-
公开(公告)号：DE69522734T2
公开(公告)日：2002-08-08
申请号：DE69522734
申请日：1995-04-11
Applicant: ST MICROELECTRONICS SA
Inventor： PEZZANI ROBERT
IPC: H01L21/66 , G01R31/26 , H01L21/822 , H01L27/02 , H01L27/04 , H01L29/74 , H01L29/861 , H01L29/87
Abstract: The device has a N-type substrate layer (S) of low doping level which contains the protective components. A supplementary P-type (P3) region is connected to a test terminal (11) which is connected by a current detector to sources of voltage. The voltage sources may be greater or less than the basic N or P type material voltages. The protective component may be a bi-directional Shockley diode, with P-type (P1,P2) regions and with complementary projecting N-type regions (N1,N2). These may be formed in the outer substrate opposite conductivity (P type) faces.
-
公开(公告)号：FR2819953A1
公开(公告)日：2002-07-26
申请号：FR0100935
申请日：2001-01-24
Applicant: ST MICROELECTRONICS SA
Inventor： PEZZANI ROBERT
Abstract: The invention relates to a vertical-type power switch disposed in a semi-conductor chip, comprising a winding (30) located on the periphery of at least one face of said chip. Said winding comprises two binding posts (31, 32) which supply a signal that is proportional to the current fluctuations in said switch.
-
Patent Agency Ranking
公开(公告)号：FR2803143B1
公开(公告)日：2002-04-12
申请号：FR9916602
申请日：1999-12-28
Applicant: ST MICROELECTRONICS SA
Inventor： BERNIER ERIC , PEZZANI ROBERT
IPC: H01L29/73 , H01L21/331 , H01L29/861 , H01L29/866 , H03G11/02 , H03K17/70 , H01L29/86
Abstract: A clipping device intended for absorbing current peaks from 1 to 10 amperes, formed of a vertical NPN transistor, having an unconnected base, an emitter connected to a terminal on which positive voltage peaks are likely to appear, and a grounded collector, the transistor parameters being set so that it exhibits a negative dynamic resistance.
-
公开(公告)号：DE69522734D1
公开(公告)日：2001-10-25
申请号：DE69522734
申请日：1995-04-11
Applicant: ST MICROELECTRONICS SA
Inventor： PEZZANI ROBERT
IPC: H01L21/66 , G01R31/26 , H01L21/822 , H01L27/02 , H01L27/04 , H01L29/74 , H01L29/861 , H01L29/87
Abstract: The device has a N-type substrate layer (S) of low doping level which contains the protective components. A supplementary P-type (P3) region is connected to a test terminal (11) which is connected by a current detector to sources of voltage. The voltage sources may be greater or less than the basic N or P type material voltages. The protective component may be a bi-directional Shockley diode, with P-type (P1,P2) regions and with complementary projecting N-type regions (N1,N2). These may be formed in the outer substrate opposite conductivity (P type) faces.
-
公开(公告)号：FR2781899B1
公开(公告)日：2000-10-06
申请号：FR9809947
申请日：1998-07-30
Applicant: ST MICROELECTRONICS SA
Inventor： PEZZANI ROBERT
-
公开(公告)号：FR2783981A1
公开(公告)日：2000-03-31
申请号：FR9812395
申请日：1998-09-29
Applicant: ST MICROELECTRONICS SA
Inventor： RIVET BERTRAND , PEZZANI ROBERT
Abstract: The invention concerns a circuit for controlling a load (1) to be supplied in alternating current voltage, comprising a two-way switch (2) capable of being controlled by phase angle, in series with the load between two terminals (E1, E2) applying the alternating current supply, and comprising, in parallel with the switch, a first resistive element (R), a first capacitor (C1), and an element, in series with said first resistive element and said first capacitor, and functioning, in steady state conditions, as a constant voltage source (12), the midpoint (A) of the association in series of the first resistive element and the first capacitor being connected, via an element (4) with two-way conduction automatically triggered when the voltage at its terminals exceeds a predetermined threshold, to a terminal (g) controlling the switch.
-
公开(公告)号：FR2781899A1
公开(公告)日：2000-02-04
申请号：FR9809947
申请日：1998-07-30
Applicant: ST MICROELECTRONICS SA
Inventor： PEZZANI ROBERT
-
-
-
-
-
-
Search Results
37
records
(took 0.022 seconds)
