公开(公告)号：JPH09106585A

公开(公告)日：1997-04-22

申请号：JP26042195

申请日：1995-10-06

Applicant: SONY CORP

Inventor： FURUKI MOTOHIRO ,  YAMAZAKI TAKESHI ,  TAKEDA MINORU

IPC: B29C59/02 ,  G11B7/26

Abstract: PROBLEM TO BE SOLVED: To effectively prevent a photosetting resin from returning back even when a thick photosetting resin layer having a fine rugged pattern is formed, to effectively prevent the intrusion of air and to obtain excellent optical characteristics by rotating a pressing roller to press the, back surface of a substrate on a stamper with an elastic sheet interposed between the roll and the substrate. SOLUTION: A stamper 8 having a transferred fine rugged pattern for the pattern which constitutes an information recording layer is pressed to a photosetting resin 3 on a substrate l. In this pressing process, a pressing roller 9 is driven to press the back surface of the substrate 1 with an elastic sheet 31 interposed to transfer the fine rugged pattern of the stamper 8 to the photosetting resin 3. Then the photosetting resin 3 is exposed and hardened to form an information recording layer 5 having the fine rugged pattern 2.

公开(公告)号：JPH08255845A

公开(公告)日：1996-10-01

申请号：JP5611095

申请日：1995-03-15

Applicant: SONY CORP

Inventor： TAKEDA MINORU ,  HAYASHI YUTAKA ,  KUBOTA SHIGEO

IPC: H01L21/8247 ,  G11C17/00 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

Abstract: PURPOSE: To enable a ROM device to be manufactured as a product in a short term by method wherein an amorphous silicon resistor possessed of two ends, one end connected to a power supply wire and the other end connected to a drain, is selectively spot-irradiated with an ultraviolet laser beam for writing data in the ROM device. CONSTITUTION: A memory cell N of a semiconductor ROM device is composed of a MOS transistor T and two a-Si transistor SA and SB. The gate and source of the MOS transistor T of the memory cell N are connected to a word line 70 and a bit line 60 respectively. The a-Si transistor SA is connected to a power supply Vd 63, and the other a-Si transistors SB is connected to a grounding wire VSS 64. When data are written in a semiconductor ROM equipped with the above memory cell N, only the a-Si transistors SA is spot-irradiated with an ultraviolet laser beam. On the other hand, the drain of the MOS transistor T is kept at a ground potential by spot-irradiating only the a-Si transistors SB with ultraviolet rays.

公开(公告)号：JPH08255843A

公开(公告)日：1996-10-01

申请号：JP5610995

申请日：1995-03-15

Applicant: SONY CORP

Inventor： TAKEDA MINORU ,  SONEDA MITSUO ,  KUBOTA SHIGEO

IPC: H01L27/112 ,  H01L21/02 ,  H01L21/8246

Abstract: PURPOSE: To lessen a time necessary for writing data in a semiconductor ROM device for delivery as a product by a method wherein the cross points of a cross point cell structure are connected with amorphous silicon, and the wiring is selectively spot-irradiated with an ultraviolet laser beam according to data patterns. CONSTITUTION: A word line L1 and data lines DA1 , DA2 , DA3 , ... are connected together at the cross points of them through a-Si wirings 511 , 512 , 513 , .... When data are written in this semiconductor ROM device of cross point cell structure, the a-Si wirings 511 , 512 , 513 , ... are selectively spot-irradiated with ultraviolet laser rays corresponding to a data pattern. a-Si is turned crystalline or into a poly-Si structure by irradiation with ultraviolet laser rays, so that the a-Si wirings 511 , 512 , 513 , ... are lessened enough in load resistance to become electrically conductive, and data are capable of being written in this semiconductor ROM device.

公开(公告)号：JPH08238583A

公开(公告)日：1996-09-17

申请号：JP4055595

申请日：1995-02-28

Applicant: SONY CORP

Inventor： TAKEDA MINORU

IPC: G02F1/37 ,  B23K26/00 ,  B23K26/064 ,  B23K26/06

Abstract: PURPOSE: To suppress the increase in occupying space, cost and running cost and to reduce a size and cost. CONSTITUTION: A laser diode 11 for excitation emits exciting light. A second harmonic generating unit 12 generates second harmonic light which is a laser beam of a wavelength 532nm by receiving the irradiation with the exciting light. An optical changeover section 15 optically changes over the second harmonic light. A quaternary harmonic generating unit 21 generates quaternary harmonic light which is a laser beam of a wavelength 266nm by using the second harmonic light changed over by the optical changeover section 15.

公开(公告)号：JPH08213299A

公开(公告)日：1996-08-20

申请号：JP1479295

申请日：1995-01-31

Applicant: SONY CORP

Inventor： TAKEDA MINORU ,  KUBOTA SHIGEO

IPC: G02B26/10 ,  G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  H01S3/091 ,  H01S3/101

Abstract: PURPOSE: To improve the accuracy of the spot diameter of focused laser beams, of a downsized and low-price laser by generating fourth harmonic laser beams by using second harmonic laser beams, controlling the intensity of the fourth harmonic laser beams in response to the two-dimension pattern to be plotted and permitting the fourth harmonic laser beams to scan the medium to be exposed. CONSTITUTION: The fourth harmonic waves of laser beams are generated from a fourth harmonic wave generating means 4 by using the second harmonic laser beams from a second harmonic wave generating means 2. The intensity of the harmonic laser beams is controlled by a light intensity control means 7, based on the control signal from a light intensity control signal generating means 8, and laser beams scanned by a scanning means 10 are condensed on a medium 15 to be exposed by using a condensing means 14. Then second harmonic laser beams are conducted onto the medium 15 to be exposed, the position of an alignment mark for forming a two-dimension pattern is detected by a position detecting means 20, and the medium 15 to be exposed is controlled by a shift control means 18 by using a detection signal from the position detecting means 20.

公开(公告)号：JPH08203806A

公开(公告)日：1996-08-09

申请号：JP1022795

申请日：1995-01-25

Applicant: SONY CORP

Inventor： SUGANUMA HIROSHI ,  TAKEDA MINORU

IPC: G02F1/01 ,  G03F7/20 ,  H01L21/027

Abstract: PURPOSE: To correct and improve polarization characteristics of illuminating light for various complex patterns by setting a polarization element which converts light emitted from a light source into circularly polarized light. CONSTITUTION: The fourth harmonic of a laser beam using, as the basic wave, the laser beam form a YAG laser which is employed as a laser medium is generated from a laser source 1. This fourth harmonic is linearly polarized and has a spatial directional dependence. A quarter-wave length plate 2, which is a polarization device, is used to improve and eliminated the spatial directional dependence while maintaining a short wavelength which contributes to resolution. When incident light is linearly polarized, the quarter-wave length plate 2 becomes circular polarization since the optical path difference between abnormal light having an oscillation plane crossing output light at right angles and normal light becomes π/2. In this way, the polarization characteristics of illuminating light are corrected and improved when it is used for a variety of complex patterns.

公开(公告)号：JPH05218372A

公开(公告)日：1993-08-27

申请号：JP1785592

申请日：1992-02-03

Applicant: SONY CORP

Inventor： TAKEDA MINORU

IPC: G02B3/00 ,  H01L27/14 ,  H01L27/148 ,  H04N5/335 ,  H04N5/341 ,  H04N5/355 ,  H04N5/369 ,  H04N5/372

Abstract: PURPOSE:To improve the condensability of a condensing lens, improve the effective numerical aperture, improve the gradation accuracy and promote pixel integration. CONSTITUTION:A light receiving part 2 composed of a p-n photodiode selectively is arranged in matrix on a silicon substrate 1 and a transfer electrode 4 composed of a polycrystalline silicon layer selectively is formed on the silicon substrate 1 through a gate insulating film 3 formed of SiO2, etc. Then, an Al light shielding film 6 is selectively formed on the transfer electrode 4 through an interlayer insulating film 5, a flattening interlayer film 7 is laminated on the whole plane that includes the Al light shielding film 6 and a micro condensing lens 8 is formed by diamond by a CCD solid-state image sensor which has the micro condensing lens 8 formed on the interlayer film 7.

公开(公告)号：JPH03138920A

公开(公告)日：1991-06-13

申请号：JP27673189

申请日：1989-10-24

Applicant: SONY CORP

Inventor： TAKEDA MINORU

IPC: G03F9/00 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To accurately detect an alignment mark for correct mask alignment by forming a hole, as a alignment mark, which passes through layers under a metal wiring layer. CONSTITUTION:A hole 17 for an alignment mark is provided through thin films 2, 10, 3, 11 and 4 under a metal wiring layer 5. The hole 17 includes holes 17a to 17e, and they are etched coaxial holes that have larger diameters in upper layers than in lower layers. Since the hole 17 has a large aspect ratio, a recess 18 is formed in the surface of the metal wiring layer 5. This recess serves to detect the hole 17 for an alignment mark, allowing accurate mask alignment for the metal wiring layer 5.

公开(公告)号：JPH0387030A

公开(公告)日：1991-04-11

申请号：JP22411589

申请日：1989-08-30

Applicant: SONY CORP

Inventor： TAKEDA MINORU

IPC: H01L21/3205 ,  H01L21/768

Abstract: PURPOSE:To enhance the positional precision of a groove and an opening hole by a method wherein the wiring groove and the connecting opening hole connecting to the groove is formed on an insulating film and then the first conductive material is selectively buried in the connecting opening hole while the second conductive material is buried in the wiring groove. CONSTITUTION:An insulating film 2 is deposited on a basic consti tuent element containing an n diffused region 11 of an Si substrate and then a wiring groove 3 and a connecting opening hole 4 connecting to the groove 3 are formed by pattern formation and etching process of resist layers 71, 72. Next, the first conductive material 5 is selectively buried in the opening hole 4 and then the second conductive material 6 is buried in the groove 3 however any needless part is removed since the material 6 is formed on the whole surface due to the lack of selectivity. Through these procedures, the opening hole 4 can be formed with excellent positional precision thereby enabling the effective contact space to be widened as well as the conductive materials to be easily processed.

公开(公告)号：JPH0239152A

公开(公告)日：1990-02-08

申请号：JP18988688

申请日：1988-07-29

Applicant: SONY CORP

Inventor： TAKEDA MINORU

IPC: G03F1/68 ,  G03F1/80 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To prevent the occurence of a part deteriorated in light intensity in a projected pattern between adjacent mask patterns owing to the distorsion of light intensity distribution thereof by providing notch parts in the facing parts of the adjacent mask patterns. CONSTITUTION:The notch parts 31 and 32 are provided in the corners of the rectangular mask patterns 1 and 2. At the time the mask patterns 1 and 2, which has been provided with the notches 31 and 32, are transferred onto the wafer, i.e., their projected surface, the light intensity thereof is distributed as shown by a figure: The pattern distortion of the corners has been properly corrected, and the light intensity is even throughout the groove pattern without the occurence of the deteriorated part. Since the notch parts 31 and 32 exist, the part weakened in the light intensity distribution has been corrected. Thus, the light intensity faithful to the mask pattern can be attained.