公开(公告)号：JP2001223223A

公开(公告)日：2001-08-17

申请号：JP2000394758

申请日：2000-12-26

Applicant: ST MICROELECTRONICS SA

Inventor： BERNIER ERIC ,  PEZZANI ROBERT

IPC: H01L29/73 ,  H01L21/331 ,  H01L29/861 ,  H01L29/866 ,  H03G11/02

Abstract: PROBLEM TO BE SOLVED: To provide a clipping device for adsorbing current peaks from one to 10 amperes. SOLUTION: A base of a vertical N-P-N transistor is provided in a non- contact state, an emitter of the transistor is connected with a terminal to generate positive voltage peaks and a collector of the transistor is grounded. The parameters of the transistor are set so that a negative dynamic resistance is obtained.

公开(公告)号：WO0250850A3

公开(公告)日：2003-01-03

申请号：PCT/FR0104136

申请日：2001-12-20

Applicant: ST MICROELECTRONICS SA ,  GUITTON FABRICE ,  PEZZANI ROBERT

Inventor： GUITTON FABRICE ,  PEZZANI ROBERT

IPC: H01F27/28 ,  H01F27/40 ,  H03K17/723 ,  H04B3/56

CPC classification number: H01F27/2804 ,  H01F2029/143 ,  H01L2924/19011 ,  Y10T307/937 ,  Y10T307/944

Abstract: The invention concerns a control circuit for controlling a power switch by means of a galvanic insulation transformer, the transformer being produced in the form of planar conductive windings on an insulating substrate (20) whereon are integrated passive components constituting a high frequency excitation oscillating circuit for a primary winding of the transformer, the transformer substrate being directly mounted on a wafer (24) whereon is mounted a circuit chip (40) integrating the power switch.

Abstract translation: 本发明涉及一种用于通过电绝缘变压器控制功率开关的控制电路，该变压器以绝缘衬底（20）上的平面导电绕组的形式制造，其中是构成高频激励振荡电路的集成无源部件， 变压器的初级绕组，变压器基板直接安装在其上安装有集成电源开关的电路芯片（40）的晶片（24）上。

公开(公告)号：DE69721865T2

公开(公告)日：2004-04-01

申请号：DE69721865

申请日：1997-02-25

Applicant: ST MICROELECTRONICS SA

Inventor： PEZZANI ROBERT

IPC: H03K17/725 ,  H01L29/747

Abstract: The three state switch has two thyristors (TR1,TR2) which are placed in parallel across the mains circuit (A1,A2) with a series load. The two thyristors are placed in opposite current flow directions. There is a voltage operated switch (20) which applies positive or negative voltages to the anode of one thyristor and the cathode of the second thyristor. The switch has a third open circuit position. Switching the thyristors allows positive or negative current flow or zero flow through the mains circuit.

公开(公告)号：DE69522920T2

公开(公告)日：2002-06-13

申请号：DE69522920

申请日：1995-12-27

Applicant: ST MICROELECTRONICS SA

Inventor： PEZZANI ROBERT

IPC: H01L29/73 ,  H01L21/331 ,  H01L21/761 ,  H01L21/822 ,  H01L21/8222 ,  H01L23/40 ,  H01L27/04 ,  H01L27/06 ,  H01L27/08 ,  H01L29/732 ,  H01L29/739 ,  H01L29/74 ,  H01L29/78 ,  H01L29/861 ,  H05K7/20

Abstract: Conventional vertical components can be formed directly in the n-substrate having rear face covered with metallisation (M) corresp. to a common electrode. One type of isolated component has an active layer of opposite conductivity type on the rear face and is isolated by relatively heavily doped walls (6) which are overlapped by the dielectric layer (7) between the active layer and the metallisation.

公开(公告)号：DE69611858T2

公开(公告)日：2001-06-13

申请号：DE69611858

申请日：1996-05-15

Applicant: ST MICROELECTRONICS SA

Inventor： PEZZANI ROBERT

IPC: H05B41/18 ,  H01L21/822 ,  H01L27/04 ,  H01L29/74 ,  H01L29/747 ,  H01L29/866 ,  H03K17/725 ,  H05B41/04

Abstract: The circuit includes a first thyristor (Th1) which has a trigger connected to the thyristor cathode via a first resistance (RG) and connected to the anode via a low voltage Zener diode (Z) connected in series. The first thyristor is formed vertically with a second thyristor (Th2). The Zener diode is of lateral type and the diode cathode is coupled to the cathode of the second thyristor by metallisation forming the output terminal (2). The Zener diode is manufactured in the trigger section of the first thyristor.

公开(公告)号：DE69327388T2

公开(公告)日：2000-05-25

申请号：DE69327388

申请日：1993-10-25

Applicant: ST MICROELECTRONICS SA

Inventor： PEZZANI ROBERT

IPC: H01L27/102 ,  H01L29/10 ,  H01L29/423 ,  H01L29/74 ,  H01L29/41

Abstract: The present invention relates to a thyristor comprising a vertical thyristor including, on its front face, a localised anode region (P2) and, on the rear face, a cathode metallisation (K) covering substantially all of this rear face and, on the side of the front face, a lateral thyristor (tl). The trigger of the thyristor corresponds to the cathode (c) or cathode trigger (g) region of the lateral thyristor. The cathode trigger (g) or cathode (c) region respectively, of the lateral thyristor, is linked to the cathode of the vertical thyristor.

公开(公告)号：FR2819953B1

公开(公告)日：2003-06-13

申请号：FR0100935

申请日：2001-01-24

Applicant: ST MICROELECTRONICS SA

Inventor： PEZZANI ROBERT

IPC: H01L27/06 ,  H03K17/16

Abstract: The invention relates to a vertical-type power switch disposed in a semi-conductor chip, comprising a winding ( 30 ) located on the periphery of at least one face of said chip. Said winding comprises two binding posts ( 31, 32 ) which supply a signal that is proportional to the current fluctuations in said switch.

公开(公告)号：FR2803143A1

公开(公告)日：2001-06-29

申请号：FR9916602

申请日：1999-12-28

Applicant: ST MICROELECTRONICS SA

Inventor： BERNIER ERIC ,  PEZZANI ROBERT

IPC: H01L29/73 ,  H01L21/331 ,  H01L29/861 ,  H01L29/866 ,  H03G11/02 ,  H03K17/70 ,  H01L29/86

Abstract: The base of vertical NPN transistor is left unconnected while the emitter terminal is connected to a point where positive high voltage pulses appear, and the collector terminal is grounded. The transistor parameters are set so that current-voltage characteristic of the transistor exhibits negative dynamic resistance. Base and emitter of transistor extend beyond each other so that breakdown occurs in volume.

公开(公告)号：DE69611572T2

公开(公告)日：2001-05-31

申请号：DE69611572

申请日：1996-05-15

Applicant: ST MICROELECTRONICS SA

Inventor： PEZZANI ROBERT

IPC: H05B41/18 ,  H01L21/822 ,  H01L27/04 ,  H01L29/74 ,  H01L29/747 ,  H01L29/866 ,  H03K17/725 ,  H05B41/04

Abstract: The circuit includes a first thyristor (Th1) which has a trigger connected to the thyristor cathode via a first resistance (RG) and connected to the anode via a low voltage Zener diode (Z) connected in series. The first thyristor is formed vertically with a second thyristor (Th2). The Zener diode is of lateral type and the diode cathode is coupled to the cathode of the second thyristor by metallisation forming the output terminal (2). The Zener diode is manufactured in the trigger section of the first thyristor.

公开(公告)号：DE69611572D1

公开(公告)日：2001-02-22

申请号：DE69611572

申请日：1996-05-15

Applicant: ST MICROELECTRONICS SA

Inventor： PEZZANI ROBERT

IPC: H05B41/18 ,  H01L21/822 ,  H01L27/04 ,  H01L29/74 ,  H01L29/747 ,  H01L29/866 ,  H03K17/725 ,  H05B41/04

Abstract: The circuit includes a first thyristor (Th1) which has a trigger connected to the thyristor cathode via a first resistance (RG) and connected to the anode via a low voltage Zener diode (Z) connected in series. The first thyristor is formed vertically with a second thyristor (Th2). The Zener diode is of lateral type and the diode cathode is coupled to the cathode of the second thyristor by metallisation forming the output terminal (2). The Zener diode is manufactured in the trigger section of the first thyristor.