公开(公告)号：JPS6142855B2

公开(公告)日：1986-09-24

申请号：JP4385378

申请日：1978-04-14

Applicant: SONY CORP

Inventor： HAYAFUJI TAKANORI ,  KAWATO SEIJI ,  AOKI YOSHIO ,  WAKAYAMA SHOJI

IPC: H01L29/167 ,  H01L21/20 ,  H01L21/205 ,  H01L21/322 ,  H01L21/331 ,  H01L29/02 ,  H01L29/32 ,  H01L29/73

公开(公告)号：JPS6125214B2

公开(公告)日：1986-06-14

申请号：JP8321079

申请日：1979-06-29

Applicant: Sony Corp

Inventor： HAYAFUJI TAKANORI ,  AOKI YOSHIO ,  KAWATO SEIJI

IPC: H01L21/322 ,  H01L21/265 ,  H01L21/268

CPC classification number: H01L21/268

公开(公告)号：JPS5638828A

公开(公告)日：1981-04-14

申请号：JP11501779

申请日：1979-09-07

Applicant: SONY CORP

Inventor： KAWATO SEIJI

IPC: H01L21/322 ,  H01L21/268

Abstract: PURPOSE:To improve characteristics of an element by a method wherein defects in a semiconductor layer are removed by irradiating a laser beam on the expected surface of element formation immediately before and/or after performance of a heat oxidation process for the semiconductor layer. CONSTITUTION:On a silicon wafer 1 having a plurality of laminer defect generating nuclei 2, the laser beam 3 capable of fusing the surface region is irradiated and a clean region 4 is formed, and then an element is obtained by performing an ordinary heat oxidation processing. Or, the stacking faults caused by the heat oxidation can be removed by irradiating the laser beam after performance of the heat oxidation processing. Thus, an annealing is performed without having a high temperature heat treatment, thereby enabling to broden the width of selection of annealing time and also to selectively perform a gettering of defects on an optional region.

公开(公告)号：JPS5565438A

公开(公告)日：1980-05-16

申请号：JP13969678

申请日：1978-11-13

Applicant: SONY CORP

Inventor： KAWATO SEIJI

IPC: H01L21/306 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/322 ,  H01L21/336 ,  H01L29/78

Abstract: PURPOSE:To effectively prevent omission generating inside the substrate by first forming crystal omission layer on the surface region of semiconductor substrate, then changing it into an oxide layer by only the prescribed thickness followed by etching to remove it. CONSTITUTION:SiO2 film 5 is attached to an N-type Si substrate 1, a window is opened in the prescribed region, from said window the impurities are diffused to form the P-type source and drain regions 6, 7. Next, from the surface the ions such as Si , Ar , Cl are irradiated to generate a shallow damage layer 9 on the whole surface of substrate 1 including the regions 6, 7 to change it by anealing in inert gas into the secondary omission layer 10, and to make here getter omission generating cores and metallic impurities. Thereafter the film 5 is removed to change the layer 10 into the SiO2 film 11 by performing high pressure oxidation, which is again removed by etching to be newly coated with gate SiO2 film 12. Next, thereon as normally, gate electrode metal is provided to make MOSFET.

公开(公告)号：JPS54125984A

公开(公告)日：1979-09-29

申请号：JP3365578

申请日：1978-03-24

Applicant: SONY CORP

Inventor： HAYAFUJI TAKANORI ,  KAWATO SEIJI

IPC: H01L21/306 ,  H01L21/30 ,  H01L21/316 ,  H01L21/322 ,  H01L21/331 ,  H01L29/02 ,  H01L29/73

Abstract: PURPOSE:To prevent occurrence of the defect by setting the thickness to about 100mum or less at the element forming area of the semiconductor wafer. CONSTITUTION:No eduction substance cannot be produce even through the heat oxidation and the like at the region of about 50mum depth from the wafer surface. In case the wafer element forming part is a thin layer of 100mum or less, the inside O2 shifts to the surface and is thus taken into SiO2 at the time of various kinds of heat treatments otherwise discharged outside. Thus, the inside O2 density features the level less than the solid solution limit, producing no eduction substance. Furthermore, the both surfaces function to be the area where the crystal defect can be avoided, but the inside impurity or dislocation cannot reach the both surfaces. As a result, the impurity is included by the oxide film to be discharged outside, and the dislocation is eliminated on both surfaces, thus no shallow pit being produced after the heat oxidation even for the wafer produced by the FZ method. In addition to formation of the uniform and thin part onto the substrate, the concavity is formed with the pierced hole or the bottom thickness of under 100mum. And the space between the concavities of holes is set to 100mum or less in order to prevent occurrence of the defect. With use of such wafer, semiconductor device can be obtained with high performance.

公开(公告)号：JPS5480671A

公开(公告)日：1979-06-27

申请号：JP14864977

申请日：1977-12-10

Applicant: SONY CORP

Inventor： AOYAMA JIYUNICHI ,  KAWATO SEIJI

IPC: H01L21/66 ,  G01N21/27 ,  H01L21/22 ,  H01L21/322

Abstract: PURPOSE:To prevent the Cu alloy from being formed on the surface of semiconductor layer, by suppressing the amount of Cu diffusion less than Cu solid limit, through the immersion of wafer to Cu solution of a given concentration. CONSTITUTION:Cu 1g of high purity is solved with a trace of HNO3, and solution A is obtained by diluting it into 1000 ml of water with purity, and further solution B is obtained by diluting the solution A into 100 times with high purity water, and the solutions A and B are mixed and diluted with fluoric hydrogen acid of 50 concentration and high purity water, obtaining Cu-HF solution. The condition in this case is to satisfy the following: Cu concentration in acid solution X(thickness of semiconductor layer/300)d exp{-1.2/(Boltsman constant X Cu diffusion temperature)}. Cu is attached on the surface of semiconductor layer by immersing the semiconductor layer to the acid solution of Cu, and the Cu is diffused to the semiconductor layer with heat treatment.

公开(公告)号：JPS5358782A

公开(公告)日：1978-05-26

申请号：JP13509976

申请日：1976-11-08

Applicant: SONY CORP

Inventor： HAYAFUJI TAKANORI ,  KAWATO SEIJI

IPC: H01L29/762 ,  H01L21/339 ,  H01L21/8234 ,  H01L27/06 ,  H01L29/04 ,  H01L29/76 ,  H01L29/772 ,  H01L29/78

Abstract: PURPOSE:A semiconductor device capable of reducing the production of lattice defects such as dislocation, etc. owing to heat tretment is obtained.

公开(公告)号：JP2000097887A

公开(公告)日：2000-04-07

申请号：JP27204398

申请日：1998-09-25

Applicant: SONY CORP

Inventor： RYU KOSUKE ,  KUDO YOSHIHIRO ,  KAWATO SEIJI ,  ENOMOTO MASAHISA

IPC: G01N23/223 ,  G21K1/06

Abstract: PROBLEM TO BE SOLVED: To reduce a size as the whole analyzer, and to stably conduct inspection. SOLUTION: This analyzer 10 has a hollow part 14a, and is provided with a chamber 14 arranged with an object W inside the hollow part 14a, an excitation light source 17 for irradiating the object W with an excited ray to inspect the object W, a detector 16 arranged in a position facing to the object W to inspect a surface of the object W, an object holding part 15 arranged inside the chamber 14 to hold movably the object W for adjusting a positional relation between the object W and an optical axis of the excited ray, and a rotation mechanism 13 for holding rotatably the chamber 14 to change an angle between the object W and the optical axis of the excited ray.

公开(公告)号：JPH116724A

公开(公告)日：1999-01-12

申请号：JP16110697

申请日：1997-06-18

Applicant: SONY CORP

Inventor： RYU KOSUKE ,  KUDO YOSHIHIRO ,  KAWATO SEIJI

IPC: G01B15/02 ,  G01N23/20 ,  H01L21/66

Abstract: PROBLEM TO BE SOLVED: To achieve a highly accurate evaluation of the materiality of a thin film even when a measured film is thin, by a method wherein X rays are admitted in a state where a second thin film is formed on the measured film to stress, and a data is taken out reflecting the property of matter of a measured object from an intensity vibration component. SOLUTION: An envelope of an intensity vibration component sensitively reflects the materiality of a lower part of a second thin film 11 specially formed, namely, that of the surface of a sample before the formation of the film while being least affected by the thickness and the density of the second thin film 11 formed. The second thin film 11 with the thickness d1 is provided on a measured film 12 to improve the sensitivity. X rays 1a are admitted into such a sample to perform a measurement while varying glancing angle. The cycle and amplitude of vibration of the envelope almost coincide with the cycle and amplitude of a reflectance intensity vibration component as obtained without preprocessing. Thus, by finding the cycle and the amplitude of the envelope using a parameter fitting, values of the thickness d2 and a refractive index δ of the measured film 12 can be estimated.

公开(公告)号：JPH10301785A

公开(公告)日：1998-11-13

申请号：JP10464797

申请日：1997-04-22

Applicant: SONY CORP

Inventor： RYU KOSUKE ,  KUDO YOSHIHIRO ,  KAWATO SEIJI

IPC: G06F9/44

Abstract: PROBLEM TO BE SOLVED: To simplify programming by automating memory securing and releasing for a temporary instance appearing in the middle of the arithmetic operation of a data processing. SOLUTION: The instances of respective classes are provided with the storage area of a flag (temporary flag) for indicating whether or not the instance is the temporary one. In a function provided with the instance of the class type as a return value, the storage area for supplying the value of the result of the function is secured and the temporary flag of the instance of the result is set to 'True'. On the other hand, for the instance clearly declared by a programmer, the temporary flag is turned to 'False'. Then, in the case that the function and a procedure for which the instance belonging to the class is an argument are executed, when the one whose temporary flag is 'True' is present, the memory of the instance is released. In such a manner, the physical memory is kept secured until clearly released by the programmer.