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    HIGH-HARDNESS SINTERED BODY FOR TOOL AND ITS MANUFACTURE
    31.
    发明专利
    HIGH-HARDNESS SINTERED BODY FOR TOOL AND ITS MANUFACTURE 失效

    公开(公告)号：JPS59219445A

    公开(公告)日：1984-12-10

    申请号：JP9309983

    申请日：1983-05-25

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： NAKAI TETSUO ,  YATSU SHIYUUJI ,  ASAI KEIZOU ,  KUMAZAWA YOSHIAKI

    IPC: C22C1/05 ,  C22C26/00 ,  C22C29/00

    Abstract: PURPOSE:To manufacture a high-hardness sintered body for a tool capable of drawing or cutting a hard substance without causing the falling of diamond particles by mixing fine diamond particles with a hard metallic carbide and an Fe group metal as a sintering medium and by sintering the mixture. CONSTITUTION:A powdered mixture consisting of 80-95vol% fine diamond particles of 0.2-2mum size, 0.5-5vol% hard metallic carbide of =1,400 deg.C for >=15 min to manufacture a high hardness sintered body for a superhard tool. The falling of the diamond particles is not caused even when the sintered body is used as the material of a die for drawing a high-hardness wire rod or a tool for cutting high hardness ceramics or plastics.

    SEMICONDUCTOR MOUNTING TOOL AND ITS MANUFACTURE
    32.
    发明专利
    SEMICONDUCTOR MOUNTING TOOL AND ITS MANUFACTURE 失效

    公开(公告)号：JPH11340286A

    公开(公告)日：1999-12-10

    申请号：JP14747198

    申请日：1998-05-28

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： IGUCHI TAKEHISA ,  KUMAZAWA YOSHIAKI ,  SUMIYA HITOSHI

    IPC: H01L21/60 ,  H01L21/603

    Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor mounting tool with excellent wear resistance and a manufacturing method for hardly generating chipping and cracking by adopting the material of hard and dense composition for a tool tip part. SOLUTION: A cubic system boron nitride sintered compact composed of cubic system boron nitride particles whose grain diameter is less than 1 μm is formed as the tool tip part 4 and a bonding surface projected to a width for not exerting thermal influence on an auxiliary film for reinforcing the free end of a lead wire inside a device hole provided on a film carrier is formed at the tool tip part 4.

    PRODUCTION OF SINGLE CRYSTAL DIAMOND AND PRODUCTION APPARATUS THEREFOR
    33.
    发明专利
    PRODUCTION OF SINGLE CRYSTAL DIAMOND AND PRODUCTION APPARATUS THEREFOR 失效

    公开(公告)号：JPH111392A

    公开(公告)日：1999-01-06

    申请号：JP4332598

    申请日：1998-02-25

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： SAITO HIROHISA ,  CHIKUNO TAKASHI ,  IMAI TAKAHIRO ,  KUMAZAWA YOSHIAKI

    IPC: C30B25/00 ,  C30B25/02 ,  C30B25/10 ,  C30B29/04 ,  H01L21/205

    Abstract: PROBLEM TO BE SOLVED: To provide both a method for stably producing a single crystal diamond of large area by either a plasma CVD method or a thermal filament method and a production apparatus therefor. SOLUTION: A flat plate comprising a main surface and side faces composed of planes of low index is used as an initial single crystal diamond substrate 50 and a single crystal diamond is subjected to homoepitaxial vapor-phase growth on the single crystal diamond substrate 50 to form a single crystal diamond of large area. The retaining means for the single crystal diamond substrate 50 is composed of a material hardly forming a compound with carbon or uses a material covered with such the material. The production method and the apparatus therefor can stably grow a single crystal diamond on the surface of a substrate and consequently a high quality single crystal diamond of large area can be formed in a short time.

    SYNTHESIZING METHOD OF DIAMOND
    34.
    发明专利
    SYNTHESIZING METHOD OF DIAMOND 失效

    公开(公告)号：JPH10167888A

    公开(公告)日：1998-06-23

    申请号：JP32400196

    申请日：1996-12-04

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： CHIKUNO TAKASHI ,  IMAI TAKAHIRO ,  YOSHIDA KENTARO ,  KUMAZAWA YOSHIAKI

    IPC: C30B29/04 ,  C23C16/02 ,  C23C16/26 ,  C23C16/27 ,  C23C16/50 ,  C30B25/10 ,  H01J37/32

    Abstract: PROBLEM TO BE SOLVED: To provide a high-quality diamond film having a large area. SOLUTION: In this method, diamond is synthesized on a substrate 11 from a plasma state containing a carbon component. A filament 3 is disposed above the substrate 11 and contains tungsten as a hot electron releasing material. An electrode 4 is disposed apart from the filament 3, and a potential relatively higher than the potential of the substrate 11 is at least temporarily applied on the filament 3, while a potential relatively higher than the potential of the filament 3 is at least temporarily applied on the electrode 4. Thereby, plasma is produced between the filament 3 and the substrate 11 and electrons are made to move from the filament 3 to the electrode 4 to produce plasma between the filament 3 and the electrode 4.

    DIAMOND FILM AND ITS SYNTHESIS
    35.
    发明专利
    DIAMOND FILM AND ITS SYNTHESIS 失效

    公开(公告)号：JPH09309794A

    公开(公告)日：1997-12-02

    申请号：JP12969296

    申请日：1996-05-24

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： CHIKUNO TAKASHI ,  KUMAZAWA YOSHIAKI

    IPC: C30B25/02 ,  C30B25/18 ,  C30B29/04 ,  H01L21/205

    Abstract: PROBLEM TO BE SOLVED: To grow a diamond layer in a 100} face of a large-area substrate through the epitaxial growth by previously roughening the surface of a specific substrate, heteroepitaxially growing a metal layer on the roughened surface, then growing a diamond layer on the metal layer. SOLUTION: On the surface of a substrate 8 which is made of a cubic crystal of semiconductor, metal, carbide or oxide and its normal line is on the face or within 10 deg. from the face , a roughened pattern 8a of 111} or 110}. Then, a metal layer 9 is formed on the roughened pattern 8a through the heteroepitaxial growth. On this metal layer 9, a diamond layer is epitaxially grown (10: the heteroepitaxially grown diamond, 11: twin crystal diamond). The substrate is preferably a semiconductor of an element in group IV or a semiconductor of elements in groups III and V. The material of the metal layer 9 is, for example, Ni, Cu or Co.

    SURFACE GRINDING DEVICE AND ITS METHOD
    37.
    发明专利
    SURFACE GRINDING DEVICE AND ITS METHOD 失效

    公开(公告)号：JPH0938856A

    公开(公告)日：1997-02-10

    申请号：JP19023495

    申请日：1995-07-26

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： SEKI YUICHIRO ,  TANABE KEIICHIRO ,  KUMAZAWA YOSHIAKI

    IPC: B24B37/005 ,  B24B37/00

    Abstract: PROBLEM TO BE SOLVED: To efficiently grind a surface of a work of hard material with high accuracy by applying on the work from above pressurizing force corresponding to the difference between a self-weight of a head and energizing force of energizing means when grinding the ground surface of the work. SOLUTION: When a working pressure is reduced to perform grinding according to a size, shape, material of a work or grinding progress conditions, an output of an air cylinder 40 corresponding to a supply air pressure is applied on a head 20 as upward energizing force by supplying a predetermined air pressure regulated by a regulator valve 44 to the air cylinder 40. In this case, force given by subtracting energizing force equal to the output of an air cylinder 40 from self-weight of each head 20 is applied on each work as a working pressure.

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