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Patent Agency Ranking
公开(公告)号：CA999980A
公开(公告)日：1976-11-16
申请号：CA213927
申请日：1974-11-18
Applicant: SONY CORP
Inventor： YAGI HAJIME , TSUYUKI TADAHARU , KOMA KOTARO , MIYAZAWA YOSHIHIRO
IPC: H01L29/73 , H01L21/331 , H01L23/48 , H01L27/00 , H01L29/00
Abstract: A bipolar transistor has an emitter, a base, a collector and additional region which is electrically connected to the base region. The additional region is formed parallel to an emitter-base junction to inject minority carriers into the emitter and has a plurality of windows therein where a plurality of ohmic contacts for the emitter are located.
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公开(公告)号：DE2454561A1
公开(公告)日：1975-07-24
申请号：DE2454561
申请日：1974-11-18
Applicant: SONY CORP
Inventor： YAGI HAJIME , TSUYUKI TADAHARU , KOMA KOTARO , MIYAZAWA YOSHIHIRO , ATSUGI KANAGAWA
Abstract: A bipolar transistor has an emitter, a base, a collector and additional region which is electrically connected to the base region. The additional region is formed parallel to an emitter-base junction to inject minority carriers into the emitter and has a plurality of windows therein where a plurality of ohmic contacts for the emitter are located.
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公开(公告)号：JP2000077426A
公开(公告)日：2000-03-14
申请号：JP24372498
申请日：1998-08-28
Inventor： KOMA KOTARO , HIDA YUKIO
IPC: H01L21/22 , H01L21/337 , H01L21/338 , H01L29/778 , H01L29/808 , H01L29/812
Abstract: PROBLEM TO BE SOLVED: To control with good accuracy the depth of an impurity diffusion in a field-effect transistor and a P-N junction semiconductor device.
SOLUTION: A bonding layer 2 and a cap layer 3 are deposited on a semiconductor substrate 1, an insulating layer 4 for mask is formed on this cap layer 3 and after this, an aperture 7 is formed in this layer 4. After that, impurities are diffused in the layers 3 and 2 using the layer 4 as a mask, and after the parts of the layers 4 and 3 are removed to the layer 3, an electrode is formed on the layer 3. When the impurities are diffused in the layer 2, the diffusion takes place via the layer 3. Therefore, the depth of an impurity region, which is formed in the layer 2, is controlled accurately. As a result, when the semiconductor device is adopted for an HEMT, for example, irregularities in the Vths of the HEMT is decreased.
COPYRIGHT: (C)2000,JPOAbstract translation: 要解决的问题：以高精度控制场效应晶体管和P-N结半导体器件中的杂质扩散的深度。 解决方案：在半导体衬底1上沉积粘结层2和覆盖层3，在该覆盖层3上形成用于掩模的绝缘层4，此后在该层4中形成孔7。 使用层4作为掩模在层3和2中扩散，并且在将层4和3的部分去除到层3之后，在层3上形成电极。当杂质扩散到层 如图2所示，通过层3进行扩散。因此，精确地控制形成在层2中的杂质区域的深度。 结果，例如，当HEMT采用半导体器件时，HEMT的Vths的不规则性减小。
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公开(公告)号：JP2517929B2
公开(公告)日：1996-07-24
申请号：JP26004486
申请日：1986-10-31
Applicant: SONY CORP
Inventor： KOMA KOTARO , MATSUDA OSAMU
IPC: H01L31/12 , H01L21/321 , H01L21/60 , H01S5/00
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公开(公告)号：JPS63114237A
公开(公告)日：1988-05-19
申请号：JP26004486
申请日：1986-10-31
Applicant: SONY CORP
Inventor： KOMA KOTARO , MATSUDA OSAMU
IPC: H01L31/12 , H01L21/321 , H01L21/60 , H01S5/00
Abstract: PURPOSE:To prevent easy separation of an aluminum wiring film due to the formation of a reacting layer composed of tin and aluminum at an interface with a semiconductor substrate, by forming a titanium film on the aluminum wiring film, forming a silver film on the titanium film, and forming a solder layer on the silver film. CONSTITUTION:A titanium film 9 is formed on an aluminum wiring film 7. A silver film 10 is formed on the titanium film 9. A solder layer 12 is formed on the silver film 10. The titanium film 9 formed on the aluminum wiring film 7 enhances adhesion of the aluminum wiring film 7 and the silver film 10. The silver film 10 suppresses the reaction of the titanium film 9 and tin in the solder layer 12. Intrusion of the tin in the solder layer 12 into the aluminum wiring film 7 through the silver film 10 is suppressed by the titanium film 9. Thus the formation of a reacting layer of the aluminum and the tin at the interface between the aluminum wiring film 7 and a semiconductor substrate 1 is prevented, and easy separation of the aluminum wiring film 7 from the semiconductor substrate is prevented.
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