公开(公告)号：JPH03214102A

公开(公告)日：1991-09-19

申请号：JP963390

申请日：1990-01-19

Applicant: SONY CORP

Inventor： MATSUDA OSAMU ,  TANIGUCHI TADASHI

IPC: G02B6/42 ,  G02B5/04 ,  G11B7/135

Abstract: PURPOSE:To decrease the generation of noise by the return light to a laser by confining the reflectivity of the light incident surface of a prism to

公开(公告)号：JPH03183035A

公开(公告)日：1991-08-09

申请号：JP32112089

申请日：1989-12-11

Applicant: SONY CORP

Inventor： TANIGUCHI TADASHI ,  MATSUDA OSAMU ,  MAEDA KOICHI ,  HIBI NAOFUMI

IPC: G02B5/00 ,  G02B27/00 ,  G11B7/135

Abstract: PURPOSE:To prevent a prism from being pealed off, the characteristic change due to stress to a semiconductor substrate or generation of a defective product by providing a thin part on the semiconductor base side of a stray light absorbing part forming surface, and arranging a light absorbing member on this thin part. CONSTITUTION:On a semiconductor base 1 equipped with a light emitting element 3, prism 2 is loaded and read light 7 is guided from a prescribed surface 9 into the prism 2 and the position relation for guiding the light into the element 3 is selected. Then, the prism is adhered and arranged optically and mechanically by an adhesive agent 6. This prism 2 is formed by extending the thin part 12 along a coupling surface 15 with the base 1 from a stray light absorbing surface 4 on the base side. Thus, even when a light absorbing member 5 is expanded or contracted by a temperature change to setting shrinkage is generated by using thermosetting resin, etc., as this light absorbing member 5, stress is not generated in the prism 2, the adhesive agent 6 and the base 1 since the stress is mainly operated only to the upper surface of the thin part 12 and the surface 4.

公开(公告)号：JPH02278779A

公开(公告)日：1990-11-15

申请号：JP9922189

申请日：1989-04-19

Applicant: SONY CORP

Inventor： MATSUDA OSAMU ,  MAEDA KOICHI ,  KUME HIDEHIRO

IPC: H01S3/101 ,  G11B7/125 ,  H01S5/00 ,  H01S5/026

Abstract: PURPOSE:To detect, in a high S/N ratio, an intrinsic signal by returned light from an optical recording medium by installing a stray-light reduction means in one part of a prism. CONSTITUTION:An optical integrated circuit A1 is constituted as an optical head H for a disk 20 after it has been combined with an object lens 19. In this case, the following are provided: light detectors 2a, 2b formed on a semiconductor substrate 1; a prism 3 which is fixed onto the light detectors 2a, 2b and which is provided with one semi-transmitting reflection face 3a; a semiconductor laser 5 fixed onto the semiconductor substrate 1 in the same manner. A stray-light reduction means is installed in one part of the prism 3. As the stray-light reduction means, a chamfered part 11 is formed at the tip of the semi-transmitting reflection face 3a of the prism 3; in addition, the surface of the chamfered part 11 is roughened. Thereby, it is possible to reduce stray light and to detect an intrinsic signal at a high S/N ratio.

公开(公告)号：JPH01136391A

公开(公告)日：1989-05-29

申请号：JP29581587

申请日：1987-11-24

Applicant: SONY CORP

Inventor： MATSUDA OSAMU ,  MATSUMOTO YOSHIYUKI ,  YAMAMOTO ETSUSHI

IPC: H01L31/12 ,  H01L27/15 ,  H01S5/00

Abstract: PURPOSE:To interrupt laser beams having high probability as stray light downward projected from a semiconductor laser element, and to reduce stray light by arranging the element onto a semiconductor substrate through a supporter and forming a stray-light shielding section to the supporter. CONSTITUTION:A stepped section 8 is shaped to a supporter 6, a semiconductor laser element 9 is positioned on the side rearer than the stepped section 8, and laser beams downward projected from the semiconductor laser element 9 and changed into stray light are interrupted by the stepped section 8. That is, length W projected from a beam outgoing end face 11 in the stepped section 8 and the depth D of the stepped section 8 are brought to proper values, thus interrupting only downward laser beams as stray light. Stray light is eclipsed by the stepped section 8, thus reducing stray light without damping a signal, then diminishing the quantity of offset. Consequently, tan (D/W) is made smaller than the angle of visibility of a collimator lens. When incident beams are also total-reflected by the interface between a prism 3 and adhesives 4, they are not projected to a photo-diode 2 because they are reflected by the interface, and are not turned into stray light.

公开(公告)号：JPS63278353A

公开(公告)日：1988-11-16

申请号：JP11423487

申请日：1987-05-11

Applicant: SONY CORP

Inventor： MATSUDA OSAMU ,  IWATA MASAHISA

IPC: H01L23/02

Abstract: PURPOSE:To perform the processing of sealing a package with good controllability and productivity by forming high thermal absorptivity shape or layer of thermoplastic resin on at least one of package sealing sections, heating it by radiating means to melt the sealing section and sealing the package. CONSTITUTION:A semiconductor element 3 is previously secured to a header 1 to be connected to an electrode 4 formed of a lead frame, a cap 2 is covered and sealed. The sectional shape of the bump 2a of the cap 2 is preferably formed in a sharp state to have good thermal absorptivity, i.e., to be easily melted when it is heated, but may be of other shape, such as a dome state. In case of sealing it, the bump 2a of the cap is brought into contact with the sealing part la of the header 1, suitably pressed, and, if the cap 2 is transparent, a laser light is, for example, transmitted from a direction A to irradiate the bump 2a. Then, since the bump 2a has a small shape and a low thermal capacity, it is easily melted by the heat of the laser. When it is melted, it is fusion- bonded to the sealing part of the header 1. Thus, the sealing step is simplified to improve productivity.

公开(公告)号：JPS63114237A

公开(公告)日：1988-05-19

申请号：JP26004486

申请日：1986-10-31

Applicant: SONY CORP

Inventor： KOMA KOTARO ,  MATSUDA OSAMU

IPC: H01L31/12 ,  H01L21/321 ,  H01L21/60 ,  H01S5/00

Abstract: PURPOSE:To prevent easy separation of an aluminum wiring film due to the formation of a reacting layer composed of tin and aluminum at an interface with a semiconductor substrate, by forming a titanium film on the aluminum wiring film, forming a silver film on the titanium film, and forming a solder layer on the silver film. CONSTITUTION:A titanium film 9 is formed on an aluminum wiring film 7. A silver film 10 is formed on the titanium film 9. A solder layer 12 is formed on the silver film 10. The titanium film 9 formed on the aluminum wiring film 7 enhances adhesion of the aluminum wiring film 7 and the silver film 10. The silver film 10 suppresses the reaction of the titanium film 9 and tin in the solder layer 12. Intrusion of the tin in the solder layer 12 into the aluminum wiring film 7 through the silver film 10 is suppressed by the titanium film 9. Thus the formation of a reacting layer of the aluminum and the tin at the interface between the aluminum wiring film 7 and a semiconductor substrate 1 is prevented, and easy separation of the aluminum wiring film 7 from the semiconductor substrate is prevented.

公开(公告)号：JPS6390885A

公开(公告)日：1988-04-21

申请号：JP23696186

申请日：1986-10-04

Applicant: SONY CORP

Inventor： MATSUDA OSAMU

IPC: H01L31/12 ,  H01S5/00

Abstract: PURPOSE:To enable the manufacture of a high-precision, small-sized and inexpensive optical device such as prism by forming, on a transparent crystal substrate sliced into a wafer in a predetermined crystal plane, an etching mask layer having window sections disposed therein, performing an anisotropical etching to form hole sections having a sloped surface, and thereafter dicing the substrate. CONSTITUTION:A transparent crystal substrate 1 sliced into a wafer in a predetermined crystal plane is prepared, an etching mask layer 5 is formed thereon in which window sections 6 for etching are regularly disposed, and an anisotropical etching is performed, thereby forming a hole section 7 having a sloped surface 8 under each window section 6 for etching. Thereafter, a crystal substrate 1 is diced, providing many optical devices 10 having the sloped surface 8 as one end face. For instance, in the predetermined positions on both surfaces 2, 3 of a wafer-shaped crystal substrate 1 composed of a single crystal of GaP which was sliced in a plane inclined about 5.3 deg. from the plane (001) to the direction, reflective films 4, 4 are formed. Then, an etching mask layer 5 is formed, an anisotropical etching is performed to form hole sections 7, and thereafter dicing the substrate, thereby obtaining prisms 10 having a trpezoidal cross-sectional shape.

公开(公告)号：JPS5914688A

公开(公告)日：1984-01-25

申请号：JP12348182

申请日：1982-07-15

Applicant: Sony Corp

Inventor： AYABE MASAAKI ,  MATSUDA OSAMU ,  MORI YOSHIFUMI

IPC: H01S5/00 ,  H01S5/20 ,  H01S5/223 ,  H01S5/24

CPC classification number: H01S5/2059 ,  H01S5/2237 ,  H01S5/24

Abstract: PURPOSE:To obtain a laser which can be readily manufactured and has uniform characteristics by forming a region which internally limits the current by utilizing the resultant difference of diffusing phenomena of impurity between the oblique part and the flat part of a hetero junction. CONSTITUTION:An oblique surface 1a1 which is extended in one direction is formed on the surface of a p type GaAs substrate 1, a p type GaAs buffer layer 7, a P type AlGaAs layer 8, an n type AlGaAs layer 9 are laminated and epitaxially grown on the entire surface which includes the surface. Then, an n type AlGaAs layer 10, a p type layer 4 which is formed to be flat while burying the oblique surface 1a1 produced so far, an AlGaAs active layer 2 which does not specify the conductive type, an n type AlGaAs clad layer 3, and an n type GaAs layer 14 are laminated and grown on the layer. A current passage 13 is naturally produced on the oblique surface of the layer 10 during the step of continuously epitaxially growing, and limited at the part 5 of the layer 10 which surrounds it. In this manner, the formation is simplified, thereby enhancing the mass productivity.

Abstract translation: 目的：通过利用异质结的倾斜部分和平坦部分之间的杂质扩散现象的差异，形成内部限制电流的区域，以获得容易制造并具有均匀特性的激光。 构成：在p型GaAs衬底1的表面上形成一个沿一个方向延伸的倾斜表面1a1，ap型GaAs缓冲层7，P型AlGaAs层8，n型AlGaAs层9层叠并外延生长在 包括表面的整个表面。 然后，n型AlGaAs层10，形成为平坦的p型层4，掩埋迄今为止制造的倾斜表面1a1，不指定导电类型的AlGaAs活性层2，n型AlGaAs覆盖层3， 并且在该层上层叠并生长n型GaAs层14。 在连续外延生长的步骤期间，自然地在层10的倾斜表面上产生电流通道13，并限制在其周围的层10的部分5。 以这种方式，简化了结构，从而提高了批量生产率。

公开(公告)号：JPS5723291A

公开(公告)日：1982-02-06

申请号：JP9739780

申请日：1980-07-16

Applicant: Sony Corp

Inventor： MATSUDA OSAMU ,  MORI YOSHIFUMI ,  MORISANE KENJI ,  AYABE MASAAKI

IPC: H01S5/00 ,  H01S5/22 ,  H01S5/40

CPC classification number: H01S5/2203 ,  H01S5/4043

Abstract: PURPOSE:To intensify the light output as well as decrease the spreading angle of a radiated beam, by permitting the oscillation in a single mode, by providing a plurality of active layers with a necessary distance relationship thereamong, and by making the position of the maximum light intensify exist in the region having a large energy gap width outside the active layers. CONSTITUTION:Epitaxially grown on a semi-insulative or n type GaAs substrate 11 in a laminating manner are an n type Al0.35Ga0.65As clad layer 12 having an energy gap width larger than those of active layers 13 and 15, the n type GaAs active layer 13 having an energy gap width smaller than this, an n type Al0.2Ga0.8As cavity layer 14 having an energy gap width larger than that, the n type active layer 15 the same as the layer 13, an n type cavity layer 16 the same as the layer 14, and an n type GaAs cap layer 17. Then, carrier injection regions (a) and (b) are provided in the parts of the first and second active layers 13 and 15 where a p-n junction J crosses. In this case, the distance between the regions (a) and (b) is specified so that the rays of light emitted when a forward voltage is applied between electrodes 20 and 21 interfere with each other to become maximum as C marked with X.

Abstract translation: 目的：通过在单一模式下允许振荡，通过提供具有必要距离关系的多个有源层，并通过使最大的位置位置来增强光输出以及减小辐射束的扩展角度 在活性层外侧具有大的能隙宽度的区域存在光强化。 构成：以层叠方式在半绝缘或n型GaAs衬底11上外延生长的是具有比有源层13和15的能隙宽度大的能隙间隙宽度的n型Al0.35Ga0.55As包层12，n型GaAs 具有小于该能隙宽度的有源层13，具有大于能隙间隙宽度的n型Al0.2Ga0.8As空腔层14，与层13相同的n型有源层15，n型空腔层 16，与层14相同，n型GaAs覆盖层17.然后，载流子注入区域（a）和（b）设置在第一和第二有源层13和15的部分中，其中pn结J交叉 。 在这种情况下，指定区域（a）和（b）之间的距离，使得当在电极20和21之间施加正向电压时发射的光线彼此干扰，以C标记为X时变得最大。

公开(公告)号：JPS5596693A

公开(公告)日：1980-07-23

申请号：JP377879

申请日：1979-01-16

Applicant: SONY CORP

Inventor： MATSUDA OSAMU

IPC: H01S5/00 ,  H01S5/042

Abstract: PURPOSE:To provide a semiconductor laser which incorporates excellent linearity by reducing the width of mirror surface portion of opening wall surfaces at both end surfaces longitudinally intersecting with stripe current region lower than that of the stripe current region. CONSTITUTION:An n-type compound semiconductor layer 12 having a band gap width of the material of an active layer 13, and active layer 13 having p-type or n-type compound semiconductor layer, a p-type compound semiconductor layer 14 having larger band gap width than the material of the layer 13 and a p-type compound semiconductor layer 15 are sequentially epitaxially grown in liquid phase on an n-type compound semiconductor substrate 11 to thereby provide a semiconductor substrate 10. Reference characters J1, J2 illustrate hetero junctions formed by the junction of the layers 12 and 14 arranged between the layer 13 and the upper and lower sides thereof. An isolating groove 16 for aiding to isolate along the opening wall is formed on the opposite main plane 10a to the substrate 11 in the stripe state of width Wg. Such grooves 16 are arranged in parallel at predetermined interval Wd of one pitch p linearly in such a manner that Wg>Wd is maintained.