公开(公告)号：EP1420415A2

公开(公告)日：2004-05-19

申请号：EP03104130.4

申请日：2003-11-10

Applicant: STMicroelectronics S.r.l.

Inventor： Micheloni, Rino ,  Ravasio, Roberto

IPC: G11C16/10

CPC classification number: G11C16/10 ,  G11C16/30

Abstract: A circuit (115,145,150) for programming a non-volatile memory device (100) having a plurality of memory cells (105) is proposed. The circuit includes a plurality of driving elements (115) each one for applying a program pulse to a selected memory cell to be programmed, the driving elements being suitable to be supplied by a power supply unit (120,125), and control means (145,150) for controlling the driving elements; the control means includes means (150,205) for determining a residual capacity of the power supply unit, and selecting means (145) for selectively enabling the driving elements according to the residual capacity.

Abstract translation: 提出了一种用于对具有多个存储单元（105）的非易失性存储器件（100）进行编程的电路（115,145,150）。 电路包括多个驱动元件（115），每个驱动元件（115）用于将编程脉冲施加到要被编程的所选择的存储器单元，所述驱动元件适于由电源单元（120,125）提供;以及控制装置（145,150） 用于控制驱动元件; 所述控制装置包括用于确定所述电源单元的剩余容量的装置（150,205），以及用于根据所述剩余容量选择性地启用所述驱动元件的选择装置（145）。