公开(公告)号：FR2819632B1

公开(公告)日：2003-09-26

申请号：FR0100419

申请日：2001-01-12

Applicant: ST MICROELECTRONICS SA

Inventor： MENUT OLIVIER ,  GRIS YVON

IPC: H01L21/8242 ,  H01L27/108

Abstract: An integrated circuit has at least one semiconductor device for storing charge that includes at least one elementary active component and at least one elementary storage capacitor. The device includes a substrate having a lower region containing at least one buried capacitive elementary trench forming the elementary storage capacitor, and an elementary well located above the lower region of the substrate and isolated laterally by a lateral electrical isolation region. The elementary active component is located in the elementary well or in and on the elementary well. The capacitive elementary trench is located under the elementary active component and is in electrical contact with the elementary well. In one preferred embodiment, the lateral electrical isolation region is formed by a trench filled with a dielectric material and has a greater depth than that of the elementary well. Also provided is a method for fabricating an integrated circuit that includes a semiconductor device for storing charge.

公开(公告)号：FR2826178A1

公开(公告)日：2002-12-20

申请号：FR0107717

申请日：2001-06-13

Applicant: ST MICROELECTRONICS SA

Inventor： MENUT OLIVIER ,  JAOUEN HERVE

IPC: H01L21/331 ,  H01L21/477 ,  H01L27/04

Abstract: Fabrication of an integrated circuit incorporating a monocrystalline silicon substrate (2), at least one layer of polycrystalline silicon laid on the upper surface (2a) of the substrate and provided with at least two doping species of different diffusion speeds, consists of annealing at a temperature and duration such that a first doping species diffuses into a first zone and a second doping species diffuses into a second zone more extended than the first zone. An Independent claim is also included for an integrated circuit obtained by this method of fabrication.