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    GROUP III NITRIDE COMPOSITE SUBSTRATE
    1.
    发明申请
    GROUP III NITRIDE COMPOSITE SUBSTRATE 审中-公开
    第III组氮化物复合基板

    公开(公告)号：WO2012063774A9

    公开(公告)日：2013-01-10

    申请号：PCT/JP2011075591

    申请日：2011-11-07

    Applicant: SUMITOMO ELECTRIC INDUSTRIES ,  SATOH ISSEI ,  YOSHIDA HIROAKI ,  YAMAMOTO YOSHIYUKI ,  HACHIGO AKIHIRO ,  MATSUBARA HIDEKI

    Inventor： SATOH ISSEI ,  YOSHIDA HIROAKI ,  YAMAMOTO YOSHIYUKI ,  HACHIGO AKIHIRO ,  MATSUBARA HIDEKI

    IPC: H01L21/02 ,  H01L27/12

    CPC classification number: H01L21/76254 ,  H01L21/0242 ,  H01L21/02488 ,  H01L21/0254

    Abstract: This group III nitride composite substrate (1) contains a supporting substrate (10), an oxide film (20) formed on the supporting substrate (10), and a group III nitride layer (30a) formed on the oxide film (20). Here, the oxide film (20) can be any film selected from the group consisting of a TiO2 film and an SrTiO3 film, and can be added with impurities. As a result, a group III nitride composite substrate wherein the bond strength between the supporting substrate and the group III nitride layer is high is provided.

    Abstract translation: 该III族氮化物复合衬底（1）包含支撑衬底（10），形成在支撑衬底（10）上的氧化物膜（20）和形成在氧化膜（20）上的III族氮化物层（30a）。 这里，氧化膜（20）可以是从由TiO 2膜和SrTiO 3膜构成的组中选择的任何膜，并且可以添加杂质。 结果，提供了支撑衬底和III族氮化物层之间的结合强度高的III族氮化物复合衬底。

    METHOD FOR PRODUCING GaN FILM
    2.
    发明申请
    METHOD FOR PRODUCING GaN FILM 审中-公开
    生产GaN薄膜的方法

    公开(公告)号：WO2012067015A9

    公开(公告)日：2012-11-08

    申请号：PCT/JP2011075961

    申请日：2011-11-10

    Applicant: SUMITOMO ELECTRIC INDUSTRIES ,  SATOH ISSEI ,  SEKI YUKI ,  UEMATSU KOJI ,  YAMAMOTO YOSHIYUKI ,  MATSUBARA HIDEKI ,  FUJIWARA SHINSUKE ,  YOSHIMURA MASASHI

    Inventor： SATOH ISSEI ,  SEKI YUKI ,  UEMATSU KOJI ,  YAMAMOTO YOSHIYUKI ,  MATSUBARA HIDEKI ,  FUJIWARA SHINSUKE ,  YOSHIMURA MASASHI

    IPC: H01L21/02 ,  H01L21/20 ,  H01L21/205

    CPC classification number: H01L33/007 ,  H01L21/76256 ,  H01L33/0079

    Abstract: This method for producing a GaN film includes: a step for preparing a composite substrate containing a support substrate (11) having a coefficient of thermal expansion in the main surface (11m) greater than 0.8 times and less than 1.2 times the coefficient of thermal expansion of GaN crystals in the a-axis direction, and a single-crystal film (13) positioned on the main surface (11m) side of the support film (11), said single-crystal film (13) having a three-fold symmetry with respect to the axis perpendicular to the main surface (13m) of the single-crystal film (13); and a step for forming a GaN film (20) on the main surface (13m) of the single-crystal film (13) in the composite substrate (10). A method for producing a GaN film, whereby a GaN film having large main surface area and small warp can be produced, is thus provided.

    Abstract translation: 该制造GaN膜的方法包括：制备含有主表面（11m）中的热膨胀系数大于0.8倍且小于热膨胀系数的1.2倍的支撑基板（11）的复合基板的工序 的GaN晶体和位于支撑膜（11）的主表面（11m）侧的单晶膜（13），所述单晶膜（13）具有三重对称性 相对于垂直于单晶膜（13）的主表面（13m）的轴线; 以及在复合衬底（10）中在单晶膜（13）的主表面（13m）上形成GaN膜（20）的步骤。 因此，可以制造GaN膜的制造方法，由此可以制造主表面积大，翘曲小的GaN膜。

    COMPOSITE SUBSTRATE WITH PROTECTION FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    3.
    发明申请
    COMPOSITE SUBSTRATE WITH PROTECTION FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
    具有保护膜的复合基板及制造半导体器件的方法

    公开(公告)号：WO2012111616A1

    公开(公告)日：2012-08-23

    申请号：PCT/JP2012053279

    申请日：2012-02-13

    Applicant: SUMITOMO ELECTRIC INDUSTRIES ,  SATOH ISSEI ,  YOSHIDA HIROAKI ,  YAMAMOTO YOSHIYUKI ,  HACHIGO AKIHIRO ,  MATSUBARA HIDEKI

    Inventor： SATOH ISSEI ,  YOSHIDA HIROAKI ,  YAMAMOTO YOSHIYUKI ,  HACHIGO AKIHIRO ,  MATSUBARA HIDEKI

    IPC: H01L21/20

    CPC classification number: H01L29/2003 ,  H01L21/02104 ,  H01L21/76254

    Abstract: This composite substrate (2Q) with a protection film comprises: a support substrate (10); an oxide film (20) arranged on the support substrate (10); a semiconductor layer (30a) arranged on the oxide film (20); and a protection film (40) that protects the oxide film (20) by covering sections (20s, 20t) of the oxide film (20) that are not covered by either the support substrate (10) or the semiconductor layer (30a). The method of manufacturing a semiconductor device comprises: a process for preparing a composite substrate (2Q) with a protection film; and a process for epitaxially growing at least one functional semiconductor layer on the semiconductor layer (30a) of the composite substrate (2Q) with a protection film, said functional semiconductor layer producing a semiconductor device function. Thus, a composite substrate with a protection film and method of manufacturing a semiconductor device using the composite substrate with a protection film are provided, said composite substrate having a large effective area where a high-quality functional semiconductor layer can be epitaxially grown.

    Abstract translation: 具有保护膜的复合衬底（2Q）包括：支撑衬底（10）; 布置在所述支撑基板（10）上的氧化物膜（20）; 布置在氧化物膜（20）上的半导体层（30a）; 以及保护膜（40），其通过覆盖未被所述支撑基板（10）或所述半导体层（30a）覆盖的氧化膜（20）的部分（20s，20t）来保护所述氧化膜（20）。 制造半导体器件的方法包括：制备具有保护膜的复合衬底（2Q）的工艺; 以及利用保护膜在复合衬底（2Q）的半导体层（30a）上外延生长至少一个功能半导体层的工艺，所述功能半导体层产生半导体器件功能。 因此，提供了具有保护膜的复合衬底和使用具有保护膜的复合衬底的半导体器件的制造方法，所述复合衬底具有可以外延生长高质量功能半导体层的大的有效面积。

    6.
    发明专利
    未知

    公开(公告)号：DE69936672T2

    公开(公告)日：2008-04-30

    申请号：DE69936672

    申请日：1999-01-15

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： YAMAMOTO YOSHIYUKI ,  SAITO HIROHISA ,  IMAI TAKAHIRO ,  MEGURO KIICHI

    IPC: H01L23/373 ,  H01L21/48 ,  H01L23/14 ,  H01L23/495

    Abstract: A heatsink comprising: a substrate (26) of a sintered compact including Cu and W, and a thin diamond film layer (31) formed on a surface of said substrate (26), wherein the Cu content in said substrate is at least 5% by weight, and wherein the diffraction peak intensity of the (211) plane of W is at least 30 times the diffraction peak intensity of the (200) plane of Cu in an X-ray diffraction chart obtained by irradiating said thin diamond film (31) layer with an X-ray.

    DIAMOND ELECTRON EMISSION CATHODE, ELECTRON EMISSION SOURCE,ELECTRON MICROSCOPE, AND ELECTRON BEAM EXPOSURE DEVICE
    7.
    发明专利
    DIAMOND ELECTRON EMISSION CATHODE, ELECTRON EMISSION SOURCE,ELECTRON MICROSCOPE, AND ELECTRON BEAM EXPOSURE DEVICE 未知

    公开(公告)号：CA2608851A1

    公开(公告)日：2006-12-21

    申请号：CA2608851

    申请日：2006-06-19

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： UEDA AKIHIKO ,  NISHIBAYASHI YOSHIKI ,  IMAI TAKAHIRO ,  YAMAMOTO YOSHIYUKI

    IPC: H01J1/15 ,  H01J37/06 ,  H01J37/305

    Abstract: An object of the present invention is to provide an electron emission cathode and an electron emission source using diamond and having a high brightness and a small energy width that are suitable for electron ray and electron beam devices and vacuum tubes, in particular, electron microscopes and electron beam exposure devices, and also electronic devices using such cathode and source. The diamond electron emission cathode according to the present invention has single crystal diamond in at least part thereof. The diamond electron emission cathode has a columnar shape having a sharpened acute section and a heating section. One electron emitting portion is provided in the sharpened acute section. The electron emitting portion and heating section comprise a diamond semiconductor. The diamond semiconductor is a p-type semiconductor having p-type impurities at 2 × 10 15 cm -3 or higher. The semiconductor is present in the electron emitting portion. A metal layer is formed on the surface of the electron emission cathode. The metal layer is present in at least part of the heating section. The shortest distance from the electron emitting portion to an end portion of the metal layer is 500 µm or less. An electric current for heating is supplied to the heating section with a pair of current introducing terminals, and some of the introduced electrons can be emitted from the electron emitting portion.

    10.
    发明专利
    未知

    公开(公告)号：DE69622455T2

    公开(公告)日：2002-11-07

    申请号：DE69622455

    申请日：1996-04-04

    Applicant: RIKAGAKU KENKYUSHO ,  SUMITOMO ELECTRIC INDUSTRIES ,  ISHIKAWAJIMA HARIMA HEAVY IND

    Inventor： KITAMURA HIDEO ,  YAMAMOTO YOSHIYUKI ,  TANABE KEIICHIRO ,  SAKAE HISAHARU

    IPC: G01T1/26 ,  G01T1/29

    Abstract: The present invention provides a radiation beam position monitor, comprising a diamond plate, a plurality of electrode pairs, the electrodes of each pair being provided on both sides of the plate and opposing one another; and the plate having a center about which said electrode pairs are placed in symmetrical arrangement being determined by taking into consideration the predetermined symmetry of the cross-sectional spatial profile of the power density of the radiation beam to be monitored. The invention is further related to a method of monitoring the position of a radiation beam.

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