-
公开(公告)号：JPS5823453B2
公开(公告)日：1983-05-16
申请号：JP2262678
申请日：1978-02-27
Applicant: SONY CORP
Inventor： MAKINO YOSHIMI , OKAMOTO TSUTOMU
-
公开(公告)号：JPS5370398A
公开(公告)日：1978-06-22
申请号：JP14586676
申请日：1976-12-03
Applicant: SONY CORP
Inventor： OKAMOTO TSUTOMU , TAMURA HIDEMASA
IPC: H05B33/22 , C30B19/00 , C30B19/02 , G02F1/00 , G02F1/03 , G02F1/05 , G09F9/30 , H01B3/00 , H01B3/12 , H03H3/00 , H05B33/12
Abstract: PURPOSE:To provide a thin film of smaller photoelectric conductivity and wider area fit for indication by producing a membrane of Bi12 GeO20 in which CaO and Ca2O3 are doped on the single crystal base Bi12GeO20 under the liquid phase epytaxial method.
-
公开(公告)号：JP2517913B2
公开(公告)日：1996-07-24
申请号：JP15562586
申请日：1986-07-02
Applicant: SONY CORP
Inventor： MURAKAMI YOSHIKAZU , OGIHARA TAKAHIRO , OKAMOTO TSUTOMU , NIIKURA KANAKO
-
公开(公告)号：JPH08133884A
公开(公告)日：1996-05-28
申请号：JP27933994
申请日：1994-11-14
Applicant: SONY CORP
Inventor： TAGUCHI KOJIRO , OKAMOTO TSUTOMU
Abstract: PURPOSE: To avoid embedding due to dropping of grown crystal and avoid adverse influence on grown crystal due to occurrence of latent heat due to drastic solidification of melt by giving solidifying cause to the melt and solidifying the melt when grown single crystal is gradually cooled in a state separated from the melt face. CONSTITUTION: β-BaB2 O4 single crystal excellent in crystallinity is obtained in good yield by a pulling-up growing method from the melt having BaB2 O4 composition, especially not using flux. BaCO3 is mixed with B2 O3 in a molar ratio of 1:1 as starting raw materials and the mixture is housed in a platinum crucible 2 and the single crystal is grown using a seed crystal 7. After finishing the growth, the single crystal is pulled up to the position which is about 5mm separate from the liquid level of the melt and cooling of the single crystal is started by rotating the crystal in a state in which grown single crystal 8 is pulled up immediately above the melt 1. At the point of time when melt temperature is lowered to a temperature which is about 100 deg. lower than a temperature at which the growth is finished, a part of the seed crystal 7 is folded and the grown single crystal 8 is dropped, but the melt is already solidified and the single crystal is not embedded therein.
-
公开(公告)号：JPH0597585A
公开(公告)日：1993-04-20
申请号：JP4196392
申请日：1992-01-31
Applicant: SONY CORP
Inventor： HANIYU KAZUTAKA , OKAMOTO TSUTOMU , ASO KOICHI , TATSUKI KOICHI
Abstract: PURPOSE:To produce high-quality KTP single crystal capable of forming a single domain of polarization, having high efficiency of SHG as a nonlinear optical material. CONSTITUTION:First, KTP single crystal 10 is precipitated and grown at >=Curie point of KTP by TSSG method. Then, in a state of the grown KTP single crystal 10 in contact with a melt 1 while maintaining the single crystal >=at the Curie point, a DC voltage 8 is impressed to the KTP single crystal 10 by an electric circuit 7 constituted between seed crystal 3 and the melt 1 and the single crystal is cooled to ) when impressed electric current is Ip and the sizes of crystal along a axis and b axis are (a) and (b) for growing along z axis.
-
Patent Agency Ranking
公开(公告)号：JPS6038783A
公开(公告)日：1985-02-28
申请号：JP14545783
申请日：1983-08-09
Applicant: SONY CORP
Inventor： TAMADA HITOSHI , KANEKO MASAHIKO , OKAMOTO TSUTOMU , YAMADA TOSHIROU
Abstract: PURPOSE:To stabilize recording and movement of recording bits stably by forming a part having a different magnetic energy in a soft magnetic film magnetized easily vertically to the film surface by ion implantation and generating a cylindrical magnetic domain along the boundary part between this part and a part different in magnetic energy. CONSTITUTION:An area 21 having a different magnetic energy is formed in the soft magnetic film magnetized easily vertically to the film surface, to which a bias magnetic field is so applied that magnetization is vertical to the film surface and is directed to one direction, by ion implantation. A magnetic bubble (b) of the cylindrical magnetic domain is formed in the left upper corner or the like of the boundary part between the area 21 and an area, where ions are not implanted, along the boundary part by irradiation or laser light or the like to perform thermal magnetooptic recording. Then, the bubble (b) is recorded stably in this boundary part because force Fc applied to the bubble (b) is a prescribed value. Similarly, the bubble (b) is moved stably along boundaries of the area 21 to move recording bits stably.
-
公开(公告)号：JPS59180805A
公开(公告)日：1984-10-15
申请号：JP5565283
申请日：1983-03-31
Applicant: Sony Corp
Inventor： TAMADA HITOSHI , KANEKO MASAHIKO , OKAMOTO TSUTOMU , YAMADA TOSHIROU
IPC: G11B5/02 , G11B11/10 , G11B11/105
CPC classification number: G11B5/02
Abstract: PURPOSE:To stabilize the writing position by setting the recording position by making use of the force acting on a magnetic bubble which is produced by the change of the magnetic energy at the areas of different levels of film thickness. CONSTITUTION:A thin film of YSmGaFeGe garnet is formed on a garnet substrate 1a by an LPE process to obtain a film 1b containing a soft magnetic film surface magnetized vertically and easily. Then square hollow parts 21 are arrayed with a prescribed pitch on the surface of the oxide film 1b by a photolithography process, and therefore a stage part 22 is formed at the edge part of each hollow part 21. An argon ion laser is used as a recording light source and then stopped down to form a 1.0mum spot on the film 1b, and the recording is performed with 5.0mus pulse width. Then the writing pulse light is irradiated within a 1/4 circle centering on the diagonal line passing through a point A of the part 21 for a circle which is drawn with an about 3.2mum radius from the point A within a distance of the 1.2mum radius of a bubble (b), i.e., from adjacent side walls 22a and 22b of the part 21. Thus it is confirmed that the bubble (b) is stably generated at the point A.
Abstract translation: 目的：通过利用由不同程度的膜厚度的区域上的磁能的变化产生的作用在磁性气泡上的力来设定记录位置来稳定书写位置。 构成：通过LPE工艺在石榴石基材1a上形成YSmGaFeGe石榴石薄膜，得到含有垂直且容易磁化的软磁性膜表面的膜1b。 然后通过光刻工艺在氧化膜1b的表面上以规定的间距排列正方形的中空部21，因此在各中空部21的边缘部形成有台部22。将氩离子激光用作 记录光源，然后停止在薄膜1b上形成1.0μm的斑点，并以5.0mus的脉冲宽度进行记录。 然后将写入脉冲光照射在穿过部分21的点A的对角线上的1/4圈内，该圆弧在距离点1.2的距离内从距离A的距离为1.2μm的范围内绘制大约3.2μm半径的圆 气泡（b）的半径，即来自部分21的相邻侧壁22a和22b。因此证实气泡（b）在点A稳定地产生。
-
公开(公告)号：JPS5858781A
公开(公告)日：1983-04-07
申请号：JP13589882
申请日：1982-08-04
Applicant: SONY CORP
Inventor： MAKINO YOSHIMI , OKAMOTO TSUTOMU , KAMIYA IWAO
IPC: H01L43/08
Abstract: PURPOSE:To prevent the variation of offset voltage due to a humidity change by forming two ferromagnetic films having an anisotropic magnetoresistance effect so as to mutually cross at right angles on a substrate. CONSTITUTION:The magnetoelectric transducer 1 is formed by the folded line- shaped ferromagntic substances A, B, which are formed by evaporating a 80Ni- 20Co alloy to the insulating substrate 7, such as slide glass, a photographic dry plate or the like, to which interface purging treatment is executed, in the thickness of 600-1,000Angstrom and removing unnecessary sections through etching, an output terminal 4 shaped to the approximately intermediate position of the ferromagnetic substances A, B, and current terminals 2, 3 formed at other end sides of the ferromagnetic substances A, B. The ferromagnetic substances A, B consist of rectilinear sections 8, 9 functioning as main current paths and bent sections 10, 11 mutually connecting the rectilinear sections, and the rectilinear sections 8, 9 are mutually crossed at right angles.
-
公开(公告)号：JP2005309161A
公开(公告)日：2005-11-04
申请号：JP2004127182
申请日：2004-04-22
Inventor： OKAMOTO TSUTOMU
IPC: G02F1/37
Abstract: PROBLEM TO BE SOLVED: To provide a method and device which are suitable to mass-production and quality improvement of an optical device. SOLUTION: In VTE (vapor-phase balancing method processing) using a material such as lithium oxide and tantalum oxide, a storage member 4 charged with raw material powder 3 is put in a container 7 and a substrate 1 is arranged in the storage member 4; and then a circumference of the raw material powder 3 and substrate 1 is coated with a coating member 6 and after they are put in the container 7, a high-temperature treatment is carried out in a furnace. During the heat treatment, vapor of the raw material powder 3 can be supplied directly from the storage member 4 and while the circumference of the raw material powder 3 and substrate 1 is covered with the coating member 6, the high-temperature treatment can be carried out, which is effective to vapor leak countermeasures. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract translation: 要解决的问题：提供适合于光学装置的批量生产和质量改进的方法和装置。
解决方案：在使用诸如氧化锂和氧化钽的材料的VTE（气相平衡方法处理）中，将装有原料粉末3的存储构件4放入容器7中，并且将基板1布置在 存储构件4; 然后将原料粉末3和基材1的周边涂覆有涂布部件6，并且在将其放入容器7之后，在炉中进行高温处理。 在热处理期间，原料粉末3的蒸气可以从储存部件4直接供给，在原料粉末3和基板1的周围被涂布部件6覆盖的同时，也可以进行高温处理 出来，这是有效的蒸气泄漏对策。 版权所有（C）2006，JPO＆NCIPI
-
公开(公告)号：JPH09235198A
公开(公告)日：1997-09-09
申请号：JP4338596
申请日：1996-02-29
Applicant: SONY CORP
Inventor： OKAMOTO TSUTOMU , TAGUCHI KOJIRO , FUKUI TATSUO , KUBOTA SHIGEO
Abstract: PROBLEM TO BE SOLVED: To provide a method for producing a beta-barium borate single crystal, enabling the growth of the beta-barium borate single crystal having a high quality and a large caliber in a high yield. SOLUTION: This method for producing a beta-barium board single crystal comprises using beta-barium borate (&Bgr;-BaB2 O4 ) as a seed crystal 10 in a high frequency induction oven and lifting the seed crystal 10 from the melted liquid 2 of barium borate (BaB2 O4 ). Therein, the atmospheric temperatures are selected so that the temperature differences in the vertical direction at the center of a crucible 3 are -165 to -280 deg.C at a higher place by 10mm than the surface of the melted liquid in comparison with the temperature of the surface and also -200 to -360 deg.C at a higher place by 30mm, and the beta-barium borate single crystal 11 is subsequently lifted from the barium borate melted liquid 2.
-
-
-
-
-
-
-
-
-
Search Results
73
records
(took 0.026 seconds)
