SPECTROMETER WITH ACTIVE BEAM STEERING

    公开(公告)号:CA2956394A1

    公开(公告)日:2016-02-25

    申请号:CA2956394

    申请日:2015-07-09

    Abstract: A spectrometer includes a light source that emits a beam into a sample volume comprising an absorbing medium. Thereafter, at least one detector detects at least a portion of the beam emitted by the light source. It is later determined, based on the detected at least a portion of the beam and by a controller, that a position and/or an angle of the beam should be changed. The beam emitted by the light source is then actively steered by an actuation element under control of the controller. In addition, a concentration of the absorbing media can be quantified or otherwise calculated (using the controller or optionally a different processor that can be local or remote). The actuation element(s) can be coupled to one or more of the light source, a detector or detectors, and a reflector or reflectors intermediate the light source and the detector(s).

    ANALYTICAL EQUIPMENT ENCLOSURE INCORPORATION PHASE CHANGING MATERIALS

    公开(公告)号:CA2750180C

    公开(公告)日:2015-12-22

    申请号:CA2750180

    申请日:2009-12-24

    Abstract: Thermally controlled enclosures that can be used with gas analyzers are described. The enclosures incorporate one or more phase changing materials that buffer ambient and internal heat loads to reduce the power consumption demand of mechanical or electronic heating apparatus. Maintenance of gas analyzer equipment at a consistent temperature can be important to achieving stable and reproducible results. Related systems, apparatus, methods, and/or articles are also described.

    SEMICONDUCTOR LASER MOUNTING FOR IMPROVED FREQUENCY STABILITY

    公开(公告)号:AU2015202533A1

    公开(公告)日:2015-05-28

    申请号:AU2015202533

    申请日:2015-05-11

    Abstract: A first contact surface of a semiconductor laser chip can be formed to a target surface roughness selected to have a maximum peak to valley height that is substantially smaller than a barrier layer thickness of a metallic barrier layer to be applied to the first contact surface. A metallic barrier layer having the barrier layer thickness can be applied to the first contact surface, and the semiconductor laser chip can be soldered to a carrier mounting along the first contact surface using a solder composition by heating the soldering composition to less than a threshold temperature at which dissolution of the metallic barrier layer into the soldering composition occurs. Related systems, methods, articles of manufacture, and the like are also described.

    Semiconductor laser mounting with intact diffusion barrier layer

    公开(公告)号:AU2012296657B2

    公开(公告)日:2015-05-21

    申请号:AU2012296657

    申请日:2012-08-14

    Abstract: A first contact (310) surface of a semiconductor laser chip (302) is formed to a surface roughness selected to have a maximum peak to valley height that is substantially smaller than a diffusion barrier layer thickness. A diffusion barrier layer that includes a non-metallic, electrically-conducting compound and that has the barrier layer thickness is applied to the first contact surface, and the semiconductor laser chip is soldered to a carrier mounting (304) along the first contact surface using a solder composition (306) by heating the soldering composition to less than a threshold temperature at which dissolution of the barrier layer into the soldering composition occurs. Thereby the diffusion barrier remains contiguous. The non-metallic, electrically conducting compound may comprise at least one of titanium nitride, titanium oxy-nitride, tungsten nitride, cerium oxide and cerium gadolinium oxy-nitride

    BACKGROUND COMPENSATION BY MULTIPLE-PEAK MEASUREMENTS FOR ABSORPTION SPECTROSCOPY-BASED GAS SENSING

    公开(公告)号:CA2677092C

    公开(公告)日:2015-05-12

    申请号:CA2677092

    申请日:2008-01-24

    Abstract: Concentrations of a target analyte in a gas mixture containing one or more background analytes having potentially interfering spectral absorption features can be calculated by compensating for background analyte absorption at a target wavelength used to quantify the target analyte. Absorption can be measured at a reference wavelength (302) chosen to quantify the concentration of the background analyte. Using a background gas adjustment factor or function, the absorption measured at the reference wavelength can be used to calculate absorption due to the background analyte at the target wavelength (304) and thereby compensate for this background absorption to more accurately calculate the target analyte concentration in real or near real time (306). Additional background analytes can optionally be compensated for by using one or more additional reference wavelengths.

    SCRUBBER FOR REACTIVE GASES
    37.
    发明专利

    公开(公告)号:CA2698114C

    公开(公告)日:2014-03-11

    申请号:CA2698114

    申请日:2008-08-29

    Abstract: Scrubber media for reactive gases, that can include but are not necessarily limited to hydrogen chloride (HCl), hydrogen sulfide (H2S), hydrogen fluoride (HF), and ammonia (NH3), can include reactive particles, potentially as small as nano-scale, that can optionally be suspended on macro-scale carrier particles. Reactive gases can be converted to non-volatile compounds by being passed through a bed of such scrubber media. Such scrubber media can be used to remove reactive gases from gas mixtures. Potential applications include differential absorption spectroscopy, air pollutant emission controls, and the like. Methods of preparing scrubber media are also described.

    Semiconductor laser mounting for improved frequency stability

    公开(公告)号:AU2012229907A1

    公开(公告)日:2013-10-03

    申请号:AU2012229907

    申请日:2012-03-14

    Abstract: A first contact surface ( 310 ) of a semiconductor laser chip ( 302 ) can be formed to a target surface roughness selected to have a maximum peak to valley height that is substantially smaller than a barrier layer thickness of a metallic barrier layer to be applied to the first contact surface ( 310 ). A metallic barrier layer having the barrier layer thickness can be applied to the first contact surface, and the semiconductor laser chip ( 302 ) can be soldered to a carrier mounting along the first contact surface ( 310 ) using a solder composition ( 306 ) by heating the soldering composition to less than a threshold temperature at which dissolution of the metallic barrier layer into the soldering composition occurs. Related systems, methods, articles of manufacture, and the like are also described.

    BACKGROUND COMPENSATION BY MULTIPLE-PEAK MEASUREMENTS FOR ABSORPTION SPECTROSCOPY-BASED GAS SENSING

    公开(公告)号:CA2677092A1

    公开(公告)日:2008-10-30

    申请号:CA2677092

    申请日:2008-01-24

    Abstract: Concentrations of a target analyte in a gas mixture containing one or mor e background analytes having potentially interfering spectral absorption fea tures can be calculated by compensating for background analyte absorption at a target wavelength used to quantify the target analyte. Absorption can be measured at a reference wavelength (302) chosen to quantify the concentratio n of the background analyte. Using a background gas adjustment factor or fun ction, the absorption measured at the reference wavelength can be used to ca lculate absorption due to the background analyte at the target wavelength (3 04) and thereby compensate for this background absorption to more accurately calculate the target analyte concentration in real or near real time (306). Additional background analytes can optionally be compensated for by using o ne or more additional reference wavelengths.

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