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公开(公告)号：DE69114638T2
公开(公告)日：1996-07-25
申请号：DE69114638
申请日：1991-08-09
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor： IMAI TAKAHIRO , FUJIMORI NAOJI
Abstract: An X-ray window having a diamond X-ray transparent film, diamond reinforcing crosspieces and a substrate on which the diamond X-ray transparent film has been grown. As reinforcing crosspieces are made of diamond, no thermal stress is generated between the X-ray transparent film and the crosspieces. This mask excels in flatness, transmittance of X-rays, and strength.
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公开(公告)号：DE69114638D1
公开(公告)日：1995-12-21
申请号：DE69114638
申请日：1991-08-09
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor： IMAI TAKAHIRO , FUJIMORI NAOJI
Abstract: An X-ray window having a diamond X-ray transparent film, diamond reinforcing crosspieces and a substrate on which the diamond X-ray transparent film has been grown. As reinforcing crosspieces are made of diamond, no thermal stress is generated between the X-ray transparent film and the crosspieces. This mask excels in flatness, transmittance of X-rays, and strength.
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公开(公告)号：DE3889015D1
公开(公告)日：1994-05-19
申请号：DE3889015
申请日：1988-06-22
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor： IMAI TAKAHIRO , HARADA KEIZO , YAZU SHUJI , JODAI TETSUJI
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公开(公告)号：DE3818719A1
公开(公告)日：1989-01-05
申请号：DE3818719
申请日：1988-06-01
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor： IMAI TAKAHIRO , NAKAHATA HIDEAKI , FUJIMORI NAOJI
IPC: C30B25/10 , H01L29/16 , H01L29/167 , H01L21/18 , H01L21/205
Abstract: A semiconducting diamond which contains diamond carbon and at least one dopant element selected from the group consisting of S, Se, and Cl, and a process for producing the same.
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公开(公告)号：CA2720866A1
公开(公告)日：2009-10-15
申请号：CA2720866
申请日：2009-04-02
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor： MAJIMA MASATOSHI , INAZAWA SHINJI , NITTA KOJI , YAMAKAWA MASAHIRO , SUGIHARA TAKAYASU , TAKEDA YASUHIRO , AKAHANE YOSHIHIRO , IMAI TAKAHIRO
Abstract: Disclosed is a gas decomposition apparatus for decomposing many kinds of foul-smelling gas, which is free from safety problems while applying a relatively high voltage between anode and cathode. A method for decomposing gas is also disclosed. The gas decomposition apparatus is characterized by comprising a porous catalyst electrode (6) containing a catalyst, a counter electrode (7) forming a pair with the catalyst electrode, and an ion-conductive electrolyte (15) sandwiched between the catalyst electrode and the counter electrode. The gas decomposition apparatus is also characterized in that the catalyst is supported by a carrier which is composed of a conductive material and held by the catalyst electrode, or directly supported by the catalyst electrode, and the conductive material in contact with the catalyst in the catalyst electrode is not a non-covalent bond carbon material.
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Patent Agency Ranking
公开(公告)号：MY138872A
公开(公告)日：2009-08-28
申请号：MYPI20040218
申请日：2004-01-27
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor： KAZAHAYA KATSUO , KAWAI SHIGETAKA , MATSUMOTO YASUSHI , ISHIBASHI KEIJI , IMAI TAKAHIRO
Abstract: THE INVENTION PROVIDES A DIAMOND COATED TOOL HAVING AN EXCELLENT CUTTING PERFORMANCES, WEAR RESISTANCE, ADHESION RESISTANCE AND WORK SURFACE ROUGHNESS IN COMBINATION AND A METHOD OF PRODUCING SUCH A TOOL.A DIAMOND COATED TOOL COMPRISING A SUBSTRATE AND A DIAMOND COATING FORMED ON THE SURFACE OF THE SUBSTRATE, WHEREIN SAID SUBSTRATE IS MADE OF A CEMENTED CARBIDE OR A CERMET, DIAMOND GRAINS CONSTITUTING A GROWTH SURFACE OF SAID DIAMOND COATING HAS AN AVERAGE GRAIN SIZE OF ABOUT 1.5 MICROMETERS OR BELOW, SAID DIAMOND COATING HAS A THICKNESS RANGING FROM ABOUT 0.1 MICROMETER TO 20 MICROMETERS, AND SAID DIAMOND COATING HAS AN AVERAGE SURFACE ROUGHNESS RA RANGING FROM ABOUT 0.01 MICROMETER TO 0.2 MICROMETER. SUCH A DIAMOND COATED TOOL CAN BE OBTAINED BY CARBURIZING THE SUBSTRATE CONSISTING OF A CEMENTED CARBIDE OR A CERMET, AND GROOWING UP A DIAMOND COATING THEREON.
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公开(公告)号：CA2348397C
公开(公告)日：2008-09-02
申请号：CA2348397
申请日：2001-06-05
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor： MATSUURA TAKASHI , MEGURO KIICHI , IMAI TAKAHIRO
IPC: C23C16/27 , C30B29/04 , C23C16/511 , C23C16/52 , C30B25/02
Abstract: A method and an apparatus for forming a diamond film from microwave plasma by controlling a manufacturing condition based on spectroscopic measurement of plasma emission to obtain a large area of a high-quality diamond film. In the method of forming a diamond film, a gas mixture of hydrocarbon gas and hydrogen gas is introduced into a reactor, where the gas mixture is excited by microwave which is also introduced into the reactor to generate plasma, and the light emitted from the plasma is spectroscopically measured. Furthermore, a formation condition of the diamond film is controlled such that the spectrum of a carbon molecule (C2) falls within a predetermined range of requirement.
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公开(公告)号：DE60123169T2
公开(公告)日：2007-09-13
申请号：DE60123169
申请日：2001-06-07
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor： MEGURO KIICHI , MATSUURA TAKASHI , IMAI TAKAHIRO
IPC: C23C16/27 , C30B29/04 , C23C16/511 , C23C16/52 , C30B25/02
Abstract: A method and an apparatus for forming a large area of a high-quality diamond film from a microwave plasma by controlling the processing conditions based on the spectroscopic measurement of the plasma emission. In the method of forming a diamond film, a gas mixture of a hydrocarbon gas and hydrogen gas is introduced into a reactor (7), and the gas mixture is excited by microwaves, which are also introduced into the reactor (7), to generate plasma. The light emitted from the plasma is then measured by spectroscopic means. Furthermore, a formation condition of the diamond film is controlled such that the spectrum of a carbon molecule (C2) falls within a predetermined range.
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公开(公告)号：AU2003289502A1
公开(公告)日：2005-05-11
申请号：AU2003289502
申请日：2003-12-22
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor： NAMBA AKIHIKO , YAMAMOTO YOSHIYUKI , SUMIYA HITOSHI , NISHIBAYASHI YOSHIKI , IMAI TAKAHIRO
IPC: C30B29/04 , H01L21/04 , H01L21/265 , H01L21/425 , H01L21/477 , H01L29/167
Abstract: A method of manufacturing n -type semiconductor diamond by the present invention is characterized in producing diamond incorporating Li and N by implanting Li ions into, so that 10 ppm thereof will be contained in, single-crystal diamond incorporating 10 ppm or more N , or else, in doping single-crystal diamond with Li and N ions, by implanting the ions so that ion-implantation depths at which the post-implantation Li and N concentrations each are 10 ppm or more will overlap, and thereafter annealing the diamond in a temperature range of from 800°C or more to less than 1800°C to electrically activate the Li and N and restore the diamond crystalline structure. In the present invention, n -type semiconductor diamond incorporates, from the surface of the crystal to the same depth, 10 ppm or more of each of Li and N, wherein its sheet resistance is 10 7 ©/¡ or less.
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公开(公告)号：AU2003242456A1
公开(公告)日：2003-12-31
申请号：AU2003242456
申请日：2003-06-18
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor： NAMBA AKIHIKO , IMAI TAKAHIRO , NISHIBAYASHI YOSHIKI
Abstract: An n-type diamond epitaxial layer 20 is formed by processing a single-crystalline ä100ü diamond substrate 10 so as to form a ä111ü plane, and subsequently by causing diamond to epitaxially grow while n-doping the diamond ä111ü plane. Further, a combination of the n-type semiconductor diamond, p-type semiconductor diamond, and non-doped diamond, obtained in the above-described way, as well as the use of p-type single-crystalline ä100ü diamond substrate allow for a pn junction type, a pnp junction type, an npn junction type and a pin junction type semiconductor diamond to be obtained.
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