gas permeable layer 25, a process E where the oxidizing gas permeable layer 25 is selectively removed and is left out on the side surface of silicon layer 23A, and a process F where an oxide film 23D is formed on the side surface of silicon layer 23A by a thermal process in an oxidizing atmosphere.

公开(公告)号：JP2000332245A

公开(公告)日：2000-11-30

申请号：JP14470699

申请日：1999-05-25

Applicant: SONY CORP

Inventor： KATAOKA TOYOTAKA

IPC: H01L29/78 ,  H01L21/31 ,  H01L21/316 ,  H01L21/336 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/088 ,  H01L27/092

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a p-type semiconductor element with which the surface of a polysilicon layer can be oxidized selectively and, in addition, can suppress the threshold voltage fluctuation of a semiconductor element caused by post-oxidation as much as possible, when the post- oxidation is performed on a gate electrode having a polymetal structure. SOLUTION: A method for manufacturing a p-type semiconductor element includes (A) a step of forming a gate insulating film 22 on the surface of a semiconductor layer, (B) a step of forming a gate electrode 22 composed of a silicon layer 23A containing a p-type impurity and a metallic layer 23C laminated upon the layer 23A (B), and (C) a step of forming an oxide film 24 on the exposed surface of the silicon layer 23A by exposing the gate electrode 23 to steam and a hydrogen gas produced by having upon oxygen gas and the hydrogen gas irradiated with electromagnetic wave, and in addition, suppressing the oxidation of the metallic layer 23C.

公开(公告)号：JPH11354516A

公开(公告)日：1999-12-24

申请号：JP15960698

申请日：1998-06-08

Applicant: SONY CORP

Inventor： KASHIWAGI AKIHIDE ,  KATAOKA TOYOTAKA ,  SUZUKI TOSHIHIKO

IPC: H01L21/31 ,  C23C8/02 ,  C23C8/16 ,  C30B33/00 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To prevent a metallic member constituting a silicon oxide film forming device from being corroded due to moisture, and to generate the in-plane non- uniformity of the film thickness of a silicon oxide film. SOLUTION: In a method for forming a silicon oxide film, a silicon oxide film forming device provided with a processing chamber 10 and a dew drop preventing and evaporating means 40 for preventing steam from being condensed in the processing chamber 10 or for evaporating water condensed in the processing chamber is used. In this case, a substrate having a silicon layer is carried to the processing chamber 10, and steam is introduced to the processing chamber 10, and a silicon layer surface is thermally oxidized. Then, in a state that steam is not condensed in the processing chamber 10, or that water condensed in the processing chamber 10 is evaporated, the substrate is carried out of the processing chamber 10.

公开(公告)号：JPH11340225A

公开(公告)日：1999-12-10

申请号：JP14552998

申请日：1998-05-27

Applicant: SONY CORP

Inventor： KATAOKA TOYOTAKA

IPC: H01L29/78 ,  H01L21/318

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming an insulating film, whereby it is possible to positively prevent the penetrating phenomenon of boron atoms, to avoid the generation of the problem of reduction in a current drive capability of a p-channel MOS semiconductor element, and moreover to form an extremely thin insulating film. SOLUTION: A method for forming an insulating film includes (a) an oxidizing step, in which an oxide film 12 is formed on a surface of a semiconductor layer 10, and (b) a nitriding step in which nitrogen gas is brought into contact with a heated catalyst and is emitted onto the oxide film 12, so as to form a nitride film 13 on the surface of the oxide film 12.

公开(公告)号：JPH11162971A

公开(公告)日：1999-06-18

申请号：JP32624397

申请日：1997-11-27

Applicant: SONY CORP

Inventor： KATAOKA TOYOTAKA

IPC: H01L29/78 ,  H01L21/316 ,  H01L21/318

Abstract: PROBLEM TO BE SOLVED: To form a thin oxide film stably by humidifying oxidation method, by forming an oxide film on the surface of a semiconductor layer using steam produced by applying electromagnetic waves to hydrogen gas and oxygen gas, and further, nitriding the surface of the oxide film by nitrogen molecules in excitation state produced from nitrogen gas. SOLUTION: Hydrogen gas and oxygen gas are introduced into a processing chamber 10 from gas introduction parts 16A and 16B. Steam is produced by applying electromagnetic waves to hydrogen gas and oxygen gas. The produced steam reaches a reaction region 10B positioned under a processing chamber 10, and the surface of a semiconductor layer 20 heated by a heating means 12 is oxidized. That is, an oxide film can be made on the surface of the semiconductor layer 20. Then, nitrogenous gas is introduced into the processing chamber 10 from a gas introduction part 16C. Nitrogen molecules or nitrogen atoms ions in excitation state produced by applying electromagnetic waves to the nitrogenous gas reach the reaction region 10B positioned under the processing chamber 10, and the surface of the oxide film is nitrided.

公开(公告)号：JPH11162970A

公开(公告)日：1999-06-18

申请号：JP32360197

申请日：1997-11-25

Applicant: SONY CORP

Inventor： KATAOKA TOYOTAKA

IPC: H01L29/78 ,  H01L21/31 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To prevent occurrence of explosive gas reaction caused by hydrogen of incomplete combustion, by introducing inert gas including hydrogen gas and oxidative gas into a steam generator so as to generate steam, and oxidating the surface of a semiconductor by the steam so as to form an oxide film. SOLUTION: A plurality of silicon semiconductor substrates are carried into a board carrying-in/out part 20, and are placed on a quartz board 24, and nitrogen gas is introduced from a gas introduction part 21 into the board carrying-in/out part 20 so as to put the inside of the board carrying-in/out part 20 in nitrogen gas atmosphere. Then, a shutter 15 is opened, and the quartz board 24 is lifted by an elevator mechanism 23, and it is carried in a processing room 10. Next, oxygen gas is supplied from a pipe 33 while supplying hydrogen gas and nitrogen gas from pipes 32 and 34 into a steam generator 30, and the steam generated by the reaction between the oxygen gas and the hydrogen gas is introduced into a processing room 10 so as to oxidate the surface of a silicon semiconductor substrate 40 and form an oxide film.

公开(公告)号：JPH10173077A

公开(公告)日：1998-06-26

申请号：JP33085396

申请日：1996-12-11

Applicant: SONY CORP

Inventor： KATAOKA TOYOTAKA

IPC: H01L21/8247 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

Abstract: PROBLEM TO BE SOLVED: To obtain a semiconductor nonvolatile memory device in which stored carriers are not leaked by a method wherein a second insulating film which is formed on a first semiconductor substrate via a first insulating film is faced with, and brought into close contact with, a third insulating film which is formed on a second semiconductor substrate, a heat treatment is executed and their faces which are brought into contact are pasted. SOLUTION: In a diffusion passage, a heat treatment is executed under conditions that the flow rate of N2 is 10 SLM, that a temperature is 1000 deg.C and that the time is two hours, a second insulating film 22 which is formed on a first semiconductor substrate 10 and a third insulating film 23 which is formed on a second semiconductor substrate 31 are pasted at their interface, and they are cut at the interface close to the first semiconductor substrate 10 of an ion-implanted layer 31a in the second semiconductor substrate 31. In their pasting process, many carrier traps are formed on the interface between the second insulating film 22 and the third insulating film 23. Thereby, it is possible to manufacture a semiconductor nonvolatile memory device in which stored carriers are hard to leak and which is provided with a charge storage layer whose charge storage capability is excellent.

公开(公告)号：JPH08340056A

公开(公告)日：1996-12-24

申请号：JP14500495

申请日：1995-06-12

Applicant: SONY CORP

Inventor： SUZUKI ATSUSHI ,  KATAOKA TOYOTAKA ,  SUZUKI TOSHIHIKO

IPC: H01L21/8247 ,  H01L21/316 ,  H01L21/318 ,  H01L29/788 ,  H01L29/792

Abstract: PURPOSE: To control the desired stress leak current resistance of a silicon insulating film by controlling the concentration of nitrogen introduced to a silicon oxide film by nitriding the silicon oxide film in a nitrogen oxide atmosphere after the silicon oxide film is formed on a silicon substrate. CONSTITUTION: A silicon oxide film 12 is formed on the surface of a semiconductor substrate 10 composed of a P-type silicon substrate by using a humidifying oxidizing method. After the film 12 is formed, a silicon insulating film 13 is formed by oxidizing and nitriding the film 12 in an oxygen gas atmosphere and a gate electrode 14 composed of N-type polysilicon containing diffused phosphorus is formed on the film 13 by using a CVD technique. Therefore, the desired stress leak current resistance of the film 13 can be improved, because the resistance can be controlled by controlling the concentration of the nitrogen introduced to the film 12.

公开(公告)号：JPH08172091A

公开(公告)日：1996-07-02

申请号：JP31617294

申请日：1994-12-20

Applicant: SONY CORP

Inventor： KATAOKA TOYOTAKA ,  SUZUKI ATSUSHI

IPC: H01L21/8247 ,  H01L21/318 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792

Abstract: PURPOSE: To provide a method of forming an insulating film, which has a high reliability to a pressure resistance and consists of an ONO structure, without exerting an effect on a substrate which is used as the base layer of the insulat ing film. CONSTITUTION: A lower oxide film 12 is formed on a substrate 11 and after a nitride film 13 is formed on the film 12, a silicon film 14 consisting of amorphous silicon is formed on the film 13. A thermal oxidation treatment using a high-speed thermal oxidation of the film 14 is performed and an upper oxide film 14a, which is formed by oxidizing the film 14, is formed. Thereby, an insulating film 15, which has the film 14a having little defect density and consists of an ONO structure, is formed on the substrate 11 without exerting the effect of the thermal oxidation treatment on the substrate 11.