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    MAGENTA DIAZO COLORING MATTER, COLOR FILTER, AND SOLID-STATE IMAGE PICKUP DEVICE
    31.
    发明专利
    MAGENTA DIAZO COLORING MATTER, COLOR FILTER, AND SOLID-STATE IMAGE PICKUP DEVICE 失效

    公开(公告)号：JPH1088014A

    公开(公告)日：1998-04-07

    申请号：JP23901196

    申请日：1996-09-10

    Applicant: SONY CORP

    Inventor： MATSUZAWA NOBUYUKI ,  SHOJI HIROSHI ,  KISHII NORIYUKI

    IPC: G03F7/004 ,  C09B29/06 ,  G02B5/20 ,  G02B5/22 ,  H01L27/14

    Abstract: PROBLEM TO BE SOLVED: To provide a new magenta diazo coloring matter improved in light resistance and a solid-state image pickup device equipped with a color filter containing it and having a longer life. SOLUTION: This coloring matter is one represented by formula I (wherein R1 to R4 are each H or a suitable substituent; R18 is an electron accepting group; R17 (when R15 and R16 are each of formula II) or R16 (when R16 and R17 are each of formula II) is a weak electron donating group or an electron accepting group; R6 to R11 are each OH, an electron accepting group, a weak electron donating group, H, or of formula II, depending on the relation to each other; and R19 and R20 are each H, alkyl or substituted alkyl). It has a chemical structure of which the positions of substituents in the diazo moiety where the electron density is low and the reaction with oxygen molecules hardly proceeds are determined by theoretical calculation with a supercomputer.

    ELECTRONIC DEVICE MATERIAL AND MANUFACTURE THEREOF
    32.
    发明专利
    ELECTRONIC DEVICE MATERIAL AND MANUFACTURE THEREOF 失效

    公开(公告)号：JPH09283514A

    公开(公告)日：1997-10-31

    申请号：JP11328396

    申请日：1996-04-09

    Applicant: SONY CORP

    Inventor： MATSUZAWA NOBUYUKI ,  HASEGAWA TOSHIAKI

    IPC: C09D183/04 ,  H01L21/312 ,  H01L21/768 ,  H01L23/522

    Abstract: PROBLEM TO BE SOLVED: To improve an adhesion between a silicon oxide film and an organic material film which form an electronic device material, the organic material film being formed on the silicon oxide film. SOLUTION: In the electronic device material which is made up of a silicon oxide film and an organic material film formed thereon, a silane coupling agent is included in the organic material film. The electronic device material can be fabricated by coating on the silicon oxide film a composition for formation of the organic material film containing the silane coupling agent and matrix resin, or by depositing both the silane coupling agent and matrix resin to form the organic material film.

    PRODUCTION OF CARBON TUBE
    34.
    发明专利
    PRODUCTION OF CARBON TUBE 失效

    公开(公告)号：JPH07165406A

    公开(公告)日：1995-06-27

    申请号：JP27828794

    申请日：1994-10-18

    Applicant: SONY CORP

    Inventor： ATA MASAFUMI ,  KIJIMA YASUNORI ,  MATSUZAWA NOBUYUKI ,  IMOTO HIROSHI

    IPC: C01B31/00 ,  C01B31/02

    Abstract: PURPOSE:To provide carbon tubes made of a fullerene in high yield. CONSTITUTION:This method for producing carbon tubes is to fill a metal or its compound as a simple substance in the interior of an electrode graphite (3a) or mix the metal or its compound with a readily graphitizable carbon, fill the resultant mixture therein, bake the metal or its compound or the mixture, subsequently use the prepared electrode as a positive pole 3, use high-purity graphite as a negative pole 2, carry out the arc discharge in a vacuum chamber and separate the objective carbon tubes from a deposit formed on the negative pole 2. The metal is a transition metal such as vanadium, lanthanum, hafnium or gadolinium or a compound thereof. Thereby, rodlike or needlelike carbon tubes having 1-5mum outside diameter and >=20mum length or carbon nanotubes having 1-10nm outside diameter are obtained.

    OPTICAL RECORDING MATERIAL
    35.
    发明专利
    OPTICAL RECORDING MATERIAL 失效

    公开(公告)号：JPH04110189A

    公开(公告)日：1992-04-10

    申请号：JP22808690

    申请日：1990-08-31

    Applicant: SONY CORP

    Inventor： MATSUZAWA NOBUYUKI ,  HAYASHI YOKO ,  ATA MASAFUMI ,  TAMURA SHINICHIRO

    IPC: B41M5/26 ,  G11B7/24 ,  G11B7/244 ,  G11B7/247

    Abstract: PURPOSE:To obtain an optical recording material prevented from the characteristic deterioration of a cyanine dye due to the irradiation with light and having high light fastness by including the cyanine dye in an org. host molecule. CONSTITUTION:An optical recording material is composed of an inclusion composite of a cyanine dye and an org. host molecule including the cyanine dye. The org. host molecule is added to prevent singlet oxygen generated by the irradiation with light from approaching the methine chain of the cyanine dye and any one including a part or all of the methine chain of the cyanine dye may be used. Concretely, various dextrins such as alpha-dextrin, beta-dextrin or gamma-dextrin, crown ethers or calixarene are designated. The inclusion composite of the cyanine dye and the org. host molecule is formed by merely mixing the cyanine dye and the org. host molecule in a polar solvent.

    Antireflection film and exposure method
    37.
    发明专利
    Antireflection film and exposure method 有权
    抗反射膜和曝光方法

    公开(公告)号：JP2007220847A

    公开(公告)日：2007-08-30

    申请号：JP2006038805

    申请日：2006-02-16

    Applicant: Sony Corp ,  ソニー株式会社

    Inventor： MATSUZAWA NOBUYUKI ,  BOONTARIKA THUNNAKART ,  OZAWA KEN ,  KUROBE TOSHIHIRO ,  WATANABE YOKO

    IPC: H01L21/027 ,  G02B1/11 ,  G03F7/11 ,  G03F7/20

    Abstract: PROBLEM TO BE SOLVED: To provide an antireflection film capable of sufficiently reducing reflectance on an interface between a resist layer and a silicon semiconductor substrate, even if exposure light is made incident obliquely by one layer in a liquid immersion lithography technique, and to provide an exposure method. SOLUTION: The double layer structure antireflection film is used in exposing a resist layer in an exposure system having a wavelength of 190-195 nm and having a numerical aperture of 1.2-1.3, and is formed between the resist layer and a silicon nitride film formed on the surface of the silicon semiconductor substrate. When complex refractive indexes N 1 , N 2 of upper layer and lower layer constituting the antireflection film are expressed by the expressions; N 1 =n 1 -k 1 i, N 2 =n 2 -k 2 i, film thicknesses of the upper layer and lower layer are d 1 , d 2 and a predetermined combination is selected as the combination of values [n 10 , k 10 , d 10 , n 20 , k 20 , d 20 ], n 1 , k 1 , d 1 , n 2 , k 2 , d 2 satisfy the following relation: ä(n 1 -n 10 )/(n 1m -n 10 )} 2 +ä(k 1 -k 10 )/(k 1m -k 10 )} 2 +ä(d 1 -d 10 )/(d 1m -d 10 )} 2 +ä(n 2 -n 20 )/(n 2m -n 20 )} 2 +ä(k 2 -k 20 )/(k 2m -k 20 )} 2 +ä(d 2 -d 20 )/(d 2m -d 20 )} 2 ≤1. COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题：即使在液浸式光刻技术中使曝光光倾斜地入射一层，提供能够充分降低抗蚀剂层和硅半导体衬底之间的界面上的反射率的抗反射膜，以及 提供曝光方法。 解决方案：双层结构抗反射膜用于在波长为190-195nm并且数值孔径为1.2-1.3的曝光系统中曝光抗蚀剂层，并且形成在抗蚀剂层和硅之间 形成在硅半导体衬底的表面上的氮化物膜。 当复合折射率N 1 时，构成防反射膜的上层和下层的N 2 由表达式表示; N 1 = n 1 i，N 2 = n 2 -k 2，上层和下层的膜厚度为d SB> 1 ，d 2 ，并且选择预定的组合作为组合 的值[n 10 ，k 10 ，d 10 ，20 SB>，d 20 ，n 1 ，k 1 ，d 1 / SB>，k 2 ，d 2 满足以下关系：ä（n 1 -n 10 ） /（N 1M -n 10 ）} 2 + A（K 1 -k 10 < / SB>）/（K 1M -k 10 ）} 2 + A（D 1 -d < SB> 10 ）/（D 1M -d 10 ）} 2 + A（N 2 -n 20 ）/（N 2米 -n 20 ）} 2 + A（K 2 -k 20 ）/（K 2米 -k 20 ）} 2 + A（ ð 2 -d 20 ）/（D 2米 -d 20 ）} 2 ≤1。 版权所有（C）2007，JPO＆INPIT

    Antireflection film and exposure method
    38.
    发明专利
    Antireflection film and exposure method 有权
    抗反射膜和曝光方法

    公开(公告)号：JP2007220846A

    公开(公告)日：2007-08-30

    申请号：JP2006038804

    申请日：2006-02-16

    Applicant: Sony Corp ,  ソニー株式会社

    Inventor： MATSUZAWA NOBUYUKI ,  BOONTARIKA THUNNAKART ,  OZAWA KEN ,  KUROBE TOSHIHIRO ,  WATANABE YOKO

    IPC: H01L21/027 ,  G02B1/11 ,  G03F7/11 ,  G03F7/20

    Abstract: PROBLEM TO BE SOLVED: To provide an antireflection film capable of sufficiently reducing reflectance on an interface between a resist layer and a silicon semiconductor substrate, even if exposure light is made incident obliquely by one layer in a liquid immersion lithography technique, and to provide an exposure method. SOLUTION: The double layer structure antireflection film is used in exposing a resist layer in an exposure system having a wavelength of 190-195 nm and having a numerical aperture of 1.1-1.2, and is formed between the resist layer and a silicon nitride film formed on the surface of the silicon semiconductor substrate. When complex refractive indexes N 1 , N 2 of upper layer and lower layer constituting the antireflection film are expressed by the expressions; N 1 =n 1 -k 1 i, N 2 =n 2 -k 2 i, film thicknesses of the upper layer and lower layer are d 1 , d 2 and a predetermined combination is selected as the combination of values [n 10 , k 10 , d 10 , n 20 , k 20 , d 20 ], n 1 , k 1 , d 1 , n 2 , k 2 , d 2 satisfy the following relation: ä(n 1 -n 10 )/(n 1m -n 10 )} 2 +ä(k 1 -k 10 )/(k 1m -k 10 )} 2 +ä(d 1 -d 10 )/(d 1m -d 10 )} 2 +ä(n 2 -n 20 )/(n 2m -n 20 )} 2 +ä(k 2 -k 20 )/(k 2m -k 20 )} 2 +ä(d 2 -d 20 )/(d 2m -d 20 )} 2 ≤1. COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题：即使在液浸式光刻技术中使曝光光倾斜地入射一层，提供能够充分降低抗蚀剂层和硅半导体衬底之间的界面上的反射率的抗反射膜，以及 提供曝光方法。 解决方案：双层结构抗反射膜用于在波长为190-195nm并且数值孔径为1.1-1.2的曝光系统中曝光抗蚀剂层，并且形成在抗蚀剂层和硅之间 形成在硅半导体衬底的表面上的氮化物膜。 当复合折射率N 1 时，构成防反射膜的上层和下层的N 2 由表达式表示; N 1 = n 1 i，N 2 = n 2 -k 2，上层和下层的膜厚度为d SB> 1 ，d 2 ，并且选择预定的组合作为组合 的值[n 10 ，k 10 ，d 10 ，20 SB>，d 20 ，n 1 ，k 1 ，d 1 / SB>，k 2 ，d 2 满足以下关系：ä（n 1 -n 10 ） /（N 1M -n 10 ）} 2 + A（K 1 -k 10 < / SB>）/（K 1M -k 10 ）} 2 + A（D 1 -d < SB> 10 ）/（D 1M -d 10 ）} 2 + A（N 2 -n 20 ）/（N 2米 -n 20 ）} 2 + A（K 2 -k 20 ）/（K 2米 -k 20 ）} 2 + A（ ð 2 -d 20 ）/（D 2米 -d 20 ）} 2 ≤1。 版权所有（C）2007，JPO＆INPIT

    Antireflection film and exposure method
    39.
    发明专利
    Antireflection film and exposure method 有权
    抗反射膜和曝光方法

    公开(公告)号：JP2007220845A

    公开(公告)日：2007-08-30

    申请号：JP2006038803

    申请日：2006-02-16

    Applicant: Sony Corp ,  ソニー株式会社

    Inventor： MATSUZAWA NOBUYUKI ,  BOONTARIKA THUNNAKART ,  OZAWA KEN ,  KUROBE TOSHIHIRO ,  WATANABE YOKO

    IPC: H01L21/027 ,  G03F7/11 ,  G03F7/20

    Abstract: PROBLEM TO BE SOLVED: To provide an antireflection film capable of sufficiently reducing reflectance on an interface between a resist layer and a silicon semiconductor substrate, even if exposure light is made incident obliquely by one layer in a liquid immersion lithography technique, and to provide an exposure method. SOLUTION: The double layer structure antireflection film is used in exposing a resist layer in an exposure system having a wavelength of 190-195 nm and having a numerical aperture of 1.0-1.1, and is formed between the resist layer and a silicon nitride film formed on the surface of the silicon semiconductor substrate. When complex refractive indexes N 1 , N 2 of upper layer and lower layer constituting the antireflection film are expressed by the expressions; N 1 =n 1 -k 1 i, N 2 =n 2 -k 2 i, film thicknesses of the upper layer and lower layer are d 1 , d 2 and a predetermined combination is selected as the combination of values [n 10 , k 10 , d 10 , n 20 , k 20 , d 20 ], n 1 , k 1 , d 1 , n 2 , k 2 , d 2 satisfy the following relation: ä(n 1 -n 10 )/(n 1m -n 10 )} 2 +ä(k 1 -k 10 )/(k 1m -k 10 )} 2 +ä(d 1 -d 10 )/(d 1m -d 10 )} 2 +ä(n 2 -n 20 )/(n 2m -n 20 )} 2 +ä(k 2 -k 20 )/(k 2m -k 20 )} 2 +ä(d 2 -d 20 )/(d 2m -d 20 )} 2 ≤1. COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题：即使在液浸式光刻技术中使曝光光倾斜地入射一层，提供能够充分降低抗蚀剂层和硅半导体衬底之间的界面上的反射率的抗反射膜，以及 提供曝光方法。 解决方案：双层结构抗反射膜用于在波长为190-195nm并且数值孔径为1.0-1.1的曝光系统中曝光抗蚀剂层，并形成在抗蚀剂层和硅之间 形成在硅半导体衬底的表面上的氮化物膜。 当复合折射率N 1 时，构成防反射膜的上层和下层的N 2 由表达式表示; N 1 = n 1 i，N 2 = n 2 -k 2，上层和下层的膜厚度为d SB> 1 ，d 2 ，并且选择预定的组合作为组合 的值[n 10 ，k 10 ，d 10 ，20 SB>，d 20 ，n 1 ，k 1 ，d 1 / SB>，k 2 ，d 2 满足以下关系：ä（n 1 -n 10 ） /（N 1M -n 10 ）} 2 + A（K 1 -k 10 < / SB>）/（K 1M -k 10 ）} 2 + A（D 1 -d < SB> 10 ）/（D 1M -d 10 ）} 2 + A（N 2 -n 20 ）/（N 2米 -n 20 ）} 2 + A（K 2 -k 20 ）/（K 2米 -k 20 ）} 2 + A（ ð 2 -d 20 ）/（D 2米 -d 20 ）} 2 ≤1。 版权所有（C）2007，JPO＆INPIT

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